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April 2002
FDS4559
60V Complementary PowerTrenchMOSFET
General Description Features
This complementary MOSFET device is produced using Q1: N-Channel
Fairchilds advanced PowerTrench process that has
been especially tailored to minimize the on-state 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V
resistance and yet maintain low gate charge for RDS(on) = 75 m @ VGS = 4.5V
superior switching performance.
Q2: P-Channel
Applications
3.5 A, 60 V RDS(on) = 105 m @ VGS = 10V
DC/DC converter
RDS(on) = 135 m @ VGS = 4.5V
Power management
LCD backlight inverter
Q2
DD2 5 4
DD2
DD1 6 3
D1
D
Q1
7 2
SO-8 G2
S2 G
G1 S 8 1
S1 S
Pin 1 SO-8 S
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W
RJC Thermal Resistance, Junction-to-Case (Note 1) 40 C/W
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
15 1.8
VGS = -10V
DRAIN-SOURCE ON-RESISTANCE
-6.0V -4.5V
VGS = -3.5V
12 -5.0V -4.0V 1.6
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
-3.5V -4.0V
9 1.4
-4.5V
-5.0V
6 1.2
-6.0V
-3.0V -7.0V
-8.0V
-10V
3 1
-2.5V
0 0.8
0 1 2 3 4 5 0 2 4 6 8 10
-VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)
2 0.4
DRAIN-SOURCE ON-RESISTANCE
ID = -3.5A
1.8
RDS(ON), ON-RESISTANCE (OHM)
1.6
RDS(ON), NORMALIZED
0.3
1.4
TA = 125oC
1.2 0.2
0.8 0.1
TA = 25oC
0.6
0.4 0
-50 -25 0 25 50 75 100 125 150 175 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V)
15 100
VDS = -5V TA = -55oC VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
25oC
12 10
-ID, DRAIN CURRENT (A)
125oC TA = 125oC
9 1 25oC
-55oC
6 0.1
3 0.01
0 0.001
1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)
10 1200
ID = -3.0A VDS = 10V
-VGS, GATE-SOURCE VOLTAGE (V)
20V f = 1 MHz
1000 V GS = 0 V
8
30V
CAPACITANCE (pF)
800
6 C ISS
600
4
400
2
200
C RSS C OSS
0 0
0 4 8 12 16 0 10 20 30 40 50 60
Qg, GATE CHARGE (nC) -V DS , DRAIN TO SOURCE VOLTAGE (V)
100 40
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RJA = 135C/W
100s
TA = 25C
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
10 30
10ms
100ms
1 20
1s
10s
VGS = -10V
DC
SINGLE PULSE
0.1 10
RJA = 135oC/W
TA = 25oC
0.01 0
0.1 1 10 100 0.01 0.1 1 10 100 1000
-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
20 1.8
VGS = 10V
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN-SOURCE CURRENT (A)
6.0V 4.5V
16 1.6
RDS(ON), NORMALIZED
5.0V
VGS = 4.0V
4.0V
12 1.4
4.5V
5.0V
8 1.2
6.0V
8.0V
3.5V 10V
4 1
0 0.8
0 1 2 3 4 0 4 8 12 16 20
2.2 0.14
ID = 2.3A
ID = 4.5A
DRAIN-SOURCE ON-RESISTANCE
2 0.12
RDS(ON), ON-RESISTANCE (OHM)
VGS = 10V
1.8
RDS(ON), NORMALIZED
0.1
1.6
TA = 125oC
1.4 0.08
1.2 0.06
1
0.04 TA = 25oC
0.8
0.6 0.02
0.4
0
-50 -25 0 25 50 75 100 125 150 175
2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with Figure 14. On-Resistance Variation with
Temperature. Gate-to-Source Voltage.
20 100
TA = -55oC VGS = 0V
VDS = 5V 25oC
IS, REVERSE DRAIN CURRENT (A)
10
o
16 125 C
ID, DRAIN CURRENT (A)
TA = 125oC
1
12 25oC
0.1
-55oC
8
0.01
4 0.001
0.0001
0
0 0.2 0.4 0.6 0.8 1 1.2
1 2 3 4 5 6
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
10
ID = 4.5A VDS = 10V 900
VGS, GATE-SOURCE VOLTAGE (V)
f = 1MHz
20V 800
8 30V VGS = 0 V
700
CISS
CAPACITANCE (pF)
6 600
500
4 400
300
2 200
COSS
100
CRSS
0 0
0 2 4 6 8 10 12 14 0 10 20 30 40 50 60
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
100 40
SINGLE PULSE
RDS(ON) LIMIT RJA = 135oC/W
TA = 25oC
ID, DRAIN CURRENT (A)
10 100s 30
1m
POWER (W)
10ms
1 100ms 20
1s
VGS= 10V DC
SINGLE PULSE
0.1 RJA= 135oC/W 10
TA= 25oC
0.01 0
0.1 1 10 100 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC)
Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum
Power Dissipation.
TRANSIENT THERMAL RESISTANCE
1
r(t), NORMALIZED EFFECTIVE
D = 0.5
0.2
RJA(t) = r(t) + RJA
RJA = 135C/W
0.1 0.1
0.05
P(pk)
0.02
t1
0.01
0.01 t2
SINGLE PULSE
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. H5