SS6610/11

High Efficiency Synchronous

Step-up DC/DC Converter

FEATURES DESCRIPTION
High efficiency. (93% when VIN=2.4V, VOUT=3.3V, The SS6610/SS6611 are high-efficiency step-up
IOUT=200mA) DC/DC converters, with a start-up voltage as low
Output current up to 500mA. (SS6610 at VIN=2.4V as 0.8V, and an operating voltage down to 0.7V.
and VOUT=3.3V)
Consuming only 20A of quiescent current,
Quiescent supply current of 20mA.
these devices include a built-in synchronous rec-
Power-saving shutdown mode (0.1A typical).
tifier that reduces size and cost by eliminating
Internal synchronous rectifier (no external diode
required). the need for an external Schottky diode, and
On-chip low-battery detector. improves overall efficiency by minimizing
Low battery hysteresis losses.
Space-saving package: MSOP-8
The switching frequency can range up to
500KHz depending on the load and input volt-
APPLICATIONS age. The output voltage can be easily set; by
Palmtop & Notebook Computers. two external resistors or 1.8V to 5.5V; con-
PDAs necting FB to OUT to get 3.3V; or connecting
Wireless Phones
to GND to get 5.0V. The peak current of the
Pocket Organizers.
internal switch is fixed at 1.0A (SS6610) or
Digital Cameras.
0.65A (SS6611) for design flexibility.
Hand-Held Devices with 1 to 3 Cells of
NiMH/NiCd Batteries.

TYPICAL APPLICATION CIRCUIT

VIN +
47F 22H

LX
ON OFF SHDN Output 3.3V, 5.0V
or Adj. (1.8V to
OUT +
SS6610 5.5V) up to
SS6611 47F 300mA
Low Battery LBI
LBO Low-battery
Detection
Detect Out
REF GND FB
0.1F

Rev.2.01 11/06/2003 www.SiliconStandard.com 1 of 16

 SS6610/11

ORDERING INFORMATION PIN CONFIGURATION

SS6610CX XX
SS6611CX XX
MSOP-8 TOP VIEW

Packing
FB 1 8 OUT
TR: Tape and reel
LBI 2 7 LX
Package type
O: MSOP-8 LBO 3 6 GND

REF 4 5 SHDN
Example: SS6610COTR
in MSOP-8 package supplied
on tape and reel

ABSOLUTE MAXIMUM RATINGS

Supply Voltage (OUT to GND) 8.0V
Switch Voltage (LX to GND) VOUT+ 0.3V
SHDN , LBO to GND 6.0V
LBI, REF, FB, to GND VOUT+0.3V
Switch Current (LX) -1.5A to +1.5A
Output Current (OUT) -1.5A to +1.5A
Operating Temperature Range -40C ~ +85C
Storage Temperature Range -65C ~150C

TEST CIRCUIT
Refer to typical application circuit.

Rev.2.01 11/06/2003 www.SiliconStandard.com 2 of 16

 SS6610/11
ELECTRICAL CHARACTERISTICS (VIN = 2.0V, VOUT = 3.3V (FB = VOUT), RL = , TA = 25C,
unless otherwise specified.)

PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT

Minimum Input Voltage 0.7 V

Operating Voltage 1.1 5.5 V

Start-Up Voltage RL=3k (Note1) 0.8 1.1 V

Start-Up Voltage Tempco -2 mV/C

Output Voltage Range VIN<VOUT 1.8 5.5

Output Voltage FB = VOUT 3.17 3.3 3.43 V

FB=OUT SS6610 300 350

Steady State Output Current (VOUT =3.3V) SS6611 150 300

mA
(Note 2) FB=GND SS6610 180 230

(VOUT =5.0V) SS6611 90 160

Reference Voltage IREF= 0 1.199 1.23 1.261 V

Reference Voltage Temp. Coeff. 0.024 mV/C

Reference Load Regulation IREF = 0 to 100A 10 30 mV

Reference Line Regulation VOUT = 1.8V to 5.5V 5 10 mV/V

FB , LBI Input Threshold 1.199 1.23 1.261 V

Internal switch On-Resistance ILX = 100mA 0.3 0.6

SS6610 0.80 1.0 1.25

LX Switch Current Limit A
SS6611 0.50 0.65 0.85

LX Leakage Current VLX=0V~4V; VOUT=5.5V 0.05 1 A

Operating Current into OUT

VFB = 1.4V , VOUT = 3.3V 20 35 A
(Note 3)

