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CNY17-2,CNY17-3,CNY17-4
Unit in mm
AC Line / Digital Logic Isolator
1 6
2 5
3 4
1 : Anode
2 : Cathode
3 : N.C.
4 : Emitter
5 : Collector
6 : Base
1 2002-09-25
CNY17-2,CNY17-3,CNY17-4
Maximum Ratings (Ta = 25C)
Forward current IF 60 mA
Forward current derating IF / C 0.8 * mA / C
Peak forward current (Note) IPF 3 A
LED
2 2002-09-25
CNY17-2,CNY17-3,CNY17-4
)
Electrical Characteristics (Ta = 25
Reverse current IR VR = 3 V 10 A
Capacitance CD V = 0, f = 1 MHz 30 pF
DC forward current
hFE VCE = 5, IC = 500 A 100 200
gain
Collector-emitter
V (BR) CEO IC = 1 mA, IF = 0 70 V
breakdown voltage
Photo-transistor
Collector-base breakdown
V (BR) CBO IC = 100 A, IF = 0 70 V
voltage
Emitter-collector
V (BR) ECO IE = 100 A, IF = 0 7 V
breakdown voltage
Collector dark current ICEO VCE = 10 V, IF = 0 1 50 nA
Collector dark current ICBO VCB = 10 V, IF = 0 0.1 20 nA
Collector-emitter
CCE V = 0, f = 1 MHz 10 pF
capacitance
CNY17-2 63 125
Current
transfer CNY17-3 CTR IF = 10 mA, VCE = 5 V 100 200 %
ratio
CNY17-4 160 320
Saturation voltage VCE (sat) IF = 10 mA, IC = 2.5 mA 0.4 V
Capacitance input to
Coupled
CS V = 0, f = 1 MHz 0.8 pF
output
Isolation resistance RS V = 500 V 1011
DC isolation voltage BVS DC 1 minute 4400 V
VCE = 10 V, IC = 2 mA
Rise fall time tr / tf 5 10 s
RL = 100
Rise / fall time photo VCB = 10 V, ICB = 50 A
tr / tf 200 ns
diode RL = 100
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CNY17-2,CNY17-3,CNY17-4
IF Ta PC Ta
100 200
80 160
Allowable forward current
40 80
20 40
0 0
-20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120
IFP DR IF VF
5000 100
Pulse width 1 s Ta = 25C
3000
Ta = 25C 50
30
Allowable pulse forward current
(mA)
1000
10
500
Forward current IF
IFP (mA)
300 5
3
100
1
50
0.5
30 0.3
10 0.1
10-3 10-2 10-1 100 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF / Ta IF IFP VFP
-3.2 1000
Forward voltage temperature coefficient
500
-2.8
(mA)
300
VF / Ta (mV / C)
-2.4
IFP
100
-2.0
Pulse forward current
50
30
-1.6
10
-1.2
Pulse width 10 s
5
Repetitive
-0.8 3
frequency = 100 Hz
Ta = 25C
-0.4 1
0.1 0.3 0.5 1 3 5 10 30 50 0.6 1.0 1.4 1.8 2.2 2.6
4 2002-09-25
CNY17-2,CNY17-3,CNY17-4
IC / IF IC / IF IF
100 400
Ta = 25C Ta = 25C
VCE = 10 V VCE = 10 V
50 VCE = 0.4 V VCE = 0.4 V
300
IC / IF (%)
200
(mA)
10
Sample A
IC
100
Collector current
Sample B
3
0
1 3 10 30 100 300
0.5
0.2 IC VCE
1 3 5 10 30 50 100
60
Ta = 25C
Forward current IF (mA) 20 mA
50
(mA)
15 mA
40
IC
Collector current
30 10 mA
20
IF = 5 mA
10
0
0 2 4 6 8 10 12 14
100
VCE (sat) Ta
50
(mA)
0.5
30 10 mA
0.3
IC
5 mA
Collector-emitter saturation
10
Collector current
3 0.1
1 mA
0.05
1
0.5 0.03
0.5 mA
0.3
0.1 0.01
-60 -40 -20 0 20 40 60 80 100 -60 -40 -20 0 20 40 60 80 100
5 2002-09-25
CNY17-2,CNY17-3,CNY17-4
ICEO Ta ID RBE
10
VCE = 24 V
101
5 Ta = 100C
3
VCE = 24 V
(A)
10 V
1
100
(A)
Dark current ID
0.5
Collector dark current ICEO
0.3
5V
10-1
0.1
0.05
0.03
10-2
0.01
100k 1M 10M
10-4
0 20 40 60 80 100 120
VOUT IF 90%
300 VOUT
10%
90%
RBE
VOUT
VOUT 5V 90%
td ts 10%
0V 10%
td ts
td ts tr tf
100 tr tf
tr tf
(s)
50 ts tr
Switching time
100
30
50
(s)
30
Switching time
10 ts
10
5
tf tf
5
3
3 td
td
1 1
0.5 1 3 5 10 30 50 3M 1M 300 100 30 10k
6 2002-09-25
CNY17-2,CNY17-3,CNY17-4
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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7 2002-09-25
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