You are on page 1of 5

Driver design for 3kW 13.

56 MHz
multiphase resonant inverter
Nguyen Kien Trung and Kan Akatsu
Department of Electrical Engineering, Shibaura Institute of Technology, Japan.

AbstractIn half-bridge inverter topology, it is well known that is equal to input DC voltage and the output power of the
the driver circuit design at high switching frequency is always inverter is easily extended by using multiphase topology. In
the challenge due to the ground floating of the high-side driver our previous research, a 1.2 kW class D resonant inverter
circuit. At very high switching frequency such as 13.56 MHz, the
common mode noise becomes a critical issue because it strongly with the efficiency of 93.1% was achieved by using RF silicon
effects to the stability and the efficiency of the inverter especially MOSFET [4-5]. Then by using GaN HEMT and multiphase
in case of the high power condition. Furthermore, in the case topology in class DE operation mode, the output power of the
of multiphase resonant inverter topology, the synchronous of the inverter have been extended up to 3 kW with the efficiency of
driver pulse among phases to obtain the same class DE operation 96.1% [6]. In these inverters, the driver circuit design is one of
mode in every phase is also another challenge. In this paper, the
driver circuit design for 3kW 13.56 MHz multiphase resonant the design challenges because of the floating ground with very
inverter with the efficiency of 96.1% is presented in detail. high dv/dt of high-side driver circuit. In this paper, the detail
Index TermsWireless Power Transfer (WPT), Multiphase design of the driver circuit for these inverters is presented.
inverter, High frequency inverter, 13.56 MHz inverter. The challenges of driver circuit design in multiphase resonant
inverter are presented in section II. Then, the design of the
I. I NTRODUCTION driver circuit including common mode noise immunity design,
Recently, the wireless charging systems for electric vehicle PCB design, and the synchronous driver pulse among phases
(EV) are almost using the switching frequency around 85 kHz. are presented in section III. Section IV shows the experiment
The power is up to several kW with the efficiency of over results. Finally, the conclusion and future work are given in
90% [1]. However, because of the low operating frequency, section V.
the wireless transfer distance is only around 20 cm with the
big and heavy coupling system [1]. The MHz range operating II. C LASS DE RESONANT INVERTER AND DRIVE CIRCUIT
DESIGN CHALLENGE
frequency is one of the future research trends where the
transfer distance will be extended up to several meters [2]. Fig. 1 shows the topology of multiphase resonant inverter
It makes more freedom for the EV position in both of static consisting of several half-bridge inverters in parallel. Fig. 2
wireless charging and dynamic charging systems. A lot of shows the driver circuit for high-side of one half-bridge in
material will be saved and the design is more freedom when multiphase inverter. At 13.56 MHz switching frequency, the
the coupling system is much smaller and lighter. Nevertheless, ground of high-side driver circuit is the output voltage point
the MHz operating frequency range is still hard to apply in EV of the half-bridge where the voltage is 13.56 MHz square
wireless charging system because it is still difficult to make waveform with very high dv/dt. As shown in Fig. 2, the
the high power inverter with high efficiency at MHz switching very high dv/dt across the parasitic capacitors Cstray1 and
frequency. Cstray2 generates the common mode noise current in the
At 13.56 MHz switching frequency, the resonant inverter high-side driver circuit as calculated by equation (1). The
with the soft-switching technique is the key solution to obtain common noise current effects to the driver pulse as shown in
high efficiency. The class E or 2 inverter is suitable because (2) which make noise in the driver pulse. The voltage supply
of these inverters can achieve zero voltage switching and zero for the isolation device also has noise from the common
dv/dt switching condition with the simple gate-driver circuit. mode noise current as shown in (3). From these noises, the
However, these types of inverters are difficult to apply at high-side driver circuit may be unstable. To keep the stability
high power output because the topology of these inverters use for high-side driver circuit, the limitation of the common
only one power switch and the stress voltage on the power mode current and its effect are the key solutions.
switch is very high in the comparison with the input DC
voltage [3]. Furthermore, when the inverter is connected to dv
the coupling system with the very high Q resonant coil, the icm1 + icm2 + icm3 = Cstray (1)
dt
voltage across the switching device will be very high during vp1 = vp + icm1 Z2 icm2 Z3 (2)
the startup transient state and it also limits the output power vsupply = vctr icm3 Z1 icm2 Z3 (3)
of these types of inverter. In our research, the class D and
DE resonant inverter with half-bride topology are used. With where Z1 , Z2 and Z3 are the impedance of the trace lines in
half-bridge topology, the voltage across the switching device the driver circuit.
Vctr
Ld1 Ld3 Ld2N-1 Z1
+VDC
Phase 1 Vdriv Vdc
V11 V12 V1N
Phase N
VCs1 +
VGS1 L1
Cb1 Z2
Cin 1 Cbypass - Cstray1 Output
Cb2 L2
2
CbN LN
N
V21 V22 V2N
Ground of
Z3 high-side
VCs2 CO
VGS2 Output driver circuit
load
board (floating with
GND
Ld2 Ld4 Ld2N Cstray2 high dv/dt)

