Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 3
3.1 E
If a o were to increase, the bandgap energy Eu x exp j kx t
would decrease and the material would begin
to behave less like a semiconductor and more This equation may be written as
like a metal. If a o were to decrease, the
bandgap energy would increase and the u x 2 u x 2mE
material would begin to behave more like an k 2 u x 2 jk 2 u x 0
insulator.
x x 2
_______________________________________

3.2 Setting u x u1 x for region I, the

Schrodinger's wave equation is: equation
2 2 x, t becomes:
V x x, t
2m x 2
d 2 u1 x du1 x
2 jk
k 2 2 u1 x 0
x, t dx 2 dx
j where
t
Assume the solution is of the form: 2mE
2
E 2
x, t u x exp j kx t Q.E.D.
In Region II, V x VO . Assume the
Region I: V x 0 . Substituting the same
assumed solution into the wave equation, we form of the solution:
obtain: E
2 E x, t u x exp j kx t
jku x exp j kx t
2m x Substituting into Schrodinger's wave
equation, we find:
u x E
exp j kx t 2 E
x jk 2 u x exp j kx t
2m

jE E u x E
j u x exp j kx t 2 jk
x
exp j kx t

which becomes
2 E 2 u x E
jk 2 u x exp j kx t exp j kx t
2m x 2

u x E E
2 jk exp j kx t VO u x exp j kx t
x

2 u x E
Eu x exp j kx
E
exp j kx t t
x 2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
This equation can be written as: 2 jk j k A exp j k x
u x 2 u x j k B exp j k x
k 2 u x 2 jk
x x 2
k 2 2 A exp j k x
2mVO 2mE B exp j k x 0
u x u x 0 Combining terms, we obtain
2 2
Setting u x u 2 x for region II, this 2

2k k 2 2k k k 2 2
equation becomes
A exp j k x
d 2u 2 x du 2 x
2 jk
dx 2 dx
2 2k k 2 2k k k 2 2
B exp j k x 0
2mV
k 2 O u 2 x 0
2 2 We find that
00 Q.E.D.
where again For the differential equation in u 2 x and
2mE the
2 Q.E.D. proposed solution, the procedure is exactly
2
the same as above.
_______________________________________
_______________________________________

3.4
We have the solutions
u1 x A exp j k x
3.3 B exp j k x
We have
for 0 x a and
u 2 x C exp j k x
d 2 u1 x du x

2 jk 1 k 2 2 u1 x 0 D exp j k x
dx 2 dx
for b x 0 .
Assume the solution is of the form:
u1 x A exp j k x
The first boundary condition is
u1 0 u 2 0
B exp j k x
The first derivative is
du1 x which yields
j k A exp j k x A B C D 0
dx
The second boundary condition is
j k B exp j k x du1

du 2
and the second derivative becomes dx x 0 dx x 0
which yields
d 2 u1 x k A k B k C
j k A exp j k x
2
2 kD 0
dx
The third boundary condition is
u1 a u 2 b
j k B exp j k x
2
which yields
Substituting these equations into the
differential equation, we find
A exp j k a B exp j k a
k A exp j k x
2

C exp j k b
k B exp j k x
2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
3.7
D exp j k b sin a
P cos a cos ka
and can be written as a
Let ka y , a x
A exp j k a B exp j k a Then
C exp j k b P
sin x
cos x cos y
x
D exp j k b 0 Consider
d
of this function.
The fourth boundary condition is dy
du1

du 2 d
dy
1

P x sin x cos x sin y
dx x a dx x b
which yields We find
j k A exp j k a
dx dx
j k B exp j k a P 1 x sin x x cos x
2 1

dy dy
j k C exp j k b
dx
j k D exp j k b sin x
dy
sin y

and can be written as Then

k A exp j k a
k B exp j k a dx 1 cos x
P 2 sin x sin x sin y
k C exp j k b dy x x
k D exp j k b 0 For y ka n , n 0, 1, 2, ...
_______________________________________ sin y 0
So that, in general,
3.5 dx d a d
(b) (i) First point: a 0
dy d ka dk
Second point: By trial and error,
And
a 1.729
(ii) First point: a 2 2mE

Second point: By trial and error, 2
a 2.617 So
_______________________________________ 1 / 2
d 1 2mE 2m dE
2
2
dk 2 dk
This implies that
d dE n
0 for k
dk dk a
_______________________________________

