BLF 278

DISCRETE SEMICONDUCTORS
DATA SHEET
BLF278
VHF push-pull power MOS
transistor
Product Specification 1996 Oct 21
Supersedes data of October 1992
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
FEATURES PINNING - SOT262A1

High power gain PIN SYMBOL DESCRIPTION
Easy power control 1 d1 drain 1
Good thermal stability 2 d2 drain 2
Gold metallization ensures excellent reliability. 3 g1 gate 1
4 g2 gate 2
APPLICATIONS 5 s source
Broadcast transmitters in the VHF frequency range.
DESCRIPTION 1 2
d
Dual push-pull silicon N-channel enhancement mode
g
vertical D-MOS transistor encapsulated in a 4-lead, s
SOT262A1 balanced flange package with two ceramic g
caps. The mounting flange provides the common source 5 5 d
connection for the transistors. 3 4
Top view MAM098
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static Fig.1 Simplified outline and symbol.
discharge during transport or handling.
QUICK REFERENCE DATA

RF performance at Th = 25 C in a push-pull common source test circuit.
f VDS PL Gp D
MODE OF OPERATION
(MHz) (V) (W) (dB) (%)
CW, class-B 108 50 300 >20 >60
CW, class-C 108 50 300 typ. 18 typ. 80
CW, class-AB 225 50 250 >14 >50
typ. 16 typ. 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 21 2
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor section
VDS drain-source voltage 110 V
VGS gate-source voltage 20 V
ID drain current (DC) 18 A
Ptot total power dissipation up to Tmb = 25 C total device; 500 W
both sections equally loaded
Tstg storage temperature 65 150 C
Tj junction temperature 200 C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-mb thermal resistance from junction total device; both sections max. 0.35 K/W
to mounting base equally loaded.
Rth mb-h thermal resistance from total device; both sections max. 0.15 K/W
mounting base to heatsink equally loaded.
MRA988 MGE616
100 500
handbook, halfpage handbook, halfpage
Ptot
ID (W)
(A) 400
(2)
(1)
(1) (2) 300
10
200
100
1 0
1 10 100 500 0 40 80 120 160
VDS (V) Th (C)
Total device; both sections equally loaded. Total device; both sections equally loaded.
(1) Current is this area may be limited by RDSon. (1) Continuous operation.
(2) Tmb = 25 C. (2) Short-time operation during mismatch.
Fig.2 DC SOAR. Fig.3 Power derating curves.
1996 Oct 21 3
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor section
V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 50 mA 110 V
IDSS drain-source leakage current VGS = 0; VDS = 50 V 2.5 mA
IGSS gate-source leakage current VGS = 20 V; VDS = 0 1 A
VGSth gate-source threshold voltage VDS = 10 V; ID = 50 mA 2 4.5 V
VGS gate-source voltage difference VDS = 10 V; ID = 50 mA 100 mV
of both sections
gfs forward transconductance VDS = 10 V; ID = 5 A 4.5 6.2 S
gfs1/gfs2 forward transconductance ratio VDS = 10 V; ID = 5 A 0.9 1.1
of both sections
RDSon drain-source on-state resistance VGS = 10 V; ID = 5 A 0.2 0.3
IDSX drain cut-off current VGS = 10 V; VDS = 10 V 25 A
Cis input capacitance VGS = 0; VDS = 50 V; f = 1 MHz 480 pF
Cos output capacitance VGS = 0; VDS = 50 V; f = 1 MHz 190 pF
Crs feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz 14 pF
Cd-f drain-flange capacitance 5.4 pF
MGE623 MGE622
0 30
T.C.
(mV/K) ID
1 (A)
20
2
3
10
5 0
102 101 1 10 0 5 10 15
ID (A) VGS (V)
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical Fig.5 Drain current as a function of gate-source
values per section. voltage; typical values per section.
1996 Oct 21 4
MGE621 MGE615
400 1200
RDSon
(m) C
(pF)
300
800
200
Cis
400
100
Cos
0 0
0 50 100 150 0 20 40 60
Tj (C) VDS (V)
VGS = 10 V; ID = 5 A. VGS = 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a Fig.7 Input and output capacitance as functions
function of junction temperature; typical of drain-source voltage; typical values per
values per section. section.
MGE620
400
handbook, halfpage
Crs
(pF)
300
200
100
0
0 10 20 30 40 50
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values per
section.
1996 Oct 21 5
APPLICATION INFORMATION
Class-B operation
RF performance in CW operation in a common source push-pull test circuit. Th = 25 C; Rth mb-h = 0.15 K/W unless
otherwise specified. RGS = 4 per section; optimum load impedance per section = 3.2 + j4.3 (VDS = 50 V).
f VDS IDQ PL Gp D
MODE OF OPERATION
(MHz) (V) (A) (W) (dB) (%)
CW, class-B 108 50 2 0.1 300 >20 >60
typ. 22 typ. 70
CW, class-C 108 50 VGS = 0 300 typ. 18 typ. 80
Ruggedness in class-B operation

