Professional Documents
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com SEPTEMBER2017
IN THIS ISSUE:
C.W. SWIFT
C.W. SWIFT& &Associates,
Associates,Inc. Inc.
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C.W. SWIFT & Associates, Inc.
C.W.
15216 SWIFT
Burbank Blvd.,& Associates,
Van Inc.
Nuys, CA 91411
15216 Burbank
Tel: 800-642-7692 Blvd., VanorNuys,
or 818-989-1133 Fax: CA 91411
818-989-4784
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sales@cwswift.com or Fax: 818-989-4784
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Mini-Circuits
20
61.38
Pwr = 22 dBm
61.32
Pwr = 22 dBm
65
22: Feature Article
15 55
Power (dBm). Efficiency (%) Using High Accuracy Models to Achieve First Pass Design
Success - A Transmitter Case Study: Part 2, Power Amplifier
Gain (dB)
10 45
10.77 dB 10.73 dB
Output Power (R, dBm)
Design
Pwr = 22 dBm Pwr = 22 dBm
Efficiency (R)
5 Gain (L) 35
32.99 dBm
Pwr = 22 dBm
32.95 dBm
Pwr = 22 dBm By Ted Longshore and Larry Dunleavy
0 25
1.8 2 2.2 2.4 2.6 2.8
Frequency (GHz)
Utilizing non-linear transistor models enables the concurrent
optimization of gain, power, efficiency, and modulation linearity over
the desired operational bandwidth and temperature in cascaded
transistor amplifiers. The expense of the required non-linear models
is discussed on the basis of cost savings, shortened development
schedule, and improved designer productivity.
This two-part article presents a case study in simulation-based
RF/Microwave design, using as an example a transmitter design.
Part 1 focused on a harmonic filter design using advanced linear
component models. Part 2 illustrates how the use of accurate, non-
linear power transistor models can facilitate successful design flows
40
32.45 dBm 32.83 dBm for transmitter power amplifier designs. A two stage telemetry
30
32.11 32.25 amplifier was successfully designed in a single pass using NI AWR
Output Power (dBm)
20
Design Environment software Microwave Office circuit simulation,
10
Simulated Output vs.8 dBm Input Power (dBm) Microwave Global Models as included in the Modelithics CLR
Library, and a non-linear transistor model, as included in the
Measured Output vs.8 dBm Input Power
0
-10
1800000000 2000000000 2200000000 2400000000 2600000000 2800000000
Modelithics-Qorvo GaN Library.
Frequency (Hz)
16: F
eatured Products 42: P
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8 High Frequency Electronics
Not actual chassis
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In the News
The same situational awareness regarding the ever-chang-
Hurricane Harvey Relief ing composition of RF signals in any given space should
also support a wireless communications management
HFEs friends at National Instruments, Austin, paradigm known as spectrum sharing. Thats a paradigm
Tex., have suggested that donations for Hurricane of shared spectrum use rather than the current practice of
Harvey relief be directed to the American Red exclusiveallocations governed by license agreements for
Cross (redcross.org). Easy ways to donate include: specific frequencies. Tilghman is hoping to develop tech-
Donate $10 to Red Cross relief efforts by tex- nologies to understand the current state of the spectrum
ting HARVEY to 90999. The tax-deductible for improved and extensive spectrum sharingwhich can
$10 donation will appear on your next phone greatly expand the wireless communications capacity of
bill. the electromagnetic spectrumboth in the RFMLS pro-
Donate to the Salvation Army online or by gram as well as in another major DARPA effort known as
texting STORM to 51555. theSpectrum Collaboration Challenge.
Donate the United Way of Greater Houston
flood relief fund, which will help with immedi- AIs first and ongoing wave consists of expert systems that
ate and long-term recovery, through its web- rigidly codify human expertise and decision-making in pre-
site or by texting UWFLOOD to 41444. dictable, rule-driven domains, such as simple game play-
ing, tax preparation, and industrial process control. Such
*** expert systems also have been deployed in RF contexts
where, for example, engineers have been able to specify
The Radio Frequency Spectrum + Machine in computer code the rigid rules used by radios to switch
Learning = A New Wave in Radio to unused frequencies when they encounter interference.
Technology While effective, these systems have little understanding
The current wave of artificial intelligence, driven by of whats actually happening in the spectrum. RF applica-
machine learning (ML) techniques, is all the rage, and for tions of the second and emerging machine-learning wave
good reason. With sufficient training on digitized writing, of AI should yield far more agile and versatile capabilities:
spoken words, images, video streams, and other digital an RFML system, with a sufficiently rich training set of RF
content, ML has become the basis of voice recognition, self- data, should be able to identify an enormous range of both
driving cars, and other previously only-imagined capabili- known and previously unseen RF waveforms.
ties. As billions of phones, appliances, drones, traffic lights,
security systems, environmental sensors, and other radio- The RFMLS program features four technical components
connected devices sum into a rapidly growing Internet of that would integrate into future RFML systems:
Things (IoT), there now is a need to apply ML to the invis-
ible realm of radio frequency (RF) signals, according to pro- Feature Learning:From data sets of RF signals, RFML
gram manager Paul Tilghman of DARPAs Microsystems systems will need to learn the characteristics used to
Technology Office. To further that cause, DARPA today identify and characterize signals in various civilian and
announced its new Radio Frequency Machine Learning military settings.
Systems (RFMLS) program.
Attention and Saliency:Just as people can quickly
What I am imagining is the ability of an RF Machine direct their attention for a needed goalfinding ice cream
Learning system to see and understand the compo- in a huge supermarket, for exampleamidst the morass
sition of the radio frequency spectrum the kinds of of sensory input coming in at every moment, an RFML
signals occupying it, differentiating those that are system will need to include algorithms for directing its
important from the background, and identifying artificial attention to what is potentially important in
those that dont follow the rules, said Tilghman. He the RF spectrum it is operating in. Researchers who win
would want that same system to be able to discern contracts to work on the RFMLS program will need to
subtle but inevitable differences in the RF signals devise an equivalent within the RF domain of our own
from what otherwise are identical, mass-manufac- so-called salience detection, that is, the ability to identify
tured IoT devices and to distinguish these from sig- and recognize important visual and auditory stimuli. The
nals intended to spoof or hack into these devices. presence of a communications signal in a frequency band
We want to be able to understand and trust what is usually devoted to radar signals would be an example of
happening in the Internet of Things and to stand up a signal-of-interest that an RFMLSs salience-detection
an RF forensics capability to identify unique and capability would have to notice.
peculiar signals amongst the proverbial cocktail
party of signals out there, said Tilghman. Autonomous RF Sensor Configuration:Our eyes
automatically adjust to changing light levels and they
12 High Frequency Electronics
Planar Monolithics Industries, Inc.
