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Development of a photovoltaic array model for use in

power-electronics simulation studies

JAGow
C.D.Manning

1 Introduction
Abstract: To be able to develop a complete solar
photovoltaic power electronic conversion system Photovoltaic systems research seems largely to be
in simulation, it is necessary to define a circuit divided into two, fairly distinct areas; namely array
based simulation model for a PV cell in order to physics, design and optimisation, and solar power con
allow the interaction between a proposed version systems. This paper is not concerned with the
converter (with its associated control design of the arrays but rather with development of a
arrangement) and the PV array to be studied. To model of an array that is useful for power electronics
do this it is necessary to approach the modelling applications. Better, more efficient converter systems
process from the perspective of power electronics; may be dcveloped by matching the control and drive
that is to define the desired overall model in requirements of the converter system to the characteris
terms of the manner in which the electrical tics of the array. Alternative energy specialists often
behaviour of the cell changes with respect to the appear not to have sut1icient expertise in power elec
environmental parameters of temperature and tronics to be ahle to develop advanced converter sys
irradiance. The authors cover the development of tems, which can match the input characteristic of the
a general model which can be implemented on power electronic system to those of the array, in order
simulation platforms such as PSPICE or SABER to make best use of the array. Examples of such non
and is designed to be of use to power electronics optimal systems can be found in the field of solar
specialists. The model accepts irradiance and array/battery combinations for stand-alone use [2--4]
temperature as variable parameters and outputs and in the area of utility interactive systems [5-8, 3].
the I/V characteristic for that particular cell for A number of powerful component-based electronics
the above conditions. simulation systems, such as SPICE and SABER, have
become available over recent years, and such systems
are often used during the development of power-elec
tronics systems. In their basic form they do not provide
List of symbols a circuit model, or a component model, of the solar
array itself, and thus are dit1icult to integrate with cur
V solar cell terminal voltage rent electronics simulation technology used in the
I solar cell terminal current generic modelling of PV power electronic systems at a

Iph photogenerated current (linear with irradiance) circuit level.

1 \1
This paper presents a circuit-based simulation model
saturation current due to diffusion mechanism
of a PV array that can be implemented in any circuit
I
sl saturation current due to recombination in based simulation system such as SABER or SPICE.
space-charge layer Such a model was not available prior to its develop
A 'diode quality' factor (variable with cell type for ment by the authors, and one was developed to fill this
amorphous cells using the single exponential gap. This model of a PV array can be used in simula
model, but for polycrystalline cells may be set tion studies of power electronic PV conversion systems.
constant to 2 across all cell types; approxima
tion for Shockley-Read-Hall recombination in 2 Mathematical model for a photovoltaic cell
the space-charge layer [I])
Rs
A mathematical description of the current/voltage (II V)
cell series resistance
Rp
terminal characteristic for PV cells has been available
for some time. The double-exponential eqn. I, which
cell shunt resistance
e electronic charge, 1.6 x lO-19 C models a PV cell, is derived from the physics of the p
k Boltzmann's constant, 1.38 x 10-23 I/K n junction and is generally accepted as reflecting the
Vg band gap voltage, V behaviour of such cells, especially those constructed
from polycrystalline silicon [9]. It is also suggested that
T ambient temperature, Kelvin
cells constructed from amorphous silicon, usually using
lEE, 1999 thick-film deposition techniques, do not exhibit as
lEE Pmceemngs online no. 19990116 sharp a 'knee' in the curve as do the crystalline types,
and therefore the current/voltage model of eqn. 2 pro
and in revised form 10th September 1998
DOl: 1O.1049Iip-epa: 19990116
Paper first received 6th May vides a better fit to such cells. Eqn. 2 is in effect a sub
The authors are with the Department of Electronic and Electrical Engi set of the double exponential equation effected by

