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ISSN: 1658-3655
Benghanem & Alamri / JTUSCI 2: 94-105 (2009)

Modelingofphotovoltaicmoduleandexperimentaldeterminationofserial
resistance

MohammedS.Benghanem1&SalehN.Alamri2
1&2
Department of Physics, Faculty of Sciences, Taibah University, Al-Madinah
Al-Munawrrah, KSA

Received 29 June 2008; revised 6 August 2008; accepted 9 August 2008

Abstract
An explicit model is presented for accurate simulation of the I-V curve characteristic of photovoltaic
(PV) module. The model is compared with the traditional I-V curve characteristic and to some
experimental results to show the accuracy of the method. The explicit model proposed is found to be
reliable and accurate in situations where this model is a good approximation of cell or module
performance. Also, an experimental method is presented to determine the series resistance and shunt
resistance of the PV cells and PV modules.

Keywords: I-V characterization; Simulation models; Experimental measurement; Series resistance;

Shunt resistance.
 Benghanem & Alamri / JTUSCI 2: 94-105 (2009) 95

1. Introduction 2. Review of Existing models of solar cell

The determination of solar cell model Characteristic
parameters from experimental data is important in Several models of PV generator have been
the design and evaluation of solar cells. developed in literature [1-6]. The aim is to get the
The work described in this paper is to characterize I-V characteristic in order to analyze and evaluate
the photovoltaic (PV) modules in real conditions. the PV systems performance. The difference
Also, we give a method to determine the serial between all models is the number of necessary
resistance RS and the shunt resistance RSh of PV parameters used in the computational. The most
module. The serial resistance is mainly the sum of models used are:
contact resistance on the front and back surfaces Explicit Model
Solar Cell Model using four parameters
and the resistances of the bulk and the diffused
Solar Cell Model using five parameters
layer on the top. The shunt resistance represents a Solar Cell Model using two exponential
parallel high-conductivity path across the p-n
2.1. Explicit Model
junction. The shunt resistance can affect the short
This model needs four input parameters, the
circuit current ISC density as well. The PV
short-circuit current ISC , the open-circuit voltage
performance depends on the values of RSh and RS.
VOC , the maximal current Im, and the maximal
Therefore, RS and RSh both need to be recognized
voltage Vm [2]. The relation between the load
and understood in order to analyze the cell and
current I and the output voltage V is given by:
module performance. The most commonly used
method for measuring the series resistance of a V
I = I SC 1 C1 Exp 1
(1)

solar cell was first proposed by wolf and C 2 . V OC
Rauschenbach [1]. This involves measuring the
characteristic of a cell at two different
Where
illuminations.
I Vm
Several other methods are available in the literature C1 = 1 m .Exp
I C .V
SC 2 OC
for the measurement of series and shunt resistances
And
[2-6]. All these methods are based on single Vm
1
exponential model of solar cell and assume that RSh VOC
C2 =
is infinite and presume RS to be independent of the I
Ln1 m

I SC
intensity of illumination, which may not be valid.
In this paper we propose a new approach to
2.2. Solar Cell model using four parameters
simulate the IV characterization by given a
The classical equation describing the I-V curve of a
photovoltaic resistance for any materials properties
single solar cell is given by:
of the solar cell. Also, the photovoltaic resistance is
given for silicon cell. We present an experimental
q (2)
method for determination of RS and RSh of a solar I = I Ph I 0 . Exp (V + R S .I ) 1
A. K .T
cell using the I-V characteristic based on explicit
Where I is the load current and V the output
model proposed.
voltage, I0 is the diode reverse saturation current,
IPh is the photo-generated current, RS is the series

Modelingofphotovoltaicmoduleandexperimentaldeterminationofserialresistance
 Benghanem & Alamri / JTUSCI 2: 94-105 (2009) 96

resistance, q is the electric charge, K the Boltzman current Im at the maximum power point and the
constant, T is the temperature (oK) and A is the slopes of curve near VOC and ISC.
ideality factor. The four parameters of this model Thus:
are: IPh, I0, RS, and A. dV
The effect of shunt resistance is not taking a count = RSO (4)
dI V =Voc
in this model. Equation (2) describes the I-V curve
quite well, but the parameters cannot be measured
in a simple manner. Therefore, a fit based on a dV (5)
= RSh 0
smaller number of parameters which can be dI I = Isc
measured easily have been developed [3]. These
include:
- The open circuit voltage VOC. The following equations are obtained:

- The short-circuit current ISC.