The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7 : 1 through all phases under the
conditions: VDS = 50 V; f = 108 MHz at rated load power.
1996 Oct 21 6
MGE682 MGE683
30 80
D
Gp
(%) (2)
(dB) (1) (1)
60
20
(2)
(1)
(2)
40
10
20
0 0
0 200 400 600 0 200 400 600
PL (W) PL (W)
Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; f = 108 MHz; Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; f = 108 MHz;
ZL = 3.2 + j4.3 (per section); RGS = 4 (per section). ZL = 3.2 + j4.3 (per section); RGS = 4 (per section).
(1) Th = 25 C. (1) Th = 25 C.
(2) Th = 70 C. (2) Th = 70 C.
Fig.9 Power gain as a function of load power, Fig.10 Efficiency as a function of load power,
typical values. typical values.
MGE684
600
handbook, halfpage
PL
(W)
(1)
400
(2)
200
0
0 5 10 15
Pi (W)
Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; f = 108 MHz;

ZL = 3.2 + j4.3 (per section); RGS = 4 (per section).
(1) Th = 25 C.
(2) Th = 70 C.
Fig.11 Load power as a function of input power,

typical values.
1996 Oct 21 7
+VDD1
handbook, full pagewidth
C20
1996 Oct 21
C16
C21
R2
C8 C12
Philips Semiconductors
A R8 L11
R3
C13 C22
C9
C17
R4 L12
D.U.T.
50 L9 L13 L17 L19 C31 L21
input C3 L1 L3 L5 L7
C33 50
T1 C1
R1
,,,, ,,,, R10
,, output
L22
C5 C6 C7 C26 C27 C28 C29 C30
VHF push-pull power MOS transistor
C2
C4 C34
8
L2 L4 L6 L8
L10 L14 L18 L20 C32 L23
R5
,,,, ,,,,
L15
,,
MGE688
C10
C23
C14
C18
A
R6
C15
C35 R9 L16
R11
+VDD1 IC1
R7 C24
C36 C37 C11
C19
C25
+VDD2
Fig.12 Class-B test circuit at f = 108 MHz.

BLF278
Product Specification
List of components (see Figs 12 and 13).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2, C33, C34 multilayer ceramic chip capacitor; 22 pF, 500 V
note 1
C3, C4 multilayer ceramic chip capacitor; 100 pF + 68 pF
note 1 in parallel, 500 V
C5, C6, C28 film dielectric trimmer 5 to 60 pF 2222 809 08003
C7 multilayer ceramic chip capacitor; 2 100 pF +
note 1 1 120 pF in
parallel, 500 V
C8, C11, C12, multilayer ceramic chip capacitor 100 nF, 500 V 2222 852 47104
C15, C16, C19,
C36
C9, C10, C13, multilayer ceramic chip capacitor; 1 nF, 500 V
C14, C20, C25 note 1
C17, C18, C22, multilayer ceramic chip capacitor; 470 pF, 500 V
C23 note 1
C21, C24, C35 electrolytic capacitor 10 F, 63 V
note 1 1 18 pF in
parallel, 500 V
C27 multilayer ceramic chip capacitor; 3 15 pF in
note 1 parallel, 500 V
note 1 1 15 pF in
parallel, 500 V
C30 film dielectric trimmer 2 to 18 pF 2222 809 09006
C31, C32 multilayer ceramic chip capacitor; 3 43 pF in
L1, L2 stripline; note 2 43 length 57.5 mm
width 6 mm
width 6 mm
L5, L6 stripline; note 2 43 length 14 mm
width 6 mm
width 6 mm
width 6 mm
L11, L16 2 grade 3B Ferroxcube wideband 4312 020 36642
HF chokes in parallel
L12, L15 4 turns enamelled 2 mm copper wire 85 nH length 13.5 mm
int. dia. 10 mm
leads 2 7 mm
width 6 mm
1996 Oct 21 9

