O MEMS Tutorial

STANFORD
OPTICAL MICRO-ELECTRO-
MECHANICAL SYSTEMS
(O-MEMS)
J. S. Harris, Jr.
Stanford University
O-MEMS APS Short Course 3/11/01 JSH-1 1
Outline
STANFORD
l Overview
l Advantages
l Fundamentals
l Mechanical O-MEMS
l Optical Communications Network Switches
l Optical Bench
l Displays
l Torsional Mirror
l Grating Light Valve
l Semiconductor Optical Device O-MEMS
l Tunable Laser
l Tunable Detector
l Modeling
l MEMS Systems Examples
l Summary
Page #
What is O-MEMS
STANFORD
l A Marriage of Three Technologies

l Optics
l Reflective
l Refractive
l Diffractive
l Waveguiding
l Semiconductor Devices
l Optoelectronic III-V Devices
l Si-CMOS Processing and Control Electronics
l Semiconductor Based Micromachining
l Lithography
l Deposition
l Epitaxy
l Etching
The Past Millennium

STANFORD
Palomar Telescope Tunable Laser
Optical Table
Page #
The New Millenium
STANFORD
NASA Space Telescope Monolithic

Tunable
Laser
4.3 m
Semiconductor
Active Edge-Emitting Laser
Laser Stripe
Pre-aligned
Micro-Fresnel
Lens
Optical
Table
3D Structures
Pre-aligned to the Lens
Integration
System on a chip
STANFORD
Laser-to-fiber coupling
Micropositioners for mirrors

and gratings
High-resolution raster scanner
Page #
The Major Driving Force:
Communications Link Capacity
STANFORD
Advantages of O-MEMS
A Marriage of Technologies
STANFORD
l Small force required - Photons have zero mass

l Very small displacements required - /4
l Precision displacement possible
l Based upon compatible semiconductor processing
l Mass, low cost production
l Added functionality thru integration
l Reduced size, weight, and cost
l Physically robust
l Reduced physical alignment - Photolithography
l High resonant frequencies
l Speed of light (no RC limitation)
Page #
O-MEMS: an Enabling Technology
STANFORD
l Communications: Fiber Switches. Femtosecond Lasers,

Pulse Shaping, Modulators, Tunable Optical Devices
l Optical Interconnects
l Optical Data Storage
l Displays: Projection, Head Mounted - Virtual Reality
l Repro-graphics: Printing, Scanners

l Adaptive Optics
l Optical Transducers and Sensors
l Optical Spectroscopy and Instrumentation
Fundamental Optical Functions

STANFORD
Reflection Refraction Diffraction
Guiding
Page #
Active Device Functions
STANFORD
Generation Modulation Detection

Laser Mach-Zehnder Photodiode
O-MEMS Active Devices

STANFORD
Generation Modulation Detection

VCSELs QCSE Modulator Photodiode
All Active Devices are Surface Normal

Page #
Technologically Available
Optoelectronic Materials
STANFORD
AlN
6.0 (.21 m)
4.0 (.31 m)
ZnS
Bandgap energy (eV)
GaN MgSe
(.41 m)
Visible ZnSe
3.0 Spectrum
SiC AlP CdS ZnTe
AlAs
2.0 (.62 m) GaP CdSeAlSb
InN CdTe
GaAs InP
1.0 (1.24 m)
Si
SLE BULK
Ge GaSb
(Ge) InAs InSb
3.0 3.2 3.4 5.4 5.6 5.8 6.0 6.2 6.4

Lattice Constant ()
Optical Communications
Material Choices
STANFORD
2.5
AlAs
2
InxAl1-xAs
AlxGa1-xAs
Bandgap (eV)
1.5
GaAs InP
980nm
InxGa1-xAs
1 InxGa1-xAsyP1-y
1300nm
1550nm
0.5 GaNyAs1-y
GaxIn1-xNyAs1-y InAs
on GaAs InNyAs1-y
0
5.4 5.5 5.6 5.7 5.8 5.9 6 6.1 6.2
Lattice Parameter ()
GaNAs and GaInNAs have large bandgap bowing
Long wavelength material lattice matched to GaAs
Page #
Page #
Surface Micromachining
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PolySi
Nitride
Oxide
Slider Hinge V-groove for

