ANALOGUE DEE16J

SECTION A: ANALOGUE ELECTRONICS II

ANSWER ANY TWO QUESTIONS FROM THIS SECTION

Q1. (a) Draw the V-I characteristics of an SCR indicating each of the following:
i. Holding current
ii. Latching current
iii. Reverse-break over voltage
iv. Forward break over voltage

(10mks)
(b) Figure 1 shows a symbol of a semiconductor device

i. State the name of the symbol

ii. Draw the equivalent of the symbol in b (1) and use it to explain the operation of the device

(10mks)
Q2. (a) A unijunction transistor used to trigger an SCR has rB1=4k, rB2=2.5k. Determine
i. The value of intrinsic standoff ratio
ii. The peak voltage if VBB of 15V was applied at a barrier potential of 0.7V

(4mks)
(b) The intrinsic standoff ratio of a UJT is 0.6. A measurement of the interbase resistance indicates
7k. Determine the UJTs static values.

(4mks)
(c) Define the following terms as applied in SCR:
i. holding current
ii. latching current
iii. Circuit fusing current

(6mks)
(d) Explain any three ways in which an SCR can be triggered.

(6mks)
Q3. (a) Draw the V-I characteristics of a varacter diode and explain its operation

(7mks)
(b) With the aid of a clearly labelled V-I characteristic of a UJT, explain the following regions:
i. cut off region
ii. negative resistace region
iii Saturation region

(13mks)