width 6 mm
width 6 mm
width 4.8 mm
L22 semi-rigid cable; note 3 50 ext. dia. 3.6 mm
outer conductor
length 160 mm
R1 metal film resistor 10 , 0.4 W
R2, R7 10 turn potentiometer 50 k
R3, R6 metal film resistor 3 12.1 in
parallel, 0.4 W
R4, R5 metal film resistor 10 ; 0.4 W
R8, R9 metal film resistor 10 5%, 1 W
R10 metal film resistor 4 10 in
parallel, 1 W
R11 metal film resistor 5.11 k, 1 W
IC1 voltage regulator 78L05
T1 1:1 Balun; 7 turns type 4C6 50 14 9 5 mm 4322 020 90770
coaxial cable wound around toroid
Notes
1. American Technical Ceramics capacitor, type 100B or capacitor of same quality.
2. L1 to L10, L13, L14, L17 to L21 and L23 are striplines on a double copper-clad printed-circuit board, with fibre-glass
PTFE dielectric (r = 2.2), thickness 116 inch; thickness of copper sheet 2 35 m.
3. L22 is soldered on to stripline L21.
1996 Oct 21 10
handbook, full pagewidth 150

130
strap
strap
strap strap
strap
100
strap
strap
strap
C20
IC1 C35 L22
V DD1 L11 C16
R11 C11 C22 C21
C8 R8
C36
50 R2 and R7
C17 L11 50
T1 slider R2 output
input C9 V DD1
C12 C13 L21
R3 L12
R4 C31
C1 C3 C33
R1 L1 L3 C7 L5 L7 L9 L13 L17 L19
C5 C6 C26 C27 C29
L2 L4 L6 L8 L10 L14 L18 L20
C30
C2 C4 C28 C34
R5 C32
R6 L23
C15 L15
C10 V DD2 R10
slider R7
C14
C18 L16
R9
C23 L16 C19 C24
C25 MBC438
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth.
Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Fig.13 Printed-circuit board and component layout for 108 MHz class-B test circuit.
1996 Oct 21 11
MGE685 MGE686
2 8
Zi ZL
() ri () RL
1 6
XL
0 4
1 2
xi
2 0
25 75 125 175 25 75 125 175
f (MHz) f (MHz)
Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; Class-B operation; VDS = 50 V; IDQ = 2 0.1 A;
RGS = 4 (per section); PL = 300 W. RGS = 4 (per section); PL = 300 W.
Fig.14 Input impedance as a function of frequency Fig.15 Load impedance as a function of frequency
(series components), typical values per (series components), typical values per
section. section.
MGE687
30
handbook, halfpage
Gp
(dB)
20
handbook, halfpage
10
Zi ZL MBA379
0
25 75 125 175
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 2 0.1 A;

RGS = 4 (per section); PL = 300 W.
Fig.17 Power gain as a function of frequency,

Fig.16 Definition of MOS impedance. typical values per section.
1996 Oct 21 12
Class-AB operation
RF performance in CW operation in a common source push-pull test circuit. Th = 25 C; Rth mb-h = 0.15 K/W unless
otherwise specified. RGS = 2.8 per section; optimum load impedance per section = 0.74 + j2 ; (VDS = 50 V).
f VDS IDQ PL Gp D
MODE OF OPERATION
(MHz) (V) (A) (W) (dB) (%)
CW, class-AB 225 50 2 0.5 250 >14 >50
typ. 16 typ. 55
Ruggedness in class-AB operation

The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7 : 1 through all phases under the
conditions: VDS = 50 V; f = 225 MHz at rated output power.
1996 Oct 21 13
MGE614 MGE612
20 60
(1)
D
Gp (2) (%)
(1)
(dB) (2)
40
10
20
0 0
0 100 200 300 0 100 200 300
PL (W) PL (W)
Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; f = 225 MHz; Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; f = 225 MHz;
ZL = 0.74 + j2 (per section); RGS = 2.8 (per section). ZL = 0.74 + j2 (per section); RGS = 2.8 (per section).
(1) Th = 25 C. (1) Th = 25 C.
(2) Th = 70 C. (2) Th = 70 C.
Fig.18 Power gain as a function of load power, Fig.19 Efficiency as a function of load power,
typical values. typical values.
MGE613
400
handbook, halfpage
PL
(W)
300
(1)
(2)
200
100
0
0 5 10 15
Pi (W)
Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; f = 225 MHz;