Mirror alignment
Principle of Operation
STANFORD
l Coupled Cavity: Air Gap + Semiconductor Cavity
d
d0 d V
2
W 1 2 0AV
F= = CV =
z z 2 2d 2
l Electrostatic Force from applied voltage

l Balance between electrostatic and
elastic restoring force: d ~ V2/d2
l Effective cavity length: / 0 = d/d0
l Light emission restricted to cavity modes
Page #
Design Issues: Mechanical
Actuation Limit
STANFORD
V =V
3 crit
V
4
Electrostatic V
2 V
Force 1
(dotted)
Force
Increasing
Elastic
Voltage restoring
force
(solid)
0 Membrane Displacement d d0
l Nonlinear nature of Electrostatic Force
l Stable solutions: displacement less than ~Lg0 / 3

MIRRORS
STANFORD
Texas Instruments DMD
NASA's Next Generation Space

Telescope (2008) with 4M
micromirrors by Sandia NL
Lucents Optical X-Connect
Page #
Electrostatic-combdrive
STANFORD
Folded beams (movable

comb suspension)
Electric field distribution

Ground in comb-finger gaps
Comb Anchors
plate
drive
actuators Electrostatic
Combdrives
STANFORD
Springs
Fiber grooves or
channels
manipulator
comb drives
Bryant Hichwa etal, OCLI/JDS Uniphase, A Unique Latching 2x2 MEMS Fiber
Optics Switch, Optical MEMS 2000, Kauai, August 21-24 th, 2000.
Page #
Wavelength Switching Speed
STANFORD
Wafer 3976R2.1: 20 m Square Membrane
l Bias conditions:
-10V DC / 5
0V DC l Constant 10mA Diode Current
10 s l Membrane driven by square
5 s
pulse, 500ns to 10 s variable
Intensity (a.u.)
pulse width, 10V Amplitude,

4 s
20% duty cycle
3 s
2 s l Time-averaged Spectrum:
1 s l 90% of average shift in 1 s
500 ns
950 955 960 965 970 975 980 985 990

Wavelength (nm)
Micromirror Reliability
STANFORD
Angle (degrees)
x 10-3 Off position

1
0.5
0
-0.5
-1 0 10 20 30 40 50 60 70 80
Change in Res. Frequency
measurement # 2.00%
1.50%
1.00%
0.50%
0.00%
-0.50%
1.E+04 1.E+06 1.E+08 1.E+10

O-MEMS APS Short Course 3/11/01
# of Cycles JSH-24 24
Page #
Outline
STANFORD
l Overview
l Advantages
l Fundamentals
l Mechanical O-MEMS
Optical Communications Network Switches
l
Optical Bench
l
l Displays
l Torsional Mirror
l Tunable Laser
l Tunable Detector
l Modeling
l Summary
WDM Crossbar Switch

STANFORD
Input
Ports 1OXC
2OXC

1
2

OXC
M Output
N Ports
Optical 1
DMUX 2

N
Optical
MUX
Architecture of WDM Switch
The optical input signals are demultiplexed, and each wavelength
is routed to an independent NxN spatial cross-connect
Page #
O-MEMS Modulation Means
STANFORD
Properties of Light:
l Intensity, Wavelength, Polarization, and Phase
Each of these can be modulated, although intensity is the
most common mode
Modulation Means:
l Linear Motion
l Deflection
l Reflection
l Diffraction
l Interference
2 x 2 fiber-optic switch
STANFORD
Out 2 Compact design

One-mask fabrication
using DRIE on SOI
Out 1
Integration of fibers,
In 1 lenses, and
micromirrors
In 2 2 by 1 operation
By-pass switch
AT&T, JDSU.......
Page #
1 x 2 Matrix Switch
STANFORD
MEMS-based OXC switches

STANFORD
2X2 Fiber-optic switch 1 8x8 Fiber-optic switch 2
Some issues:
Switch scalability with minimum insertion loss
Large device count
Non-standard fabrication processes
Actuator reliability problems
1 C. Marxer, N.F. de Rooij, Jrnl of Lightwave Tech., Vol. 17, No. 1, Jan 1999
2 L.Y. Lin, E.L. Goldstein, R.W. Tkach, Jrnl of selected topics in Quantum Electronics, Vol. 5, No. 1, Jan 1999
Page #
NxN Matrix OXC
STANFORD
Simple 1 by 2
cross-points
Digital mirrors
N2 scaling
Large motion
Reliability??
OMM, Onix,
AT&T, Agilent.....
Beam Steering Optical Switch