Shutdown Current into OUT SHDN = GND 0.1 1 A

VOUT= 3.3V ,ILOAD = 200mA 90

Efficiency %
VOUT = 2V ,ILOAD = 1mA 85

Rev.2.01 11/06/2003 www.SiliconStandard.com 3 of 16

 SS6610/11
ELECTRICAL CHARACTERISTICS (Continued)

PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT

LX Switch On-Time VFB =1V , VOUT = 3.3V 2 4 7 s

LX Switch Off-Time VFB =1V , VOUT = 3.3V 0.6 0.9 1.4 s

FB Input Current VFB = 1.4V 0.03 50 nA

LBI Input Current VLBI = 1.4V 1 50 nA

SHDN Input Current V SHDN = 0 or VOUT 0.07 50 nA

LBO Low Output Voltage VLBI = 0, ISINK = 1mA 0.2 0.4 A

LBO Off Leakage Current V LBO = 5.5V, VLBI = 5.5V 0.07 1

LBI Hystereisis 50 mV

VIL 0.2VOUT
SHDN Input Voltage V
VIH 0.8VOUT

Note 1: Start-up voltage operation is guaranteed without the addition of an external Schottky diode between the
input and output.
Note 2: Steady-state output current indicates that the device maintains output voltage regulation under load.
Note 3: Device is bootstrapped (power to the IC comes from OUT). This correlates directly with the actual
battery supply.

Rev.2.01 11/06/2003 www.SiliconStandard.com 4 of 16

 SS6610/11
TYPICAL PERFORMANCE CHARACTERISTICS
160 0.5

140
Input Battery Current (A)

0.4
120

Shutdown Current (A)

100 VOUT=5V (FB=GND) 0.3

80

0.2
60

40
0.1
20 VOUT=3.3V (FB=OUT)
0 0.0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Input battery voltage (V) Supply Voltage (V)
Fig. 1 No-Load Battery Current vs. Input Battery Fig. 2 Shutdown Current vs. Supply Voltage

CCM/DCM Boundary Output Current (mA)

1.8 400

1.6 L=22H
350
CIN=100F
1.4 VOUT=5.0V (FB=GND) COUT=100F
Start-Up Voltage (V)

300
1.2
250
1.0
200 VOUT=3.3V (FB=OUT)
0.8

150
0.6

VOUT=3.3V (FB=OUT) 100

VOUT=5.0V (FB=GND)
0.4

0.2 50

0.0 0
0.01 0.1 1 10 100
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Output Current (mA) Input Voltage (V)
Fig. 3 Start-Up Voltage vs. Output Current Fig. 4 Turning Point between CCM & DCM

100 220

200
SS6610 (I LIMIT =1A)
90
180
80
Ripple Voltage (mV)

160
70 VIN=1.2V
Efficiency (%)

140
60 VIN=3.6V
120
50 VIN=2.4V
100
40
VIN=3.6V 80
VOUT=5.0V
30
60 VIN=2.4V
VOUT=5.0V (FB=GND) L=22H
20 40
CIN=47F
10 SS6610 (I LIMIT =1A) VIN=1.2V
20 COUT=47F
0 0
0.01 0.1 1 10 100 1000 0 50 100 150 200 250 300 350 400 450 500 550 600 650
Output Current (mA) Output Current (mA)
Fig. 5 Efficiency vs. Load Current (ref. to Fig.33) Fig. 6 Ripple Voltage (ref. to Fig.33)

Rev.2.01 11/06/2003 www.SiliconStandard.com 5 of 16

 SS6610/11
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

240 100
SS6610 (ILIMIT =1A) 90
200
80 VIN=3.6V
Ripple Voltage (mV)

