Professional Documents
Culture Documents
ABSTRACT 0
R16
5k
0
In electrical circuit simulations with simulation R13
100M C7
NOJC686K 006R
software, ideal passive components (resistors, R5 Q3 L1
capacitors, inductors) are typically used because 5k C3
100n
R6
68 Q2N3703
0.9mH + + R10
5
Q4
real component characteristics have been difficult 6
1 3 U1
R7
Q2N3703
C6
0 0
0
to model. Unfortunately, ideal and real passive 15 F
VIN E
R
C
S
O
150 NOJC686K 006R
7 V 12
components have significant differences in their 6
1
CT
RT
C_A
E_A
11
R8
2
D1
ERR-
electrical behavior. These differences lead to 2
ERR+ C_B
E_B
13
14
2k
1
120NQ045
4
discrepancies between actual hardware performance 5 CL+
P
DCL- M
T
U 0 0
N O
and expected results based upon simulation G C
H
S
C1
0
software programs. 0
8 9 1R1
50k
R12 +
100M
TA JA106K016R L1
0.9mH
This paper will describe the development of 0
C1
1n 0
equivalent circuit diagram for modeling real 0 R2
+
C8
+
C9
+
C10
+
C11
0 1
capacitor behavior. Use of this real model in SG1524B
0 0
simulation software can help make circuit 0 0 0
TPSV108K004R0035 TPSV108K004R0035
development more efficient, as the circuits in the TPSV108K004R0035
TPSV108K004R0035 C2
simulations should have similar behavior to the +
actual circuits. TPS D107K010R0050
The model presented here includes real component
behavior for Tantalum and Niobium Oxide
capacitors, with all factors such as ESR and parasitic parameters depends on manufacturing
inductance, and even includes the dependence on technology, methods and material systems. The
temperature. non-ideal parameters have significant influence on
filtering, smoothing and other functions in
electronic applications.
INTRODUCTION
RRS
S R
R00
0.8
LLS
S C0
C0 R1
R1 R
R22 R
R33 R
R44 R5
R5
+
0.4
D
DRR
C1
C1 C
C22 C3
C3 CC44 C5
C5
RRLI
LI 0
RD
RD
0 1 2 3 4 5 6
Application voltage (V)
-
Figure 1: The structure of equivalent circuit Figure 4: Leakage current representation in V-A
diagram (independent on temperature) characteristic
The equivalent circuit consists of a ladder of ideal Equivalent resistance of leakage current could be
resistors R1, R2, R3, R4, R5 and capacitors C1, C2, easy recalculated trough Ohms law RLI=VA/LI
C3, C4, C5 to describe decreasing capacitance from known application voltage VA and resistance
(Figure 2) and drop in ESR (Figure 3) with LI.
200
Capacitance Since Tantalum and Niobium Oxide capacitors are
polar components with MIS (Metal Insulator
Semiconductor) structure [1], the electrical
Capacitance (uF)
10
0.1
Reverse current (mA)
6
0.01
100 1000 10000 100000 1000000 4
frequency (Hz)
2
Figure 3: Reaction of ESR through the frequency
0
0 0.5 1 1.5 2 2.5 3
increasing frequency, which is characteristic of Reverse voltage (V)
capacitors in general. The increased ESR level at
low frequencies is described by the resistor R0 and Figure 5: Reverse mode V-A characteristic
capacitor C0 in parallel combination. The
capacitance C0 is many times higher than nominal EXPLANATION OF TEMPERATURE
capacitance of the capacitor, because this C0 DEPENDENT CAPACITOR MODEL
capacitance represents static electric charge on the
capacitor. Self-inductance of the capacitor is The equivalent circuit diagram includes
modeled by the parallel combination of inductance temperature dependences, even though this is less
LS and resistance RS to create a self-resonance significant for Tantalum and Niobium Oxide
behavior with the rest of circuit capacitance. capacitors than for other technologies (tantalum
Rs should attenuate the peak pulse of the self- polymer, aluminum polymer, high CV ceramic
resonance cycle. components etc.).
There are no voltage dependences included in the 30
Resistance (MOhm)
25
capacitor characteristics are independent of DC bias 20
voltage. 15
Real capacitors are temperature dependent and thus
10
the components from the equivalent circuit are
functions of temperature as is shown in figure 6. 5
RRS RR0 0
S 0(T)
-60 -20 20 60 100 140
LLS C0C0
(T) R1R1
(T) R4R4
(T) R5R5
(T) Temperature (C)
S R2R2
(T) R3R3
(T)
+
RLI(T)
RLI
C
C1 (T)
1 C
C22(T) C
C3 (T)
3 CC44(T) C
C5 (T)
5 equivalent RLI over temperature
RD (T)
R D
-
TANTALUM AND NIOBIUM OXIDE
Figure 6: The structure of equivalent circuit CAPACITOR MODEL LIBRARY USED IN
diagram with temperature dependent components SIMULATION SOFTWARE
The temperature dependence is accounted for by
making resistor and capacitor values in the model Today, simulation software is a nearly
functions of temperature: (R1(T), R2(T), R3(T), indispensable tool in efficient and flexible
R4(T), R5(T)) and (C0(T), C1(T), C2(T), C3(T), development and design of electronic equipment.
