BSC019N02KS G

OptiMOS2 Power-Transistor
Product Summary
Features
V DS 20 V
For fast switching converters and sync. rectification
R DS(on),max 1.95 m
Qualified according to JEDEC1) for target applications
ID 100 A
Super Logic level 2.5V rated; N-channel

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Superior thermal resistance PG-TDSON-8

Avalanche rated

Pb-free plating; RoHS compliant

Type Package Marking

BSC019N02KS G PG-TDSON-8 19N02KS

Maximum ratings, at T j=25 C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID V GS=4.5 V, T C=25 C 100 A

V GS=4.5 V, T C=100 C 100

V GS=2.5 V, T C=25 C 100

V GS=2.5 V, T C=100 C 95

V GS=4.5 V, T A=25 C,
30
R thJA=45 K/W2)

Pulsed drain current I D,pulse T C=25 C3) 200

Avalanche energy, single pulse E AS I D=50 A, R GS=25 800 mJ

I D=50 A, V DS=16 V,
Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s
T j,max=150 C

Gate source voltage V GS 12 V

1)
J-STD20 and JESD22

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Maximum ratings, at T j=25 C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Power dissipation P tot T C=25 C 104 W

T A=25 C,
2.8
R thJA=45 K/W 2)

Operating and storage temperature T j, T stg -55 ... 150 C

IEC climatic category; DIN IEC 68-1 55/150/56

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 1.2 K/W

SMD version, device on PCB R thJA minimal footprint - - 62

6 cm2 cooling area2) - - 45

Electrical characteristics, at T j=25 C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 20 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=350 A 0.7 0.95 1.2

V DS=20 V, V GS=0 V,
Zero gate voltage drain current I DSS - - 1 A
T j=25 C

V DS=20 V, V GS=0 V,
- - 100
T j=125 C

Gate-source leakage current I GSS V GS=12 V, V DS=0 V - - 100 nA

Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=50 A - 2.3 3.0 m

V GS=4.5 V, I D=50 A - 1.6 1.95

Gate resistance RG - 1.9 -

|V DS|>2|I D|R DS(on)max,

Transconductance g fs 100 210 - S
I D=50 A

2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3
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Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss - 9600 13000 pF

V GS=0 V, V DS=10 V,
Output capacitance C oss - 2700 3600
f =1 MHz
Reverse transfer capacitance Crss - 410 620

Turn-on delay time t d(on) - 15 - ns

Rise time tr V DD=10 V, V GS=4.5 V, - 187 -

Turn-off delay time t d(off) I D=50 A, R G=1.6 - 95 -

Fall time tf - 8 -

Gate Charge Characteristics 4)

Gate to source charge Q gs - 19 25.1 nC

Gate charge at threshold Q g(th) - 9 12.1

Gate to drain charge Q gd V DD=10 V, I D=50 A, - 11 16.9

Q sw V GS=0 to 4.5 V
Switching charge - 21 29.8

Gate charge total Qg - 64 85.0

Gate plateau voltage V plateau - 2.0 - V

V DS=0.1 V,
Gate charge total, sync. FET Q g(sync) - 59 78.5 nC
V GS=0 to 4.5 V

Output charge Q oss V DD=10 V, V GS=0 V - 37 -

Reverse Diode

Diode continuous forward current IS - - 100 A

T C=25 C
Diode pulse current I S,pulse - - 400

V GS=0 V, I F=50 A,
Diode forward voltage V SD - 0.8 1.2 V
T j=25 C

V R=10 V, I F=50 A,
Reverse recovery charge Q rr - 55.6 - nC
di F/dt =100 A/s

4)
See figure 16 for gate charge parameter definition

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 BSC019N02KS G
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS4.5 V

120 120

100 100

80 80
P tot [W]

I D [A]
60 60

40 40

20 20

0 0
0 40 80 120 160 0 40 80 120 160

T C [C] T C [C]

3 Safe operating area 4 Max. transient thermal impedance

I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p)
parameter: t p parameter: D =t p/T

103 101
limited by on-state
resistance

10 s

100 s
102 100
0.5
1 ms
0.2
Z thJC [K/W]

0.1
I D [A]

10 ms
101 10-1 0.05

0.02
DC
0.01

100 10-2
single pulse

10-1 10-3
-1 0 1 2
10 10 10 10 10-6 10-5 10-4 10-3 10-2 10-1 100
V DS [V] t p [s]

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5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C
parameter: V GS parameter: V GS

200 9
4V 3V

175
2.5 V 2.4 V 8

7
150

6
1.8 V
125

R DS(on) [mW]
2.2 V 5
I D [A]

100
4 2V

75
2.2 V
3
2V 2.5 V
50
2 3V

4.5 V
25 1.8 V 1 3.5 V

1.6 V
0 0
0 1 2 3 0 10 20 30 40 50
V DS [V] I D [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C
parameter: T j

100 350

300

75
250

200
g fs [S]
I D [A]

50

150

25 C
100
25
150 C

50

0 0
0 1 2 3 0 25 50 75 100
V GS [V] I D [A]

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9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=4.5 V V GS(th)=f(T j); V GS=V DS

4 1.6

3 1.2
R DS(on) [m]

3500 A

V GS(th) [V]
2 98 % 0.8 350 A

typ

1 0.4

0 0
-60 -20 20 60 100 140 -60 -20 20 60 100 140
T j [C] T j [C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j

105 103

102

104
Ciss 25 C
150 C
C [pF]

I F [A]

Coss
101

150 C, 98%
103
25 C, 98%

Crss
100

102 10-1
0 5 10 15 20 0 0.5 1 1.5 2
V DS [V] V SD [V]

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13 Avalanche characteristics 14 Typ. gate charge

I AS=f(t AV); R GS=25 V GS=f(Q gate); I D=50 A pulsed

parameter: T j(start) parameter: V DD

103 5

16 V
4

25 C 10 V

102

3 4V

V GS [V]
100 C
I AV [A]

125 C 2
101

100 0
100 101 102 103 0 20 40 60 80
t AV [s] Q gate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

24
V GS

Qg

22
V BR(DSS) [V]

20

V g s(th)

18

Q g(th) Q sw Q g ate

Q gs Q gd
16
-60 -20 20 60 100 140
T j [C]

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Package Outline PG-TDSON-8

PG-TDSON-8: Outline

Footprint
Dimensions in mm

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Package Outline

PG-TDSON-8: Tape

Dimensions in mm

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Published by
Infineon Technologies AG
81726 Munich, Germany
2008 Infineon Technologies AG
All Rights Reserved.

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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

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For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office ( www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

Rev. 1.1 page 10 2008-08-11

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