IRFB3206 Mosfet 30A Solar Charge Controller

IRFB3206PbF
IRFS3206PbF
IRFSL3206PbF
Applications HEXFET Power MOSFET
l High Efficiency Synchronous Rectification VDSS
D 60V
2.4m:
in SMPS
l Uninterruptible Power Supply
RDS(on) typ.
l High Speed Power Switching max. 3.0m:
l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 210A c
Benefits S ID (Package Limited) 120A
l Improved Gate, Avalanche and Dynamic
D
dV/dt Ruggedness D D
l Fully Characterized Capacitance and
Avalanche SOA
S S S
l Enhanced body diode dV/dt and dI/dt Capability D D D
G G G
l Lead-Free
l RoHS Compliant, Halogen-Free TO-220AB D2Pak TO-262
IRFB3206PbF IRFS3206PbF IRFSL3206PbF
G D S
Gate Drain Source
Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
IRFB3206PbF TO-220 Tube 50 IRFB3206PbF
IRFSL3206PbF TO-262 Tube 50 IRFSL3206PbF
Tube 50 IRFS3206PbF
IRFS3206PbF D2Pak Tape and Reel Left 800 IRFS3206TRLPbF
Tape and Reel Right 800 IRFS3206TRRPbF
Absolute Maximum Ratings

Symbol Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 210c
ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 150c
A
ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120
IDM Pulsed Drain Current d 840
PD @TC = 25C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 W/C
VGS Gate-to-Source Voltage 20 V
dv/dt Peak Diode Recovery f 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw x
10lb in (1.1N m) x
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy e 170 mJ
IAR Avalanche Current d See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy g mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case k 0.50
RCS Case-to-Sink, Flat Greased Surface , TO-220 0.50
RJA Junction-to-Ambient, TO-220 k 62
C/W
RJA Junction-to-Ambient (PCB Mount) , D2 Pak jk 40
1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
Static @ TJ = 25C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, ID = 5mA d
RDS(on) Static Drain-to-Source On-Resistance 2.4 3.0 m VGS = 10V, ID = 75A g
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 150A
IDSS Drain-to-Source Leakage Current 20 A VDS =60V, VGS = 0V
250 VDS = 48V, VGS = 0V, TJ = 125C
IGSS Gate-to-Source Forward Leakage 100 nA VGS = 20V
Gate-to-Source Reverse Leakage -100 VGS = -20V
RG Internal Gate Resistance 0.7
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Forward Transconductance 210 S VDS = 50V, ID = 75A
Qg Total Gate Charge 120 170 nC ID = 75A
Qgs Gate-to-Source Charge 29 VDS =30V
Qgd Gate-to-Drain ("Miller") Charge 35 VGS = 10V g
Qsync Total Gate Charge Sync. (Qg - Qgd) 85 ID = 75A, VDS =0V, VGS = 10V
td(on) Turn-On Delay Time 19 ns VDD = 30V
tr Rise Time 82 ID = 75A
td(off) Turn-Off Delay Time 55 RG =2.7
tf Fall Time 83 VGS = 10V g
Ciss Input Capacitance 6540 pF VGS = 0V
Coss Output Capacitance 720 VDS = 50V
Crss Reverse Transfer Capacitance 360 = 1.0MHz, See Fig.5
Coss eff. (ER) Effective Output Capacitance (Energy Related) 1040 VGS = 0V, VDS = 0V to 48V i, See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related) h 1230 VGS = 0V, VDS = 0V to 48V h
Diode Characteristics
IS Continuous Source Current 210 c A MOSFET symbol D
(Body Diode) showing the

ISM Pulsed Source Current 840 A integral reverse G
(Body Diode) d p-n junction diode.

S
VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 75A, VGS = 0V g

trr Reverse Recovery Time 33 50 ns TJ = 25C VR = 51V,
37 56 TJ = 125C IF = 75A
Qrr Reverse Recovery Charge 41 62 nC TJ = 25C di/dt = 100A/s g
53 80 TJ = 125C
IRRM Reverse Recovery Current 2.1 A TJ = 25C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction ISD 75A, di/dt 360A/s, VDD V(BR)DSS, TJ 175C.
temperature. Bond wire current limit is 120A. Note that current Pulse width 400s; duty cycle 2%.
limitations arising from heating of the device leads may occur with Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. as Coss while VDS is rising from 0 to 80% VDSS .
Repetitive rating; pulse width limited by max. junction Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature. Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax, starting TJ = 25C, L = 0.023mH When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25, IAS = 120A, VGS =10V. Part not recommended for use mended footprint and soldering techniques refer to application note #AN-994.
above this value. R is measured at TJ approximately 90C
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)