C4(T), C5(T)). This mathematical explanation of The equivalent circuit models developed for
temperature behavior can describe capacitance, Tantalum and Niobium Oxide capacitors have been
ESR and Impedance reaction of the capacitor across assembled into a library for use in this simulation
the frequency spectrum. Figure 7 shows the software. As described above, these models have
capacitance and ESR response through temperature been tuned to match the measurements of the actual
and frequency range. components so that the model will yield the same
Capacitance
performance in the simulation circuit as the actual
200 component would in the real circuit. Figure 9 shows
Capacitanc e
200
Capacitance (uF)
100
Temperature -55C
Capac itanc e (uF)
Temperature 125C
1
ES R (Ohm )
0.1
0.01 0.1
100 1000 10000 100000 1000000
frequency (Hz)
0.01
Figure 7: Capacitance and ESR behavior through 100 1000 10000 100000 1000000
the frequency range with temperature dependence fre que ncy (Hz)
The leakage current of the capacitor is even Figure 9: Matching real measurement and
logarithmically temperature dependent and this simulation response of equivalent circuit
influence is included in the RLI(T) temperature
function, which means that the temperature is a key how closely the behavior of the capacitor model
influence on leakage current magnitude. The matches the actual component.
leakage current can be transformed to the Each library consists of two files: a netlist file,
RLI(T)=VA/LI(T) by Ohms law and its exponential which includes a network of ideal components that
explanation can looks like the equation (1) below represents the equivalent circuit diagram (Figure 6),
with detailed graphical view to plot in figure 8. including temperature dependences, and a
component symbol file that contains symbols that
RLI (T ) = RLI 25c 1.39 e 0.013T (1)
represent the components on the circuit diagram.
The libraries contain models for all AVX Tantalum
and Niobium Oxide capacitors, and can be imported 20u
[3]. Capacitance
The next chapter will describe the use of the library 10
from many types of components (transistors, 10Hz 100Hz 1.0KHz 10KHz 100KHz 1.0MHz 10MHz
Impedance
resistors, capacitors, diodes, inductors, integrated Frequency
circuits, etc.). One such circuit diagram is shown in Figure 12: Capacitance, ESR and Impedance
figure 10. behavior of simulated real capacitor
0
R16
5k
0
R11
R13
100M C7
NOJC686K006R
Figure 13 shows a circuit diagram used to compare
0.1
R5 Q3 L1
the level of smoothing given by tantalum and
+
+
C5 C4 5k C3 R6 0.9mH R10
100n 68 Q2N3703 5
V2 Q4
16
0 0 C2 C1
3
U1 Q2N3703 0
TPSD336K025R0200 20n R7 C6 0
R1 L1 TAJA226K006R
OSC
VREF
6 11
R3 1 RT E_A R8 D1
5k 2 ERR-
ERR+ C_B
13 2k 120NQ045 0.5 50uH
+
14
1
0
4 E_B R2
COMP
CL+
SHUT
5
5
GND
R4 CL- 0 0
5k
10
8
0 R1 R12
0 50k 100M R3
0
C1 V1 1u
1n 0
0 V2 = 5
0 PER = 1u
SG1524B PW = 0.5u
C2
R4
Figure 10: Example of circuit diagram suitable for L2 22u_10V_Y5V
2.315V
V(tantalu m)
This section gives examples creating circuit
2.316V
diagrams, their subsequent simulation, and results. 2.315V
R1 2.315V
1 V(ceramic)
5.0V
V1
1V 2.5V
+
C3 0V
R1 L1
2.165V
in out
input V1 90nH
0.01
2.16V
+ + R2
V(tantalu m)
+ C2 + C5
0.36
2.1495V
V2
2.1490V
0.1V 0 0 0
2.1485V NOJD337K004R
2.1480V NOJD337K004R
V(ceramic)
5.0V 0
2.5V
0V
Figure 18: Circuit diagram for simulation of
94us
V(input)
95us
V(tantalu m) V(ce ra mic)
96us 97us 98us DC/DC converter output filter
Ti me
3 . 0V
SUMMARY