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Engineering College
Electrical Department
First Year
Principles of Electronics
Chapter Two
By: Hemin Ali Qadir
2016
OUTLINES
Part I:
Diode Operation
The Diode
Diode Biasing
Forward biasing
Reverse biasing
THE DIODE
Surface-Mount Diode
Typical Diode Packages Packages
DIODE BIASING
Biasing refers to the use of an external voltage to cause
the diode to conduct current in one direction and block
it in the other direction.
There are two bias conditions:
Forward Biasing
Reverse Biasing
FORWARD BIAS
Forward bias is the condition that
allows current through the pn
junction.
There are two requirements for
forward bias
First: The negative side of VBIAS is
connected to the n region of the
diode and the positive side is
connected to the p region.
Second: the bias voltage, VBIAS,
must be greater than the barrier
potential.
FORWARD BIAS
The negative side of the bias-voltage source pushes the free
electrons of n region toward the pn junction.
The negative side of the source also provides a continuous flow of
electrons from the conductor (wires) into the n region.
This flow of free electrons is called electron current.
FORWARD BIAS
The bias-voltage gives sufficient energy to the free electrons to
overcome the barrier potential of the depletion region and move
into the p region.
These electrons loss their energy immediately after they pass the
depletion reign. and recombine with holes.
In the p region, these electrons will recombine with holes and will
become valence electrons (not free).
FORWARD BIAS
The positive side of the bias-voltage attracts the valence electrons
toward the left end of the p region.
The holes in the p region provide the medium or pathway for these
valence electrons to move through the p region.
The valence electrons move from one hole to the next toward the left.
The holes, which are the majority carriers in the P region, effectively (not
actually) move to the right toward the junction.
This effective flow of holes is called the hole current.
The Effect of Forward Bias on the Depletion Region
As more electrons flow into the depletion region, the number of
positive ions is reduced.
As more holes effectively flow into the depletion region on the
other side of the pn junction, the number of negative ions
is reduced.
This reduction in positive and negative ions during forward bias
causes the depletion region to narrow
The Effect of the Barrier Potential During Forward Bias
This energy loss results in a voltage drop across the pn junction equal
to the barrier potential (0.7 V for silicon) (0.3 V for germanium) .
REVERSE BIAS
Reverse bias is the condition that essentially prevents current
through the diode.
The small number of free minority electrons in the p region are pushed
toward the pn junction by the negative bias voltage.
When these electrons pass depletion region, they combine with the
minority holes in the n region as valence electrons and flow toward
the positive bias voltage, creating a small hole current.
Reverse Breakdown
Normally, the reverse current is so small, and it can be neglected.
= / 1
Where:
Example:
Determine the dc resistance levels
for the diode of Figure shown at
1. ID =2 mA
2. ID = 20 mA
3. VD = -10 V
Resistance Levels
AC or Dynamic Resistance
If a sinusoidal voltage is applied, the
diode resistance is changing.
This resistance is called dynamic or ac
resistance.
lowercase italic r with a prime is used for
internal resistances of electronics
devices.
the diode ac resistance can be
calculated by;
=
Defining the dynamic or
ac resistance.
Were is the internal ac resistance
Resistance Levels
AC or Dynamic Resistance
The ac resistance in the vertical-rise
region of the characteristic is quite
small.
But it is much higher at low current
levels.
Example:
For the characteristics of this figure:
1. Determine the ac resistance
at ID =2 mA.
2. Determine the ac resistance
at ID = 25 mA.
3. Compare the results
of parts (a) and (b) to
the dc resistances
at each current level.
OUTLINES
Part IV:
Voltage-Current (V-I) Characteristic of the Diode
Diode Models
Load Line Analysis
Diode Models
Bias Connections
Forward-Bias
The forward current (IF) is from anode to
cathode.
The forward voltage drop (VF) due to the
barrier potential.
Reverse-Bias
The reverse current is extremely small
and can be considered to be zero.
Notice that the entire bias voltage
(VBIAS) appears across the diode.
Diode Models
Diode Approximations
The Ideal Diode Model
The ideal model of a diode is the least accurate approximation.
In ideal case, the diode is considered as a simple switch.
When the diode is forward-biased, it ideally acts like a closed (on) switch.
Diode Models
Diode Approximations
The Ideal Diode Model
When the diode is reverse-biased, it ideally acts like an open (off)
switch.
the barrier potential, the dynamic resistance, and the reverse current
are all neglected.
Diode Models
Diode Approximations
The Practical Diode Model
The practical model includes the barrier potential.
The intersection of the load line with the characteristics will determine
the point of operation of the system.
If we set ID = 0 A in the load-line and solve for VD, we have the magnitude
of VD on the horizontal axis.
Load Line Analysis
We now have a load line defined by the network and a characteristic
curve defined by the device.
The point of intersection between the two is the point of operation for this
circuit .
The point of operation is usually called the quiescent point (Q-point)
Load Line Analysis
Example
For the series diode configuration of Fig. (a) employing the diode
characteristics of Fig. (b) determine:
1. VDQ and IDQ.
2. RD
3. VR
Load Line Analysis
Homework:
Repeat the analysis of the pervious example with R = 1.5 K