VIN=3.6V 70 VIN=2.4V

Efficiency (%)
160
60
VIN=1.2V

120 VIN=2.4V 50

40
80 VOUT=5.0V
30
L=22H
VOUT=5.0V (FB=GND)
CIN=100F 20
40
COUT=100F 10
SS6611 (I LIMIT =0.65A)
VIN=1.2V
0 0
0 100 200 300 400 500 600 700 800 0.01 0.1 1 10 100 1000
Output Current (mA) Output Current (mA)
Fig. 7 Ripple Voltage (ref. to Fig.33) Fig. 8 Efficiency vs. Load Current (ref. to Fig.33)

160 120
SS6611 (I LIMIT =0.65A) SS6611 (I LIMIT =0.65A)
140
VIN=3.6V 100
VIN=3.6V
120
Ripple Voltage (mV)

Ripple Voltage (mV)

80
100

80 60

60 VIN=2.4V
VOUT=5.0V 40 VIN=2.4V VOUT=5.0V
40
L=22H L=22H
VIN=1.2V CIN=47F 20
CIN=100F
VIN=1.2V
20 COUT=47F COUT=100F
0 0
0 50 100 150 200 250 300 350 400 450 500 550 0 100 200 300 400 500 600
Output Current (mA) Output Current (mA)
Fig. 9 Ripple Voltage (ref. to Fig.33) Fig. 10 Ripple Voltage (ref. to Fig.33)

100 260

90
240 SS6610 (I LIMIT =1A)
220
80
200
VIN=1.2V
Ripple Voltage (mV)
(V) Efficiency (%)

70 180

60 160
VIN=2.4V
140
50
120 VIN=2.4V
40 100

80
VOUT=3.3V
30
VOUT=3.3V (FB=OUT) 60 L=22H
20 VIN=1.2V CIN=47F
SS6610 (I LIMIT =1A) 40
10 20 COUT=47F
0 0
0.01 0.1 1 10 100 1000 0 50 100 150 200 250 300 350 400 450 500 550 600
Output Current (mA) Output Current (mA)
Fig. 11 Efficiency vs. Load Current (ref. to Fig.32) Fig. 12 Ripple Voltage (ref. to Fig.32)

Rev.2.01 11/06/2003 www.SiliconStandard.com 6 of 16

 SS6610/11
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
100
140 SS6610 (I LIMIT =1A)
90

120 80
Ripple Voltage (mV)

70 VIN=1.2V

Efficiency (%)
100 VIN=2.4V
VIN=1.2V VIN=2.4V 60
80
50

60 40

40 VOUT=3.3V 30 VOUT=3.3V (FB=OUT)

CIN=100F 20 SS6611 (I LIMIT =0.65A)
20 COUT=100F
SS6610 (ILIMIT =1A) 10

0 0
0 50 100 150 200 250 300 350 400 450 500 550 0.01 1 10 100 1000
Output Current (mA) Output Current (mA)
Fig. 13 Ripple Voltage (ref. to Fig.32) Fig. 14 Efficiency vs. Load Current (ref. to Fig.32)

140 120
SS6611 (I LIMIT =0.65A) 110 SS6611 (I LIMIT =0.65A)
120
100

90
Ripple Voltage (mV)

Ripple Voltage (mV)

100
80

80 70

VIN=2.4V 60
60 50 VIN=2.4V
VOUT=3.3V 40 VOUT=3.3V
40
L=22H 30 L=22H
VIN=1.2V CIN=47F 20 CIN=100F
20 VIN=1.2V
COUT=47F 10 COUT=100F
0 0
0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500
Output Current (mA) Output Current (mA)
Fig. 15 Ripple Voltage (ref. to Fig.32) Fig. 16 Ripple Voltage (ref. to Fig.32)

1.26 0.50

0.45
1.25 P-Channel
0.40
Reference Voltage (V)