Miniature DLVA, ERDLVA & SDLVAs
PMI offers a variety of DLVAs, ERDLVAs and SDLVAs over the DC to
40 GHz frequency range with high dynamic range, along with excellent
temperature stability. Most SDLVAs provide a limited IF output or CW
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that are available at http://www.pmi-rf.com/Products/dlva/features.htm
Amplifiers Solid State
Model: ERDLVA-218-CW-LPD: Model: PLVA-500M18G-50:
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180 & Directional) (Hermetically sealed) DC Voltage: +12 V @ 75 mA
DC Voltage: +10.8 V @ 153 mA -12 V @ 75 mA
Detectors RF/Microwave -10.8 V @ 53 mA Connectors: SMA Female
DLVAs, ERDLVAs Connectors: SMA Female
& SDLVAs
DTOs, VCOs, PLO, DROs, Specification ERDLVA-218-CW-LPD PLVA-500M18G-50
& Frequency Synthesizers Frequency Range 2.0 to 18.0 GHz 0.5 to 18.0 GHz
Filters & Switched Flatness 2.0 dB Max. - Measured 1.42 dB 1.0 dB Max. - Measured 0.6 dB
Filter Banks VSWR 2.0:1 Max. - Measured 1.82:1 3.0:1 Max. - Measured 2.8:1
Form, Fit, Functional TSS -64 dBm Min. - Measured -65 dBm -42 dBm Min. - Measured -43 dBm
Products & Services Logging Range -60 to +4 dBm -40 dBm to +0 dBm
Frequency Discriminators 77 mV/dB (5 mV)
Log Slope 50 mV/dB - Measured 50.1 mV/dB
& IFMs Measured 74.19mV/dB @ 10 GHz
Integrated MIC/MMIC 0.5 dB Max. (+25 C),
1.5 dB (-20 C to +85 C) Max.
Log Linearity 1.0 dB Average (-54 C to +85C)
Assemblies (IMAs) Measured 0.75 dB
- Measured 0.8 @ -54 C to +85
IQ Vector Modulators Video Output Range -0.5 V (-60 dBm) < RF IN < 5.5V (4 dBm) 0 to 2.5 V (50 Ohms minimum load)
Limiters RF/Microwave
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Log Amplifiers http://www.pmi-rf.com/Products/dlva/ http://www.pmi-rf.com/Products/SDLVA/SDLVA-
Millimeter Wave DLVA-18G40G-42-50-CD-1.htm 2020-70OPT.0518A03A07-50OHM.htm
Components
(Up to 50 GHz)
Package Size: 1.9 x 1.7 0.4 Package Size: 3.0 x 3.5 x 0.5
Miscellaneous Products DC Voltage: +15 VDC @ 20 mA DC Voltage: +15 V @ 450 mA
-15 VDC @ 10 mA -15 VDC @ 100 mA
Multifunction Integrated Connectors: 2.92mm Female Connectors: SMA Female
Assemblies (MIAs)
Phase Shifters & Bi-Phase
Modulators SDLVA-2020-70 OPT.0518,A03,
Specification DLVA-18G40G-42-50-CD-1
A07-50OHM
Power Dividers/Combiners 18.0 to 40.0 GHz (Operational)
(Passive & Active) Frequency Range
30.0 to 31.0 GHz (Full Performance)
0.5 to 18 GHz
Pulse Modulators (SPST) 0.25 dB @ -23 dBm 2.0 dB Typ (0.5 to 18 GHz)
Flatness
Measured 0.1 dB Measured 1.20 dB
Rack & Chassis Mount
Products 3.0:1 (0.5 to 18.0 GHz @ -20 dBm)
VSWR 1.5:1 Max - Measured 1.18:1
Measured 1.60:1
Receiver Front Ends -65 dBm Min (8 to 18 GHz)
& Transceivers TSS -34 dBm @ 25 C - Measured -39.8 dBm
Measured -68.5 dBm
SDLVAs, ERDLVAs Logging Range -32 to +10 dBm
-65 dBm to +5 dBm
& DLVAs Measured >-65 to +5 dBm
20 mV/dB (10% Tolerance)
Single Side Band Log Slope 50 + 3 mV/dB - Measured 51.83 mV/dB
Measured 20.3 mV/dB
Modulators Log Linearity 0.5 dB - Measured +0.4 / -0.35 dB 1.75 dB Max (-65 dBm to +5 dBm)
SMT & QFN Products
Nurnberg Convention Center, Antenna Measurement Techniques Association
Switch Matrices Nuremberg, Germany Grand Hyatt Atlanta Hotel, Atlanta, GA
October 8th - 13th, 2017 October 15 20, 2017
Switched Filter Banks Booth #220 Booth# TBD
www.eumweek.com http://www.amta2017.org
Switches Solid State
Systems - Radar Sense & West Coast Operation: East Coast Operation:
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Threshold Detectors
USB Products
sales@pmi-rf.com www.pmi-rf.com
ISO9001-2008 REGISTERED
X - BAND HP LIMITERS
In the News
move and focus to keep the most Mini-Circuits and X-Microwave
8-12 GHz, 100 Watt CW, important aspects of a dynamic are pleased to announce their
1 KW Peak visual scene in the most sensitive collaboration to offer a wide selec-
portions of the retina. The RFML tion of Mini-Circuits components
systems that DARPA envisions in X-MWblock drop-in format.
would have an equivalent ability to X-Microwave, an innovative leader
automatically tune their receptivity committed to optimizing the RF/
to signals and signal features the microwave design process, has devel-
systems deem to be most effective at oped X-MWsystem, the industrys
accomplishing the task at hand. first truly modular, solderless evalu-
ation system with a growing port-
Waveform Synthesis:A full RFML folio of physically compatible drop-
system also should be able to digital- in building blocks for prototyping
ly synthesize virtually any possible microwave assemblies. Mini-Circuits
waveform, much as human beings is proud to extend availability of its
can pronounce any new word or products through the X-Microwave
. High power protection W CW add inflections or pauses to infuse component ecosystem as part of a
and KW peak (( microsec pulse
width)
gravitas or nuances of meaning into commitment to providing best-in-
. Very low leakage level (+++ dBm typ.) what they saying. This capability to class technical resources for custom-
. Low insertion loss and VSWR.
. Ideal for Radar Application
create new waveforms tailored to ers designing Mini-Circuits parts into
. Fast recovery time, Microsec Typ. the specific RF devices they emanate their systems.
. Built-In DC Block @ input and
from should give other sophisticated
output. * * *
. Hermetically sealed module radios the improved ability to iden-
. Removable connectors for surface tify friendly systems. Aethercomm
mount installation.
announced the
Typical Performance @ + 25 Deg. C DARPA appointment of
darpa.mil Dan Goodwin as
Vice President
***
of Business
High Frequency Development.
Note: . Insertion Loss and VSWR Electronics has Dan is a retired
tested at --- dBm.
