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Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 C MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
VDS (V) 60
Definition
RDS(on) () at VGS = 10 V 0.022
TrenchFET Power MOSFET
RDS(on) () at VGS = 4.5 V 0.033
Package with Low Thermal Resistance
ID (A) 25
100 % Rg and UIS Tested
Configuration Single
AEC-Q101 Qualifiedd
D Compliant to RoHS Directive 2002/95/EC
TO-252
ORDERING INFORMATION
Package TO-252
Lead (Pb)-free and Halogen-free SQD25N06-22L-GE3
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD25N06-22L
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Vishay Siliconix
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD25N06-22L
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted)
30 30
VGS = 10 V thru 5 V
24 24
ID - Drain Current (A)
VGS = 4 V TC = 125 C
12 12
25 C
6 6
VGS = 3 V - 55 C
0 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS - Drain-to Source Voltage (V) VGS - Gate-to-Source Voltage (V)
50 0.10
TC = - 55 C
40 0.08
gfs - Transconductance (S)
RDS(on) - On-Resistance ()
25 C
30 0.06
125 C
20 0.04
VGS = 4.5 V
10 0.02
VGS = 10 V
0 0
0 6 12 18 24 30 0 6 12 18 24 30
ID - Drain Current (A) ID - Drain Current (A)
Transconductance On-Resistance vs. Drain Current
2.5 80
ID = 12 A ID = 10 mA
VDS - Drain-to-Source Voltage (V)
2.1 76
RDS(on) - On-Resistance
VGS = 10 V
(Normalized)
1.7 72
VGS = 4.5 V
1.3 68
0.9 64
0.5 60
- 50 - 25 0 25 50 75 100 125 150 175 - 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (C) TJ - Junction Temperature (C)
On-Resistance vs. Junction Temperature Drain Source Breakdown vs. Junction Temperature
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SQD25N06-22L
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TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted)
100 0.25
TJ = 150 C
10 0.20
RDS(on) - On-Resistance
IS - Source Current (A)
1 TJ = 25 C 0.15
0.1 0.10
TJ = 25 C
0.001 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
3000 10
ID = 25 A
2500 VGS - Gate-to-Source Voltage (V)
8
C - Capacitance (pF)
2000 VDS = 30 V
Ciss 6
1500
4
1000
Coss
2
500
Crss
0 0
0 10 20 30 40 50 60 0 5 10 15 20 25 30 35
0.6
0.3
VGS(th) - Variance (V)
- 0.3 ID = 5 mA
- 0.6
ID = 250 A
- 0.9
- 1.2
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (C)
Threshold Voltage
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SQD25N06-22L
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Vishay Siliconix
THERMAL RATINGS (TA = 25 C, unless otherwise noted)
IDM Limited
100
0.1
TC = 25 C
Single Pulse BVDSS Limited
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
1
Normalized Effective Transient
0.2
0.1 0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10 100 1000
Square Wave Pulse Duration (s)
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SQD25N06-22L
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Vishay Siliconix
THERMAL RATINGS (TA = 25 C, unless otherwise noted)
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 C)
are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65360.
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Package Information
Vishay Siliconix
E A MILLIMETERS INCHES
C1
b2
DIM. MIN. MAX. MIN. MAX.
A 2.21 2.38 0.087 0.094
L2
H
b2 5.23 5.44 0.206 0.214
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
L1
L3
0.224
(5.690)
(6.180)
0.243
(10.668)
0.420
(2.202)
0.087
(2.286)
0.090
0.180 0.055
(4.572) (1.397)
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