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PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.130 @ VGS = - 4.5 V - 2.3
- 20
0.190 @ VGS = - 2.5 V - 1.9
TO-236
(SOT-23)
G 1
Top View
Si2301DS (A1)*
*Marking Code
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 mA - 20
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 0.45
VDS = - 20 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = - 20 V, VGS = 0 V, TJ = 55_C - 10
Dynamicb
Total Gate Charge Qg 5.8 10
Switchingc
td(on) 13.0 25
Turn On Time
Turn-On
tr VDD = - 6 V, RL = 6 W 36.0 60
ID ^ - 1.0
10A A, VGEN = - 4.5
45V ns
td(off) RG = 6 W 42 70
Turn-Off Time
tf 34 60
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
2V
4 4
2 0, 0.5, 1 V 2
1.5 V
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.5
800
r DS(on)- On-Resistance ( W )
C - Capacitance (pF)
0.4
600
0.3 Ciss
VGS = 2.5 V
400
0.2 Coss
VGS = 4.5 V Crss
200
0.1
0.0 0
0 2 4 6 8 10 0 3 6 9 12
r DS(on)- On-Resistance ( W )
1.4
3
(Normalized)
1.2
2
1.0
1
0.8
0 0.6
0 2 4 6 8 - 50 0 50 100 150
0.5
r DS(on)- On-Resistance ( W )
I S - Source Current (A)
0.4
TJ = 150_C
0.3 ID = 2.8 A
TJ = 25_C
0.2
0.1
1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8
0.3 12
10
0.2
VGS(th) Variance (V)
ID = 250 mA
Power (W)
8
0.1 TC = 25_C
Single Pulse
6
0.0
4
- 0.1
2
- 0.2 0
- 50 0 50 100 150 0.01 0.10 1.00 10.00
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 30
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