Note: . Limiting threshold level, ++ dBm
announced the United States Marine who flew F/A-
typ @input power which makes appointment of 18 Hornets in combat and command-
insertion loss dB higher
than that @--- dBm. Stuart Dale as ed a Marine Corps Fighter-Attack
Note: . Power rating derated to the publications squadron while on active duty. He
%@ Deg. C.
Note . Typ. leakage @ W CW sales representa- is also one of the few pilots in the
++ dBm, @@@ W CW +++ dBm,
@ W CW +++ dBm.
tive for the New U.S. military to fly as an exchange
England states. Stuart brings pilot where he served with the U.S.
Other Products: Detectors,
Amplifiers, Switches, Comb decades of tech-focused advertising, Air Force flying F-15C Eagles. He
Generators, Impulse Generators, publishing, PR, and sales experi- has served at the highest levels of
Multipliers,
Integrated Subassemblies ence to the position. He began his the Department of Defense, working
ad-agency career working on the at US Marine Corps Headquarters
Please call for Detailed Brochures account for Sanders Associates (now at the Pentagon. With his decades of
BAE Systems Electronics) and is operational experience using high-
very familiar with RF, microwave, technology military radar, communi-
The Microwave Products Source . .
and defense-electronics technology cations, and EW systems, he brings
and issues. a user perspective to Aethercomms
Made in U.S.A ISO -----
Certified business development and market-
Stuart can be reached at stuart@ ing efforts. Dan is a graduate of the
highfrequencyelectronics.com or 508- United States Naval Academy with
155 Baytech Drive, San Jose, CA 95134 655-6902. a degree in Systems Engineering
Tel: (408) 941-8399 . Fax: (408) 941-8388
Email: Info@herotek.com and holds an MBA from Norwich
* * *
Website: www.herotek.com
Visa/Mastercard Accepted
University, Vermont.
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Mini-Circuits
Abstract
Utilizing non-linear transistor models enables the concurrent optimization of gain, power,
efficiency, and modulation linearity over the desired operational bandwidth and temperature
in cascaded transistor amplifiers. The expense of the required non-linear
This two-part article models is discussed on the basis of cost savings, shortened development
presents a case study schedule, and improved designer productivity.
in simulation-based
RF/Microwave design Introduction
This two-part article presents a case study in simulation-based RF/
Microwave design, using as an example a transmitter design. Part 1
focused on a harmonic filter design using advanced linear component
models1. Part 2 illustrates how the use of accurate, non-linear power transistor models can
facilitate successful design flows for transmitter power amplifier designs. A two stage telem-
etry amplifier was successfully designed in a single pass using NI AWR Design Environment
software Microwave Office circuit simulation, Microwave Global Models as included in the
Modelithics CLR Library, and a non-linear transistor model, as included in the Modelithics-
Qorvo GaN Library2.
Non-linear models, load-pull power device data, and/or X-parameter-based3 models for
active devices, are provided by many device manufacturers, but not all devices have suitably
accurate models or data available for first pass design success. There is also a cost required
to develop accurate models, whether the needed model is provided by the manufacturer, devel-
oped in-house by the design group, or developed by a third-party model provider4,5. In addition
to the technical aspects of the amplifier design example, this treatment includes a cost/ben-
efit analysis of the required models provided through an example Return on Investment
(ROI) calculation6. While the transistor model used in this example is available for free to the
designer, our ROI analysis discusses the ROI scenario assuming a custom non-linear model
needed to be contracted.
PA Design Approaches
Designing a power amplifier requires trading off gain vs. power, efficiency vs. linearity, and
return loss vs. bandwidth7,8. Matching a non-linear amplifier to load-pull derived source (Zs)
and load (Zl) target impedances is straightforward for designing a narrow band, single stage
$
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Protected under U.S. Patent 7,348,854
* Price Includes Heatsink
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com 416 rev AM
Models
The Largest Selection
of Waveguide
Components For
Same-Day Shipping TGF2965-SM Bandpass TGF2965-SM Harmonic
Driver Stage Filter Final Stage Filter
Figure 1 Transmitter Amplifier Block Diagram.
amplifier at a single bias point, but significantly more difficult when opti-
mizing a multistage broadband amplifier.
Waveguide Bandpass Waveguide
Filters Detectors Assuming a non-linear device model is available for the transistor(s) of
interest, RF and microwave computer-aided-engineering (CAE) tools such
as Keysights ADS or NI AWR Design Environment can accurately simu-
late non-linear circuits, facilitating the design of the input and output
matching circuits to optimize gain, output power, efficiency, modulation
linearity, and even harmonic levels across the entire frequency band.
Waveguide Power Waveguide
Amplifiers Sections Unfortunately, few manufacturers supply non-linear models for all of their
devices, leaving the engineer to decide whether to develop his own non-
linear model, or rely on the Zs and Zl provided in the device datasheet and
then build and optimize the prototype on the bench. When using the load-
pull Zs/Zl approach, the design and development of a new transmitter
typically involves building a prototype and two or more revisions of the
Waveguide Standard Waveguide
Gain Horns Terminations complete PCB, with a total development period that may be as long as 12
months. In-house development of a non-linear model requires specialized
equipment, expertise and time. Another alternative is to contract a custom
non-linear transistor model to be developed by a third party model pro-
vider.
Waveguide Variable
Attenuators
Waveguide to Coax
Adapters
Amplifier Example
The requirements for the medium power telemetry transmitter exam-
ple to be examined here include a frequency range of 2200 to 2400 MHz,
minimum output power of 1 W at 85C, and maximum current draw of 300
mA at 12 V. Adding the insertion loss of the harmonic filter1 and desired
design margin, yields a final stage output power design goal of 32 dBm at
Flexible Waveguide Up/Down 25C. Because the shaped offset QPSK (SOQPSK) modulation for this
Waveguide Converters
application is constant amplitude, the amplifier is operated in a com-
pressed mode. The allowable size for the complete transmitter is 2.8 in2,
with 0.5 in2 allocated to the driver and final stage RF circuitry.
The Qorvo TGF2965-SM, which is an input matched 32 V GaN transis-
tor rated at 6.0 W was chosen for this application. The small size and inte-
Frequencies from L-band to W-band grated input match on this device are important to meeting the stringent
Leading Edge Performance size requirements of this transmitter, and the surface mount package
Sizes from WR-10 to WR-430 facilitates manufacturing. This transistor provides margin if the output
power requirements increase in the future. For even higher power future
High Precision Machining
applications, the 10 W TGF3015-SM can be substituted for the TGF2965-
Multiple Flange Styles SM, thereby leveraging this design effort for additional product offerings.
All In-Stock and Ready to Ship Accurate non-linear models for both of these transistors are included along
with about 55 other models in the Modelithics-Qorvo-GaN Library2.