ZL = 0.74 + j2 (per section); RGS = 2.8 (per section).
(1) Th = 25 C.
(2) Th = 70 C.
Fig.20 Load power as a function of input power,

typical values.
1996 Oct 21 14
+VDD1
C22
1996 Oct 21
C14

C23
R2
R8 L14
Philips Semiconductors
A C10
C15
R3
C11 C24
C8
C16
R4 L15
D.U.T.
L12 L18 L20 C31 L22
L1 C3 L4 L6 L8 L10 ,,,, ,,
C1 C33
R1 R10
50
,,,
L2
,,, L23
50
input C5 C6 C7 C20 C21 C28 C29 C30 output
C2
C4 C34
VHF push-pull power MOS transistor
L3 L5 L7 L9 L11
15
,,, ,,, L13
,,,, L19 L21 C32 L24
,,
R5
L16 MGE617
C9 C17
C12
C25
A C18
R6
C13
C35
R11 R9 L17
+VDD1 IC1
R7
C38 C37 C36 C26
C19
C27
+VDD2
Fig.21 Class-AB test circuit at f = 225 MHz.

BLF278
Product Specification
List of components (see Figs 21 and 22).

C1, C2 multilayer ceramic chip capacitor; 27 pF, 500 V
note 1
C3, C4, C31, C32 multilayer ceramic chip capacitor; 3 18 pF
note 1 in parallel, 500 V
C6, C30 film dielectric trimmer 2 to 18 pF 2222 809 09006
C7 multilayer ceramic chip capacitor; 100 pF, 500 V
note 1
C8, C9, C15, C18 MKT film capacitor 1 F, 63 V 2222 371 11105
C10, C13, C14, multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104
C19, C36
C11, C12 multilayer ceramic chip capacitor; 2 1 nF in parallel,
note 1 500 V
C16, C17 electrolytic capacitor 220 F, 63 V
C20 multilayer ceramic chip capacitor; 3 33 pF in
C22, C27, C37, multilayer ceramic chip capacitor; 1 nF, 500 V
C38 note 1
C23, C26, C35 electrolytic capacitor 10 F, 63 V
C24, C25 multilayer ceramic chip capacitor; 2 470 pF in
note 1 1 18 pF in
parallel, 500 V
C29 multilayer ceramic chip capacitor; 2 5.6 pF in
C33, C34 multilayer ceramic chip capacitor; 5.6 pF, 500 V
note 1
L1, L3, L22, L24 stripline; note 2 50 length 80 mm
width 4.8 mm
L2, L23 semi-rigid cable; note 3 50 ext. dia. 3.6 mm
outer conductor
length 80 mm
width 6 mm
width 6 mm
width 6 mm
width 6 mm
width 6 mm
1996 Oct 21 16