8.0V 8.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
4.8V 4.8V
BOTTOM 4.5V BOTTOM 4.5V
100 100
4.5V
4.5V 60s PULSE WIDTH 60s PULSE WIDTH

Tj = 25C Tj = 175C
10 10
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.5
ID = 75A
RDS(on) , Drain-to-Source On Resistance

VGS = 10V
ID, Drain-to-Source Current()
100 2.0
TJ = 175C
(Normalized)
10
1.5
TJ = 25C
1
1.0
VDS = 25V
60s PULSE WIDTH
0.1
2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature
12000 20
VGS = 0V, f = 1 MHZ ID= 75A
Ciss = Cgs + Cgd, Cds SHORTED
VDS = 48V
VGS, Gate-to-Source Voltage (V)
10000 Crss = Cgd

16 VDS= 30V
Coss = Cds + Cgd
VDS= 12V
C, Capacitance (pF)
8000
Ciss 12
6000
8
4000
4
2000 Coss
Crss 0
0
0 40 80 120 160 200
1 10 100
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000 10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)

ISD, Reverse Drain Current (A)
1000
TJ = 175C
100
1msec 100sec
100
10
TJ = 25C
10msec
10
1
1 Tc = 25C
Tj = 175C DC
VGS = 0V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100
VSD , Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage

240 80
ID = 5mA
200 Limited By Package
75
ID, Drain Current (A)
160
70
120
65
80
60
40
0 55
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
T C , Case Temperature (C) TJ , Junction Temperature (C)

Fig 9. Maximum Drain Current vs. Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
2.0 800
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP 21A
33A
1.5 600 BOTTOM 120A
Energy (J)
1.0 400
0.5 200
0.0 0
0 10 20 30 40 50 60 25 50 75 100 125 150 175
VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (C)
Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
Thermal Response ( ZthJC ) D = 0.50
0.1 0.20
0.10
0.05
0.02
R1
R1
R2
R2
R3
R3 Ri (C/W) (sec)
0.01 J C
0.01
J
1
0.106416 0.0001
2 3
1 2 3
0.201878 0.001262
Ci= i/Ri
Ci= i/Ri 0.190923 0.011922
SINGLE PULSE
0.001 ( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000
Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150C and
Avalanche Current (A)
100 Tstart =25C (Single Pulse)

0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming j = 25C and
Tstart = 150C.
1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth

200 Notes on Repetitive Avalanche Curves , Figures 14, 15:
TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:
ID = 120A
EAR , Avalanche Energy (mJ)
160 Purely a thermal phenomenon and failure occurs at a temperature far in

excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
120
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
80 6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25C in Figure 14, 15).
40 tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175 PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC
Iav = 2DT/ [1.3BVZth]
Starting TJ , Junction Temperature (C)
EAS (AR) = PD (ave)tav
Fig 15. Maximum Avalanche Energy vs. Temperature
4.5 18
ID = 1.0A
16
VGS(th) Gate threshold Voltage (V)
4.0 ID = 1.0mA
ID = 250A 14
3.5
ID = 150A
12
IRRM - (A)
3.0
10
2.5 8
6
2.0 IF = 30A
4 VR = 51V
1.5 TJ = 125C
2
TJ = 25C
1.0 0
-75 -50 -25 0 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 900 1000
TJ , Temperature ( C ) dif / dt - (A / s)
Fig 16. Threshold Voltage Vs. Temperature Fig. 17 - Typical Recovery Current vs. dif/dt
18 350
16
300
14
250
12
QRR - (nC)
IRRM - (A)
10 200
8 150
6
IF = 45A 100 IF = 30A
4 VR = 51V VR = 51V
TJ = 125C 50 TJ = 125C
2
TJ = 25C TJ = 25C
0 0
100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s) dif / dt - (A / s)
Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt
350
300
250
QRR - (nC)
200
150
100 IF = 45A
VR = 51V
50 TJ = 125C
TJ = 25C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s)
Fig. 20 - Typical Stored Charge vs. dif/dt

Driver Gate Drive

P.W.
D.U.T P.W.
Period D=
Period
+
VGS=10V*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
- Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
RG dv/dt controlled by RG VDD Re-Applied

Driver same type as D.U.T. + Voltage Body Diode Forward Drop
I SD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
D.U.T. - Device Under Test
Ripple 5% ISD
* VGS = 5V for Logic Level Devices

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
V(BR)DSS
15V
tp
L DRIVER
VDS
RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01
I AS
Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms
LD
VDS VDS
90%
+
VDD -
D.U.T 10%
VGS VGS
Pulse Width < 1s
Duty Factor < 0.1% td(on) tr td(off) tf
Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
Current Regulator Id
Same Type as D.U.T. Vds
Vgs
50K
12V .2F
.3F
+
V
D.U.T. - DS
Vgs(th)
VGS
3mA
IG ID
Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr
Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
TO-220AB Package Outline

Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
INTERNATIONAL PART NUMBER INTERNATIONAL PART NUMBER

RECTIFIER LOGO RECTIFIER LOGO
ASSEMBLY
IRFB3206
PYWW?
DATE CODE
P = LEAD-FREE
OR ASSEMBLY
IRFB3206
YWWP
DATE CODE
Y = LAST DIGIT OF YEAR
LOT CODE Y = LAST DIGIT OF YEAR LOT CODE WW = WORK WEEK
LC LC WW = WORK WEEK LC LC P = LEAD-FREE
? = ASSEMBLY SITE CODE
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
INTERNATIONAL INTERNATIONAL
RECTIFIER LOGO PART NUMBER RECTIFIER LOGO PART NUMBER
ASSEMBLY
IRFS3206
PYWW?
OR ASSEMBLY
IRFS3206
YWWP
LOT CODE DATE CODE LOT CODE DATE CODE
LC LC P = LEAD-FREE LC LC Y = LAST DIGIT OF YEAR
Y = LAST DIGIT OF YEAR WW = WORK WEEK
WW = WORK WEEK P = LEAD-FREE
TO-262 Package Outline (Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
INTERNATIONAL PART NUMBER INTERNATIONAL PART NUMBER

RECTIFIER LOGO FSL3206
OR RECTIFIER LOGO FSL3206
ASSEMBLY PYWW? ASSEMBLY YWWP
DATE CODE DATE CODE
LOT CODE LOT CODE Y = LAST DIGIT OF YEAR
P = LEAD-FREE
LC LC Y = LAST DIGIT OF YEAR LC LC WW = WORK WEEK
WW = WORK WEEK P = LEAD-FREE
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059) 0.368 (.0145)
3.90 (.153)
0.342 (.0135)
FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)
FEED DIRECTION
13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)
330.00 60.00 (2.362)

(14.173) MIN.
MAX.
30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Qualification information
Industrial
Qualification level
(per JEDEC JESD47F guidelines)
TO-220 N/A
Moisture Sensitivity Level D2Pak
MS L1
TO-262
RoHS compliant Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

Applicable version of JEDEC standard at the time of product release.
Revision History
Date Comment
Updated data sheet with new IR corporate template.
4/24/2014 Updated package outline & part marking on page 8, 9 & 10.
Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

IRFB3206 Mosfet 30A Solar Charge Controller

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IRFB3206 Mosfet 30A Solar Charge Controller

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IRFB3206PbF

Absolute Maximum Ratings

RJA Junction-to-Ambient (PCB Mount) , D2 Pak jk 40

Static @ TJ = 25C (unless otherwise specified)

(Body Diode) showing the

(Body Diode) d p-n junction diode.

VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 75A, VGS = 0V g

ID, Drain-to-Source Current (A)

4.5V 60s PULSE WIDTH 60s PULSE WIDTH

VDS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

RDS(on) , Drain-to-Source On Resistance

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

10000 Crss = Cgd

ID, Drain-to-Source Current (A)

VSD , Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

V(BR)DSS , Drain-to-Source Breakdown Voltage

T C , Case Temperature (C) TJ , Junction Temperature (C)

VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (C)

Thermal Response ( ZthJC ) D = 0.50

t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche

100 Tstart =25C (Single Pulse)

Allowed avalanche Current vs avalanche

Fig 14. Typical Avalanche Current vs.Pulsewidth

160 Purely a thermal phenomenon and failure occurs at a temperature far in

Fig 15. Maximum Avalanche Energy vs. Temperature

Fig. 20 - Typical Stored Charge vs. dif/dt

Driver Gate Drive

RG dv/dt controlled by RG VDD Re-Applied

* VGS = 5V for Logic Level Devices

TO-220AB Package Outline

TO-220AB Part Marking Information

INTERNATIONAL PART NUMBER INTERNATIONAL PART NUMBER

TO-220AB packages are not recommended for Surface Mount Application.

D2Pak Package Outline (Dimensions are shown in millimeters (inches))

D2Pak Part Marking Information

TO-262 Package Outline (Dimensions are shown in millimeters (inches))

TO-262 Part Marking Information

INTERNATIONAL PART NUMBER INTERNATIONAL PART NUMBER

D2Pak Tape & Reel Information

FEED DIRECTION 1.85 (.073) 11.60 (.457)

13.50 (.532) 27.40 (1.079)

330.00 60.00 (2.362)

Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

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