Because of its small size, high gain, and low current consumption, the
TGF2965-SM was also chosen for the driver stage on this transmitter. This
is overkill for this 1 W application, but works well for it when operated at
a lower supply voltage. It is also appropriate for a higher power 6 W version
Get info at www.HFeLink.com described below when operated at the recommended supply voltage. This
Applications
Engineers
Available
24/7
Support
Armed with the worlds largest selection of in-stock, ready to ship RF components, and the brains to back
them up, Pasternack Applications Engineers stand ready to troubleshoot your technical issues and think
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looking for a hard to find part or simply need it by tomorrow, our Applications Engineers are at your
service. Call or visit us at pasternack.com to learn more.
866.727.8376
www.pasternack.com
Models
20 65
61.38 61.32
Pwr = 22 dBm Pwr = 22 dBm
15 55
10 45
10.77 dB 10.73 dB
Output Power (R, dBm) Pwr = 22 dBm Pwr = 22 dBm
Efficiency (R)
5 Gain (L) 35
Figure 3 Final Stage Gain, Output Power, Efficiency at Vdd = 12 V, Pin +16 to +22 dBm.
design also incorporates a bandpass filter to reduce the final stage input and output match was optimized for
transmit noise level at GPS L1 and L2 bands (Figure 1). performance across the 2200 2400 MHz operating
bandwidth using the AWR DE Harmonic Balance
Zs/Zl Data-Based Final Stage Design Effort HBTUNER tool (Figure 2). To allow for higher power
The first effort is to determine the optimal input and
output match which produces the desired gain, output 4
0.
power, and efficiency across the operating frequency.
Typically, without non-linear models, this is completed
using a load-pull setup, or manufacturer published Zs
and Zl load impedance. Then a proto board is built to
replicate that optimal match, with the component val-
ues and the PCB layout tweaked for best performance.
This is a time-consuming and iterative effort, and it is
difficult to know whether the resulting design is opti- 2.301 GHz
mal, especially for broadband cascaded amplifier appli- r 35.7892 Ohm
cations. It should be mentioned in the absence of a non- x 2.42421 Ohm
linear model or load-pull data, knowledgeable designers
0.2
0.4
0.6
0.8
1.0
2.0
MCURVE
drain voltage of 12 V. Optimizing gain, output power, and
ID=TL3
efficiency at this substantially lower Vdd is only possible
ID=TL8
V=12 V
ID=V4
MLIN
DCVS
due to the accurate non-linear transistor models, which
ideally would also be validated across the range of
ID=C157
C=27 pF
intended operating voltage for best confidence. This was
not done for the effort described below in which a 32 V MDLX
MVIA1P
ID=TL33
ID=TL11
ID=V8
optimized model actually worked quite well at 12 V.
2
MLIN
MLIN
This flexibility of model applicability points to a
ID=TL4
strong advantage of properly developed non-linear mod-
MLIN
Ang1=-160 Deg
els over data-based models or design approaches. While
1
ID=TL12
Fo=2.3 GHz
efficient design flows may be possible based on load-pull
Mag1=0.2
HBTUNER
MTEE
ID=TU1
Zs/Zl data, data is needed at all of the specific frequen-
ID=C158
C=27 pF
cies and bias conditions desired. Whereas a non-linear
2
model, validated at a subset of desired conditions, can
ID=C147
C=27 pF
MDLX
MVIA1P
ID=V6
ID=TL30
2
often be extrapolated with good accuracy to produce
MLIN
Figure 2 Final Stage Schematic with HBTUNER in Place of Actual Load Matching Circuit.
1 MDLX
simulations at any desired frequency and bias condition,
ID=TL35
within the range of validity of the model.
MLIN
Figure 3 shows nearly +33 dBm output power at 61 %
1
efficiency and compressed gain of 11 dB at an input ID=TL36
ID=TL5
MLIN
L_Discrete=15 nH
MTEE
3
power of +22 dBm. The plot also shows the decrease in 2
ID=TL43
ID=L33
ID=TL10
NET="HMT_QOR_TGF2965_SM_001"
the input power is reduced in 2 dB steps to 16 dBm. No
MLIN
MTEE
1
MDLX
2
ID=TL17
3
monic frequencies for even higher efficiency.
1
3Temperature=40 DegC
2
1
Figure 4 shows the optimized load impedance at this
self_heat_factor=1
output power. This will be used as a design goal when the
HBTUNER tool is replaced by actual output circuitry.
ID=TL7
MLIN
SUBCKT
Minimizing the overlap between non-zero current and
ID=S1
Source
Drain
non-zero voltage is the key to optimizing transistor effi-
ciency through waveform engineering. The non-linear
1
R_Discrete=10 Ohm
transistor model utilized in this simulation provides an
L_Discrete=15 nH
Gate
M
inspection node that enables visualization of the simu-
2
lated voltage and currents at the intrinsic ports of the
ID=R168
ID=L37
ID=TL2
ID=TL6
MLIN
MDLX MDLX
2
1
Figure 5 shows that the drain voltage for the final stage
ID=TL16
MLIN
MCROSS
ID=TL29
MDLX
ID=TL13
MVIA1P
2
MTEE
2
3
MDLX
ID=TL14
MVIA1P
ID=TL9
MLIN
ID=V9
1
2
MTEE
V=2.3 V
PStep=2 dB
PORT_PS1
DCVS
2
27
Models
TGF2965-SM I V
35 350
30 300
Voltage (L, V)
Current (R, mA)
25 250
Drain Voltage (V)
15 150
10 100
5 50
0 0
0 0.3 0.6 0.87
Time (ns)
Figure 5 Transistor Die Simulated Drain Voltage and Current at Intrinsic Reference Plane.
Design of Cascaded Amplifier output match, bandpass filter, and final stage input
After the final stage matching is complete, the driver together using the computer simulation (Figure 7), with-
stage and an interstage surface mount bandpass filter, out building and tuning a hardware prototype. Note, the
are introduced. If transistor models are not available, 5 ohm resistors provide placeholders on the PCB for
this can be accomplished by matching input and output gain adjustment, if necessary.
impedances to 50 ohms at the center frequency, and then As shown in Figure 8, the simulated gain, output
cascading them together. However, the impedances of power, and efficiency are flat across the frequency band
the matched driver and final stage circuits are close to as the input power is increased in 2 dB steps from 0 to
50 ohms only at that center frequency. Given that most +8 dBm at a drain voltage of +12 V. The levels outside of
designs operate over a 10 % or larger frequency band- the passband are reduced by the bandpass filter. At a
width, a significant variation in gain, linearity, efficien- drive level of +8 dBm, the gain of the cascaded stages is
cy, and output power can be expected after cascading over 3 dB compressed at 24.4 dB, the output power is
devices together due to the variation in source and load 32.5 dBm, and the multi-stage efficiency is 47.8 %,
impedances presented by the devices to each another. thereby meeting the design goals.