3TU. UK
neering. Loughborough University. Loughborough. Leioestershire, LEI I setting the second saturation current III to zero. Both
of these equations are implicit and nonlinear and there-

lEE Proc.-Electr. Power Appl., Vol. 146, No.2, March 1999 193
fore determination of an analytical solution is difficult. relatively straightforward, using iterative techniques,
-1,,2
once the five parameters are known. These parameters
I=Iph-Isl [e,rVt;R<) -1] [edvA'tn<) -1] will be different for each cell type, and will vary with
'V + IRs the environmental parameters. It is necessary to define

Rsh
the law with which this variation takes place (for a
given cell type) in order to complete the model. To do

:Rs
(1) this a set of equations must be defined; the solution of
which will relate each double-exponential model
1= Iph - Is (e'(Vi::'<) _ 1) _ 'V (2) parameter, in turn, to the current values of irradiance
and temperature, possibly incorporating constants
Working backwards from the equations, an equivalent which vary according to the specimen of array used.
circuit can be easily determined, and this aids develop
ment of the simulation model. This equivalent circuit is 2.1 Variation of double-exponential model
shown in Fig. 1. parameters
Little appears to be known about the variation of the
I
---+ double-exponential equation parameters with respect to
irradiance, with the exception of the photocurrent,
which is known to be linear. However, the temperature
variation is relatively simple to define. The general rela
tions of the double exponential model parameters, with
respect to temperature at a constant level of irradiance,
Fig.1
can be obtained from p-n junction physics [lO] and arc
Cell equivalent circuit (double exponential nwdel)
shown in cqns. 3-7:
Owing to the nature of these equations, there lies a Iph = Iph(nom)(1 + Ko(T - 300)) (3)
problem in determining values for the five double
exponential model parameters which would be repre
sentative of those of a physical array system. Although (4)
it is not beyond the bounds of possibility to use the

Rs
device physics to develop expressions for the I/V curve (5)
-
parameters, these would then only be in terms of semi
conductor material constants and manufacturing varia = Rs(nom) [1 - Ka(T 300)] (6)
( - K4 T)
bles such as doping densities. Most semiconductor
constants vary quite considerably with production RP = Rp(nom)e (I)
spread, are not provided on a manufacturer's data
The constants Ko-K4 are specific to a given specimen of
cell, while the base parameters Iph(nol11)' Rs(nom) and
sheet and are also sometimes quite difficult to deter
R (nO m) are values for the parameters at a temperature
mine with accuracy.
R
ot 300K. To complete the model it is necessary to
modify eqns. 3-7 to take into account the variation of
o
double
irradiance parameter exponential
determination solution
the five parameters with respect to irradiance. Irradi
+ ance and temperature could then be related mathemati
Iph

151
152
cally to cell current and voltage,
variables of unknown behaviour being present. In
with no further

--. V
A order to define the modifications, it is necessary to ana
R lyse a quantity of PV cell current/voltage data over a
s
Rp range of irradiance and temperature, in order to deter
mine the nature of the variation with irradiance. A
data acquisition system was developed to facilitate the
Fig.2 Ba,;c modelling process
temperature

extraction of sets of I1V curve data from a sample solar


cell at known values of temperature and irradiance.
The model behaves as a 'black box', in that the The system was designed to use a standard IBM com
power electronics designer may select the desired values patible PC as the computational core. Software was
of the environmental parameters of irradiance and tem developed to control the I/V data extraction process,
perature, in order to study the operation of a converter and the additional hardware required to facilitate the
system at either a fixed or a varying point upon the cell measurement included the usual signal conditioning cir
characteristics. To this end, eqn. 1 is of little use alone.
It is necessary to relate the five variable parameters of
cuits and 12-bit ADCs.