3.6
(b) (i) First point: a
Second point: By trial and error,
a 1.515
(ii) First point: a 2 3.8
Second point: By trial and error, (a) 1 a
a 2.375
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
2 m o E1
a
2

E1
2 2


2 1.054 10 34 2 3.9
(a) At ka , 1 a
2m o a 2
2 9.11 10 31 4.2 10 10 2

2 m o E1
3.4114 10 19 J a
From Problem 3.5 2
2 a 1.729
E1
2 1.054 10 34 2
2m o E 2
a 1.729

2 9.11 10 31 4.2 10 10 2

2 3.4114 10 19 J

E2
1.729 2 1.054 10 34 2 At ka 0 , By trial and error,
o a 0.859

2 9.11 10 31 4.2 10 10 2

1.0198 10 18 J
Eo
0.859 2 1.054 10 34 2
E E 2 E1

2 9.11 10 31 4.2 10 10 2

2.5172 10 19 J
1.0198 10 18 3.4114 10 19
E E 1 E o
6.7868 10 19 J
6.7868 10 19
or E 4.24 eV 3.4114 10 19 2.5172 10 19
1.6 10 19 8.942 10 20 J
(b) 3 a 2
8.942 10 20
or E 0.559 eV
2m o E 3 1.6 10 19
a 2
2 (b) At ka 2 , 3 a 2

E3
2 2 1.054 10 34 2 2m o E 3
a 2

2 9.11 10 31
4.2 10
10 2
2
1.3646 10 18 J
E3
2 2 1.054 10 34 2
From Problem 3.5,
4 a 2.617
2 9.11 10 31 4.2 10 10 2

1.3646 10 18 J
2m o E 4 At ka . From Problem 3.5,
a 2.617
2 2 a 1.729

E4
2.617 2 1.054 10 34 2 2m o E 2
a 1.729

2 9.11 10 31
4.2 10
10 2
2
2.3364 10 18 J
E2
1.729 2 1.054 10 34 2
E E 4 E 3

2 9.11 10 31 4.2 10 10 2

2.3364 10 18 1.3646 10 18 1.0198 10 18 J

9.718 10 19 J E E 3 E 2
9.718 10 19
or E 6.07 eV 1.3646 10 18 1.0198 10 18
1.6 10 19
3.4474 10 19 J
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
3.4474 10 19
or E
1.6 10 19
2.15 eV
E4
2.375 2 1.054 10 34 2
_______________________________________
2 9.11 10 31 4.2 10 10 2

1.9242 10 18 J
E E 4 E 3

1.9242 10 18 1.3646 10 18
5.597 10 19 J
5.597 10 19
3.10 or E 3.50 eV
1.6 10 19
(a) 1 a _____________________________________
2 m o E1
a
2

E1
2 1.054 10 34 2

2 9.11 10 31 4.2 10 10 2

3.4114 10 19 J
3.11
From Problem 3.6, 2 a 1.515 (a) At ka , 1 a
2m o E 2 2m o E1
2
a 1.515 a
2

E2
1.515 2 1.054 10 34 2 E1
2 1.054 10 34 2

2 9.11 10 31 4.2 10 10 2

2 9.11 10 31 4.2 10 10 2

7.830 10 19 J 3.4114 10 19 J
E E 2 E1 At ka 0 , By trial and error,
o a 0.727
19 19
7.830 10 3.4114 10 2m o E o
4.4186 10 19 J a 0.727
19
2
4.4186 10
or E 2.76 eV
1.6 10 19
Eo
0.727 2 1.054 10 34 2
(b) 3 a 2

2 9.11 10 31 4.2 10 10 2

2m o E 3
2
a 2 1.8030 10 19 J
E E1 E o

E3
2 2 1.054 10 34 2 3.4114 10 19 1.8030 10 19

2 9.11 10 31 4.2 10 10 2
1.6084 10 19 J
or
1.3646 10 18 J
1.6084 10 19
From Problem 3.6, 4 a 2.375 E 1.005 eV
1.6 10 19
2m o E 4 (b) At ka 2 , 3 a 2
a 2.375
2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
2m o E 3 d 2E d 2E
a 2 curve A curve B
2 dk 2 dk 2
so that m * curve A m * curve B

