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JAN. 2010
Block Diagram
VCC
INVERTING
INPUT
OUTPUT
NON-INVERTING
INPUT
GS358
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Pin Assignments
OUTPUT A 1 8 VCC
INVERTING
INPUT A 2 7 OUTPUT B
-
A+ +
B-
NON-INVERTING
INPUT A 3 6 INVERTING
INPUT B
GND 4 5 NON-INVERTING
INPUT B
TOP VIEW
Ordering Information
Device Package
GS358PF DIP-8
GS358SF SOP-8
Marking Information
GS358
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Absolute Maximum Ratings
Symbol Parameter Value Unit
VCC Single Supply 32 V
VCC, VEE Split Supply 16 V
VIDR Input Differential Voltage Range 32 V
IOS Output Short-circuit to GND Continuous
TJ Junction Temperature 150 C
TSTG Storage Temperature Range -65 to +150 C
TA Operating Ambient Temperature Range 0 to 70 C
DIP-8 125
JA Thermal Resistance ( Junction to Ambient ) C/W
SOP-8 160
DIP-8 42
JC Thermal Resistance ( Junction to Case ) C/W
SOP-8 22
ESD ESD Rating (HBM) 2 KV
GS358
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Electrical Characteristics
at specified free-air temperature, VCC=5V (Unless Otherwise Noted)
VID = -1V,
25C 12 30 A
Vo = 200mV
VCC at 5V,
Short-circuit
IOS GND at 5V, 25C 40 60 mA
output current
Vo = 0V
GS358
Vo =2.5V,
Full range 0.7 1.2
No load
Supply current
ICC VCC = MAX, mA
(two amplifiers)
Vo = 0.5Vcc, Full range 1 2
No load
*All characteristics are measured under open-loop conditions with zero common-mode input voltage unless
otherwise specified. MAX VCC for testing Purposes is 30V. Full range is 0C to 70C
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Typical Performance Characteristics
Input Voltage Range Input Current
90
15 VCM =0VDC
VIN-INPUT VOLTAGE(VDC)
IB - INPUT CURRENT(nADC)
80
70
60 V =30VDC
10
N E G A T IV E 50
P O S IT IV E
40 V =15VDC
5 30
20 V =5VDC
10
0 5 10 15 0
-55 -35 -15 5 25 45 65 85 105 125
V O R V -P O W E R S U P P L Y
V O L A T A G E ( V D C )
TA - TEMPERATURE(C
C)
160
ID - SUP PL Y CURRE NT DRAIN(mA
4
V
AVOL-VOLTAGE GAIN(dB)
mA ID
120
RL=20K
RL=20K
3
RL=2K
RL=2K
2 80
1 T A =0 C TO +12 5 C
C 40
TA =-55 C
C
0 10 20 30 0 10 20 30 40
V -S UPP LY V OL TA G E(VDC ) V -SUPPLY VOLTAGE(V DC)
160
10M 120
0.1F
AVOL-VOLTAGE GAIN(dB)
120 V 100
REJECTION RATION(dB)
CMRR-COMMON MODE
VO
100 V IN V /2
80
80
60 1K
V =30V DC 1K
60 CT A+125C
-55C C +15V
40 100
100 VO
40 1K BUFFER
GS358
0 0
1.0 10 100 1K 10K 100K 1M 10M 100 1K 10K 100K 1M
f -FREQUENCY(Hz) f -FREQUENCY(Hz)
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Typical Performance Characteristics (Continue)
Voltage Follower Pulse Response Voltage Follower Pulse Response(Small Signal)
INP UT V OL TAGE O UTPUT VO LTAG E
4 500
2.0K
R L2.0 K
eo-OUTPUT VOLTAGE(mA)
3 eo
450
V OUT(V )
V = 15 VD C
2 ein 50pF
1 400
INTPUT
0
350
3
OUTPUT
2
V IN(V )
300
1 V =+30V DC
250 TA =25C
C
0 10 20 30 40 0 1 2 3 4 5 6 7 8
t - TIM E ( s) t - TIME(s)
20
100K 8
VO- OUTPUT SWING(VP-P)
REFERENCED TO V (VDC)
1K 15VDC
VO 7
15 V
V =OUTPUT VOLTAGE
V IN
7VDC 2K 6
V
V /2
5 IO
10
4
5 3
INDEPENDENT OF V
2 T A=25C
C
0 1
1K 10K 100K 1M 0.001 0.01 0.1 1 10 100
f -F R E Q U E N C Y (H z ) IO- OUTPUT SOURCE CURRENT(mADC)
D C) DC)
10 90
VOLTAGE(mV
(mA
LTAG E(V
80
V =5V D C IO
V =15V D C 70
1 V =30V D C 60
VO - OUTP UT VO
50
V
40
0.1 IO
30
GS358
V /2
VO 20
C
T A =25C 10
0.01
0.001 0.01 0.1 1 10 100 0
-55 -35 -15 5 25 4 5 65 8 5 10 5 12 5
IO -OUT PUT S IN K CURRENT(mA D C ) TA - TEMPERATURE(C
C)
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Package Dimension
E/2 2
E1/2 R1
E1 E R
GAUGE
PLANE
1
PIN 1 L2
MARKING
e b
h
c
A A2
A1
Dimensions
Millimeters Inches
SYMBOL
MIN MAX MIN MAX
A 1.35 1.75 .053 .069
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DIP-8 PLASTIC PACKAGE
E
G
1/2 e GAUGE
PLANE
PIN 1
MARKING E1 c
b2
ec
D A2 E
A1
BASE PLANE A
SEATING PLANE
D1 b eA
1/2 LEAD
4 PLACES e eB
b3
Dimensions
Millimeters Inches
SYMBOL
MIN MAX MIN MAX
A - 5.33 - .210
A1 0.38 - .015 -
A2 2.92 4.95 .115 .195
b 0.36 0.56 .014 .022
b2 1.14 1.78 .045 .070
b3 0.76 1.14 .030 .045
c 0.20 0.36 .008 .014
D 9.02 10.16 .355 .400
D1 0.13 - .005 -
E 7.62 8.26 .300 .325
E1 6.10 7.11 .240 .280
e 2.54 (TYP) .100 (TYP)
eA 7.62 (TYP) .300 (TYP)
GS358
eB - 10.92 - .430
eC 0.00 1.52 .000 .060
L 2.92 3.81 .115 .150
G 0.38 (TYP) .015 (TYP)
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NOTICE
Information furnished is believed to be accurate and reliable. However Globaltech Semiconductor assumes no
responsibility for the consequences of use of such information nor for any infringement of patents or other rights of
third parties, which may result from its use. No license is granted by implication or otherwise under any patent or
patent rights of Globaltech Semiconductor. Specifications mentioned in this publication are subject to change
without notice. This publication supersedes and replaces all information without express written approval of
Globaltech Semiconductor.
CONTACT US
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886-2-2657-9980
886-2-2657-3630
sales_twn@gs-power.com
Wu-Xi Branch
No.21 Changjiang Rd., WND, Wuxi, Jiangsu, China (INFO. &. TECH. Science Park Building A 210 Room)
86-510-85217051
86-510-85211238
sales_cn@gs-power.com
RD Division
1-408-457-0587
Notice
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