IRFW640B / IRFI640B

November 2001

IRFW640B / IRFI640B
200V N-Channel MOSFET

General Description Features

These N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 V
transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)
planar, DMOS technology. Low Crss ( typical 45 pF)
This advanced technology has been especially tailored to Fast switching
minimize on-state resistance, provide superior switching 100% avalanche tested
performance, and withstand high energy pulse in the Improved dv/dt capability
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.

D D
!

G!

D2-PAK I2-PAK

G S
G D S
IRFW Series IRFI Series
!
S
Absolute Maximum Ratings TC = 25C unless otherwise noted

Symbol Parameter IRFW640B / IRFI640B Units

VDSS Drain-Source Voltage 200 V
ID Drain Current - Continuous (TC = 25C) 18 A
- Continuous (TC = 100C) 11.4 A
IDM Drain Current - Pulsed (Note 1) 72 A
VGSS Gate-Source Voltage 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ
IAR Avalanche Current (Note 1) 18 A
EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TA = 25C) * 3.13 W
Power Dissipation (TC = 25C) 139 W
- Derate above 25C 1.11 W/C
TJ, Tstg Operating and Storage Temperature Range -55 to +150 C
Maximum lead temperature for soldering purposes,
TL 300 C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ Max Units
RJC Thermal Resistance, Junction-to-Case -- 0.9 C/W
RJA Thermal Resistance, Junction-to-Ambient * -- 40 C/W
RJA Thermal Resistance, Junction-to-Ambient -- 62.5 C/W
* When mounted on the minimum pad size recommended (PCB Mount)

2001 Fairchild Semiconductor Corporation Rev. B, November 2001

 IRFW640B / IRFI640B
Electrical Characteristics TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 200 -- -- V
BVDSS Breakdown Voltage Temperature
ID = 250 A, Referenced to 25C -- 0.2 -- V/C
/ TJ Coefficient
IDSS VDS = 200 V, VGS = 0 V -- -- 10 A
Zero Gate Voltage Drain Current
VDS = 160 V, TC = 125C -- -- 100 A
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 9.0 A -- 0.145 0.18
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 9.0 A (Note 4) -- 13 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1300 1700 pF
Coss Output Capacitance f = 1.0 MHz -- 175 230 pF
Crss Reverse Transfer Capacitance -- 45 60 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 20 50 ns
VDD = 100 V, ID = 18 A,
tr Turn-On Rise Time -- 145 300 ns
RG = 25
td(off) Turn-Off Delay Time -- 145 300 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 110 230 ns
Qg Total Gate Charge VDS = 160 V, ID = 18 A, -- 45 58 nC
Qgs Gate-Source Charge VGS = 10 V -- 6.5 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 22 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 18 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 18 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 18 A, -- 195 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/s (Note 4)
-- 1.47 -- C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.16mH, IAS = 18A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 18A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

2001 Fairchild Semiconductor Corporation Rev. B, November 2001

 IRFW640B / IRFI640B
Typical Characteristics

VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
1
6.0 V 1
10 5.5 V 10
Bottom : 5.0 V

ID, Drain Current [A]

ID, Drain Current [A]

o
150 C

0 0 o
10 10 25 C

o
Notes : -55 C Notes :
1. 250 s Pulse Test 1. VDS = 40V
2. TC = 25 2. 250 s Pulse Test

-1 -1
10 10
10
-1
10
0
10
1 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

1.0

0.8
VGS = 10V
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

1
10
RDS(ON) [ ],

0.6 VGS = 20V

0.4
0
10

150 25
0.2 Notes :
1. VGS = 0V
Note : TJ = 25 2. 250 s Pulse Test

-1
0.0 10
0 10 20 30 40 50 60 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

3500 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd VDS = 40V
3000
10
VDS = 100V
VGS, Gate-Source Voltage [V]

2500 VDS = 160V

8
Ciss
Capacitance [pF]

2000
6
Coss
1500

4
1000 Crss Notes :
1. VGS = 0 V
2. f = 1 MHz
2
500
Note : ID = 18 A

0 0
-1 0 1 0 5 10 15 20 25 30 35 40 45 50
10 10 10
VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2001 Fairchild Semiconductor Corporation Rev. B, November 2001

 IRFW640B / IRFI640B
Typical Characteristics (Continued)

1.2 3.0

2.5
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
BV DSS , (Normalized)

RDS(ON) , (Normalized)
2.0

1.0 1.5

1.0

0.9 Notes :
1. VGS = 0 V
Notes :
2. ID = 250 A 0.5 1. VGS = 10 V
2. ID = 9.0 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

20
Operation in This Area
is Limited by R DS(on)
2
10
16

100 s
ID, Drain Current [A]

ID, Drain Current [A]

1 ms
12
1
10 10 ms
DC
8

0
10
Notes :
1. TC = 25 C
o 4
o
2. TJ = 150 C
3. Single Pulse

-1
10 0
0
10 10
1
10
2 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature []

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature
(t), T h e r m a l R e s p o n s e

0
10

D = 0 .5
N o te s :
1 . Z J C (t) = 0 .9 /W M a x .
0 .2
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)
10
-1
0 .1

0 .0 5

0 .0 2 PDM
JC

0 .0 1 t1
Z

s in g le p u ls e t2
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve

2001 Fairchild Semiconductor Corporation Rev. B, November 2001

 IRFW640B / IRFI640B
Gate Charge Test Circuit & Waveform

VGS
Same Type
50K
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

2001 Fairchild Semiconductor Corporation Rev. B, November 2001

 IRFW640B / IRFI640B
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS dv/dt controlled by RG

ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

2001 Fairchild Semiconductor Corporation Rev. B, November 2001

 IRFW640B / IRFI640B
Package Dimensions

D2-PAK
4.50 0.20
9.90 0.20
(0.40)

+0.10
1.30 0.05

1.20 0.20
9.20 0.20

2.00 0.10
15.30 0.30
1.40 0.20

0.10 0.15

2.54 0.30
2.40 0.20
4.90 0.20

(0.75)

~3
1.27 0.10 0.80 0.10 0
+0.10
2.54 TYP 2.54 TYP 0.50 0.05

10.00 0.20
(8.00)
(4.40)
(1.75)

10.00 0.20
(7.20)

9.20 0.20

(2XR0.45)
15.30 0.30

4.90 0.20

0.80 0.10

Dimensions in Millimeters

2001 Fairchild Semiconductor Corporation Rev. B, November 2001

 IRFW640B / IRFI640B
Package Dimensions (Continued)

I2-PAK
9.90 0.20 4.50 0.20
(0.40)

+0.10
1.30 0.05

1.20 0.20
9.20 0.20
MAX13.40
(1.46)

(4
5
)

MAX 3.00
(0.94)
13.08 0.20

10.08 0.20

1.27 0.10 1.47 0.10

0.80 0.10

+0.10
2.54 TYP 2.54 TYP 0.50 0.05 2.40 0.20

10.00 0.20

Dimensions in Millimeters

2001 Fairchild Semiconductor Corporation Rev. B, November 2001

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STAR*POWER is used under license

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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CORPORATION.
As used herein:
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when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2001 Fairchild Semiconductor Corporation Rev. H4

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