E3
2 2 1.054 10
34 2 _______________________________________

2 9.11 10 31
4.2 10 10 2
3.14
1.3646 10 J 18 The effective mass for a hole is given by
1
At ka , From Problem 3.6, 1 d 2E
m 2
*
2 a 1.515 p
dk 2

2m o E 2 We have that
a 1.515 d 2E 2
2 2
curve A d E2 curve B
dk dk

E2
1.515 2 1.054 10 34 2 so that m *p curve A m *p curve B

2 9.11 10 34 4.2 10 10 2 _______________________________________

7.830 10 19 J 3.15
E E 3 E 2 dE
Points A,B: 0 velocity in -x
dk
direction
1.3646 10 18 7.830 10 19
dE
5.816 10 19 J Points C,D: 0 velocity in +x
dk
5.816 10 19 direction
or E 3.635 eV
1.6 10 19 d 2E
_______________________________________ Points A,D: 0
dk 2
negative effective mass
d 2E
Points B,C: 0
dk 2
positive effective mass
3.12 _______________________________________
For T 100 K,

E g 1.170
4.73 10 100 4 2

3.16
636 100 For A: E C i k 2
E g 1.164 eV At k 0.08 10 10 m 1 , E 0.05
T 200 K, E g 1.147 eV eV
Or
T 300 K, E g 1.125 eV
E g 1.097 eV

E 0.05 1.6 10 19 8 10 21 J
T 400 K,
T 500 K, E g 1.066 eV
So 8 10 21 C1 0.08 1010 2

T 600 K, E g 1.032 eV C1 1.25 10 38

_______________________________________
Now m
2


1.054 10 34 2

3.13 2C1 2 1.25 10 38

The effective mass is given by 4.44 10 31
kg
1
1 d E 2
4.4437 10 31
m * 2 2
or m mo
dk 9.11 10 31
We have m 0.488 m o
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
For B: E C i k 2 (a) (i) E h
At k 0.08 10 10 m 1 , E 0.5 or

E 1.42 1.6 10 19
eV h 6.625 10 34
Or
3.429 10 14 Hz

E 0.5 1.6 10 19 8 10 20 J hc c 3 10 10
So 8 10 20

C1 0.08 10 10
2 (ii)
E 3.429 10 14
C1 1.25 10 37 8.75 10 5 cm 875 nm
2 1.054 10 34
2
(b) (i)

E 1.12 1.6 10 19
Now m
2C1 2 1.25 10 37 h 6.625 10 34
4.44 10 32
kg 2.705 10 14 Hz
4.4437 10 32 c 3 10 10
or m
mo (ii)
9.11 10 31 2.705 10 14
m 0.0488 m o 1.109 10 4 cm 1109
nm
_______________________________________
_______________________________________
3.17
3.19
For A: E E C 2 k 2 (c) Curve A: Effective mass is a constant
Curve B: Effective mass is positive

0.025 1.6 10 19 C 2 0.08 10 10 2 around k 0 , and is negative

C 2 6.25 10 39 around k .
2
m
2 1.054 10 34


2
_______________________________________
2C 2 2 6.25 10 39 3.20
E E O E1 cos k k O
31
8.8873 10 kg
8.8873 10 31 Then
or m mo
9.11 10 31 dE
E1 sin k k O
m 0.976 m o dk
For B: E E C 2 k 2 E1 sin k k O
and

0.3 1.6 10 19
C 0.08 10 2
10 2
d 2E
E1 2 cos k k O
2
C 2 7.5 10 38 dk

m

2 1.054 10 34

2

2C 2 2 7.5 10 38
32
7.406 10 kg Then
7.406 10

32
1 1 d 2E E1 2
or m mo
9.11 10 31 m * 2 dk 2 k ko 2

m 0.0813 m o or
_______________________________________ 2
m*
3.18 E1 2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
_______________________________________ 2 X 2Y 2Z
YZ XZ XY
3.21
x 2 y 2 z 2

(a)
m dn
4 2 / 3 mt ml
2
1/ 3

2mE
XYZ 0

2
4 2 / 3 0.082m o 1.64m o
2 1/ 3
Dividing by XYZ , we obtain

m dn 0.56m o
1 2 X 1 2 Y 1 2 Z 2mE
(b) 2 0
3 2 1 2 1 X x 2 Y y 2 Z z 2

Let
m cn
m t ml 0.082m o 1.64m o
1 2 X 2 X

24.39 0.6098

2 k x2 k x2 X 0
mo mo X x x 2

The solution is of the form:

X x A sin k x x B cos k x x

m cn 0.12m o
_______________________________________
Since x, y , z 0 at x 0 , then
3.22 X 0 0

(a) m dp m hh 3/ 2
m lh
3/2 2/3 so that B 0 .
Also, x, y , z 0 at x a , so that
X a 0 . Then k x a n x where

0.45m o
3/ 2
0.082m o
3/ 2 2/3
n x 1, 2, 3, ...
0.30187 0.02348
2/3
mo Similarly, we have
m
0.473m o 1 2Y 1 2Z
dp k y2 and 2 k z2
Y y 2
Z z
m hh 3 / 2 mlh 3 / 2
(b) m From the boundary conditions, we find
cp
m hh 1 / 2 mlh 1 / 2 k y a n y and k z a n z
where

0.45 3 / 2 0.082 3 / 2 mo n y 1, 2, 3, ... and
0.45 1 / 2 0.082 1 / 2

n z 1, 2, 3, ...
m cp 0.34m o
From the wave equation, we can write
_______________________________________
2mE
k x2 k y2 k z2 0
3.23 2
For the 3-dimensional infinite potential well, The energy can be written as
V x 0 when 0 x a , 0 y a , and 2

0 z a . In this region, the wave equation

2
E E nx n y nz
2m

n x2 n 2y n z2


a
is: _______________________________________

2 x, y, z 2 x, y, z 2 x, y, z 3.24

x 2
y 2
z 2 The total number of quantum states in the
3-dimensional potential well is given
2mE
x, y , z 0 (in k-space) by
2 k 2 dk 3
Use separation of variables technique, so let g T k dk a
3
x, y , z X x Y y Z z
where
Substituting into the wave equation, we have
2mE
k2
2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
We can then write
2a 1 2m n
2mE g T E dE dE
k 2 E
Divide by the "volume" a, so
Taking the differential, we obtain
1 2m n
g E
E

1 1 1 1 m
dk 2m dE dE
2 E 2 E
Substituting these expressions into the density
of states function, we have
a 3
2mE 1 m
g T E dE 3 dE So

2
2E 1 2 0.067 9.11 10 31
g E
Noting that
h

1.054 10 34 E
1.055 10 18
2 g E m 3 J 1
this density of states function can be E
simplified and written as _______________________________________
4 a 3
g T E dE 3
2m 3 / 2 E dE 3.26
h
(a) Silicon, m n 1.08m o
Dividing by a 3 will yield the density of
states so that
gc E
4 2m n 3/ 2

E Ec
4 2m
3/ 2
g E E h3
h3
_______________________________________ 4 2m n 3 / 2 E c 2 kT

3.25
gc
h3
Ec
E E c dE

For a one-dimensional infinite potential well,

2m n E
2

n 2 2
2
k2

4 2m n 3/2
2
E Ec
3/ 2
E c 2 kT

a h3 3 Ec
Distance between quantum states

k n 1 k n n 1

n




4 2m n
3/ 2
2
2kT
3/ 2
3
a a a h 3
Now

g T k dk
2 dk


4 21.08 9.11 10 31 3/ 2

2
2kT
3/ 2


a
6.625 10 34 3 3

Now
7.953 10 55 2kT 3/ 2

1 (i) At T 300 K, kT 0.0259 eV

k 2m n E


0.0259 1.6 10 19
1 1 2m n
dk dE 4.144 10 21 J
2 E Then
Then

g c 7.953 10 55 2 4.144 10 21 3/ 2

3
6.0 10 25 m
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
or g c 6.0 10 19 cm 3

(ii) At T 400 K,
4 2m p 3/ 2
2 E
E E
3/ 2

400 h 3
3
kT 0.0259
E 3 kT

300
4 2m
3/ 2
2

3kT
p
0.034533 eV 3

3/ 2

h 3
0.034533 1.6 10 19
5.5253 10 21 J

4 2 0.56 9.11 10 31 3/2
2
3kT
3/ 2

Then 6.625 10 34 3
3

2.969 10 55 3kT

3/ 2
3/ 2
g c 7.953 10 55 2 5.5253 10 21
(i)At T 300 K, kT 4.144 10 21 J
3
9.239 10 25 m
or g c 9.24 10 19 cm