Since non-linear transistor models are available for Recall that this design has a maximum current
the chosen transistor, it is straightforward to simultane- requirement of 300 mA at 12 V, at 32 dBm output power.
ously optimize the cascaded non-50 ohm driver stage The simulated current draw at +6 dBm input power,
PORT_PS1
P=1 MLIN
Z=50 Ohm ID=TL4
PStart=0 dBm
PStop=8 dBm MLIN PORT
ID=R75 P=2
PStep=2 dB MDLX R=5 Ohm ID=TL2 1
MTEE ID=R76
1 2 ID=TL1 MDLX R=5 Ohm Z=50 Ohm
BP 1 2
3
ID=S2 SUBCKT 2 ID=S4
NET="TGF2965_SM_Driver" ID=S7 NET="TGF2965_SM_Final"
NET="BFCN_2275"
Figure 7 Amplifier Top Level Schematic, Including Bandpass Filter in Interstage Network.
Item 1.5 W PA 6 W PA
29
Models
30 2.2 GHz
60
2.4 GHz
24.45 dB 24.82 dB
25 Pwr = 8 dBm Pwr = 8 dBm 55
20 50
10 40
2.2 GHz 2.4 GHz
5 32.51 dBm 32.87 dBm 35
Pwr = 8 dBm Pwr = 8 dBm
0 2.4 GHz
30
2.2 GHz Output Power (R, dBm)
31.87 dBm 32.04 dBm
-5 Efficiency (R) Pwr = 6 dBm 25
Pwr = 6 dBm
Gain (L)
-10 20
1.8 2 2.2 2.4 2.6 2.8
Frequency (GHz)
Figure 8 Amplifier Gain 1.5 W, Output Power, and Efficiency after Optimization for 12V Operation.
Figure 12 shows a compressed output power of +38 support the higher output power level. This is an excel-
dBm at a nominal cascaded amplifier gain of 28 dB, and lent way to leverage the design effort into two distinct
efficiency of 48 % for the 6W, 32V design version. Note high efficiency amplifier products.
the 2.5 dB increase in gain due to the higher drain volt- As shown in Figure 12, the design engineer can opti-
age, which reduces the need for additional gain stages to mize the circuit performance for a particular application
0.3
2.4 GHz
2.2 GHz 0.2556 A
0.25 0.2417 A Pwr = 8 dBm
Pwr = 8 dBm
2.4 GHz
2.2 GHz 0.2271 A
0.2 0.2191 A Pwr = 6 dBm
Pwr = 6 dBm
Current (mA)
0.15
Driver Current (A)
Final Current (A)
2.2 GHz 2.4 GHz
0.1 0.06438 A 0.06517 A
Pwr = 8 dBm Pwr = 8 dBm
Mini-Circuits
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STOCKROOM
Models
40
-10
-20
-30
-40
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Figure 10 Simulated Amplifier Harmonics Before Adding Harmonic Rejection Filter.
given simulation capability and component models that frequency band or power level to meet customer require-
accurately predict the operating performance. From this ments.
point, it is easy to redesign the amplifier for a different Although not required for this application, the degra-
dation of the modulated transmit signal Error Vector
40
2.3 GHz
30 31.57 dBm
Freq = 2.3 GHz
Pwr = 6 dBm
20
10
Power (dBm)
-10
4.6 GHz
-34.03 dBm 9.2 GHz
Freq = 2.3 GHz -34.45 dBm
-20 Pwr = 6 dBm Freq = 2.3 GHz
Pwr = 6 dBm
-30
-40
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Figure 11 Simulated Amplifier Harmonics After Adding Harmonic Rejection Filter.
35
Models
35 60
15 40
10 2.4 GHz 35
2.2 GHz 38.16 dBm
38.1 dBm Pwr = 10 dBm
5 Pwr = 10 dBm
Output Power (R, dBm) 30
Efficiency (R)
0 25
Gain (L)
-5 20
1.8 2 2.2 2.4 2.6 2.8
Frequency (GHz)
Figure 12 Amplifier Gain 6 W, Output Power, and Efficiency after Optimization for 32V Operation.
(and thus higher output power) describe above. The data However, for the purposes of illustration, we have
below does not include the harmonic filter losses. assumed an investment cost of $25K for the needed
models. Actual development cost of a non-linear model
Example Return on Investment Analysis depends on many factors, including fixturing require-
An estimate of the design cost and schedule impact ments, complexity and quantity of measurements need-
with and without adequate models is presented in Table ed for extraction and validation, and range of operating
110. Based on designer experience, it is estimated that it conditions and desired simulation requirements of the
would take two additional iterations to complete the PA final model.
design without adequate transistor and passive compo-
nent models. Table 2 shows a summary of the estimated
cost, schedule, and productivity improvement of using
accurate models for this design example. As mentioned
in this case, the device manufacturer has sponsored free
access to the needed non-linear model for this design.
Figure 13 Complete Amplifier Layout with Harmonic Filter (left) and Fabricated Board with pigtails
(right).
36 High Frequency Electronics
HIGH-PERFORMANCE, QUALITY
AMPLIFIERS WITHOUT THE WAIT!
MULTI-OCTAVE
LOW-NOISE MODELS 100 MHz to 40 GHz
18 GHz at 1 Watt
MEDIUM-POWER
MODELS
1 GHz to 40 GHz
TABLETOP INSTRUMENT
LOW-NOISE MODELS
L3T.COM
AEROSPACE SYSTEMS
ELECTRONIC SYSTEMS
COMMUNICATION SYSTEMS
SENSOR SYSTEMS
Narda-MITEQ
Models
30
25
20
15
10
Gain (dB)
5
0 Simulated Gain @ +8 dBm Input
-5 Measured Gain at +8 dBm Input
Simulated Gain at -10 dBm Input
-10
Measured Gain at -10 dBm Input
-15
-20
1.8 2 2.2 2.4 2.6 2.8
Frequency (GHz)
Figure 14 Simulated and Measured Power Gain -10, + 8 dBm Input Power.
From Table 3 one can conclude, on the basis of strict- was achieved in the presented design example. Of
ly cost, the design cost savings would nearly be justified course, if the same models could be used for even one
on the basis of a single design using the models. more such design, the model investment cost would also
Certainly the remaining $2.5K cost difference would be be fully returned with a significant engineering produc-
justified quite easily on the basis of the schedule tivity improvement as well.
improvement from 28 weeks without accurate models, to While not specifically addressed here in quantitative
11 weeks with models, due to the first pass success that fashion, an analogous ROI analysis could be performed
40
32.45 dBm 32.83 dBm
30
32.11 32.25
Output Power (dBm)
20
10
Simulated Output vs.8 dBm Input Power (dBm)
Measured Output vs.8 dBm Input Power
0
-10
1800000000 2000000000 2200000000 2400000000 2600000000 2800000000
Frequency (Hz)
Figure 15 Simulated vs. Measured Output Power +8 dBm Input Power.