the equation to the two environmental parameters. The 2.2 Double exponential curve fitting
essential modelling requirement is depicted in Fig. 2 With the aforementioned I/V data acquisition system, it
and it can be seen to be a two-stage process. Firstly, is possible to generate sets of I1V curves from a speci
the five parameters of the double-exponential equation men solar cell across its operating range. However, in
must be determined from the cell type and the environ order to be able to determine the law linking irradiance
mental parameters of irradiance and temperature and and temperature to the five double-exponential model
secondly, the double-exponential current-voltage equa parameters, it is necessary to determine for each of the
tion may be solved in order to yield the electrical char available IIV data sets a corresponding set of double
acteristics of the cell. exponential model parameters.
Solution of the double-exponential model equation The double-exponential model equation is both non
for current in terms of voltage (or indeed vice-versa) is linear, and implicit. To arrive at an analytical solution

194 lEE Proc.-Electr. Power Appl., Vol. J46, No. 2, i'l4arch }999
of its five parameters, given a set of data at a specific 1 IphO
temperature, is no easy task, and a better approach IsIO
would be to look towards a numerical solution using
= "2 ( (eVac) -- )
c ----vr 1
(9)
curve fitting.
It was therefore decided to develop a PV-based . IphD
J820 ( 0)
_!
curve-fitting system which is capable of running on a 2 Voc )
( 2!,T 1 1
-

e
"

standard IBM compatible PC. The chosen method of ( )


-

solution of the PV curve was the Levenberg/Marquardt This leaves only Rj<j and Rpo to be determined. Most of
method [ 1 1], this being a robust method which exhibits the approximations that (;ould be used are derived in
sufficiently rapid convergence. The basic requirements some way [rom eqn. I, and thus rely upon the already
of the method are shown in the flowchart of Fig. 3. approximated values of the other parameters. [1]
presents a method based upon the use of the numerical
values for the integral under the IIV and power curves,
which appears to be valid; however, although the equa
curve

tions are dimensionally correct, it was found to be


fitting

impossible to obtain sensible values for the resistances


using them, often Rpo would end up negative. Eventu
Levenberg!
Marquardt

ally, a method involving the slope of the IIV curve at V


curve

= Von at V = and the value of I and V at the maxi


fitting

mum power point was developed.


Experimentation with the IIV curvc showed that R\
Newton!Raphson computation of
sol ution of the first partial

has a very marked effect upon the slope of the IIV


double exponential derivatives

curve at V = Vae R p, however, has an effect upon the


model equation of fitting function

lateral position of the maximum power point together


with a less marked effect upon the slope of the curve at
V = 0, I = 1M, To this end, the following system was
Fig.3 developed. Eqn. I is differentiated and evaluated at V
V oc ' I = and rearranged in terms of Rs to yield
Basic requirements of the Levenberg-Marquardt curve filting

[dVI 1
method

eqn. II:
=

The method requires a solution to the double-expo


1
nential model equation itself. As this equation is both Rsu dJ + (Xl" X2" ,,) +
nonlinear and implicit, a Newton-Raphson itera (11)
v,"
-

+
=

[ 1 1]
tive solution of the equation was used, arranged for
where
current in terms of voltage.
eIs1 eIs2
The Levenberg-Marquardt method additionally
(.N",,)
Xl " (
IT ) and X2 " AkT
r
= --e
r
= e
requires solutions of the first partial derivatives of the kT AkT
--

function to be fitted with respect to cach of thc func Examination of e qn . 11 shows that in the neighbour
tion parameters to be varied during the iterations. In hood of v,,,. the terms Xlv and X2v dominate over the
the case of the double-exponential model such equa much smaller 11R and therefore the IIR term may be
p
tions are simple to determine. neglected. The tmal equation for Rso is given by
J!