3

g 2.969 10 55 3 4.144 10 21 3/ 2

(b) GaAs, m 0.067 m o 3

n
4.116 10 25 m
or g 4.12 10 19 cm

3

4 2 0.067 9.11 10 31
3/ 2
2
2kT (ii)At T 400 K, kT 5.5253 10 21
3/ 2
gc
6.625 10 34 3 3 J

1.2288 10 54 2kT 3/ 2

g 2.969 10 55 3 5.5253 10 21 3/ 2

3
6.337 10 25 m
(i) At T 300 K, kT 4.144 10 21 J
or g 6.34 10 19 cm 3

g c 1.2288 10 54 2 4.144 10 21 3/ 2 (b) GaAs, m p 0.48m o

9.272 10 23 m 3
g

4 2 0.48 9.11 10 31 3/ 2
2
3kT
3/ 2

or g c 9.27 1017 cm 3 6.625 10 34 3

3
(ii) At T 400 K,
2.3564 10 55 3kT 3/ 2

kT 5.5253 10 21 J

g c 1.2288 10 54 2 5.5253 10 21 3/ 2

3
1.427 10 24 m
g c 1.43 1018 cm 3 (i)At T 300 K, kT 4.144 10 21 J
_______________________________________

g 2.3564 10 55 3 4.144 10 21 3/2

3.27 3
3.266 10 25 m
(a) Silicon, m p 0.56m o
or g 3.27 10 19 cm 3

g E
4 2m 3/ 2
p E E (ii)At T 400 K,
3
h kT 5.5253 10 21 J

4 2m p 3/ 2 E

g 2.3564 10 55 3 5.5253 10 21 3/ 2
g
h3
E 3 kT
E E dE
5.029 10 25 m 3

or g 5.03 10 19 cm 3
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
_______________________________________
3.28

(a) g c E
4 2m n
3/ 2

E E
3.30
Plot
3 c
h _______________________________________

4 21.08 9.11 10 31 3/ 2

E Ec
3.31
gi! 10!
6.625 10 34 3 (a) Wi
N i ! g i N i ! 7!10 7 !
1.1929 10 56 E Ec
For E E c ; gc 0

10 9 8 7!
10 9 8 120
E E c 0.1 eV; g c 1.509 10 46 m 7! 3! 3 21
3 1 (b) (i)
J
E E c 0.2 eV; Wi
12!

121110!
2.134 10 46
3 1
10!12 10! 10! 21
m J
66
E E c 0.3 eV; 2.614 10 46 (ii)
m 3 J 1
Wi
12!

12 1110 9 8!
E E c 0.4 eV; 3.018 10 46
8!12 8! 8! 4 3 21
m 3 J 1
495

(b) g

4 2m p 3/ 2

E E
_______________________________________

h3 3.32
1
f E


4 2 0.56 9.11 10 31
3/ 2

E E 1 exp
E EF

6.625 10 34 3 kT
1
4.4541 10 55 E E (a) E E F kT , f E
1 exp1
For E E ; g 0
f E 0.269
E E 0.1 eV; g 5.634 10 45 m
(b) E E F 5kT ,
3 J 1
1
E E 0.2 eV; f E
7.968 10 45 1 exp 5
f E 6.69 10 3
m 3 J 1

E E 0.3 eV; 9.758 10 45 (c) E E F 10kT ,

m 3 J 1
1
f E
E E 0.4 eV; 1.127 10 46 1 exp10
m 3 J 1 f E 4.54 10 5
_______________________________________ _______________________________________
3.29 3.33