STANFORD
Analog mirrors
s = N ?k 2 l 2N scaling
Accuracy?
Output Lucent, C-speed,
fiber Xros(NT),.....
array
Input
fiber
array
Page #
2x2 Beam Steering Switch*
STANFORD
Input
M1 Mirror
Input A
Array
Input B M2
Output A
M4
Output Output B
Mirror M3
Array
*P.M. Hagelin, U. Krishnamoorthy, et. al, paper published in Photonics Technology Letters, July 2000.
Silicon micromachined v-grooves

1.55 m diode laser source
Comb-drive actuated mirrors
Bulk optics for optical field scaling
-4.2 dB measured insertion loss
-54 dB measured cross-talk
Switching Characteristics
STANFORD
0
Power at 1550 nm [dB]
Transmitted Optical
-20
-40
Output A
-60 Output B
M1 M1 M1 M1
M2 M2 M2 M2
B B B B
M4 M4 M4
A A A M4 A
M3 M3
M3 M3
M1: 21.65V to 0V M1: 0V M1: 0 V M1: 0V to 22.24V
M3: 25.52V M3: 25.52Vto 0V M3: 0Vto 25.52V M3: 25.52V
Page #
DMD Light Switches
Mirror 10 deg
Mirror +10 deg
Hinge
CMOS
Yoke Substrate
Landing
Tip
DMD Optical Switching Principle
1
SEM Photomicrographs of DMD Chips
(a) (b)
(c) (d)
Grating Light Modulator

STANFORD
Beams up, reflection

Individual ribbons are
from 1 to 2 m wide and
Top electrode from 25 to 100 m long.
Silicon
Nitride
Beams down, diffraction
Silicon Substrate
Silicon
Dioxide Substrate electrode
Cross section
2
Grating Light Valve Projector
STANFORD
Micromachined Free-Space
Micro-Optical Bench (FS-MOB)
Semiconductor
Active Edge-Emitting Laser
Laser
Stripe Pre-aligned
Micro-Fresnel
Lens
3D Structures
Pre-aligned to the Lens
Active Opto Devices Micro-Actuators

Diffractive Optical
Elements
Micromachined FS-MOB
Refractive Optical Pre-Aligned and Micro-Positioners

Elements Monolithically Fabricated
M. C. Wu Integrated Photonic Laboratory
3
Out-of-Plane micro-Fresnel lens
l Low cost, batch processing technique to
fabricate free-space micro-optical system.
l All optical elements fabricated at the
same time by photolithography.
The optical system can be pre-aligned.
l Greatly reduce the size, weight, and
volume of free-space micro-optical
systems
Fabrication Processes :
Poly-1 Poly-2
PSG-2
PSG-1
Si or GaAs
Ref: Lin, Lee, Pister, and Wu, Electronics Letters, v.30, p.448, March 1994.
Micro-Fresnel Lens with Integrated

Scratch Drive Actuators (SDA)
Micro-Fresnel Lens
Translation Stage
Scratch Drive Actuators

(SDA)
Spring
4
Outline
STANFORD
l Overview
l Advantages
l Fundamentals
l Mechanical O-MEMS
l Optical Bench
l Displays
l Torsional Mirror

l Tunable Laser
l Tunable Detector
l Modeling
l Summary
Need for Tunable Devices

STANFORD
Wavelength division multiplexing (WDM):

tunable vertical cavity lasers
tunable photodiodes
tunable phototransistors
Optical Routing and Switching:
Beam steering
Spectroscopy:
Gas sensing
Laser spectroscopy
Cavity ring-down spectroscopy
Intracavity laser absorption spectroscopy
Adaptive Optics:
Tunable mirror arrays
Page #
Ar Ion Pumped Ti:Sapphire
Tunable Laser
STANFORD
Laser Background
STANFORD
Mirror 1 Mirror 2 l Laser: Gain + Feedback

L
Circ Wave
Inc
Gain Medium Trans (Mirrors)
(), g()
Refl
r1 r2
l Oscillation/Lasing
Pump
l Gain > Loss (internal + mirror)
l Resonance condition
2nL/c = 2m or nL = m/2
Page #
Laser Background
STANFORD
cavity l Resonance
ax
I circ c
m , where m = 1, 2, ...
nL
I inc
l Axial Mode Spacing
c
axial
nL

l Cavity Finesse
g rt axial
F
1 g rt cavity
Semiconductor Lasers:
In-Plane vs. Vertical-Cavity
STANFORD
In-Plane Edge-Emitting Laser Vertical-Cavity Surface-Emitting Laser
p AlGaAs Top DBR