Since the Levenberg-Marquardt method is an itera eqn. 12


tivc one, initial values will be required for each of the
five variable parameters of eqn. I, namely Rs' R J" Is], (12)
Is2 and Iph before the iteration can start. A is held con
stant, equal to 2, across the fit run for double exponen
In practice this gave good approximations for R,,,
tial modelling.
A similar approach to that used in determining R,o
The determination of thc initial values is a nontrivial
can be adapted to estimate Rp based upon the slope of
task, since inappropriate selection of initial values will
the IIV curve at I = I"" However, the slope at this
result in nonconvergence of the algorithm. Considera
point does not bear as marked a dependence upon R p
ble attention therefore needs to be paid to the correct
as does the position of the maximum power point. Two
selection of these initial values. Tn the following
methods were set up, and compared. The first of these
descriptions, initial values of the parameters are
involved evaluating eqn. II at I I,.!" and rearranging
denoted by the subscript 0.
1= in terms of Rp to give eqn. 13.
=

At 1.'0 V = 0, }h is approximated well by Isc as



the portion of current flowing down the diodes and the

[ 1 1
parallel rcsistance is very small: Rs is small, therefore
the voltage drop across it is also small. At V = V ot' I
0, the terms in Rs drop out of the equation, and the
= Rpo = -

(':,i I
1

[+R., )
+ Xl; + "\2,
r r (13)

current flow in the parallel branches is dominated by where


the two diode currents. Therefore
Is2
(8) Xl , =-e
lsI (["n
vt
,,'
,. ) and X2 , = --e
Avt
(I,A"t
ell.,)

The saturation currents may then be approximated by The second of the two methods involved evaluating
making an assumption that these two currents are eqn. I at the maximum power point, using the approx
roughly equal as the cell voltage tends to zero, yielding imated value of R,o, and rearranging for Rpo to give
eqns. 9 and 10. eqn. 14.

lEE Proc.Electr. Power Appl.. Vol. 146, No, 2. March 1999 195
Iterative loop equations:

Is2 ()
.XJ kT
lsI e ()
)\2 Akl
r .

= = --e
vt ,. Avt
-

v '

Rs. o = - [dV I
dI vo,
+ 1 1
Xl" + X2v + R '
I
]
Xl',
[ Is1
-e
( d.," R,II
kT
)] X2 '
T
=
[182
--e
( elM R.,"
ACT
)]
Both systems gave a value of Rpo that resulted in con vt Ad
= l

vergence in most cases, but the approximation was not


as good as that of Rso from eqn. 12. This is not surpris
ing as Rp is a parametcr with a large value in compari
son to the values of the other parameters, particularly
Rpo = - [ 1

"VI . +R,':dl
dI r8
1 ,
+X1; +)\2;
1
the saturation currents. Small perturbations in the satu (16)
ration currents can have a large inf1uence upon the
approximated value of Rpo. However, the reliability of
An alternative iterative method makes use of the sec
ond of the two methods for the determination of Rp'
convergence was better from the values calculated from
eqn. 14 and this was used in the final implementation.
i.e. eqn. 14, and involves placing this within an iterative

As with Rs' the convergence of Rpo was found to be


loop. Together with equations to achieve a better solu
tion of the saturation currents and the photocurrent,
slower for the cases of extremely low irradiance. This
again is not surprising as Rp has greater dependence
thc iterative loop equations become

upon changes in other parameters; it is the largest and


could be of the order of 10-3, whereas the saturation
currents are of the order of 10-12. However, bad
approximation leading to nonphysical convergence of
the curve fitter was largely confined to regions of low
irradiance. At present, initial values may be entered by
hand should the computed method fail.
The system implements a heuristic algorithm based
upon eqns. 13 and 14, with algorithm selection depend
ing upon thc curve data and success or failure of one
or the other algorithms. If one algorithm fails, the
other is attempted. If both methods fail on a difficult
curve then values can still be entered by hand.
The final parameter to be determined is an initial
value for A. In the double exponential model A is set to
2 and not allowed to vary during the curve fit, as this
providcs a first approximation for the Shockley-Read
Hall recombination current in the junction depletion
region, and is acceptable for all practical cases (17)
(although the developed system does, in fact support
single exponential modelling with A varying, this was
Essentially, the iterative methods place the existing
static solutions of Rpo and Rso within an iterative loop.
not used during the tests). Each iteration arrives at a better approximation of the
In situations where the above methods for determin
ing the initial values for Rs and Rp do not result in
parameters. Once again the software uses a heuristic
implementation of the initial parameter value extrac
physically acceptable values, an alternative approach to tion. if the static methods (eqns. 12 and 13) fail to
the determination of initial values can be adapted. This deliver sensible initial condition values (> 0) the alter
is an itcrativc method, including within the iterative native iterative methods (eqn. 15 with eqn. 16, eqn. 15
loop a better approximation for the two saturation cur with eqn. 17) are also tried in turn. If these fail the
rents and the photocurrent. It was seen that eqns. 12- software prompts for manual input of initial values.
14 could be placed in such a loop, with two additional Once sensible values for initial parameter values are
equations determining the Iph and 1'1/2 values. The determined by one means or another, the curve-fitter is
equation sequence is given below in eqns. 15 and 16. then called. The data set is rejected if the curve-fitter
Eqn. 15 gives the initial conditions, while eqn. 16 gives again fails to converge or returns unacceptable parame
the equations solved in the iterative loop. ter values.