V m + I m .R S 0 VOC
A= (6)
- The maximum power Pm.

V V Im
2.3. Solar Cell model using five parameters Vt Ln I SC m I m Ln I SC OC +

R Sh R Sh I VOC
SC R
In this model, the effect of shunt resistance is Sh 0

considered [4]. Figure 1 shows a solar cell Where:

equivalent circuit including series resistance RS and K .T
Vt =
shunt resistance RSh. q

RS I V V (7)
I 0 = I SC OC .Exp OC
RSh A.Vt

IPh V A.Vt V (8)

RS = R S 0 .Exp OC
ID,VD RSh
I0 A.Vt

R I .R (9)
I Ph = I SC .1 + S + I 0 . Exp SC S 1
Fig.1. Solar cell equivalent circuit including R Sh

A.Vt


series resistance and shunt resistance.
(10)
The mathematical description of this circuit is RSh = RSh 0
given by the following equation: 2.4. Solar cell model using two exponential
The solar cell equivalent circuit including series
q V + R S .I (3) resistance RS, shunt resistance RSh, two
I = I Ph I 0 . Exp (V + RS .I ) 1
A.K .T RSh
exponential-type ideal junction, a constant photo-
The five parameters of this model are: IPh, I0, RS, generated current source is represented by Fig. 2.
RSh and A. For a given temperature and solar The mathematical description of this circuit is
irradiation intensity, these parameters are given by the following equation [5]:
determined by using the open-circuit voltage VOC,
the short-circuit current ISC, the voltage Vm and the

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 Benghanem & Alamri / JTUSCI 2: 94-105 (2009) 97

RS I

IPh V

ID1 ID2 RSh

Fig.2. Solar cell equivalent circuit for model with two

exponential.

q q V + R S .I (11)
I = I Ph I 01 . Exp (V + R S .I ) 1 I 02 . Exp (V + R S .I ) 1
A1 .K .T A2 .K .T R Sh

The parameters of this model IPh, A1, A2, I01, I02, RS

e.I 02 e.VOC (16)
and RSh are determined by the following X 2V = .Exp
A.K .T A.K .T
approximations [5]:
1
IPh= ISC If we consider << (X1V + X2V), we can obtain
R Sh

1 I Ph a simplified relation for RS as:

I 01 = . (12)
2 e.VOC
Exp 1 dV 1
K.T RS = + (17)
V =Voc
+ X 2V
dI X 1V

1 I Ph
I 02 = . (13) The shunt resistance RSh is deduced from equation
2 e.V
Exp OC 1 (14) with I= ISC
2.K .T

1
RS is obtained by derivation of equation (11) at RSh = (18)

V= VOC :
1
dV + X 1i + X 2i

dV + RS
RS = +
1
(14) dI I = Isc
dI V =Voc 1
X 1V + X 2V +
RSh Where:

With:
I 01 I .R (19)
X 1i = Exp SC S
e.I 01 e.V Vt Vt
X 1V = .Exp OC (15)
K .T K .T I 02 I .R
X 2i = Exp SC S (20)
A.Vt A.Vt

Modelingofphotovoltaicmoduleandexperimentaldeterminationofserialresistance
 Benghanem & Alamri / JTUSCI 2: 94-105 (2009) 98

3. Comparison with experimental 3.2. Four parameters Model

Characteristic This method is based on single exponential
3.1. Explicit Model model of solar cell and assumes that RSh is
Fig.3 shows that the model gives a infinite, an assumption that may not be valid for
best representation of I-V curve, but the the cell having low RSh values.
limitation of this method is that it doesn't take Fig.4 shows the I-V curve given by this method.
account of serial resistance RS and shunt We note a difference between experimental I-V
resistance RSh. curve and those simulated in non-linear region
near the maximum power point.

Explicit model
Experimental data

2.5
Current (A)

1.5

0.5

0
0 2 4 6 8 10 12 14 16 18 20
Voltage (V)
Fig. 3. The I-V characterization using explicit model at 800 W/m2
and 45oC.

