2N4125

2N4125

C TO-92
BE

PNP General Purpose Amplifier

This device is designed for use as general purpose amplifiers
and switches requiring collector currents of 10 A to 100 mA.

Absolute Maximum Ratings* TA = 25C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 4.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25C unless otherwise noted

Symbol Characteristic Max Units

2N4125
PD Total Device Dissipation 625 mW
Derate above 25 C 5.0 mW/C
RJC Thermal Resistance, Junction to Case 83.3 C/W
RJA Thermal Resistance, Junction to Ambient 200 C/W

2001 Fairchild Semiconductor Corporation 2N4125, Rev A

 2N4125
PNP General Purpose Amplifier
(continued)

Electrical Characteristics TA = 25C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown IC = 1.0 mA, IB = 0 30 V
Voltage*
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 30 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, I C = 0 4.0 V
ICBO Collector-Cutoff Current VCB = 20 V, IE = 0 50 nA
IEBO Emitter-Cutoff Current VEB = 3.0 V, I C = 0 50 nA

ON CHARACTERISTICS*
hFE DC Current Gain VCE = 1.0 V, I C = 2.0 mA 50 150
VCE = 1.0 V, I C = 50 mA 25
VCE(sat ) Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.4 V
VBE(sat) Base-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.95 V

SMALL SIGNAL CHARACTERISTICS

Cob Output Capacitance VCB = 5.0 V, f = 100 kHz 4.5 pF
Cib Input Capacitance VBE = 0.5 V, f = 100 kHz 10 pF
hfe Small-Signal Current Gain I C = 2.0 mA, VCE = 10 V,
f = 1.0 kHz 50 200
I C = 10 mA, VCE = 20 V,
f = 100 MHz 2.0
NF Noise Figure VCE = 5.0 V, I C = 100 A, 5.0 dB
RS = 1.0 k,
f = 10Hz to 15.7 kHz,
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
 2N4125
PNP General Purpose Amplifier
(continued)

Typical Characteristics

Typical Pulsed Current Gain Collector-Emitter Saturation

V CESAT - COLLECTOR EMITTER VOLTAGE (V)

vs Collector Current Voltage vs Collector Current
h F E - TYPICAL PULSED CURRENT GAIN

250 0.3
V CE = 1 .0V = 10
0.25
125 C
200
0.2

150 0.15 25 C
25 C
0.1
100 125C
- 40 C
0.05
- 40 C

50 0
0.1 0.2 0.5 1 2 5 10 20 50 100 1 10 100 200
I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRENT (mA)

Base-Emitter Saturation Base Emitter ON Voltage vs

Voltage vs Collector Current Collector Current
VBE( ON)- BASE EMITTER ON VOLTAGE (V)
V BESAT - BASE EM ITTE R VOLTAGE (V)

1
1 = 10
- 40 C
0.8
0.8
- 40 C
25 C
125 C 0.6 25 C
0.6
125 C
0.4 0.4

V CE = 1V
0.2 0.2

0 0
1 10 100 200 0.1 1 10 25
I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current Common-Base Open Circuit

vs Ambient Temperature Input and Output Capacitance
I CBO - COLLE CTOR CURRENT (nA)

100
vs Reverse Bias Voltage
V = 25V
CB 10
C obo
10
CAPACITANCE (pF)

1 6

4 C ibo
0.1
2

0.01 0
25 50 75 100 125 0.1 1 10
TA - AMBIE NT TEMP ERATURE ( C) REVERSE BIAS VOLTAGE (V)
 2N4125
PNP General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Noise Figure vs Frequency Noise Figure vs Source Resistance

6 12
V CE = 5.0V V CE = 5.0V
5 f = 1.0 kHz
10
NF - NOISE FIGURE (dB)

NF - NOISE FIGURE (dB)

I C = 1.0 mA
4 8

3 I C = 100 A, R S = 200 6

2 4
I C = 1.0 mA, R S = 200 I C = 100 A

1 2
I C = 100 A, R S = 2.0 k

0 0
0.1 1 10 100 0.1 1 10 100
f - FREQUENCY (kHz) R S - SOURCE RESISTANCE ( k )

Switching Times Turn On and Turn Off Times

vs Collector Current vs Collector Current
500 500

ts t off
100 100
TIME (nS)

TIME (nS)

Ic
t on I
tf B1 = 10 t on

VBE(OFF) = 0.5V
10 10
tr
Ic Ic
I B1 = I B2 = t off I = I =
10 B1 B2 10
td

1 1
1 10 100 1 10 100
I C - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA)

Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)

SOT-223
0.75
TO-92

0.5
SOT-23

0.25

0
0 25 50 75 100 125 150
TEMPERATURE (o C)
 2N4125
PNP General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Voltage Feedback Ratio Input Impedance

)
_ 4

100 10
VCE = 10 V
h re - VOLTAGE FEEDBACK RATIO (x10

f = 1.0 kHz

h ie - INPUT IMPEDANCE (k )
10 1

1 0.1
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Output Admittance Current Gain

1000 1000
h oe - OUTPUT ADMITTANCE ( mhos)

V CE = 10 V V CE = 10 V
f = 1.0 kHz f = 1.0 kHz
500
h fe - CURRENT GAIN

200

100 100

50

20

10 10
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

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Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G