cladding p AlGaAs
QW active cladding
region +
QW Active
n AlGaAs Region
cladding +
GaAs n AlGaAs
substrate cladding
GaAs
substrate Bottom DBR
l Cavity length ~ 100-400 m l Cavity length ( ) ~ 0.25 m

l High gain (2gL), low reflectance l Low gain (2gL), high reflectance
mirror is sufficient for lasing mirror (> 99%) needed for lasing
l Mirrors usually formed by cleaving l Mirrors are made of 1/4
~ 30% reflectance alternating low and high index
l Small emission aperature produces materials such as: AlAs/GaAs
highly astigmatic beam l Circular beam
Page #
Why Vertical Cavity Devices?
STANFORD
gain/transmission Long Cavity Short Cavity
gain/transmission
Cavity Mode Cavity Mode

axial ~ a few axial ~ 100 nm
Axial mode spacing is inversely proportional to cavity length: ax =

c/nL
Wide axial mode spacing in vertical cavities possibility for broad and
continuous wavelength tuning ( < axial, ~100 nm or ~10%)
Wavelength Tuning in VCSELs

STANFORD
R I
r1 Mirror 1
Top Distributed Ladj

Bragg Reflector
QW active region
Cavity Spacer Circulating

Wave
Pump L Lcavity
Gain
Bottom DBR (), g()
r2
GaAs substrate Mirror 2
T
Conventional VCSEL Tunable VCSEL
nL = m/2 nL + Ladj = m/2
Page #
Hybrid Dielectric DBR
Tunable VCSEL Structure
STANFORD
Membrane
Contact Pad
Spacer Layer
Deformable
Membrane
Top Mirror
p-contact
p-Contact Layer
Quantum Well Air Gap

Active Region
& Cavity Spacer
n-Distributed
Bragg Reflector
p-Contact Layer Anti-Reflective Coating
Dielectric Mirror Deposition &

Current Aperture Formation
STANFORD
l Grow epitaxial layers using MBE
l Deposit backside anti-reflective

coating & ohmic contact
l Deposit Si3N4 mechanical layer &
Si3N4/SiO2 dielectric DBR
l Pattern/Etch to high Al content
AlGaAs current confinement
layer
l Wet Thermal oxidation of AlGaAs
to form current aperture
Page #
Top Mirror Formation
STANFORD
l Pattern/Etch dielectric DBR to

form central reflector region
l Evaporate/Liftoff Ti-Au adhesion
layer
l Evaporate/Liftoff Au mirror layer
Intracavity Contact
STANFORD
l Plasma etch mechanical nitride

layer to form membrane
l Recess etch Al0.85Ga0.15 As
sacrificial layer
l Wet Etch sacrificial layer for

intracavity contact
l Evaporate/Liftoff Ti-Au
intracavity contact
Page #
Membrane Release
STANFORD
l Pattern photoresist for

membrane release
l Wet Etch membrane release
l Plasma removal of photoresist
SEM Images of
Tunable Structure
STANFORD
20-40 m diameter
membrane central reflector
Shadow indicates the full

releasing of the membrane.
4.3 m
85 X 5 m membrane legs
Oxidized current
aperture
Page #
Semiconductor Coupled Cavity:
1.5 Pair Dielectric DBR
STANFORD
5 5
Structure
1500 Au
1.5 pairs dielectric mirror 4 4
/4 GaAs
Air Gap
Power (W)
Voltage (V)
~3/4 + 3 3
GaAs 2 Cavity
Oxidized AlAs current aperture
2-60 InGaAs QWs 2 2
22.5 Period 1 1
GaAs/AlAs
/4 DBR
0 0
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
Current (mA)
l SiO2/Si3N4/SiO2 stress-matched 1.5 pair dielectric DBR

l 99.91% calculated top mirror reflectivity
l Typical device Ith ~ 0.35-0.7mA, Quantum efficiency ~ 6.5%
Semiconductor Coupled Cavity:

1.5 Pair Dielectric DBR
STANFORD
0.5 970
13.4V 9.4V 0 V
17.2V 15.4V
RT 11.4V 5.4V
0.5mA CW 16.4V 7.4V
0.4 965
17.5V
Wavelength (nm)
Intensity (a.u.)
0.3 17.6V 960
0.2 17.7V 955
0.1 950
17.8V
0 945
9500 9550 9600 9650 9700 0 4 8 12 16
Wavelength () Voltage (V)
l 19.1 nm continuous tuning for 17.8 V membrane bias
l 24 dB mode suppression ratio
Page #
VCSEL Wavelength Tuning
Transient Response
STANFORD
l Wavelength switching from 977.6 nm to 977.0 nm

l < 1 sec rise time, ~ 2 sec settling time
2
Tuning Voltage
0
-2
Signal (a.u.)
Voltage (V)
-4
977.6 nm -6
-8
-10
977.0 nm -12
-14
-4 -2 0 2 4 6
Time (sec)
Resonant Cavity Photodetection

