, U na.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

PowerMOS transistor BUZ84

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNTT
field-effect power transistor in a
metal envelope. VDS Drain-source voltage 800 V
This device is Intended for use in ID Drain current (d.c.) 5,3 A
Switched Mode Power Supplies Ptot Total pwer dissipation 125 W
(SMPS), motor control, welding,
RDS(ON) Drain-source on-state resistance 2,0 n
DC/DC and DC/AC converters,
and in general purpose switching
applications.

MECHANICAL DATA

Dimensions in mm
Net mass: 12 g
Pinning:
l=Gate
2 Drain
3 = Source

38,84 30,1 19,5 H.55

| max

10,9-.- 1,6

Fig.l TO3; drain connected to mounting base.

Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs)
to prevent damage to MOS gate oxide.
2. Accessories supplied on request: refer to Mounting instructions for TO3 envelopes.

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Dtain-source voltage - - 800 V
VDGR Drain-gate voltage RGS = 20 kn - 800 v..
VGS Gate-source voltage - - 20 V
ID Drain current (d.c.) T mb - 25 C - 5,3 A
ID Drain current (d.c.) Tmb=100C - 3,4 A
IDM Drain current (pulse peak value) Tmb. 25 "C - 21 A
Plot Total power dissipation Tmb- 25 "C - 125 W
Tstg Storage temperature - -55' 150 C
TJ Junction temperature

150 c

THERMAL RESISTANCES
From junction to mounting base Rthj-mb = 1,0 K/W
From junction to ambient Rthj-a = 35 K/W

STATIC CHARACTERISTICS
TmD = 25 C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown voltage VGS = 0 V; ID = 0,25 mA 800 V
VGSCTO) Gate threshold voltage VDS VGS; ID = 1mA 2,1 3,0 4,0 V
IDSS Zero gate voltage drain current VDS = 800 V; VGS " 0 V; TJ = 25 C 20 250 MA
IDSS Zero gate voltage drain current VDS * 800V; VGS = OV;Tj - 125 C 0,1 1,0 mA
IGSS Gate source leakage current VGS-*20V;VD$ = OV 10 100 nA
RDS(ON) Drain-source on-state resistance V G s=10V;I D = 3A 1,6 2,0 n

DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX UNIT
gfs Forward transconductance VDS = 25 V; ID = 3 A 1,8 3,0 - S
Ciss Input capacitance VGS" 0V; VDS * 25 V;f = 1 MHz 3900 5000 PF
CoSS Output capacitance - 200 350 pF
Crss Feedback capacitance 80 140 pF
'don Turn-on delay time 60 90 ns
VDD = 30V;I D = 2,SA;
tr Turn-on rise time - 90 140 ns
tdoff Turn-off delay time VGS = 10 v; RGS so n; 330 430 ns
Turn-off fall time Rgen 50 110 L40 na
tf
Ld Internal drain inductance Measured from contact screw on 5,0 nH
header closer to source pin and
centre of die
LS Internal source inductance Measured from source lead 6 mm - 12,5 - nH
from package to source bond pad
REVERSE DIODE .RATINGS AND CHARACTERISTICS
Tmb~ 25 C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
!DR Continuous reverse drain current Tmb = 25''C 5,3 A
rDRM Pulsed reverse drain current Tmb = 25C 21 A
VSD Diode forward on-voltage IF =10,6 A; VGS = OV; - 1,0 1,45 V
Tj = 25C
trr Reverse recovery time lF = 5,3A;Tj = 25C 1800 ns
QIC Reverse recovery charge -dlp/dt = 100 A/jis; - 25 - PC
Tj-25"C;
VGS = 0 V; VR = 100 V

140
W
i ->
Po12 \
I 100
ss
80
s\
60

40
\
20 ss
0
) 50 100 C
s150
-TC
Fit'.2 Power dissipation PD = f(Tmb), Ffe.5 Typical output characteristics Ifi m f(Vos)
Parameter: VGS; $ *** pulse test;

10'

5
*
So/

I 10' >
^
5 [ffi H"H4
^ i xy ;s '
a lUS S \ iops
:^T
\
V

'' ^ ^
10 10ms '+'.'.
A
t / . V '

T
5
-0= SJk
DC
4 7- /
1 Illl II V 10
10 5 10' S 102 5V10 3

Fig. 4 Safe operating area Irj(DC) and Fig.S Typical transfer characteristic ID af(VGs)
IDM** f(Vos)
Parameter: tp,- D = 0,01; Tmb = 25 "C.
Conditions: 80 us pulse test; Vrjs=25 V,