IXKH 47N60C

CoolMOS 1) Power MOSFET VDSS = 600 V

ID25 = 47 A
RDS(on) max = 70 m
Low RDSon, high VDSS
Superjunction MOSFET
D TO-247

G
G
D
q
tab
S S
E72873

MOSFET Features

Symbol Conditions Maximum Ratings 3rd generation Superjunction power

MOSFET
VDSS TVJ = 25C 600 V - high blocking capability
VGS 20 V - lowest resistance
- avalanche rated for unclamped
ID25 TC = 25C 47 A inductive switching (UIS)
ID100 TC = 100C 30 A - low thermal resistance
EAS single pulse ID = 10 A; TC = 25C 1800 mJ due to reduced chip thickness
EAR repetitive ID = 20 A; TC = 25C tbd mJ
Applications
dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V tbd V/ns
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Symbol Conditions Characteristic Values Power factor correction (PFC)
(TVJ = 25C, unless otherwise specified) Welding
min. typ. max. Inductive heating

RDSon VGS = 10 V; ID = ID100 c 60 70 m 1)

CoolMOS is a trademark of
VGS(th) VDS = VGS; ID = 2 mA 2 4 V Infineon Technologies AG.

IDSS VDS = VDSS; VGS = 0 V TVJ = 25C 25 A

TVJ = 150C 250 A
IGSS VGS = 20 V; VDS = 0 V 100 nA
Ciss VGS = 0 V; VDS = 100 V tbd pF
Coss f = 1 MHz tbd pF
Qg 255 650 nC
Qgs VGS = 0 to 10 V; VDS = 350 V; ID = 40 A 30 nC
Qgd 110 nC
td(on) 20 ns
tr VGS = 10 V; VDS = 380 V 27 ns
td(off) ID = 47 A; RG = 4.7 111 ns
tf 10 ns
RthJC 0.3 K/W
c
Pulse test, t < 300 s, duty cycle d < 2%

IXYS reserves the right to change limits, test conditions and dimensions. 20080523a

2008 IXYS All rights reserved 1-4

 IXKH 47N60C

Source-Drain Diode
Symbol Conditions Characteristic Values
(TVJ = 25C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V A
VSD IF = 40 A; VGS = 0 V V
trr ns
QRM IF = 40 A; -diF/dt = 100 A/s; VR = 640 V C
IRM A

Component
Symbol Conditions Maximum Ratings
TVJ operating -55...+150 C
Tstg -55...+150 C
Md mounting torque 1.13 Nm

Symbol Conditions Characteristic Values

min. typ. max.
RthCH with heatsink compound tbd K/W
Weight 2.7 g

TO-247 Outline

Symbol Inches Millimeters

min max min max
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
P1 - 0.291 - 7.39

IXYS reserves the right to change limits, test conditions and dimensions. 20080523a

2008 IXYS All rights reserved 2-4

 IXKH 47N60C

Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics

@ 25 Deg. C @ 25 deg. C
50 180
tp = 300s VGS = 10V tp = 300s VGS = 10V
45 6V 160 7V
40 5V
140
35
120 6V
I D - Amperes

I D - Amperes
30
100
25
4.5V 80
20
60
15
5V
40
10

5 4V 20

0 0
0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 12 14 16 18
V D S - Volts V D S - Volts

Fig. 3. Output Characteristics Fig. 4. RDS(on) Norm alized to ID100 Value

@ 125 Deg. C vs. Junction Tem perature
50 2.8
VGS = 10V
tp = 300s VGS = 10V
45 5V 2.5
tp = 300s
40
2.2
R D S (on) - Normalized

35
I D - Amperes

4.5V
30 1.9

25 1.6 I D = 30A

20 I D = 15A
1.3
15 4V
1
10

5 0.7

0 0.4
0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150
V D S - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case

ID100 Value vs. ID Tem perature
4 50
VGS = 10V
3.7 45
tp = 300s
3.4 40
3.1
R D S (on) - Normalized

TJ = 125C 35
I D - Amperes

2.8
30
2.5
25
2.2
20
1.9
15
1.6
1.3 10
TJ = 25C
1 5

0.7 0
0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150
I D - Amperes TC - Degrees Centigrade

IXYS reserves the right to change limits, test conditions and dimensions. 20080523a

2008 IXYS All rights reserved 3-4

 IXKH 47N60C

Fig. 7. Input Adm ittance Fig. 8. Transconductance

120 100

90
100
80
TJ = -40C
70
80 25C
I D - Amperes

g f s - Siemens
60 125C

60 50

40
40 TJ = 125C 30
25C
-40C 20
20
10

0 0
2 2.5 3 3.5 4 4.5 5 5.5 6 0 20 40 60 80 100 120
V G S - Volts I D - Amperes

Fig. 9. Source Current vs. Source-To-

Fig. 10. Gate Charge
Drain Voltage
100 10
VDS = 350V
90 9
I D = 40A
80 8 I G = 10mA

70 7
I S - Amperes

VG S - Volts

60 6

50 5

40 TJ = 125C 4

30 3
TJ = 25C
20 2

10 1

0 0
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 30 60 90 120 150 180 210 240 270
V S D - Volts Q G - nanoCoulombs

Fig. 12. Maxim um Transient Therm al

Fig. 11. Capacitance
Resistance
100000 1
f = 1MHz

C iss
10000
Capacitance - pF

R (th) J C - (C/W)

1000 0.1
C oss

100

C rss
10 0.01
0 10 20 30 40 50 60 70 80 90 100 1 10 100 1000
V DS - Volts Pulse Width - milliseconds

IXYS reserves the right to change limits, test conditions and dimensions. 20080523a

2008 IXYS All rights reserved 4-4