Initial condition equations: 2.3 Double exponential model parameter


determination
dV dV Referring to Fig. 2, it can be seen that the modelling
Rpo
Rso = dI
I \ oc
7

Ao
=
dI
2
I Ii<C
process requires firstly the determination of the double
exponential equation parameters for the cell at each
Iphu Ise, =
=
specific value of irradiance and temperature. This was
achieved by implementing a first-level fit of the double
Is20
_ Ise Ise
Is10 - (evoc) , -
_
(duRoQ )
2e ---pr - 1 2e
exponential parameters to the J/V data sets using the
2k1'
-1 method described in Section 2.2. An example of this
(15) can be seen in Fig. 4. This shows an experimental II V

lEE Proc.-Elecfr. Power Appl.. Vol. 146. No. 2. March 1999


11.1155

8.1158
l
- oalo ta
e"p l
.. . .. ..
11.845

K.
ok

11.-

a."3
,
C
..
u
.. 11.838 -I---
e
n

11.1125 -I--- Iph : i.69116Z I A : Z.eeeeeee.eee


1$1 : 6.111i3ge....18 I lis : i.1I817'J'Je-881
IsZ : 9 .151367 I Rp : 3.Z3ZiiZe.aeZ 1\
11.11211 -I---

11.1115 -I--- Press d key \


11 .11.8 :\
\
... -

11.-
11<1 8.8:1 1.8 1.:1 211 2:1 11.311 ".35 11.411 8.4:1 a.sa
Vol ialfe (V)
Fig.4 Fitted data superimpnsed upon 'raw' data

Table 1: Table of constants for the polycrystalline cell used in the tests

Parameter Constant values

Iph K, = -5.729 X 10-7 K, =-0.1098

'" K,=44.5355 K3 = -1.264 X 10'

Is, K.= 11.8003 K5=-7.3174x 103

A K6 = 2 K7 = 0

Rs Ka=1.47 K9 = 1.6126 X 103 K10 = -4.474 X 10.3

Rp K" = 2.303 X 106 K"=-2.812 X 10-'

curve. Superimposed upon the experimental curve is an produced are given below in eqns. 18-23. Since A is
l/V curve back-calculated from the double-exponential held at 2, the constants K6 and K7 are set at 2 and 0,
model parameters given, together with the values of the respectively.
parameters themselves. Iph = KoE(1 + KlT) (18)
2.4 Generation of equations relating the Is1 = K2T3e( ) (19)
double exponential model parameters to
irradiance and temperature 182 = K4Te(!?-) (20)
A
Equations relating the double-exponential equation
= K6 +K7T (21)
parameters to temperature have been published [10].