STANFORD
h
Top DBR 1
(R1) R 1 = 0.8 R 1 = 0.2
p contact
R 2 = 0.99
0.8
Quantum Efficiency ( )
R 1 = 0.4
QW absorbing
layers 0.6
Circulating 0.4
wave R 1 = 0.8
Bottom DBR
(R2) 0.2
R 2 = 0.9
n contact
0
0.01 0.1 1 10
Absorption ( d)
l Quantum Efficiency
(1+ R2 e d ) d
=
d 2 (1 R1 )(1 e )
max

(1 R R
1 2 e )
(Kishino, 1991)
Page #
Tunable PIN Photodiode
STANFORD
5 10 -6
1.5 Volt
Normalized Photoresponse (A.U.)

7.5 Volt
11.5 Volt
4 10 -6
Reverse Bias The Tunable 16.5 Volt
Laser (PIN diode) 3 10 -6

Narrow Linewidth
(below 4nm) 2 10 -6
Tuning Range: 28.5 nm
1 10 -6
0
920 930 940 950 960 970 980 990
Wavelength (nm)
Mirror Curvature
STANFORD
MUMPS Poly2
l 2-D Interferometry
l Optical far-field
measurements
Static deformation 1.2 m
Page #
New AlOx/GaAs
Top Membrane Structure
STANFORD
GaAs/AlOx DBR
Si3N4/Gold/Ti/GaAs
Supporting Legs
Silicon nitride
Gold
n+ GaAs Substrate GaAs DBR
Tuning Contact Air Gap
AlOx/GaAs: higher index contrast ratio, fewer DBR mirror pairs

Independent leg thickness enables stress and deflection optimization.
One-Dimensional Model of
Movable Membrane
STANFORD
One-Dimensional Model: Four springs with Hooks constant keff

attached to central reflector
The balance of forces: Electrostatic force contributed from
central plate and four legs is equal to the effective spring force
Describe the system accurately without loss of physical meaning
Page #
Optical Properties of the cavity
STANFORD
Modeling of O-MEMS
devices is virtually non-
existant: serious design
limitation
Surface deformation
scatters light out of the
cavity
Cavity loss increases
linewidth
Two top membrane
designs compared using
Fox & Li method
Optical Field Distribution

STANFORD
Fox & Li method used to

simulate a plane wave
Normalized Field Pattern (A.U.)
bouncing between two 0.9

1
mirrors. 0.8
Examples 0.7
0.6
Tilted but flat surface 0.5
0.4
Symmetrically bent surface 0.3
Result: 0.2
0.1
-10 -5 0 5 10
Tilted: the mode shifts
Radial Distance (mm)
Symmetrical: the mode
intensity decreases in center,
but increases at edges--leads
to multi-mode lasing
Page #
Outline
STANFORD
l Overview
l Advantages
l Fundamentals
l Mechanical O-MEMS
l Optical Bench
l Displays
l Torsional Mirror

l Tunable Laser
l Tunable Detector
l Modeling
l Summary
2D Scanning Microlens with

Integrated Microactuators and
Hybrid-Integrated VCSEL
Integrated Raised
3D Optics Microlens
Actuator
Emitting
Spot
VCSEL
Si Free-Space
Micro-Optical Bench Hybrid-Integrated
Vertical Cavity
Surface-Emitting Laser
Page #
Integrated Michelson
Interferometer
Measure displacement and
Movement direction of external
Object with high resolution
Integrated Interferometer
Page #
Displacement Sensor Performance
System resolution < 20nm
Micro Bio-Assay System

STANFORD
Page #
Micro Bio-Assay System
STANFORD
Micro Fluidic Chamber Micro Lens Array
Cavity Ring Down Spectroscopy

STANFORD
Absorption spectroscopy for detection of low levels of species
Tunable Coupling
Laser Optics
Detector Sample
Ring-down Cavity
Iout B
A
A
B
Time
Page #
O-MEMS is an Enabling
Technology for the New Millennium
STANFORD
l Communications: Fiber Switches. Femtosecond Lasers,

Pulse Shaping, Modulators, Tunable Optical Devices
l Optical Interconnects
l Optical Data Storage
l Displays: Projection, Head Mounted - Virtual Reality
l Repro-graphics: Printing, Scanners

l Adaptive Optics
l Optical Transducers and Sensors
l Optical Spectroscopy and Instrumentation
Where To Find Information?