Fig. 1: Multiphase resonant inverter Fig. 2: Common mode noise in high-side driver circuit

ZVS turn Peak



on voltage



cap
cap ZVS turn on
MOSFET-top diode
MOSFET-top
MOSFET-bot MOSFET-bot

(a) Class DE operation mode (b) Class D operation mode

Fig. 3: High dv/dt at the ground of high-side driver circuit

In the design, there are three combination solutions to limit isolation device is 50 V/ns.
the common mode current and its effect. Firstly, the dv/dt
is limited from the inverter design. Fig. 3(a) and Fig. 3(b) dv/dt = Vdc /td (4)
show the dv/dt value in the case of class DE and class D Second, as shown in (1), the stray capacitors Cstray1 and
operation mode, respectively. In class DE operation mode as Cstray2 of the isolation between the driver circuit and the
shown in Fig. 3(a), the value of dv/dt can be estimated by power circuit also affect the value of the common mode
(4). Then the design of the inverter with the considering of current. Therefore, to reduce the common noise current, these
dv/dt is more complicate and critical in 13.56 MHz inverter parasitic capacitors will be minimized by the design of the
as presented in [6]. In our design, the inverter is designed in driver circuit. Finally, the effect of the common current is also
class DE operation mode. However when the circuit parameter limited by using the common mode filter in the driver circuit
change or in the transient state, the inverter may be fallen to design. The second and third solution is explained more detail
class D operation mode where the dv/dt is much higher than in the section III of this paper.
class DE mode as shown in Fig 3(b). Therefore, the design of At 13.56 MHz switching frequency, in multiphase resonant
the inverter should have the margin in the maximum value of inverter, to obtain the highest efficiency of the inverter, the
dv/dt. In this design, the value of dv/dt in class DE operation switching condition must be optimized in every phase. How-
mode is designed at 25 V/ns when the maximum value of the ever, as shown in Fig. 1, the parasitic inductance LdN of
the connection among phases make the optimized condition
is difficult to obtained. To overcome the parasitic inductance
Power
-Dead time adjust
Isolator source
- Pulse width adjust

Gate High
HS drive Side
27.12MHz GaN
oscillator

Flip-flop Cstray1 Output


f/2 High dv/dt
icm
-Dead time adjust
Isolation - Pulse width adjust Isolator
DC/DC
Power Low
source LS Gate Side
+5V
drive GaN

Cstray21
Cstray22 icm=icm11+icm12 icm12
icm11

Fig. 4: Structure of driver pulse generator circuit

Cstray
Primary-side Secondary - side
13.56MHz Isolation Phase
pulse source device module
Z11
Module 1

Z21 Coax cable


Z12
Module 2
Z22
Coax cable
Z1N
Module N

Isolator Drive Z2N


No copper on board Coax cable
this area
Fig. 6: Synchronous driver pulse design
Fig. 5: PCB design for drive board

effect, the module design solution has been proposed in [6]. for typical common mode noise immunity, maximum delay
Then the parameter of every phase is the same. Therefore, skew of 2 ns and the isolation voltage up to 4000V RMS.
to obtain the same class DE operation mode on every phase The structure of the driver pulse generator is shown in Fig.
of the inverter to obtain highest efficiency, the driver pulse 4. The value of stray capacitor Cstray2 which is shown in Fig.
for every phase must be synchronized. This is another design 2 depends on the isolation between the ground of driver pulse
challenge at 13.56 MHz for driver circuit. generator circuit and ground of the power circuit. Therefore,
as shown in Fig. 4, the isolation device is also used for the
III. D RIVE DESIGN low-side driver circuit to isolate grounds of them. The high
isolation DC power source is used for driver pulse generator
A. Common mode noise immunity circuit that also reduces the stray capacitor Cstray2 .
To obtain high isolation common mode noise immunity, The PCB design in driver pulse generator circuit is also
the optical fiber links or transformer are widely used. In this very important because that affects the value of the parasitic
design, the proposed solution leads to more compact design by capacitors Cstray1 and Cstray2 . To obtain the low value of
using integrated IC ISO721M. This device can obtain 50 V/ns these parasitic capacitors, the PCB design must separate the
50 load
RF load

