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SQD25N06-22L

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Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 C MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
VDS (V) 60
Definition
RDS(on) () at VGS = 10 V 0.022
TrenchFET Power MOSFET
RDS(on) () at VGS = 4.5 V 0.033
Package with Low Thermal Resistance
ID (A) 25
100 % Rg and UIS Tested
Configuration Single
AEC-Q101 Qualifiedd
D Compliant to RoHS Directive 2002/95/EC
TO-252

Drain Connected to Tab


S
G D S

Top View N-Channel MOSFET

ORDERING INFORMATION
Package TO-252
Lead (Pb)-free and Halogen-free SQD25N06-22L-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)


PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS 20
TC = 25 Ca 25
Continuous Drain Current ID
TC = 125 C 20
Continuous Source Current (Diode Conduction)a IS 25 A
Pulsed Drain Currentb IDM 100
Single Pulse Avalanche Current IAS 24
L = 0.1 mH
Single Pulse Avalanche Energy EAS 28 mJ
TC = 25 C 62
Maximum Power Dissipationb PD W
TC = 125 C 20
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 C

THERMAL RESISTANCE RATINGS


PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mountc RthJA 50
C/W
Junction-to-Case (Drain) RthJC 2.4
Notes
a. Package limited.
b. Pulse test; pulse width 300 s, duty cycle 2 %.
c. When mounted on 1" square PCB (Fr-4 material).
d. Parametric verification ongoing.

S11-2046-Rev. C, 24-Oct-11 1 Document Number: 65360

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD25N06-22L
www.vishay.com
Vishay Siliconix

SPECIFICATIONS (TC = 25 C, unless otherwise noted)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 A 60 - -
V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1.5 2.0 2.5
Gate-Source Leakage IGSS VDS = 0 V, VGS = 20 V - - 100 nA
VGS = 0 V VDS = 60 V - - 1.0
Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V, TJ = 125 C - - 50 A
VGS = 0 V VDS = 60 V, TJ = 175 C - - 250
On-State Drain Currenta ID(on) VGS = 10 V VDS5 V 25 - - A
VGS = 10 V ID = 20 A - 0.018 0.022
VGS = 10 V ID = 20 A, TJ = 125 C - - 0.039
Drain-Source On-State Resistancea RDS(on)
VGS = 10 V ID = 20 A, TJ = 175 C - - 0.049
VGS = 4.5 V ID = 20 A, TJ = 25 C - 0.027 0.033
Forward Transconductancea gfs VDS = 15 V, ID = 12 A - 32 - S
Dynamicb
Input Capacitance Ciss - 1580 1975
Output Capacitance Coss VGS = 0 V VDS = 25 V, f = 1 MHz - 305 382 pF
Reverse Transfer Capacitance Crss - 130 163
Total Gate Chargec Qg - 33 50
Gate-Source Chargec Qgs VGS = 10 V VDS = 30 V, ID = 25 A - 5.3 - nC
Gate-Drain Chargec Qgd - 6.8 -
Gate Resistance Rg f = 1 MHz 1.1 2.2 3.3
Turn-On Delay Timec td(on) - 8 12
Rise Timec tr VDD = 30 V, RL = 1.2 - 10 15
ns
Turn-Off Delay Timec td(off) ID 25 A, VGEN = 10 V, Rg = 1 - 24 36
Fall Timec tf - 6 9
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta ISM - - 100 A
Forward Voltage VSD IF = 25 A, VGS = 0 V - 0.9 1.5 V
Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S11-2046-Rev. C, 24-Oct-11 2 Document Number: 65360

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD25N06-22L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted)

30 30

VGS = 10 V thru 5 V
24 24
ID - Drain Current (A)

ID - Drain Current (A)


18 18

VGS = 4 V TC = 125 C
12 12

25 C
6 6

VGS = 3 V - 55 C
0 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS - Drain-to Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

50 0.10
TC = - 55 C

40 0.08
gfs - Transconductance (S)

RDS(on) - On-Resistance ()
25 C

30 0.06

125 C
20 0.04
VGS = 4.5 V

10 0.02
VGS = 10 V

0 0
0 6 12 18 24 30 0 6 12 18 24 30
ID - Drain Current (A) ID - Drain Current (A)
Transconductance On-Resistance vs. Drain Current