0.35
Resistance ()

1.24
0.30

1.23 0.25 N-Channel

0.20
1.22
0.15

0.10 VOUT=3.3V
1.21
ILX=100mA
IREF=0 0.05

1.20 0.00
-40 -20 0 20 40 60 80 -60 -40 -20 0 20 40 60 80 100
Temperature (C) Temperature (C)
Fig. 17 Reference Voltage vs. Temperature Fig. 18 Switch Resistance vs. Temperature

Rev.2.01 11/06/2003 www.SiliconStandard.com 7 of 16

 SS6610/11
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

800 900
Maximum Output Current (mA)

Maximum Output Current (mA)

700 VOUT=3.3V (FB=OUT) 800
VOUT=5.0V (FB=GND)
700
600
SS6610 (ILIMIT=1A)
600 SS6610 (ILIMIT=1A)
500
500
400
400
300
300

200
200

100 SS6611 (ILIMIT=0.65A) 100

SS6611 (I LIMIT=0.65A)

0 0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Input Voltage (V) Input Voltage (V)
Fig. 19 Maximum Output Current vs. Input Voltage Fig. 20 Maximum Output Current vs. Input Voltage

1.2 160
SS6610 (I LIMIT=1A)
Switching Frequency fosc (KHz)
140
1.0
120 VOUT=5.0V
0.8
100
ILIM (A)

0.6 80
SS6611 (ILIMIT=0.65A)
60 VOUT=3.3V
0.4
40
0.2
20 IOUT=100mA

0.0 0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Output Voltage (V) Supply Voltage (V)
Fig. 21 Inductor Current vs. Output Voltage Fig. 22 Switching Frequency vs. Supply Voltage

220

200
VIN=2.4V
Switching Frequency Fosc (KHz)

VOUT=3.3V
180 VIN=1.2V VIN=2.4V
160
VOUT=3.3V
VOUT=3.3V
140

120

100 VIN=2.4V
VOUT=5V
80

60

40 VIN=3.6V
20 VOUT=5V
0
1 10 100 1000
Output Current (mA)
Fig. 23 Switching Frequency vs. Output Current Fig. 24 LX Switching Waveform

Rev.2.01 11/06/2003 www.SiliconStandard.com 8 of 16

 SS6610/11
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

LX Pin Waveform
VIN=2.4V Loading: 1mA 200mA
VOUT=3.3V
Inductor Current
Loading=200mA
VIN=2.4V
VOUT=3.3V VOUT: AC Couple

VOUT AC Couple

Fig. 25 Heavy Load Waveform Fig. 26 Load Transient Response

VIN
VIN=2.0V~3.0V V SHDN
VOUT=3.3V, IOUT=100mA

VOUT
VOUT VOUT=3.3V
CIN=COUT=47F

Fig. 27 Line Transient Response Fig. 28 Exiting Shutdown

V SHDN
V SHDN

VOUT VOUT
VOUT=3.3V VOUT=5.0V
CIN=COUT=100F CIN=COUT=47F

Fig. 29 Exiting Shutdown Fig. 30 Exiting Shutdown

Rev.2.01 11/06/2003 www.SiliconStandard.com 9 of 16

 SS6610/11
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

V SHDN

VOUT
VOUT=5.0V
CIN=COUT=100F

Fig. 31 Exiting Shutdown

BLOCK DIAGRAM

OUT
SHDN - OUT
Minimum + C2 C3
Off-Time Q1 0.1F 47F
One Shot
LX L
VIN
Q2 47H
+ C1
F/ F 47F
S Q GND
R
One Shot -
+ Mirror
Max. On-Time