(a)
gc

m 3/ 2
n

1.08

3/ 2

2.68 1 f E 1
1
g mp 3/ 2
0.56
1 exp
E EF

(b) kT
gc

m
3/ 2
n

0.067

3/2

0.0521
or

g mp
3/2
0.48
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
1 0.25
1 f E E E ; 1 f F exp
EF E 0.0259
1 exp
kT 6.43 10 5
(a) E F E kT , f E 0.269
1 E
kT
;
(b) E F E 5kT , 1 f E 6.69 10 3 2
0.25 0.0259 2
(c) E F E 10kT , 1 f F exp
0.0259
1 f E 4.54 10 5
_______________________________________ 3.90 10 5
E kT ;
0.25 0.0259
1 f F exp
3.34 0.0259
E EF 2.36 10 5
(a) f F exp
kT 3kT
E Ec ; E ;
2
0.30 6
f F exp 9.32 10
0.0259 0.25 3 0.0259 2
1 f F exp
kT 0.0259
Ec ;
2 1.43 10 5
0.30 0.0259 2 E 2kT ;
f F exp
0.0259
5.66 10 6
0.25 2 0.0259
1 f F exp
E c kT ; 0.0259
0.30 0.0259 8.70 10 6
f F exp
0.0259 _______________________________________
3.43 10 6
3kT
Ec ;
2 3.35
0.30 3 0.0259 2 E EF E c kT E F
f F exp f F exp exp
0.0259 kT kT
2.08 10 6 and
E c 2kT ; EF E
1 f F exp
0.30 2 0.0259 kT
f F exp
0.0259
1.26 10 6 E F E kT
exp
1 kT
1 f F 1
(b)
1 exp
E EF E c kT E F
So exp
kT kT

EF E
exp
kT
E F E kT
exp
kT
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
Then E c kT E F E F E kT E F 2.35 eV
E c E (b) For 13 electrons, the 13th electron
Or E F E midgap occupies the quantum state
2 n x 3, n y 2, n z 3 ; so
_______________________________________

3.36
E13
1.054 10 3 2 3
34 2 2 2 2 2

n 29.11 10 12 10
2 2 2
31 10 2
En
2ma 2 9.194 10 19 J
For n 6 , Filled state
9.194 10 19
E6
1.054 10 6 34 2 2 2 or E13
1.6 10 19
5.746 eV
2 9.11 10 12 10 31 10 2
The 14th electron would occupy the quantum
1.5044 10 18 J state n x 2, n y 3, n z 3 . This state is
at the same energy, so
1.5044 10 18
or E 6 9.40 eV E F 5.746 eV
1.6 10 19
_______________________________________
For n 7 , Empty state

E7
1.054 10 7 34 2 2 2
3.38

2 9.11 10 12 10 31 10 2 The probability of a state at E1 E F E

being occupied is
2.048 10 18 J
2.048 10 18 1 1
or E7 12.8 eV f 1 E1
1.6 10 19 E1 E F E

1 exp 1 exp
Therefore 9.40 E F 12.8 eV kT kT
_______________________________________ The probability of a state at E 2 E F E
3.37 being empty is
1
(a) For a 3-D infinite potential well 1 f 2 E2 1
2
E EF
2mE

n x2 n 2y n z2

1 exp 2
kT

2
a
For 5 electrons, the 5th electron occupies
the quantum state n x 2, n y 2, n z 1 ; E
exp
so 1 kT
2 1
E5
2 2
2m

n x n 2y n z2

1 exp
E
1 exp
E

a kT kT
or
1
1 f 2 E2

1.054 10 2 2 1
34 2 2 2 2 2
1 exp
E
kT

2 9.11 10 12 10 31 10 2

so f 1 E1 1 f 2 E 2
Q.E.D.
3.761 10 19 J _______________________________________
3.761 10 19
or E5 2.35 eV
1.6 10 19
3.39
For the next quantum state, which is empty,
(a) At energy E1 , we want
the quantum state is n x 1, n y 2, n z 2 .
This quantum state is at the same energy, so
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
0.25
1 1 0.02 exp
kT
E EF E1 E F
exp 1 1 exp
kT kT
0.01
1
E1 E F 0.25 1
1 exp or exp
kT 0.02 50
kT
0.25
This expression can be written as ln 50
E EF kT
1 exp 1
kT
or