Phase
module 3
Phase
module 4

Phase
module 2 Phase
module 5

Phase
module 1
Output board

Drive board

Fig. 7: Prototype of 13.56 MHz, 3 kW, 5 phases inverter

PCB area of each side where is isolated by the isolation and make the impedance more balance as shown in Fig. 6.
devices. The area between the primary-side and secondary- To connect from the driver board to the phase modules, the
side of the isolation device is designed with no copper to coaxial cable is used. The type and the length of all cable is
obtain lowest parasitic capacitance. The PCB design around the same to keep impedance balance.
the isolation devices is shown in Fig. 5.
IV. E XPERIMENT RESULT
B. Synchronous drive pulse Fig. 7 shows the prototype of the 13.56 MHz, 3kW, 5 phases
To obtain class DE operation mode for all phase in multi- inverter. The inverter includes 5 phase modules which are
phase resonant inverter operating at 13.56 MHz, the driver all driven by the drive board. The IXRFD630 RF MOSFET
pulse for all phase must be synchronized. It becomes a drive IC from IXYS is used to drive the cascode GaN HEMT
challenge in the high-side driver circuit design due to the TPH3006 in the inverter. Fig. 8(a) shows the experiment results
floating high-side driver ground with very high dv/dt. The of the drain-source voltage and gate-source voltage of the high-
proposed design solution is shown in Fig. 6. The driver IC and side GaN in one phase of the five phase resonant inverter. The
the cascode GaN HEMT must be placed as near as possible to input DC voltage is 260 V. The rising time and falling time
minimize the parasitic inductance of the connection between of the drain-source voltage in class DE operation mode is 12
them. Therefore, the driver ICs are directly attached on each ns including the rising and falling time of the oscilloscope.
module. Then, in order to synchronize the driver pulses in In the design, the dead time is designed at 10 ns [6]. Then
every phase, every module is connected with the only one the dv/dt in this case is about 25 V/ns. It is almost the same
driver pulse generator board. with the design. The driver circuit and the inverter work stably.
In the driver pulse generator board, the design of PCB is No noise was observed in the gate-source voltage waveform
very critical to keep the minimum impedance of the trace line of high-side driver circuit. The class DE operation mode was
and the similarity in two sides Z1N = Z2N . In the case of obtained.
multiphase, the impedance in each loop accompany with each Fig 8(b) shows the gate-source voltages of the high-side
module is designed to balance with the other loop. The ferrite GaN in five phases of the inverter in experiment. They are
beat is added in every loop to fill the high frequency noise almost synchronous. This is very importance condition to
VDS (100V/div) VGS (5 V/div) Gate-source voltage of
Voltage scale: 5V/div five phases is synchronous
Time scale:4ns/div

(time scale: 4ns/ div)


td=12 ns

/ 25/ Time scale: 10ns/div

(a) High-side drain-source voltage and gate-source voltage (b) High-side gate-source voltage in five phases

Fig. 8: Driver signal test of 13.56MHz 3kW five phases inverter

100
99 Switching
98 power loss VDS (100V/div)
97 0.4* Output voltage
Percentage (%)

96 (100V/div)
95
94
93
92
91
90
Cal. Exp.
Conduction and
switching power loss 0.891 3.177
(%)
Drive power loss (%) 0.475 0.715
Pout (Efficiency %) 98.61 96.1

(a). Power loss distribution in calculation and experiment (b). Drain-source voltage and output voltage waveform

Fig. 9: Output voltage and efficiency test of five phases inverter at 3kW output power

obtain the same class DE operation mode in 5 phases of the R EFERENCES


inverter to obtain the highest efficiency. Finally, the power [1] S. Li and C. C. Mi, Wireless power transfer for electric vehicle
loss distribution and the output waveform of the inverter in applications, IEEE J. Emerg. Sel. Topics Power Electron., Vol. 3, No.
experiment are shown in Fig. 9. The inverter works stably at 10, pp. 4-17, 2015.
[2] A. K. A. Kurs, R. Moffatt, J. D. Joannopoulos, P. Fisher, and M.
3kW output power with the efficiency of 96.1%. Soljacic, Wireless power transfer via strongly coupled magnetic reso-
nances,Science, vol. 317, no. 5834, pp. 83-86, 2007.
[3] J. Choi, D. Tsukiyama, J. Rivas, Evaluation of a 900 V SiC MOSFET
V. C ONCLUSION in a 13.56 MHz 2 kW resonant inverter for wireless power transfer,in
Control and Modeling for Power Electronics, pp. 1-6, Jun. 2016.
[4] N. K. Trung, T. Ogata, S. Tanaka, K. Akatsu, Analysis and
At 13.56 MHz multiphase resonant inverter, the common PCB Design of Class D Inverter for Wireless Power Transfer Systems
mode noise in high-side driver circuit and the synchronous Operating at 13.56 MHz,IEEJ Journal of Industry Application, Vol. 4,
driver pulse among phases are the critical design issues which No. 6, 2015, pp. 703-713.
[5] N. K. Trung and K. Akatsu, Ringing suppressing method in 13.56MHz
directly affect the stability and the efficiency of the inverter. resonant inverter for wireless power transfer systems, IEEE Energy
The design of the power circuit to limit the dv/dt value, the Conversion Congress and Exposition (ECCE) 2015, September 20-24,
devices selection for driver circuit, the PCB design and the 2015, Montreal, Canada, pp. 2275 2281.
[6] N. K. Trung and K. Akatsu, Design high power and high efficiency in-
impedance matching design is the key solutions to overcome verter operating at 13.56MHz for wireless power transfer systems, IEEE
these challenges. In experiment results, the designed driver Energy Conversion Congress and Exposition (ECCE) 2016, September
circuit works stably at 13.56 MHz, the dead time can be adjust 18-22, 2016, Milwaukee, WI, USA.
exactly, and the driver pulse among phases are synchronized.
Finally, the inverter could obtain 3 kW output power with the
efficiency of 96.1%.

You might also like