K'8 Kg + K'10 T
These equations give the variation of the parameters
with respect to temperature only. They do not take into
R s = + If (22)
account cffccts of changes in irradiance. They are
therefore unsuitable in their present form for use in a Rp = Kl1e(K12T) (23)
general-purpose PV modelling system where both tem The equations are applicable to any PV cell which sat
perature and irradiance may vary. A new sct of equa isfies the double-exponential model. It can be seen that
tions was developed incorporating irradiance terms for the equations contain a total of thirteen constants,
those parameters that are affected by irradiance. The these constants being specific to the cell that has been
equations were developed as described below. characterised by the system. Table 1 lists the values of
Firstly, the double exponential equation parameters, the constants for a sample of a polyerystalline cell used
extracted as described in Section 2.2, were plotted during the experiment.
against temperature and irradiance; the plot being used Figs. 5-9 show the experimentally extracted values of
as an aid to determine the nature of the relationships the double exponential model parameters superimposed
involved. Taking the parameters in turn one by one upon values generated from the model equations.
and determining the optimum relationship, the follow
ing equations were derived using a combination of pro 2.5 Circuit-level model
posed eq uations and curve fitting, in which the The modelling system developed is based around the
optimum fit is the one in which the chi-squared [11] characteristics of a single PV cell. The models of the
valuc was at a minimum. Accordingly, the equations so cells are such that if connected in an array the array

lEE Pmc-Electr. Power App/., Vol. 146. No.2, March 1999 197
can be treated (mathematically) as a single cell with of each panel into a single modelling unit, as the irradi
mUltipliers incorporated accordingly, dependent upon ance. and hence the temperature. is unlikely to change
the number of series/parallel chains in the array. This across the dimensions of a single panel but could possi
only holds if the irradianee and temperature are bly change across the plant in its entirety. Either way,
constant across the entire surface of the array. For a the modelling system opted for gives the greatest flexi
small array (c. 1 m2) this is likely to be true. However, bility in the manner in which the array may be simu
for a 1ield of arrays such as encountered in a large pho lated; the effect of a cloud passing could be simulated
to voltaic plant, this may well not be the case, and the by reducing and increasing the irradiance across the
simulated array would have to be constructed from dis plant in a 'Mexican wave' fashion. for example.
crete cell templates each representing the appropriate
2.5 -------
combination of cells, as necessary. Fig. 10 shows the
arrangement of an m x n array, while Fig. 1 1 shows the . t . . /;.,
decomposition for a 2 x 3 array as an example. . ..
2.0
qU}..
a:
Q) 1.5
"
"-9.
1 0----- --
. ,,<,
'"
c:


--

u;

.. &

'w 1 .0
T
!!! t
x

<)J "'Yl
.. . .
0
. . . . . . .

6
,s.
a T "* .
: t *
<:f3
0.5

E &.'&

4 i i i i
::l
0
295 300 305 31 0 315 320 325 330
0 te mpe rature , K

afR,
2
Fig.S Variation lVith temperature, with carrespondingjilled points
0 superimposed
31 0 31 5 *R
clcutated R.\
295 300 305 320 325 330

temperature, K

Fig.5 Variation uf 1"" with temperature and irradiallce, together with


8
fitted points.
{ph +

Ifl/'
+
x calculated

....
5 ------ a:
...- ."..
" 4 + +
+* ...., , ...:..t..
+
4+------- + +

.i
+
ar :: -
+-----------------------.---
-..
+ n+
6
2
+
3

:.

c 2 t-------------------------------4---
# w o

a .
295 300 305 31 0 315 320 325 330
te mpe rature , K

Rp with tem e at re, with corresponding jitted


*

ri i p r ll
__t .1. f.:" .,.
* *

O+-La--._--_,----._--,
* Fig.9 Va at on of

+ Ry experimental
poims superimposed

I<p. calculated
295 300 305 31 0 31 5 320 325 330
te mpe rature , K

r
chain 1
Fig.6 Variation afal! values of,!,} with temperature. fogethe with (or
respondiJlg/l11l!d p()inl'
*II]
GllculateJ 'II
Iph IPh
ce ll1 ce ll 3

.. --re::J- ]
3 ------

r--r-T"
h 1 h Rs Rs
"? Rp cell4 Rp
2+------
: cell n :::
cell 2

.. .. .
i I


: array
II

...
ce ll n
negative bus I

Fig. 10 Cell connections funning an array


.
*.