- FB
+
LBO REF
+ Reference
Voltage C4
-
0.1F

LBI

Rev.2.01 11/06/2003 www.SiliconStandard.com 10 of 16


PIN DESCRIPTIONS
PIN 1: FB- Connecting to OUT to get +3.3V
output, connecting to GND to get
+5.0V output, or using a resistor
network to set the output voltage
from +1.8V to +5.5V.
PIN 2: LBI- Low-battery comparator input. In-
ternally set at +1.23V to trip.
PIN 3: LBO- Open-drain low battery comparator
output. Output is low when VLBI is
<1.23V. LBO is high impedance
during shutdown.
APPLICATION INFORMATION
Overview
The SS6610/11 series are high-efficiency, step-up DC/DC
converters, featuring a built-in synchronous
rectifier, which reduces size and cost by eliminating
the need for an external Schottky diode. The start-up
voltage of the SS6610 and SS6611 is as low as
0.8V and it operates with an input voltage down
to 0.7V. Quiescent supply current is only 20A.
The internal P-MOSFET on-resistance is typically
0.3 to improve overall efficiency by minimizing AC
losses. The output voltage can be easily set; by two
external resistors for 1.8V to 5.5V; connecting FB
to OUT to get 3.3V; or connecting to GND to get
5.0V. The peak current of the internal switch is fixed
at 1.0A (SS6610) or 0.65A (SS6611) for design
flexibility. The current limits of the SS6610 and SS6611
are 1.0A and 0.65A respectively. The lower current
limit allows the use of a physically smaller inductor in
space-sensitive applications.
PFM Control Scheme
A key feature of the SS6610 series is a unique
minimum-off-time, constant-on-time, current-limited,
pulse-frequency-modulation (PFM) control scheme
(see BLOCK DIAGRAM) with ultra-low quiescent
Rev.2.01 11/06/2003 www.SiliconStandard.com
SS6610/11
PIN 4: REF- 1.23V reference voltage. Bypass
with a 0.1F capacitor.
PIN 5: SHDN- Shutdown input. High=operating,
low=shutdown.
PIN 6: GND- Ground
PIN 7: LX- N-channel and P-channel power
MOSFET drain.
PIN 8: OUT- Power output. OUT provides boot-
strap power to the IC.
current. The peak current of the internal N-MOSFET
power switch can be fixed at 1.0A SS6610) or
0.65A (SS6611). The switch frequency depends on
either loading conditions or input voltage, and can
range up to 500KHz. It is governed by a pair of one-
shots that set a minimum off-time (1s ) and a
maximum on-time (4s).
Synchronous Rectification
Using the internal synchronous rectifier eliminates
the need for an external Schottky diode, reducing
the cost and board space. During the cycle of off-
time, the P-MOSFET turns on and shuts the N-
MOSFET off. Due to the low turn-on resistance
of the MOSFET, the synchronous rectifier signif-
cantly improves efficiency without an additional ex-
ternal Schottky diode. Thus, the conversion effi-
ciency can be as high as 93%.
Reference Voltage
The reference voltage (REF) is nominally 1.23V for
excellent T.C. performance. In addition, the REF pin can
source up to 100A to external circuit with good load
regulation (<10mV). A bypass capacitor of 0.1F is
required for proper operation and good performance.
11 of 16