1 0.01
E1 E F 0.25 T
exp kT 0.063906 0.0259
kT ln 50 300
or which yields T 740 K
E EF _______________________________________
1 0.01 exp 1
kT 3.41
Then (a)
E1 E F kT ln 100
1
or f E 0.00304
E1 E F 4.6kT .15 7.0
7
1 exp
(b) 0.0259
At E E F 4.6kT , or 0.304%
(b) At T 1000 K, kT 0.08633 eV
1 1 Then
f E1
E EF 1 exp 4.6
1 exp 1 f E
1
0.1496
kT
7.15 7.0
which yields 1 exp
0.08633
f E1 0.00990 0.01 or 14.96%
_______________________________________ (c)
1
3.40 f E 0.997
(a) 6.85 7.0
1 exp
0.0259
E EF 5.80 5.50 or 99.7%
f F exp exp (d)
kT 0.0259 1
At E E F , f E for all
9.32 10 6 2
700 temperatures
(b) kT 0.0259 0.060433 _______________________________________
300
eV
3.42
(a) For E E1
0.30 3
f F exp 6.98 10
0.060433
EF E
(c) 1 f F exp
kT
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
1 E1 E F f E 9.32 10 6
f E exp At E E 2 ,
E1 E F kT
1 exp E F E 2 1.42 0.3 1.12 eV
kT So
Then
EF E2
f E1 exp
0.30
9.32 10
6 1 f E exp
0.0259 kT
For E E 2 ,
1.12
E F E 2 1.12 0.30 0.82 eV exp
Then 0.0259
or
1
1 f E 1 1 f E 1.66 10 19
0.82
1 exp (b) For E F E 2 0.4 ,
0.0259
or
E1 E F 1.02
eV
At E E1 ,

1 f E 1 1 exp
0.82 E1 E F 1.02
f E exp exp
0.0259 kT 0.0259
0.82 14 or
exp 1.78 10
0.0259 f E 7.88 10 18
(b) For E F E 2 0.4 eV, At E E 2 ,
E1 E F 0.72 eV
At E E1 ,
EF E2
1 f E exp
E1 E F 0.72 kT
f E exp exp
kT 0.0259 0.4
exp
or 0.0259
f E 8.45 10 13 or 1 f E 1.96 10 7
At E E 2 , _______________________________________

EF E2
1 f E exp
3.44
1
kT E EF
f E 1 exp
0.4 kT
exp
0.0259 so
or
df E
2
E EF
1 f E 1.96 10 7 1 1 exp
_______________________________________ dE kT
1 E EF
3.43 exp
(a) At E E1 kT kT
or
E1 E F 0.30
f E exp exp
kT 0.0259
or
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
1 E EF
exp 1 1
df E kT kT f E
E EF Eg
dE 2 1 exp 1 exp
E EF kT
1 exp 2kT
kT Si: E g 1.12 eV,
(a) At T 0 K, For 1
df f E
E E F exp 0 0 1 exp
1.12

2 0.0259
dE
df
E E F exp 0 or
dE
f E 4.07 10 10
df
At E E F
dE
(b) At T 300 K, kT 0.0259 eV Ge: E g 0.66 eV
df
For E E F , 0 f E
1
dE
0.66
df 1 exp
For E E F ,
dE
0 2 0.0259
or
At E E F ,
f E 2.93 10 6
1

1 GaAs: E g 1.42 eV
df 0.0259
9.65 1
dE 1 1 2 f E
1.42
1 exp
.0259
(eV) 1
2 0
or
f E 1.24 10 12
(b) Using the results of Problem 3.38, the
answers to part (b) are exactly the same as
those given in part (a).
_______________________________________

(c) At T 500 K, kT 0.04317 eV

df
For E E F , 0
dE 3.46
E EF
df
For E E F , 0
dE (a) f F exp
kT
At E E F ,
1 0.60
10 8 exp
1 kT

df 0.04317 (eV)
5.79
dE 1 1 2
or
0.60
kT

ln 10 8
1
0.60
kT 0.032572 eV
_______________________________________

ln 10 8
3.45 T
0.032572 0.0259
(a) At E E midgap , 300
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
so T 377 K
6 0.60
(b) 10 exp
kT
0.60
kT

ln 10 6
0.60
kT 0.043429

ln 10 6
T
0.043429 0.0259
300
or T 503 K
_______________________________________

3.47
(a) At T 200 K,

200
kT 0.0259 0.017267 eV
300
1
f F 0.05
E EF
1 exp
kT
E EF 1
exp 1 19
kT 0.05

E E F kT ln 19 0.017267 ln 19
0.05084 eV
By symmetry, for f F 0.95 ,
E E F 0.05084 eV
Then E 2 0.05084 0.1017 eV
(b) T 400 K, kT 0.034533 eV
For f F 0.05 , from part (a),

E E F kT ln 19 0.034533 ln 19
0.10168 eV
Then E 2 0.10168 0.2034 eV
_______________________________________