Three parameters model

Experimental data

2.5
Current (A)

1.5

0.5

0
0 2 4 6 8 10 12 14 16 18 20
Voltage (V)
Fig. 4. I-V characterization using four parameters model at
800 W/m2 and 45oC.
Modelingofphotovoltaicmoduleandexperimentaldeterminationofserialresistance
 Benghanem & Alamri / JTUSCI 2: 94-105 (2009) 99

3.3. Five parameters model
Fig.5 shows the I-V characterization given
by the five parameters model.
The five parameters model is shown to give
accurate reliable results but gives non-physical
values at low illuminations [4].
In order to evaluate the accuracy of the models a
statistical tests was used [7], root mean square
error (RMSE). The RMSE is given as follow:
1/ 2
1 n
RMSE = ( I si I mi ) 2
n i =1
Where n is the number of data, Isi is the ith
simulated current and Imi is the ith measured
current. The RMSE test provides information on
the short-term performance of the simulation
model. The lower value of RMSE means the
more accuracy for the model used.
The RMSE values of the models were calculated.
Table 1 shows the RMSE values obtained from
the models presented. The RMSE average
values, which are a measure of the accuracy of
estimation, have been found to be the lowest for
Five parameters model (RMSE = 0.022) at
(21)
illumination of 800 W/m2.

Five parameters model

Experimental data

2.5
Current (A)

1.5

0.5

0
0 2 4 6 8 10 12 14 16 18 20
Voltage (V)
Fig. 5. I-V characterization using five parameters model at 800 W/m2
and 45oC.

Table.1. RMSE values for each model

Solar irradiation (Wh/m2) 1000 800

Temperature (oC) 25 45

Explicit model 0.039 0.027

RMSE Four parameters model 0.047 0.104

Five parameters model 0.095 0.022

Modelingofphotovoltaicmoduleandexperimentaldeterminationofserialresistance
 Benghanem & Alamri / JTUSCI 2: 94-105 (2009) 100

This means the good estimation of I-V By using the following simplification:
characterization by using a five parameters model V + RPV . I

than the three parameters model and the explicit VT
e
>> 1
model for the illumination of 800 W/m2. and IPh= ISC
The I-V curve can be expressed as:
4. Explicit model proposed
V +VR PV .I

Measurements of peak-power and internal series I = I SC I 0 . e T (24)

resistance under natural ambient conditions need
mathematical corrections of the measured I-V
characteristic, considering irradiance and cell V + RPV . I
I SC I
temperature. =e VT

I0
The purpose of I-V characteristic approximation by
Then:
means of equivalent circuit diagrams lies in the
explicit calculability of matching problems I I
V = VT .Ln SC R PV .I
(25)
between solar generators and several loads. The I0
equivalent circuit diagram for the effective solar
Since I0, VT and RPV are unknown, three conditions
cell characteristic is given by Fig.6.
are required to enable use of this fit:

R PV I 1. If I=0, then V=VOC.

2. At the maximum power point the fit is
IPh tangent to the hyperbola Pm= V.I
3. The slope S at the open circuit voltage is
ID , V D V
to be considered.
The condition (1) yields:
Fig. 6. Equivalent circuit diagram for Effective solar
cell characteristic.
I
VOC = V I =0
= VT .Ln SC
I0 Or:
The effective solar cell characteristic is given by
the following model:
VOC
VT =
V +VR PV . I
I (26)
Ln SC
I = I ph I 0 e T
1 (22) I0


The explicit version is: and then:
VOC

I 0 = I SC .e VT
I ph I + I 0 (27)
V = VT .Ln RPV .I (23) The condition (2) can be expressed as:
I0
Pm
RPV is the photovoltaic resistance, not to be V I =Im
= (28)
Im
confused with the serial resistance RS.
We need to determine the following parameters: V Pm P
= = m2 (29)
RPV, VT, I0 and IPh. I I =Im
I I I =I Im
m

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Differentiating equation (29) according to equation is then given by the approximate function [6]:
(25), we get:
VOC I .V V I
S= 1 . p max p max + 2 . p max + 3 . p max + 4
V VT I SC I SC .VOC VOC I SC
= R
I (I Sc I ) PV With the equation-constants:
For I =Im, we get:
5.411