Shutdown
The whole circuit is shutdown when V SHDN is low. In
shutdown mode, the current can flow from the battery
to the output due to the body diode of the P-MOSFET.
VOUTfalls to approximately (Vin - 0.6V) and LX remains
high impedance. The capacitance and load at OUT de-
termine the rate at which VOUT decays. Shutdown
can be pulled as high as 6V. Regardless of the volt-
age at OUT.
Selecting the Output Voltage
VOUT can be simply set to 3.3V/5.0V by connecting the
FB pin to OUT/GND due to the use of an internal resis-
tor divider in the IC (Fig.32 and Fig.33). In order to
adjust output voltage, a resistor divider is connected
to VOUT, FB, GND (Fig.34). Vout can be calculated
by the following equation:
R5=R6 [(VOUT / VREF )-1] .....................................(1)
where V REF =1.23V and VOUT ranges from 1.8V to
5.5V. The recommended R6 is 240k.
Low-Battery Detection
The SS6610 series contains an on-chip comparator with
50mV internal hysteresis (REF, REF+50mV) for low
battery detection. If the voltage at LBI falls below the
internal reference voltage, LBO ( an open-drain out-
put) sinks current to GND.
Component Selection
1. Inductor Selection
An inductor value of 22H performs well in most
applications. The SS6610 series also work with
inductors in the 10H to 47H range. An inductor
with higher peak inductor current creates a higher
output voltage ripple (IPEAKoutput filter capaci-
tor ESR). The inductors DC resistance signifi-
cantly affects efficiency. We can calculate the
maximum output current as follows:
VIN VOUT VIN
IOUT(MAX ) = ILIM t OFF
VOUT 2L
Rev.2.01 11/06/2003 www.SiliconStandard.com
SS6610/11
(2)
where IOUT(MAX)=maximum output current in
amps
VIN=input voltage
L=inductor value in H
=efficiency (typically 0.9)
tOFF=LX switch off-time in s
ILIM=1.0A or 0.65A
2. Capacitor Selection
The output ripple voltage is related to the peak
inductor current and the output capacitor ESR.
Besides output ripple voltage, the output ripple
current may also be of concern. A filter capacitor
with low ESR is helpful to the efficiency and the
steady state output current of the SS6610 series.
Therefore a NIPPON MCM Series tantalum
capacitor of 100F/6V is recommended. A smaller
capacitor (down to 47F with higher ESR) is ac-
ceptable for light loads or in applications that can
tolerate higher output ripple.
3. PCB Layout and Grounding
Since the SS6610/11s switching frequency can
range up to 500kHz, the SS6610/11 can be very
sensitive. Careful printed circuit layout is im-
portant for minimizing ground bounce and noise.
The OUT pin should be as clear as possible,
and the GND pin should be placed close to the
ground plane. Keep the ICs GND pin and the
ground leads of the input and output filter capaci-
tors less than 0.2in (5mm) apart. In addition,
keep all connection to the FB and LX pins as
short as possible. In particular, when using ex-
ternal feedback resistors, locate them as close
to the FB as possible. To maximize output power
and efficiency, and minimize output ripple voltage,
use a ground plane and solder the ICs GND di-
rectly to the ground plane. Fig. 35 to 37 are the
recommended layout diagrams.
12 of 16
 SS6610/11

Ripple Voltage Reduction pacitor results in a stable output voltage. Fig.38

Two or three parallel output capacitors can sig- shows the application circuit with the above fea-
nificantly improve the output ripple voltage of the tures. Fig.39 to Fig.46 show the performance of
SS6610/11. The addition of an extra input ca- Fig. 38.

APPLICATION EXAMPLES
VIN VIN
C1 C1
L 47F 47F
22H L
22H
LX OUT VOUT LX OUT VOUT
R1 R1
C2 C3 C2 C3
LBI 0.1F 47F LBI 0.1F 47F
SHDN SHDN
R2 R2
R4 R4
REF REF
0.1F 100K 0.1F 100K
LBO LBO
C4 LOW BATTERY C4 LOW BATTERY
GND FB GND FB
OUTPUT OUTPUT
SS6610/11 SS6610/11
L: TDK SLF7045T-22OMR90 L: TDK SLF7045T-22OMR90
C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER
Fig. 32. VOUT = 3.3V Application Circuit. Fig. 33. VOUT = 5.0V Application Circuit.

VIN
L
C1
22H 47F

VOUT
LX OUT
R1 C2
C3
0.1F
LBI 47F
SHDN
R2 R5
REF 100K
R4
0.1F LBO
C4 LOW BATTERY
GND FB OUTPUT
SS6610/11 R6

L: TDK SLF7045T-22OMR90
C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER
VOUT=VREF*(1+R5/R6)

Fig. 34 An Adjustable Output Application Circuit

Rev.2.01 11/06/2003 www.SiliconStandard.com 13 of 16

 SS6610/11
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J
IIIIIIIIIIIIIIIIII9915H,J

Fig. 35. Top layer Fig. 36. Bottom layer Fig. 37. Placement

L1 22H
VIN + + C3
VIN C1 C2 0.1F VOUT
100F 100F

R1 R3 R4 + + + +
R5 C5 C6 C7 C8
100K 8
1 FB OUT 0.1F 100F 100F 100F
R2 R6 2 LBI LX 7
3 LBO 6 R7
GND 10k
4 5
REF SHDN ShutDown
LBI
LBO SS6610/11
C4
100nF
R5=0, R6=open; for VOUT=3.3V
R5=open, R6=0; for VOUT=5.0V
VOUT=1.23(1+R5/R6); for adjustable output voltage
L1: TDK SLF7045T-22OMR90
C1~C2, C6~8: NIPPON Tantalum Capacitor 6MCM107MCTER

Fig. 38 SS6610/11 application circuit with small ripple voltage.