.. '1:
* *
*
* *
**
...:

column composition

te mpe rature , K column de composrtion

sponding jilled points


Fig.7 Varia/ion ol all values olI" with temperature. including corre

*
1"2
calculated 1.12

The parameters add by superpositIOn to an extent,


with the exception of the two diode currents. As these
are n onlinear , a multiplier N.I must be placed within the row decomposition array mode l

exponential term. Depending upon the design and 21dl

dimensions of the array it may be possible to simulate


the array by collapsing the series chains into a number
of parallelled modelling units or, in the case of a large
plant. the best approach may be to collapse the model Fig.11 Array decompositiun to jorm composite model

19R lEE Proc.Eleclr. Power ApI'/., Vol. 146. No 2. March 1999


In Figs. 10 and 11 the two diode currents Idj and Id2 power data back calculated from the model is also
are the solution of the second and third exponential superimposed upon the curve and serves to show the
terms in cqn. I; thus in the composite modcls, to repre accuracy of the fit. Fig. 14 is an I/V sweep taken from
sent series chains, the IV equation must incorporate the the SABER model at the same irradiance and tempera
Ns multiplier. The complete multidimensional array ture as Fig. 13, and using the constant KoK12 set
model equation is shown in eqn. 24 below, extracted. It can be seen that the curves are virtually

I=Np [IPh-Isi (ee[(:;):rfp)R'J -1) identical.

0.07

:s:
OJ'
(ec[(#;):k)R'J -1)
- [s2
0.06
......

Rs]
0.05
a.

...
0.04

1" 0.03
() CJ+

_

Rp
(24) u
:; 0.02

0.01
-
-- I ..,
'" c-I
where Ns and Np' arc the number of series cells, and thc o
o
voltage, V
0.1 0.2 0.3 0.4
number of parallel cells, respectively.
The actual implementation in SPICE or SABER is Fig.13 }Oxperimental //V data at irradiance 3291, temperature 326.8K
very straightforward, consisting of a solution to eqns. C experimental data

1823 followed by a solution to eqn. 24. The constants


x calculated data
* experimental power

KoKj2' together with the environmental variables tem o calculated power

perature and irradiance, are passed to the cell template


through fields in a solar-cell schematic symbol, 80

designed for the appropriate schematic-capture utility


front-end for thc simulator. For cxample, the PV cell
70

symbol using the SABER simulator is shown in 60


Fig. 12. Note that for the case of SABER, temperature
is a global parameter within the framework of the sim 50
E
1"
ulator and does not have to be specified to each tem
::l
40
plate through the parameter list.
U
p
30

20

to

0
50
voltage, mV
0 1 00 150 200 250 300 350 400 450

Fig.14 I/V sweep obtained ji-um SA RFR tmtplate using


parameters at irradiance 3291. temperature 326.8K
extracted
m

3 Conclusions
solar cell

KO: 'req' A model suitable for use by power electronics special


KI: 'req' ists has been developed, and has been designed for easy
K2: 'req*
K3: 'reg'
implementation on simulation platforms such as SPICE

K4: 'req'
or SABER. The model accepts irradiance and tempera

K5: 'req*
ture as input parameters and outputs the IIV character

K6: 'reg*
istic for the cell for the above conditions. This model
K7: 'req' can be applied to photovoltaic cell types whose device
K8: 'req' physics conform to double-exponential behaviour.
K9: 'reg'
KID: *req'
Using the modelling system presented in the paper, cell

Kll: 'req'
samples may be characterised to obtain a set of con
stants. If thcsc constants are submitted to a circuit-level