V VT P 6.450
=
= R PV = m2 (30) 3.417
I I =Im
(I SC I m ) Im
4.422

Then: We note that the equation (36) is independent of
Vm VT material properties of the solar cell.
R PV = (31)
I m (I SC I m ) The RPV is calculated using equation (34) for
By substituting equation (26) in equation (31), we silicon cell or using equation (36) for any materials
get: properties of the solar cell. The value of RPV is
substituted into equation (22) to find the I-V curve
V VOC
RPV = m (32) of a single solar cell.
Im I
(I SC I m ).Ln SC
I0
4.1. Comparison between Explicit model
VOC V proposed and experimental data
VT = 7
= OC
Ln10 16.11 Fig. 7 shows a good agreement between
experimental I-V curve and those given by the
16.11 explicit model proposed for different illuminations.
I = I SC 1 10 7.Exp (V + R PV .I ) (33)
VOC Explicit model (1000 W/m2)
Explicit model (800 W/m2)
equation (33) yields: Experimantal data at 1000 W/m2
Experimental data at 800 W/m2

Vm VOC
RPV = (34) 3.5

I m 16.11(I SC I m ) 3

The condition (3) yields: 2.5

C urrent (A )

2
dV VT
S= = R
dI I =0 (I Sc ) PV 1.5

1
Then:
0.5

VT = (S + R PV ).I SC (35) 0
0 2 4 6 8 10 12 14 16 18 20
Substituting equation (35) into equation (31), we Voltage (V)
get: Fig. 7. I-V curve characterization for two illuminations.

I SC Vm I Fig. 8 shows the I-V curve of the explicit model

RPV = S + 1 SC (36)
Im Im Im proposed with experimental data and comparison

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with others models studied. The RMSE values

obtained for the explicit model proposed is 0.01 for
the illumination of 800 W/m2 and 0.03 for the
illumination of 1000 W/m2. The experimental I-V
curve is given by the curve tracer (PVPM 2540C)
for PV modules (Fig.9).

Five parameters model

Three parameters model
Fig. 9. PVPM 2540C: Curve Tracer for PV Modules.
Explicit model proposed
Experimantal data

3 4.2. New Experimental method for calculation of

Rs and RSh
2.5
RSh is calculated near the two points P1 and
Current (A)

2
P2 on the illuminated I-V characteristic. P1 is near
1.5 the short-circuit point and thus corresponds to a

1
low value of voltage; P2 is near the maximum
power point and therefore corresponds to a higher
0.5
voltage.
0
0 2 4 6 8 10 12 14 16 18 20 RS is calculated near the two points P3 and P4 on
Voltage (V) the illuminated I-V characteristic. P4 is near the
Fig. 8a. Simulation and Experimental I-V Curve for
open-circuit point (V= Voc) and P3 is near the
illumination at 800 W/m2.
maximum power point.
The choice of the four working points P1, P2, P3

Five parameters model

and P4 is deduced by iteration using the algorithm
Three parameters model given below.
Explicit model proposed
Experimantal data 4.2.1. Methodology
3.5 The condition (3) gives:

3
dV
2.5 S=
dI
Current (A)

I =0
2

This condition means to find a slope near the open

1.5
circuit voltage VOC. So, experimentally we chose
1
two working points P4 corresponding to the
0.5
coordinates ( I4, V4) and P3 with the coordinates
0
0 2 4 6 8 10 12 14 16 18 20 (I4, V4). Then, the slope S is given by:
Voltage (V)
dV V V3
Fig. 8b. Simulation and Experimental I-V Curve for S= = RS = 4 (37)
illumination at 1000 W/m . 2 dI I3 I 4

Modelingofphotovoltaicmoduleandexperimentaldeterminationofserialresistance
 Benghanem & Alamri / JTUSCI 2: 94-105 (2009) 103

: I4 =0 ( V4 = VOC ) and I3 is given by iteration

I ph I i + I 0
until we find the value of RS equal to the Vi = VT .Ln R S .I i i = 1 to 4.
I0
experimental value RSM measured by the
The following examples show the accuracy of this
Measuring device and curve tracer for PV modules method.
and strings (PVPM 2540C) as shown in Fig.10.
3 P2
P1