100 60
95
VIN=3.6V SS6610 (I LIMIT =1A)
90
50
85
VIN=3.6V
Ripple Voltage (mV)

80
40
Efficiency (%)

75 VIN=2.4V
70
65 30
60
55 SS6610 (ILIMIT =1A)
20
50
VIN=2.4V
45 VOUT=5.0V VOUT=5.0V
10
VIN=1.2V
40 VIN=1.2V L=22H
L=22H
35
30 0
0.01 0.1 1 10 100 1000 0 100 200 300 400 500 600 700

Output Current (mA) Output Current (mA)

Fig. 39 Efficiency (ref. to Fig.38) Fig. 40 Ripple Voltage (ref. to Fig.38)

Rev.2.01 11/06/2003 www.SiliconStandard.com 14 of 16

 SS6610/11

60 60
95
VIN=3.6V SS6611 (I LIMIT =0.65A)
90
50
85

Ripple Voltage (mV)

80 VIN=3.6V
75
Efficiency (%)

40
70 VIN=2.4V
65
30
60
55
SS6611 (I LIMIT =0.65A)
50 20
45
40 VOUT=5.0V VIN=2.4V VOUT=5.0V
VIN=1.2V 10
35
L=22H VIN=1.2V L=22H
30
25 0
0.01 0.1 1 10 100 1000 0 100 200 300 400 500

Output Current (mA) Output Current (mA)

Fig. 41 Efficiency (ref. to Fig.38) Fig. 42 Ripple Voltage (ref. to Fig.38)

100 50

95
VIN=2.4V 45
SS6610 (ILIMIT =1A)
90
40
85
Ripple Voltage (mV)
35
Efficiency (%)

80
30
75

70 25

65 VIN=1.2V 20 VIN=2.4V
60
15
55 VOUT=3.3V
SS6610 (I LIMIT =1A) 10 VOUT=3.3V
50 VIN=1.2V
L=22H 5 L=22H
45

40 0
0.01 0.1 1 10 100 1000 0 50 100 150 200 250 300 350 400 450 500 550 600

Output Current (mA) Output Current (mA)

Fig. 43 Efficiency (ref. to Fig.38) Fig. 44 Ripple Voltage (ref. to Fig.38)

100 35

95 SS6611 (I LIMIT =0.65A)

30
90

85
Ripple Voltage (mV)

25
Efficiency (%)

80
VIN=2.4V
75 20
70 VIN=2.4V
65 15

60 SS6611 (I LIMIT =0.65A) 10

55
VOUT=3.3V VOUT=3.3V
50
VIN=1.2V
VIN=1.2V 5
45 L=22H L=22H
40 0
0.01 0.1 1 10 100 1000 0 50 100 150 200 250 300 350 400

Output Current (mA) Output Current (mA)

Fig. 45 Efficiency (ref. to Fig.38) Fig. 46 Ripple Voltage (ref. to Fig.38)

Rev.2.01 11/06/2003 www.SiliconStandard.com 15 of 16

 SS6610/11

PHYSICAL DIMENSION

8 LEAD MSOP (unit: mm)

D SYMBOL MIN MAX

A1 -- 0.20
A2 0.76 0.97
E b 0.28 0.38
E1
C 0.13 0.23
D 2.90 3.10
E 4.80 5.00
e
E1 2.90 3.10
A2
e 0.65
C
L 0.40 0.66
A1

b L

Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.

Rev.2.01 11/06/2003 www.SiliconStandard.com 16 of 16