2.5 80

ID = 12 A ID = 10 mA
VDS - Drain-to-Source Voltage (V)

2.1 76
RDS(on) - On-Resistance

VGS = 10 V
(Normalized)

1.7 72

VGS = 4.5 V
1.3 68

0.9 64

0.5 60
- 50 - 25 0 25 50 75 100 125 150 175 - 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (C) TJ - Junction Temperature (C)

On-Resistance vs. Junction Temperature Drain Source Breakdown vs. Junction Temperature

S11-2046-Rev. C, 24-Oct-11 3 Document Number: 65360

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD25N06-22L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted)
100 0.25

TJ = 150 C
10 0.20

RDS(on) - On-Resistance
IS - Source Current (A)

1 TJ = 25 C 0.15

0.1 0.10

0.01 0.05 TJ = 150 C

TJ = 25 C
0.001 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

3000 10

ID = 25 A
2500 VGS - Gate-to-Source Voltage (V)
8
C - Capacitance (pF)

2000 VDS = 30 V
Ciss 6

1500

4
1000
Coss
2
500

Crss
0 0
0 10 20 30 40 50 60 0 5 10 15 20 25 30 35

V DS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)


Capacitance Gate Charge

0.6

0.3
VGS(th) - Variance (V)

- 0.3 ID = 5 mA

- 0.6

ID = 250 A
- 0.9

- 1.2
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (C)
Threshold Voltage

S11-2046-Rev. C, 24-Oct-11 4 Document Number: 65360

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD25N06-22L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 C, unless otherwise noted)

IDM Limited
100

Limited by RDS(on)* 100 s

ID - Drain Current (A)


10
ID Limited
1 ms
10 ms
1 100 ms
1 s, 10 s, DC

0.1
TC = 25 C
Single Pulse BVDSS Limited

0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

1
Normalized Effective Transient

Duty Cycle = 0.5


Thermal Impedance

0.2

0.1 0.1

0.05

0.02
Single Pulse

0.01
10-4 10-3 10-2 10-1 1 10 100 1000
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

S11-2046-Rev. C, 24-Oct-11 5 Document Number: 65360

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD25N06-22L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 C, unless otherwise noted)

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05
0.02
Single Pulse

0.01
10 -4 10 -3 10 -2 10 -1 1 10 100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 C)
are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65360.

S11-2046-Rev. C, 24-Oct-11 6 Document Number: 65360

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix

TO-252AA CASE OUTLINE

E A MILLIMETERS INCHES
C1
b2
DIM. MIN. MAX. MIN. MAX.
A 2.21 2.38 0.087 0.094
L2

A1 0.89 1.14 0.035 0.045


A2 0.030 0.127 0.001 0.005
b 0.71 0.88 0.028 0.035
D

b1 0.76 1.14 0.030 0.045

H
b2 5.23 5.44 0.206 0.214
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
L1
L3

L D 5.97 6.22 0.235 0.245


gage plane height (0.5 mm)

D1 4.10 4.45 0.161 0.175


E 6.48 6.73 0.255 0.265
b b1 C E1 4.49 5.50 0.177 0.217
e
A2 e 2.28 BSC 0.090 BSC
e1
A1 e1 4.57 BSC 0.180 BSC
H 9.65 10.41 0.380 0.410
L 1.40 1.78 0.055 0.070
L1 0.64 1.02 0.025 0.040
D1

L2 0.89 1.27 0.035 0.050


L3 1.15 1.52 0.040 0.060
ECN: T11-0110-Rev. L, 18-Apr-11
E1 DWG: 5347
Note
Dimension L3 is for reference only.

Document Number: 71197 www.vishay.com


18-Apr-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224
(5.690)

(6.180)
0.243
(10.668)
0.420

(2.202)
0.087
(2.286)
0.090

0.180 0.055
(4.572) (1.397)

Recommended Minimum Pads


Dimensions in Inches/(mm)

Return to Index Return to Index

APPLICATION NOTE

Document Number: 72594 www.vishay.com


Revision: 21-Jan-08 3
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Revision: 12-Mar-12 1 Document Number: 91000

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