K12: 'req'
simulation templatc the electrical behaviour of arrays
EI: 'req' of cells may be simulatcd across the range of irradiance
nseries: 'req' and temperatnre for which the model has been defined.
nparallel: 'req' In the context of powcr electronics, thcre is now availa
Fig.12 PV cell symbo!using DesignStar in SABER ble a model for a photo voltaic array installation, which
will allow the effects of varying irradiance and temper
2.7 SABER model result ature to be simulated in conjunction with a power con
The SABER model was used to demonstrate the per version systcm. This will enable the behaviour of the
formance of the modelling process. Fig. 13 shows a power convcrsion system to be analysed and optimised
sample data set from those extracted from the cell for operation in the field of solar photovoltaic power
including the power curve for the cell. The IIV and conversion.

lEE Prot.-Electr. Power Appl. Vol. 146, No.2, March 1999 199
4 References 6 NENTWICH, A., SCHNEEBERGER, M., S ZELESS , A., and
WILK, H.: ' 30kW photovoltaic plant in the Alps of Austria'.
Proceedings of the 10th European Phofovolta;c solar energy con

digital computer simulation o f an electrical power subsystem'. 7 CORVI. c., VIGOTTI, R.,
GLYNN, L.W., McDERMOTT, J.K., and OSS, J.P.: 'SABER ference. Lisbon. Portugal. 1991, pp. 766--770
ILICETO, A., and PREVI, A.:
Proceedings of the 23rd Intersociety Energy Conversion Engineer 'ENEL's 3MW PV power station preliminary design'. Proceed
ing conference, 1988, pp. 543-546 ings of the 10th European Photovoltaic solar energy conference,

A., and TOKIZAKI, H.: 'Resi de n tial solar powered air condi
2 TANAKA, K., SAKOGUCHI, E., FUKUDA, Y., TAKEOKA, Lisbon, Portugal, 1991, pp. 1277-1280
8 TANAKA, K., SAKOGUCHI, E., FUKUDA, Y., TAKEOKA,
A., and TOKIZAKI, H.: 'Residential solar powered air condi
tioner'. Proceedings of the 1993 European conference on Power
tioner'. Proceedings of the 1993 European conference on Power
.elt'clronics, Brighton, England, 1993, pp. 127-132

9 PROTOGEROPOULOS, c.,
electronics, Brighton, England, 1993, pp. 127-132
DUARTE, J.L., WIJNTJENS, J.A.A., and ROZENBOOM, J.:
BRINKWORTH, B.1.. MAR-
'Designing light sources for solar powered systems'. Proceedings SHALL, R.H., and CROSS, B.M.: 'Evaluation of lWo theoretical
of the 1993 European conference on Power electronics, Brighton, models in simulating the performance of amorphous silicon solar

M.,
England, 1993, pp. 78-82 cells'. Proceedings of the 10th European Photovollaic solar energy

10 VEISSID, N., and DE ANDRADE , A.M.: 'The I-V silicon solar


4 SAVARY, P., NAKAOKA, and MARUHASHI, T.: 'Novel conference, Lisbon, Portugal, 1991, pp. 412-415

applications', lEE Proc. B. Electr. Power Appl., 1986, 133, (4), pp.
type of high frequency link inverter for photovoltaic residential
cell characteristic parameters temperature dependence, an experi
mental study using the standard deviation method'. Proceedings

5
279-284
of the 10th European Pho(ovo/taic solar energy conference, Lis

II PRESS, W.H., TEUKOLSKY, S .A . . , VETTERLING, FLAN


CHIANESE, D., CAMANI. M .. CEPPl, P., and IACOBUCCI,
bon, Portugal, 1991, pp. 43-47
D.: 'TISO: 4kW experimental amorphous silicon PV power
plant'. Proceedings of the 10th European conference on Photo NERY, B.P.: 'Numerical recipes in C - the art of scientific com
voltaic solar energy, Lisbon, Portugal, 1991, pp. 755-758 puting' (Cambridge University Press. 1992, 2nd edn.)

200 lEE Proc. -Electr. Power Appl. . Vol. 146. No. 2. March 1999

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