PD - 9.

1346B

IRLZ44N
HEXFET Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = 55V
l 175C Operating Temperature
l Fast Switching RDS(on) = 0.022
G
l Fully Avalanche Rated
ID = 47A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V 47
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 33 A
IDM Pulsed Drain Current 160
PD @TC = 25C Power Dissipation 110 W
Linear Derating Factor 0.71 W/C
VGS Gate-to-Source Voltage 16 V
EAS Single Pulse Avalanche Energy 210 mJ
IAR Avalanche Current 25 A
EAR Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 175
T STG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)

Thermal Resistance
Parameter Min. Typ. Max. Units
RJC Junction-to-Case 1.4
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62

8/25/97
IRLZ44N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ.
Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55
V VGS = 0V, I D = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.070
V/C Reference to 25C, I D = 1mA

0.022 VGS = 10V, ID = 25A
RDS(on) Static Drain-to-Source On-Resistance
0.025 VGS = 5.0V, I D = 25A

0.035 VGS = 4.0V, I D = 21A
VGS(th) Gate Threshold Voltage 1.0
2.0 V VDS = VGS , ID = 250A
gfs Forward Transconductance 21
S VDS = 25V, I D = 25A
25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current A

250 VDS = 44V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage
100 V GS = 16V
IGSS nA
Gate-to-Source Reverse Leakage
-100 VGS = -16V
Qg Total Gate Charge 48 ID = 25A
Qgs Gate-to-Source Charge
8.6 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 25 V GS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time 11 VDD = 28V
tr Rise Time 84 I D = 25A
ns
td(off) Turn-Off Delay Time 26 RG = 3.4, VGS = 5.0V
tf Fall Time 15 RD = 1.1, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 7.5
and center of die contact S

Ciss Input Capacitance 1700 VGS = 0V

Coss Output Capacitance 400 pF VDS = 25V
Crss Reverse Transfer Capacitance 150 = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
47
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
160
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 25A, VGS = 0V

t rr Reverse Recovery Time 80 120 ns TJ = 25C, IF = 25A
Q rr Reverse RecoveryCharge 210 320 nC di/dt = 100A/s
t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25C, L = 470H
RG = 25, IAS = 25A. (See Figure 12)
I SD 25A, di/dt 270A/s, VDD V(BR)DSS ,
TJ 175C
Pulse width 300s; duty cycle 2%.
 IRLZ44N

1000 1000
VGS VGS
TOP 15V TOP 15V
12V 12V
10V 10V
8.0V 8.0V
ID , D ra in -to -S o u rce C u rre n t (A )

ID , D ra in -to -S o u rce C u rre n t (A )

6.0V 6.0V
4.0V 4.0V
3.0V 3.0V
BOTTOM 2.5V BOTT OM 2.5V
100 100

10 10
2 .5V

2.5 V

2 0 s PU L SE W ID TH 20 s PU LSE W ID TH
T J = 2 5C T J = 1 75C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
V D S , Drain-to-S ource Voltage (V ) V D S , Drain-to-Source V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
I D = 4 1A
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
I D , D r ain- to-S ourc e C urre nt (A )

2.5

T J = 2 5 C
100 2.0
(N o rm a li ze d )

TJ = 1 7 5 C
1.5

10 1.0

0.5

V DS = 2 5 V
2 0 s P U L S E W ID T H V G S = 10 V
1 0.0 A
A
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T em perature (C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRLZ44N

2800 15
V GS = 0V, f = 1 MH z I D = 25A
C iss = C gs + C gd , C ds SH O R TED V D S = 44 V

V G S , G a te -to -S o u rce V o lta g e (V )

2400 C rss = C gd V D S = 28 V
C oss = C ds + C gd 12
C is s
C , C a p a cita n ce (p F )

2000

9
1600

C o ss
1200
6

800

C rss 3
400
FO R TEST CIR CU IT
SEE FIG UR E 13
0 A 0 A
1 10 100 0 10 20 30 40 50 60 70
V D S , Drain-to-Source V oltage (V) Q G , T otal Gate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I S D , R e v e rse D ra in C u rre n t (A )

I D , D ra in C u rre n t (A )

100 10s

100
100 s

TJ = 17 5C
10
1m s
T J = 25 C

T C = 25 C 10m s
T J = 17 5C
VG S = 0 V S ing le Pulse
10 A 1 A
0.4 0.8 1.2 1.6 2.0 2.4 1 10 100
V S D , S ource-to-Drain Voltage (V ) V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRLZ44N

50 RD
VDS

VGS
40 D.U.T.
RG
I D , Drain Current (A)

+
- VDD
30
5.0V
Pulse Width 1 s
Duty Factor 0.1 %
20

Fig 10a. Switching Time Test Circuit

10
VDS
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( C)

10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature

Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

1
D = 0.50

0.20

0.10
P DM
0.1 0.05
t1
0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRLZ44N

500
L ID

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
VDS TO P 10 A
1 7A
D.U.T.
400 B OTTO M 25 A
RG +
V
- DD
300
5.0 V IAS
tp
0.01

200
Fig 12a. Unclamped Inductive Test Circuit

100

V(BR)DSS VD D = 2 5V
0 A
25 50 75 100 125 150 175
tp
Starting T J , Junction Temperature (C)
VDD

Fig 12c. Maximum Avalanche Energy

VDS Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

12V .2F
QG .3F

5.0 V +
V
QGS QGD D.U.T. - DS

VGS
VG
3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRLZ44N

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-

RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS
IRLZ44N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
1 0 . 5 4 (. 4 1 5 ) 3 . 7 8 (. 1 4 9 ) -B -
1 0 . 2 9 (. 4 0 5 ) 3 . 5 4 (. 1 3 9 ) 4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-A - 1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
4
1 . 1 5 ( .0 4 5 ) L E A D A S S IG N M E N T S
M IN 1 - G A TE
1 2 3 2 - D R AIN
3 - SO URCE
4 - D R AIN
4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )

0 . 9 3 ( .0 3 7 ) 0 . 5 5 (. 0 2 2 )
3 X 0 . 6 9 ( .0 2 7 ) 3X
1 .4 0 (. 0 5 5 ) 0 . 4 6 (. 0 1 8 )
3X
1 .1 5 (. 0 4 5 ) 0 .3 6 (. 0 1 4 ) M B A M 2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 -A B .
2 C O N T R O L L I N G D IM E N S IO N : I N C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

Part Marking Information

TO-220AB
E X AM PL E : T H IS I S A N IR F1 010
W IT H A S S E MB LY A
L OT CO D E 9 B1M I NT E RN A TIO N AL P AR T NU M BE R
R E C TIF IE R IRF 10 10
LOG O 9246
9B 1 M D A TE C OD E
A SS E MB LY
(Y YW W )
LOT C OD E Y Y = YE A R
W W = W EE K

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/