Table 2 Example Cost and Schedule Estimates for PA Design Completion Without/With Sufficiently
Accurate Models.
39
Models
can substantially reduce the development schedule and Information about the Modelithics CLR Library and
cost for new amplifier programs. In the presented two Modelithics-Qorvo GaN Library models used in this
stage, 1 watt PA example, a first pass design success was work can be found at www.modelithics.com or by email
realized with excellent measured to simulated agree- at info@modelithics.com.
ment and rapid cycle time. With this approach, an exist-
ing design can be easily optimized to meet other cus- About the Authors
tomer requirements with minimal development cost and Dr. Larry Dunleavy co-founded
risk. Modelithics, Inc. in 2001 to provide
improved modeling solutions and high
Closing quality microwave measurement ser-
Quasonix, Inc. (www.quasonix.com) produces telem- vices for radio and microwave frequen-
etry transmitters ranging in size from the nanoPuckTM cy circuit designers.
described in this article, to higher power multi-band, He is currently serving as President
multi-mode models at power levels up to 25 W, as well as and CEO at Modelithics. He also main-
telemetry receivers and precision drive antenna sys- tains a position as a Professor within University of
tems. South Floridas Department of Electrical Engineering,
Table 3 ROI Results Summary Showing Estimated Cost Savings/Schedule Impact of Designing Example
PA with Accurate Models.
References
1
T. Longshore and L. Dunleavy,
Using High Accuracy Models to
Achieve First Pass Success- A
Transmitter Case Study: Part 1
Harmonic Filter Design, High
Frequency Design, August 2017.
2L
. Dunleavy, H. Morales, C. Suckling
and K. Tran, Device and PA Circuit Power Freq. Range Insertion Isolation Amplitude Model
Division (GHz) Loss (dB) (dB) Balance Number
Level Validation of a High Power
GaN Model Library, Microwave 2 1.0-27.0 2.5 15 0.5 dB PS2-51
2 0.5-18.0 1.7 16 0.6 dB PS2-20
Journal, Aug. 2016. See also https:// 5-40 GHz 1-5 GHz
2 1.0-40.0 2.8 13 10 0.6 dB PS2-55
www.modelithics.com/mvp/qorvo .
2 2.0-40.0 2.5 13 0.6 dB PS2-54
3X
-parameters is a trademark of 2 15.0-40.0 1.2 13 0.8 dB PS2-53
2 8.0-60.0 2.0 10 1.0 dB PS2-56
Keysight Technologies. 2 10.0-70.0 2.0 10 1.0 dB PS2-57
3 2.0-20.0 1.8 16 0.5 dB PS3-51
4M
ike Golio and Jim Cozzie, Who
4 1.0-27.0 4.5 15 0.8 dB PS4-51
Pays for Characterization?: The 4 5.0-27.0 1.8 16 0.5 dB PS4-50
Final Dilemma for MESFET 4 0.5-18.0 4.0 16 0.8 dB PS4-17
Modeling, 48th ARFTG Conference 4 2.0-18.0 1.8 17 0.5 dB PS4-19
4 15.0-40.0 2.0 12 0.8 dB PS4-52
Digest, Fall 1996.
8 0.5-6.0 2.0 20 0.4 dB PS8-12
5L
. Dunleavy, Modeling-The Hot 8 0.5-18.0 7.0 16 1.2 dB PS8-16
8 2.0-18.0 2.2 15 0.6 dB PS8-13
Potato In the RF & Microwave
Industry, Microwave Product 10 to 30 watts power handling, visit website for complete specications.
SMA and Type N connectors available to 18 GHz.
Digest, April 2002.
6L
. Dunleavy, Everyone wants bet-
ter models, but wheres the ROI?,
High Frequency Design Magazine,
March 2017.
7S
. Cripps, RF Power Amplifiers for
Wireless Communications, Artech
House, 1999.
Get info at www.HFeLink.com
41
Product Focus
PXIe-8394 allows high-throughput either the single-port PXIe-8398 or dual-port PXIe-8399
communication with peripheral devices remote control module to offer up to 13.7 GB/s of sus-
like RAID data storage arrays tained data throughput. Engineers can use the second
port on the PXIe-8399 to daisy chain additional chassis,
NI announced the release of a new family of high- making it possible to directly interface multiple PXI
performance PXI remote control and bus extension mod- Express chassis to a single host computer, whether it is
ules with PCI Express Gen 3 connectivity. PCI Express a desktop or rack-mount PC.
Gen 3 technology delivers increased bandwidth that is The PXIe-8394 bus extension module supports peer-
critical for data intensive applications like 5G cellular to-peer streaming up to 6.8 GB/s between chassis-sepa-
research, RF record and playback, and high-channel- rated instruments with PCI Express Gen 3 connectivity
count data acquisition. such as the second-generation vector signal transceiver.
As technologies converge into smarter devices under In addition to multichassis systems, the PXIe-8394
test, you increasingly need to build smarter test and allows high-throughput communication with peripheral
measurement systems that leverage the latest process- devices like RAID data storage arrays or the ATCA-3671
ing and data movement capabilities in order to lower the FPGA Module for ATCA. These peripherals typically
cost of test or improve coverage, said Luke Schreier, operate with substantial data sets and can benefit from
director of automated test marketing at NI. This new utilizing the latest PCI Express interfaces.
family of remote control modules augments our existing
National Instruments
portfolio of PCI Express Gen 3 chassis and embedded ni.com
controllers and more than doubles the throughput for
multichassis systems.
2 SPDT
1 SPDT
3 SPDT
8 SPDT
SWITCH STATUS
NEW!
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0.25 dB Insertion Loss Extra-Long Switch Life User-Friendly GUI and DLLs Included
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1.2 VSWR Switch Cycle Counting Feature Small size fits in your Laptop Case!
up to 10W Power Handling with Automatic Calibration Alerts Available from Stock
Visit minicircuits.com for detailed model specs, application notes, and more!
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* Switches protected by US patents 5,272,458; 6,650,210; 6,414,577; 7,843,289; and additional patents pending.
See data sheet for a full list of compatible software.
Mini-Circuits
SATCOM, UAVs and while at 10 GHz the phase noise is -125 dBc/Hz at 10 kHz
offset, both industry leaders.
Drones and a variety of Switching speed is specified at 50 uSec for a full band
step.
Military and The standard model is specified to operate over the 0
to +65 C temperature range, but extended temperature
Commercial Test versions covering -40 to +85C are available on special
order.
applications. This series of frequency synthesizers have been
Availability: from stock designed in a miniature package. Dimensions are 4 x 3.6
x .94 tall. Units come with a 14 pin Molex connector for
starting October 2017. all input voltages and signals as well as a standard USB
mini-b connector. RF connectors are SMA-Female.
