Circuit Characterization :

Transistor Characteristics
 Introduction
So far, we have treated transistors as ideal
switches
An ON transistor passes a finite amount of
current
Depends on terminal voltages
Derive current-voltage (I-V) relationships
Transistor gate, source, drain all have capacitance
I = C (DV/Dt) -> Dt = (C/I) DV
Capacitance and current determine speed
 MOS Capacitor
Gate and body form MOS capacitor
Operating modes Vg < 0
polysilicon gate

Accumulation
silicon dioxide insulator

-V +
- p-type body

Depletion (a)

Inversion 0 < V g < Vt

V+
depletion region
+
-

(b)

V g > Vt
inversion region
V++
+
- depletion region

(c)
 Terminal Voltages
Mode of operation depends on Vg, Vd, Vs
Vgs = Vg Vs
Vgd = Vg Vd
Vds = Vd Vs = Vgs - Vgd
Three regions of operation
Cutoff
Linear
Saturation
 nMOS Cutoff
No channel
Vgs < Vt
Ids = 0 Vgs = 0
+ g +
Vgd

- -
s d

n+ n+

p-type body
b
 nMOS Linear
Channel forms Vgs > Vt
g
Vgd = Vgs
+ +
Vds = Vgs-Vgd - -
s d
If Vds=0 (i.e. Vgs=Vgd) n+ n+ Vds = 0

No electrical field tending p-type body

to push current fr. d to s. b

Small positive potential Vds Vgs > Vt

Vgs > Vgd > Vt
Current flows from d to s + g +
- - Ids
s d
e- from s to d n+ n+
0 < Vds < Vgs-Vt

Ids increases with Vds p-type body

b
Similar to linear resistor
 nMOS Saturation
Channel pinches off
Ids independent of Vds
We say current saturates Vgs > Vt
g Vgd < Vt
Similar to current source +
-
+
-
s d Ids

n+ n+
Vds > Vgs-Vt
p-type body
b
 Nmos region of operation

1. Cutoff region:
VGS < VT, any value of VDS
ID = 0

2. Linear (or Resistive, or Triode) region:

VGS > VT, VDS < (VGS VT)
V
I D VGS VT DS VDS
2
W
where nCox
L
3. Saturation region:
VGS > VT, VDS > (VGS VT)

I DSAT VGS VT 2
2
W
where nCox CUTOFF region: VG < VT
L
 Example
We will be using a 0.6 m process for your project
From AMI Semiconductor
tox = 100
= 350 cm2/V*s
2.5
Vgs = 5

Vt = 0.7 V 1.5 Vgs = 4

Ids (mA)
Plot Ids vs. Vds
1
Vgs = 3
0.5

Vgs = 0, 1, 2, 3, 4, 5
Vgs = 2
Vgs = 1
0
0 1 2 3 4 5

Use W/L = 4/2 l

Vds

W 3.9 8.85 1014 W W

Cox 350 8 L 120 A / V 2

L 100 10 L
 pMOS I-V
All doping and voltages are inverted for pMOS
Mobility mp is determined by holes
Typically 2-3x lower than that of electrons mn
120 cm2/V*s in AMI 0.6 mm process
Thus pMOS must be wider to provide same current
In this class, assume mn / mp = 2

*** plot I-V

 Transistor Operation
Current depends on region of
transistor behavior
For what Vin and Vout are nMOS and
pMOS in
Cutoff?
Linear?
Saturation?
Schematic of CMOS
inverter
 nMOS Operation
Cutoff Linear Saturated
Vgsn < Vtn Vgsn > Vtn Vgsn > Vtn
Vin < Vtn Vin > Vtn Vin > Vtn
Vdsn < Vgsn Vtn Vdsn > Vgsn Vtn
Vout < Vin - Vtn Vout > Vin - Vtn

Vgsn = Vin VDD

Vdsn = Vout
Idsp
Vin Vout
Idsn
 pMOS Operation
Cutoff Linear Saturated
Vgsp > Vtp Vgsp < Vtp Vgsp < Vtp
Vin > VDD + Vtp Vin < VDD + Vtp Vin < VDD + Vtp
Vdsp > Vgsp Vtp Vdsp < Vgsp Vtp
Vout > Vin - Vtp Vout < Vin - Vtp

Vgsp = Vin - VDD VDD

Vtp < 0
Vdsp = Vout - VDD Idsp
Vin Vout
Idsn
 Calculation of VIL
When the input voltage is Vin = VIL, the slope of
the VTC is equal to [-1](dVout/dVin). At this point
B, nMOS transistor operates in saturation while
the pMOS transistor operates in the linear
region. Using KCL at output node:
[Id,n(saturation)= Id,p(linear)]
 Calculation of VIH
At point D, input voltage is equal to VIH,
the nMOS transistor operates in the
linear region and pMOS transistor
operates in saturation. By applying KCL
at the output node:
[ Id,n(linear) = Id,p(saturation)]
 Calculation of Vth
Threshold voltage is defined as
Vth=Vin=Vout. For Vin=Vout, both transistor
operate in saturation region, refer point
C. By applying KCL at output node:
[ Idn(saturation)=Idp(saturation) ]
Exercise 1

Consider a CMOS inverter circuit with

the following parameters, calculate the
(W/L) ratios of the nMOS and pMOS
transistors if the switching voltage is
Vth = 1.5 V.
VDD = 3.3 V
VT,n = 0.6 V
VT,p = -0.7V
ncox = 80 A/V2
pcox = 30 A/V2
Exercise 2

Consider a CMOS inverter circuit with

the following parameters, calculate the
Switching voltage (Vth) of the circuit.
VDD = 3.3 V
VT,n = 0.6 V
VT,p = -0.7V
ncox = 80 A/V2
pcox = 30 A/V2
(W/L)n = 8
(W/L)p = 12
Voltage transfer characteristic
 Inverter with n-Type MOSFET load

Depletion-Load nMOS Inverter

 Calculation of VOH
When the input voltage Vin is smaller than
the driver threshold voltage VTO, the
driver transistor is turned off and thus
not conduct any drain current. ID,load = 0,

VOH = VDD ID,load = 0

 Calculation of VOL
Assume Vin = VOH = VDD. Driver transistor
operate in linear region and load
transistor operate in saturation. By
using KCL.
Id,driver(linear) = Id,load(saturation)
 Calculation of VIL

When Vin = VIL the slope of the VTC is

equal to (-1),(dVout/dVin). Driver
transistor operate in saturation region
and load transistor operate in linear
region. KCL
Id,driver(saturation) = Id,load(linear)
 Calculation of VIH
Driver transistor operate in linear region
and load transistor operate in
saturation region.
Id,driver(linear) = Id,load(saturation)
 Operating Regions (Summary)

Vout
NMOS off
PMOS res

2.5
Region nMOS pMOS
NMOS s at
PMOS res

2
NMOS sat

A Cutoff Linear

1.5
PMOS sat

1
NMOS res
PMOS sat NMOS res

0.5
B Saturation Linear
PMOS off

0.5 1 1.5 2 2.5 Vin

C Saturation Saturation
D Linear Saturation
E Linear Cutoff
 Exercise 3

VDD = 3.3 V
Threshold voltage nMOS (VT,n) = 0.6 V
Threshold voltage pMOS (VT,p) = -0.7V
Kn = 200 A/V2
Kp = 80 A/V2

Based on the inverter circuit and parameter in figure above,

what is the value of:
i) Switching Voltage, VTH
ii) Input Voltage High, VIH