2.5

Current (A)
2

1.5
P3

0.5

P4
0
0 2 4 6 8 10 12 14 16 18 20
Fig. 10. RSM measurement of PV module by PVPM Voltage (V)
2540C.
Fig. 11. Experimental working points.
Algorithm
Example 1: Monocrystalline PV-Module
V4 = VOC , I4 = 0 ;
Isophoton
Vm, Im, ISC and RSM are fixed ;
Voc =20.51 V
I3 varies from 0 to ISC ;
Vm =16.58 V
From each values of I3, we get V3 ( equ.23) and
Im = 3.01 A
then we calculate RS (equ.37).
Isc = 3.34 A
If the calculated value of RS is not equal to RSM, we
The I-V characteristic of the PV-module Isophoton
increase the value of I3 until the value of RS
is given by Fig.12. We have found: RS = 0.64
reaches the measured value RSM. We have find that
and RSh = 89.42 .
I3 is equal to 50 % of ISC.
3.5
The shunt resistance RSh is given by the relation:
3 P1 P2
V2 V1
RSh = (38) 2.5
I1 I 2
2
Current (A)

The optimal choice is given by (Fig.11):

P3
I1 = ISC (V= 0v) for the point P1. 1.5

I2= 95 % of ISC for the point P2.

1
I3 = 50 % of ISC for the point P3.
0.5
I4 = 0 (V = Voc) for the point P4.
The different voltages V1, V2, V3 and V4 P4
0
0 5 10 15 20 25
corresponding to each working points P1, P2, P3 Voltage (V)

and P4 are given by using the equ.23: Fig. 12. Experimental working points for
Monocrystalline PV-Module Isophoton.

Modelingofphotovoltaicmoduleandexperimentaldeterminationofserialresistance
 Benghanem & Alamri / JTUSCI 2: 94-105 (2009) 104

Example2: Monocrystalline PV-Module BP585F The values of series and shunt resistance are given
Voc =22.3 V in table 2. We note that for the same illumination,
Vm =18 V the series resistance of the PV module BP585F is
Im = 4.72 A the lower. The high value of shunt resistance is
Isc = 5 A given by the PV module Isophoton.
We have found: Rs = 0.50 and Rsh = 77.75
Fig.13 shows the I-V characteristic for Table.2. Values of series and shunt resistances for
experimental manipulation of the PV-Module different PV modules
BP585F.
PV modules Isophoton BP585F MSX 40
PV module BP585F
5
RS () 0.64 0.50 3.06
4.5
P1 P2
RSh () 89.42 77.75 63.83
4

3.5

3 5. Conclusion
Current (A)

2.5 P3 The explicit model proposed for the I-V curve

2 is shown to give accurate reliable results. This
1.5 model gives parameter values with good precision.
1 Also, the experimental determination of serial
0.5
resistance RS and shunt resistance RSh is more
0
P4
0 5 10 15 20 convenient method. A theoretical expression given
Voltage(V)
in equation (36) gives the photovoltaic resistance
Fig. 13. I-V characteristic for the PV-module BP585F.
RPV for any materials properties of the solar cell. If
Example3: I-V curve approximation using silicon cell the photovoltaic resistance is
Figure 14 shows the I-V curve for some modules given by equation (34). The value of RPV is
by using the explicit model proposed. substituted into equation (22) to find the I-V curve
PV module Isophoton of a single solar cell or PV module.
PV module Solarex
PV module BP585F
3.5
Acknowledgements
3
We wish to thank the Deanship of Scientific
2.5 Research Taibah University who financially
supported this work, under contracted research
Current (A)

project 33/427.
1.5

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0
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Voltage (V) IEEE, pp.281-288, 1982
Fig. 14. I-V characterization for different modules [3] S. SINGER, B. ROZENSHTEIN and S.
using the explicit model proposed. SAURAZI. Characterization of PV array

Modelingofphotovoltaicmoduleandexperimentaldeterminationofserialresistance
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output using a small number of measured
parameters.
Solar Energy, Vol.32, No5, pp.603-607,
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[4] D. S. H. CHAN, J. R. PHILIPS and J. C. H.
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[5] J.A. GOW, C.D. MANNING. Development
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Modelingofphotovoltaicmoduleandexperimentaldeterminationofserialresistance