Applications include Wideband Receivers, Automated
Test Systems, Telecom, SATCOM, UAVs and Drones and
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Availability: from stock starting October 2017.
Micro Lambda Wireless
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46 High Frequency Electronics
Product Highlights
Synthesizers
Full-featured QuickSyn microwave synthesizer delivers instrument-grade
performance, increased functionality, and efficient power consumption in a com-
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47
Product Highlights
Connectors
Molex and Radiall have signed a licensing agreement on the Q-MTitan solution
and are jointly working on its range extension. The recent demand for higher data
rates in Military, Aerospace and Industrial industries has generated higher counts
of optical links, making solutions with MT ferrules more and more attractive.
Initially developed for the telecom market and data centers, MT ferrule based solu-
tions significantly reduce the cost of ownership while bringing unmatched density.
With the Q-MTitan solution the MT benefits are integrated in a more robust con-
tact design suitable for use in harsh environmental and mechanical conditions as
Enclosures
Equipto Electronics is now offer-
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100
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80
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38
Equiptos Ka-Shield enclosures will
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48 High Frequency Electronics
Our Most Important Connection is with You.
RF COAXIAL RF CABLE
CONNECTORS ASSEMBLIES
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60 years.
AS9120
ISO 9001:2000
Phone: (888) 591-4455 or (772) 286-4455 Fax:(772) 286-4496 CERTIFIED
E-Mail: admin@microwavecomponentsinc.com
Web Site: www.microwavecomponentsinc.com
Product Highlights
Power Divider
Model SWP-62386304-12-S1 is an E band, 4-way power divider with a
typical insertion loss of 1.0 dB across the frequency range of 62 to 86 GHz.
The divider offers 20 dB isolation and well balanced ports, which can be used
for in-phase power dividing or combining. This power divider comes as a right
angle configuration with WR-12 waveguides and UG-387/U flanges at the
input and all outputs.
SAGE Millimeter
sagemillimeter.com
Circuit Board (Dk & Df) Anisotropy Testers 20 mil Thick Laminate
4.4
Measure 4.2
Anisotropy Dk 4.0
3.8
X, Y & Z 3.6
Circuit Boards 0 5X 10Y 15 Z 20
Laminates 0.020
0.018
Plastic
Df
0.016
Ceramics 0.014
2 - 10 GHz 0.012
0 5 10 15 20
www.damaskosinc.com Frequency (GHz)
www.highfrequencyelectronics.com
Product Highlights
amcomusa.com
301-353-8400
The RF Power House
Wideband Power
Amplifiers (And More!)
Low VSWR
Low Insertion Loss
Low RF Leakage
Board-to-Board Connectors
SuperMini Board-to-Board solutions optimize interconnect performance
See us at
for board-to-board stacking applications. These RF/millimeter wave blind-
EDI CON USA Booth #223
mate connectors maximize electrical performance of the transmission path
between connector and circuit while accommodating axial misalignment of EuMW Booth #202
.010 and radial misalignment of +/- 10 via Southwest Microwaves intelli-
gent bullet and PCB receptacle designs.
Available bullets enable board-to-board spacing as close as 3 mm, assur-
ing transmission line dependability for tightly stacked PCBs. Low mating
insertion force allows for an increased density of interconnections per board.
Unique bullet design enables extended mating and de-mating cycles.
Designed to optimize match to circuit for surface and thru-hole PCB
mounting applications, SuperMini Board-to-Board connectors are available
in smooth bore or detent style Vertical and End Launch jack configurations
for stripline, microstrip and grounded co-planar circuit launch transitions. southwestmicrowave.com/interconnect
Additionally, smooth bore and detent style 4-hole flange SuperMini Board-to-
Board jack to 2.92 mm (K) jack adapters are available.
Get info at www.HFeLink.com
Southwest Microwave
southwestmicrowave.com
53
Product Focus
Thin-Film Hybrids
Ciao Wireless Inc., founded in February, 2003, is dedi- Exceptional Value without sacrificing Quality and
cated to serving the RF & Microwave Community in the Reliability.
design and manufacture of RF & Microwave Thin-Film
Ciao Wireless
Hybrid Amplifiers, Radial Power Combiners-Dividers and ciaowireless.com
Space Qualified Amplifier Assemblies. Ciao is committed
in providing the Highest Performance designs at an
55
Product Highlights
Directional Coupler
KRYTAR announced a new Directional Coupler operating in the frequency
range of 0.5 to 20.0 GHz offering Nominal Coupling of 6 dB in a compact package.
KRYTARs new directional coupler is uniquely designed for systems applica-
tions where external leveling, precise monitoring, signal mixing or swept trans-
mission and reflection measurements are required. The coupler provides simple
solutions for many applications including electronic warfare (EW), commercial
wireless, SATCOM, radar, signal monitoring and measurement, antenna beam
forming, and EMC testing environments. For many space-restricted applica-
tions the compact size makes KRYTAR directional couplers ideal.
KRYTAR
krytar.com
Coupler
KRYTAR, Inc., a leader in the
design and production of ultra-
broadband microwave components
and test equipment announces a
new Directional Coupler specifical-
ly designed for thermal vacuum
environmental applications operat-
ing over the frequency range of 2.0
to 8.6 GHz.
KRYTARs new directional cou-
pler is uniquely designed for ther-
mal vacuum environmental applica-
tions where external leveling, pre-
cise monitoring, signal mixing or
swept transmission and reflection
measurements are required. These
unique couplers undergo additional
reliability and quality assurance
inspections during all phases of
assembly and electrical evaluation.
KRYTARs successful space-applica-
tion heritage offers distinct quali-
ties including: innovative products;
quick-reaction capability; design
responsiveness; flexibility; fast pro-
duction turn-around; and close part-
nerships with customers.
KRYTAR
Get info at www.HFeLink.com krytar.com
56 High Frequency Electronics
Product Highlights
Mult-Function Modules
Microwave Solutions Inc. offers the microwave system within a single package. Examples include an attenuator-
designer the option of specifying multiple signal control amplifier-coupler-detector module, a coupler-sampler
functions within a single, standard size drop-in module. module with multiple sample ports, and a coupler-cou-
Originally designed for radar and microwave test instru- pler-detector module for both coupling and power level
ments, these Multi-Function Modules (MFM) can provide detection.
gain control, amplification, coupler and/or detection for an
Microwave Solutions
integrated automatic level control (ALC) function all microwavesolutions.com
57
Product Highlights
Phase Shifter
PMI Model No. PS-360-DC-3
OPTION 618-15D is an 8-bit,
Digitally Controlled Phase Shifter
that provides range of 360 in 256
Steps over the 6.0 to 18.0 GHz fre-
quency range. This unit has a typi-
cal insertion loss of 10 dB, accuracy
of 15 Max (Peak to Peak) -
Measured 6.6, PM/AM of 2.5 dB
Max - Measured 1.2 dB and a
VSWR of 2.0:1 Max. It is supplied
with removable SMA (F) connec-
tors in a housing measuring 1.6 x
1.75 x 0.5.