STANFORD
O-MEMS WWW Web Sites

l http://snowmass.stanford.edu/
Tunable Filters, Photodetectors and Lasers:
l http://www.htc.honeywell.com/cap/sensors/sensors.html
fiber-optic and sensors
l http://www.sandia.gov/LabNews/LN09-15-95/microengine.html
Microengines
l http://www.janet.ucla.edu/dmsr.index.html
Micromachined optical bench
l http://eto.sysplan.com/ETO/MEMS/Prog_Summaries/steering.html
DARPA ETO Electromagnetic/Optical Beam Steering program
l http://www.ti.com/dlp/docs/papers/mems/0memsab.htm
TI's Digital Mirror Devices
l http://www1.psi.ch/www_f3b_hn/home.html
Interferometer
l http://dmtwww.epfl.ch/ims/www.html
MEMS WWW sites around the world
Page #

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STANFORD

O-MEMS APS Short Course 3/11/01 JSH-1 1

O-MEMS APS Short Course 3/11/01 JSH-2 2

l A Marriage of Three Technologies

O-MEMS APS Short Course 3/11/01 JSH-3 3

The Past Millennium

Palomar Telescope Tunable Laser

O-MEMS APS Short Course 3/11/01 JSH-4 4

NASA Space Telescope Monolithic

O-MEMS APS Short Course 3/11/01 JSH-5 5

Micropositioners for mirrors

High-resolution raster scanner

O-MEMS APS Short Course 3/11/01 JSH-6 6

O-MEMS APS Short Course 3/11/01 JSH-7 7

l Small force required - Photons have zero mass

O-MEMS APS Short Course 3/11/01 JSH-8 8

l Communications: Fiber Switches. Femtosecond Lasers,

l Optical Data Storage

l Displays: Projection, Head Mounted - Virtual Reality

l Repro-graphics: Printing, Scanners

l Optical Transducers and Sensors

l Optical Spectroscopy and Instrumentation

O-MEMS APS Short Course 3/11/01 JSH-9 9

Fundamental Optical Functions

Reflection Refraction Diffraction

O-MEMS APS Short Course 3/11/01 JSH-10 10

Generation Modulation Detection

O-MEMS APS Short Course 3/11/01 JSH-11 11

O-MEMS Active Devices

Generation Modulation Detection

All Active Devices are Surface Normal

3.0 3.2 3.4 5.4 5.6 5.8 6.0 6.2 6.4

O-MEMS APS Short Course 3/11/01 JSH-13 13

Slider Hinge V-groove for

O-MEMS APS Short Course 3/11/01 JSH-17 17

l Coupled Cavity: Air Gap + Semiconductor Cavity

l Electrostatic Force from applied voltage

O-MEMS APS Short Course 3/11/01 JSH-18 18

l Nonlinear nature of Electrostatic Force

l Stable solutions: displacement less than ~Lg0 / 3

Texas Instruments DMD

NASA's Next Generation Space

O-MEMS APS Short Course 3/11/01 JSH-20 20

Folded beams (movable

Electric field distribution

O-MEMS APS Short Course 3/11/01 JSH-22 22

pulse width, 10V Amplitude,

950 955 960 965 970 975 980 985 990

O-MEMS APS Short Course 3/11/01 JSH-23 23

x 10-3 Off position

1.E+04 1.E+06 1.E+08 1.E+10

O-MEMS APS Short Course 3/11/01 JSH-25 25

WDM Crossbar Switch

O-MEMS APS Short Course 3/11/01 JSH-26 26

O-MEMS APS Short Course 3/11/01 JSH-27 27

Out 2 Compact design

O-MEMS APS Short Course 3/11/01 JSH-28 28

O-MEMS APS Short Course 3/11/01 JSH-29 29

MEMS-based OXC switches

2X2 Fiber-optic switch 1 8x8 Fiber-optic switch 2

O-MEMS APS Short Course 3/11/01 JSH-30 30

O-MEMS APS Short Course 3/11/01 JSH-31 31

Beam Steering Optical Switch

O-MEMS APS Short Course 3/11/01 JSH-32 32