L14, L17 2 grade 3B Ferroxcube 4312 020 36642
wideband HF chokes in parallel
L15, L16 134 turns enamelled 2 mm copper 40 nH int. dia. 10 mm
wire leads 2 7 mm
space 1 mm
width 6 mm
width 6 mm
R1 metal film resistor 10 , 0.4 W
R2, R7 10 turns potentiometer 50 k
R3, R6 metal film resistor 1 k, 0.4 W
R4, R5 metal film resistor 2 5.62 , in
parallel, 0.4 W
R8, R9 metal film resistor 10 5%, 1 W
R10 metal film resistor 4 42.2 in
parallel, 1 W
R11 metal film resistor 5.11 k, 1 W
IC1 voltage regulator 78L05
Notes
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.
2. L1, L3 to L13, L18 to L22 and L24 are microstriplines on a double copper-clad printed-circuit board, with fibre-glass
reinforced PTFE dielectric (r = 2.2), thickness 116 inch; thickness of copper sheet 2 35 m.
3. L2 and L23 are soldered on to striplines L1 and L24 respectively.
1996 Oct 21 17
119 130
strap
strap
strap strap
Hollow Hollow
rivets rivets 100
strap strap
strap
strap
C24 C22
IC1 to R2,R7 C14
VDD1
R11 C36 L14 C23
C16 R8
L2 C38 C15
C35 L14 L22
C37
slider R2 C11 VDD1
L1 C8
L15
C10 R3
C3 R4 R10
C1 C30 C31C33
L4 C6 L6 L8 L10 L12 L18 C28 L20
50 R1 C5 C20 C21 50
C7 C29
input output
L5 L7 L9 L11 L13 L19 L21
C2 C34
C4 R5 C32
C13 R6
L16 VDD2
slider R7 C12 C9
L3
L23 L24
L17
C18 R9
C17
L17 C19 C26
C25 C27 MBC436
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth.
Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Fig.22 Printed-circuit board and component layout for 225 MHz class-AB test circuit.
1996 Oct 21 18
MGE625
MGE611 3
2 handbook, halfpage
handbook, halfpage
zi XL
ZL
()
()
1
ri
2
RL
xi 1
0
2 150 200 250
150 200 250 f (MHz)
f (MHz)
Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A;
RGS = 2.8 (per section); PL = 250 W. RGS = 2.8 (per section); PL = 250 W.
Fig.23 Input impedance as a function of frequency Fig.24 Load impedance as a function of frequency
(series components), typical values per (series components), typical values per
section. section.
MGE624
20
handbook, halfpage
Gp
(dB)
handbook, halfpage
10
Zi ZL MBA379
0
150 200 250
f (MHz)
Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A;

RGS = 2.8 (per section); PL = 250 W.
Fig.26 Power gain as a function of frequency,

Fig.25 Definition of MOS impedance. typical values per section.
1996 Oct 21 19
PACKAGE OUTLINE
0.25
11 max 11 max
0.13
5.8
2.92 max
2.29 1.65
1.02
21.85 seating plane
0.25 M
5.9
5.5
(4x)
2.54 1 2
10.4 3.3 9.8 15.6

max 3.0 max
5
3 4
5.525
11.05
27.94
MSA285 - 2
34.3 max
Dimensions in mm.
Fig.27 SOT262A1.
1996 Oct 21 20
DEFINITIONS
Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 21 21

BLF 278

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BLF 278

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DISCRETE SEMICONDUCTORS

VHF push-pull power MOS transistor BLF278

FEATURES PINNING - SOT262A1

QUICK REFERENCE DATA

VHF push-pull power MOS transistor BLF278

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Fig.2 DC SOAR. Fig.3 Power derating curves.

VHF push-pull power MOS transistor BLF278

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VHF push-pull power MOS transistor BLF278

VGS = 10 V; ID = 5 A. VGS = 0; f = 1 MHz.

Fig.8 Feedback capacitance as a function of

VHF push-pull power MOS transistor BLF278

Ruggedness in class-B operation

VHF push-pull power MOS transistor BLF278

Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; f = 108 MHz;

Fig.11 Load power as a function of input power,

Fig.12 Class-B test circuit at f = 108 MHz.

VHF push-pull power MOS transistor BLF278

List of components (see Figs 12 and 13).

VHF push-pull power MOS transistor BLF278

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

VHF push-pull power MOS transistor BLF278

handbook, full pagewidth 150

VHF push-pull power MOS transistor BLF278

Class-B operation; VDS = 50 V; IDQ = 2 0.1 A;

Fig.17 Power gain as a function of frequency,

VHF push-pull power MOS transistor BLF278

Ruggedness in class-AB operation

VHF push-pull power MOS transistor BLF278

Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; f = 225 MHz;

Fig.20 Load power as a function of input power,

handbook, full pagewidth

Fig.21 Class-AB test circuit at f = 225 MHz.

VHF push-pull power MOS transistor BLF278

List of components (see Figs 21 and 22).

VHF push-pull power MOS transistor BLF278

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

VHF push-pull power MOS transistor BLF278

C25 C27 MBC436

VHF push-pull power MOS transistor BLF278

Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A;

Fig.26 Power gain as a function of frequency,

VHF push-pull power MOS transistor BLF278

10.4 3.3 9.8 15.6

VHF push-pull power MOS transistor BLF278

Data Sheet Status

LIFE SUPPORT APPLICATIONS

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