Planar Monolithics Industries
pmi-rf.com
MOSFET Driver
Analog Devices announces the LTC7004, a high The LTC7004 is designed to receive a ground-refer-
speed, high side N-channel MOSFET driver that oper- enced, low voltage digital input signal and quickly drive
ates up to a 60V supply voltage. Its internal charge pump a high side N-channel power MOSFET whose drain can
fully enhances an external N-channel MOSFET switch, be between 0V and 60V (65V abs max). The LTC7004
enabling it to remain on indefinitely. The LTC7004s pow- operates from a 3.5V to 15V driver bias supply range
erful 1 gate driver can easily drive large gate capaci- with an adjustable undervoltage lockout. The fast 13ns
tance MOSFETs with very short transition times and rise and fall times, when driving a 1,000pF load, mini-
35ns propagation delays, well suited for both high fre- mize switching losses. Other features include an adjust-
quency switching and static switch applications. able turn-on slew rate and an adjustable overvoltage
lockout.
Analog Devices
analog.com
Keysight Technologies
Tim Burkhard
keysight.com tpburk@aol.com 707-544-9977
59
Product Focus
This new family of low-PIM cables encompasses 36
1.25:1 up to 2 GHz and connector and length variants. The timing of this prod-
uct release is perfect because another generation of wire-
1.35:1 up to 6 GHz. less systems is rolling out and our customers are going
to need more low-PIM interconnects, said Dan Birch,
Product Manager.
Pasternacks new low-PIM, plenum-rated SPP-250-
Pasternack launched a new line of low-PIM, plenum- LLPL cable assemblies are in stock and ready for immedi-
rated SPP-250-LLPL cable assemblies for use in wireless ate shipment with no minimum order quantity. For
infrastructure. Typical applications include distributed detailed information on these products, please visit
antenna systems (DAS), indoor wireless systems, multi- https://www.pasternack.com/pages/RF-Microwave-and-
carrier communication systems and PIM testing. Millimeter-Wave-Products/low-pim-plenum-rated-spp-
Pasternacks 36 new low-PIM jumper cables are made 250-llpl-cable-assemblies.html.
with UL910 plenum-rated SPP-250-LLPL cable and fea-
Pasternack
ture a maximum PIM level of -155 dBc. PIM levels have pasternack.com
been fully tested with PIM test results marked on each
Mini-Circuits
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NETHE WIDEST BANDWIDTH IN THE INDUSTRY
IN A SINGLE MODEL!
EP2K1+ 2 to 26.5 GHz
EP2W1+ 0.5 to 9.5 GHz
EP2C+ 1.8 to 12.5 GHz
RoHS Compliant
o S
Product availability is listed on our website.
COMPLIANT
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com 448 rev T
Advertiser Index
Company Page
Advanced Switch Technology............................................................... 51
Akoustis................................................................................................. 35 PUBLISHER
AMCOM................................................................................................. 52
API Technologies..................................................................................... 1
Scott Spencer
Besser Associates.................................................................................. 46 Tel:603-759-1840
Coilcraft................................................................................................. 11 scott@highfrequencyelectronics.com
C. W. Swift & Associates.......................................................................C2
Damaskos.............................................................................................. 51 ADVERTISING SALESNEW ENGLAND
dBm.......................................................................................................... 7
Delta Electronics................................................................................... 19
Stuart Dale
Fairview Microwave.............................................................................. 17 508-655-6902
Equipto Electronics............................................................................... 48 stuart@highfrequencyelectronics.com
Herotek.................................................................................................. 14
IW Microwave....................................................................................... 15 ADVERTISING SALES EAST
JFW Industries.....................................................................................C4
KRYTAR................................................................................................ 56 Gary Rhodes
L-3 Narda-MITEQ................................................................................ 37 Vice President, Sales
Luff Research........................................................................................ 50
Tel:631-274-9530
MECA Electronics................................................................................. 55
Micro Lambda Wireless.......................................................................... 9 grhodes@highfrequencyelectronics.com
Microwave Components........................................................................ 49
Mini-Circuits....................................................................................... 2, 3 ADVERTISING SALES CENTRAL
Mini-Circuits......................................................................................... 21 Keith Neighbour
Mini-Circuits......................................................................................... 23
Tel:773-275-4020
Mini-Circuits......................................................................................... 31
Mini-Circuits......................................................................................... 43 keith@highfrequencyelectronics.com
Mini-Circuits................................................................................... 62, 63
National Instruments............................................................................. 5 ADVERTISING SALES WEST
National Instruments........................................................................... 47 Tim Burkhard
Pasternack............................................................................................. 24
Associate Publisher
Pasternack............................................................................................. 25
Planar Monolithics Industries............................................................. 13 Tel: 707-544-9977
Pulsar Microwave................................................................................. 20 tim@highfrequencyelectronics.com
Pulsar Microwave................................................................................. 41
RF Bay................................................................................................... 51 ADVERTISING SALESSOUTHWEST
SAGE Millimeter............................................................................ 32, 33
Jeff Victor
Satellink................................................................................................ 51
Sector Microwave.................................................................................. 50 Tel: 224-436-8044
SGMC Microwave.................................................................................C3 jeff@highfrequencyelectronics.com
Southwest Microwave........................................................................... 53
Times Microwave.................................................................................. 45 ADVERTISING SALES NEW
VidaRF................................................................................................... 58
Wenteq Microwave................................................................................ 51
ACCOUNTS & PRODUCT SHOWCASE
The ad index is provided as an additional service by the publisher, Joanne Frangides
who assumes no responsibility for errors or omissions.
Tel:201-666-6698
n Find Our Advertisers Web Sites using HFeLink joanne@highfrequencyelectronics.com
1. G
o to our company information Web site:
www.HFeLink.com, or
U.K. AND EUROPE
2. F
rom www.highfrequencyelectronics.com, click on the HFeLink
reminder on the home page Sam Baird
3. C
ompanies in our current issue are listed, or you can choose one of
Tel:+44 1883 715 697
our recent issues
4. F
ind the company you want ... and just click! sam@highfrequencyelectronics.com
5. Or ... view our Online Edition and simply click on any ad!
High Frequency Electronics (USPS 024-316) is published monthly by Summit Technical Media, LLC, 3 Hawk Dr., Bedford, NH 03110.
Vol. 16 No.9 September 2017. Periodicals Postage Paid at Manchester, NH and at additional mailing offices.
POSTMASTER: Send address corrections to High Frequency Electronics, PO Box 10621, Bedford, NH 03110-0621.
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