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Abstract: BAW (Bulk Acoustic Wave) devices have natural temperature compensation,
resonators are rapidly growing highly integrated often dependant on the material used for the
devices with wide range of applications in uppermost reflector layer [10]. There are many
wireless domains. Fabrication of thin film BAW fabrication challenges and issues are to be taken
resonators are highly challenging over material care by optimization of the process. Performance
selections and measures of materials. RF of designed BAW resonator for wireless
properties of BAW resonators depending on the applications is better studied and analyzed by
device parameters are simulated for their optimizing the control parameters. This paper
performance using COMSOL Multiphysics tool. proposes the application of simpler and straight
In our study the measures of highly effective forward method by using Taguchis orthogonal
control parameters of resonator are actively arrays.
optimized using Taguchis orthogonal array
method. This study is quite competitive and is a 1.1 Orthogonal Array
tool for designers in selecting device parameters
with required quality factor for futuristic wireless Taguchis method with Orthogonal
applications and is cost effective. array matrix is comparatively structured and is
been widely used from 1940s for designing the
Keywords: BAW resonators, acoustic thin experiments. Performing few experiments can
films, Comsol Simulation, Orthogonal arrays, aid for convergence towards optimal values for
Optimization, efficient design. Widespread applications of
Orthogonal array implementation ranges from
1. Introduction Electromagnetics [11], cutting parameters for
surface roughness measurement [12],
BAW has several advantages as they are Polymerase Chain reaction (PCR) [13]. In
remarkably small in size, have better power general, fabrication of thin films involves higher
handling abilities and better temperature costs and is also time consuming. Taguchis
coefficients leading to more stable operation and method reduces the cost and time factor by
hence preferred over SAW. From a practical applying orthogonal matrix combinations.
point of view SAW filters have considerable
drawbacks beyond 2 GHz whereas BAW devices 2. Experimental and simulation details
up to 16 GHz have been demonstrated [1]. Due
to good selectivity and steep transition band In this study the novel iterative implementation
offered for cellular applications, modelling and of Taguchis method of orthogonal array was
development of high Q thin-film BAW devices used for optimizing the efficient design values of
is a topic of research gaining attention [2]. thin film BAW resonator. Structure of BAW
Transmit and receive bands of the US-PCS resonator, as shown in figure 1, includes the top
standard are close in frequency in the aluminum layer followed by the piezo layer then
commercially available for US-PCS (1.85GHz- the aluminum layer and finally the silicon layer.
1.91 GHz) applications. These applications need The variates considered in this experimentation
nearly lossless high Q resonators for RF filters includes thickness of Surficial Aluminum layer
[3-6]. The resonator is of thin film [7], [8], [9] A ranging from 0.1m to 0.2 m, Thickness of
type in which the substrate is etched away on the piezo layer B ranging from 8 m to 11 m ,
back side. The natural frequency of the material Voltage applied to piezo ranging from 0.75 to
and the thickness are used as design parameters 1.25 V and the width of resonator ranging from
to obtain the desired operating frequency. BAW 800 m to 1200 m. In order to select the
parameters appropriately array based matrix was
implemented. The variables considered for
simulation stretches with element spacing for all
the parameters relative to their parametric
values.L4 and L9 arrays [14]in orthogonal matrix
was considered for study with possible
multivariate terms.
Experimentation was performed by Table 1 L4 array based results
applying the parametric combinations following
orthogonal array matrix to optimize the For the L9 array four parameters were varied for
displacement. We used COMSOL Version 5.0 , simulation study and are as given. Thickness A
MEMS MODULE to compute the Eigen modes varied from 0.175 m to 0.225 m, thickness B
and to apply the same for the frequency varied from 8.5 m to 10.5 m, width of
analysis. The simulated result presents the Q- resonator varied from 900 m to 1100 m and
factor and admittance range for the frequency the applied voltage varied from 0.75V to 1.25 V.
designed. This study helps for the better The results obtained are summerised in table 2.
optimization of the parameters involved in The variation in the displacement of resonator
designing of BAW resonator for wireless was observed in range from minimum of
applications. 1.75x10-5 m (figure 2) to 1.83x10-3 m (figure
3). The row shown in red is for the maximum
displacement while the green row shows the
combinations for minimum displacement.