QUESTIONS AND ANSWERS

Subject : Electronic Devices Sub Code: EC6201

lass :II Sem / ECE

Part A

UNIT-1 SEMICONDUCTOR DIODE

1. Distinguish Between Intrinsic and Extrinsic semiconductors

(May/June2013,May 11)

.
Extrinsic Semiconductor Intrinsic Semiconductor

1. An impurity or doping agent is It is a pure form of semiconductor

added in the pure semiconductor
forms extrinsic semiconductor

2. Number of electrons and holes are Number of electrons and holes are not
equal. equal because of doping

3. Conductivity is very low. Conductivity is improved.

4. Suitable material for manufacturing Not suitable for manufacturing of

of electronic devices. electronic devices.

2. Mention two types of Junction capacitances (May/June 2013)

Diffusion Capacitance
Transition Capacitance
3. Define barrier potential in a PN Junction diode (May/June 2011)
The existence of immobile ions develops the potential difference across the junction, this
potential acts as a barrier for further conduction between the junction. This potential is named as
barrier potential or cut in voltage of PN junction diode.

4. What are called Extrinsic semiconductors? (Nov/Dec 2011)

The electrical conductivity of pure semiconductor can be increased by adding
some impurity into it. The resulting semiconductor is called extrinsic semiconductor.

5. What i s diusion capacitance? (Dec 11, Dec 10)

The diffusion capacitance of forward biased diode is defined as the rate of change
of injected charge with voltage.
6. Give the expression for transition capacitance and diffusion capacitance of a
PN diode. (May 10)
Transition Capacitance :
A
C T

W
Where CT is space charge capacitance
is absolute permittivity
W is depletion region width
Diffusion Capacitance:

C D

V
Where I = diode current
= 1 for Ge and 2 for Si
VT = Threshold voltage

7. Define avalanche break down? (May/June 2010)

When PN junction diode is reverse biased diode, strong depletion region is formed
across the junction results in small current flows due to minority carriers. Breaking of
covalent bonds is due to collision of thermally generated charge carriers having high
velocity and kinetic energy with adjacent atom, this process is a cumulative process
hence the charge carriers are multiplied hence it is known as avalanche multiplication.

8. Define transition capacitance (May/June 2009)

When a PN junction is reverse biased the depletion layer acts like a dielectric material
while P and N type regions on either side have low resistance act as the plates. In this
way a reverse biased PN junction may regarded as parallel plate capacitor. This junction
capacitance is called Transition Capacitance. It is denoted by space charge capacitance
(CT)
A
C T

W
9. Why does reverse saturation current vary with temperature in diodes? (Dec 09)
The rise in temperature increases the generation of electron-hole pairs in
semiconductors and increases their conductivity.As a result, current through the
PN junction diode increases with temperature as given by diode current equation
V

I I o e V T 1

The reverse saturation current Io of diode increases approximately7 per cent
degree Celsius for both germanium and silicon. Since Ico approximately doubles
for every 10 degree Celsius rise in temperature.

10. Define forbidden gap (Dec 09)

The energy gap between the valence band and conduction band is known as forbidden
energy gap.
 UNIT-II-BIOLAR JUNCTION

1. In order to operate a transistor in the active region, w hat kind of biasing is given to
th e junctions? (Dec 11)
Emitter base junction is always forward biased
Collector base junction is always reverse biased

2. Dene current amplication factor for CB a nd CE congurations (May 11)

Current Amplification factor ()
In CB configuration, the ratio of change in collector current I c to the change in
emitter current Ie at constant collector base voltage V eb is known as current
amplification factor.

Ic
IeV eb

Base Current Amplification factor ()

In CE configuration,it is defined as the ratio between the change in collector current
Ic to the change in base current I b.

Ic
I b

3. What is Early effect in CB configuration and give its consequences (Dec 10,
May 10)
When the collector base is reverse biased, it increased the depletion region across the
collector base junction, with the result that the effective width of base terminal decreases.
This variation of effective base width by collector base voltage is known as base width
modulation or early effect.
The consequences are
It reduces the charge carrier recombination of electrons with holes in base region
Hence increases with increase in Vcb and hence the output characteristics is flat
 in active region
For large collector voltages, the effective base width may be reduced to zero
causing voltage breakdown in the transistor. This phenomenon is known as punch
through.

4. What is large signal current gain? (May 09)

It is defined as the ratio between the output current Ic and input current Ib when output
voltage Vce is zero.

Ic
hfe =
I b Vce 0
5. In a common base connection, the emitter current is 1 mA. ICBO=50A, = 0.92 .
Find the total collector current. (Dec 09)
Given :
Ie = 1 mA , ICBO=50A, = 0.92

Ic = ?
I
C Ic = 0.92 1mA = 0.92mA
Ie
Ic = 0.92mA

UNIT-III-FIELD EFFECT TRANSISTOR

1. Write the equation for drain current of JFET (May 13)

2

V
ID
I 1
GS
V p
DSS

Where IDSS = Drain current when gate is shorted to source
VGS = Gate source voltage
Vp = Pinch off voltage
2. Differentiate between enhancement-type a nd depletion-type MOSFETs (May 11)

Depletion type MOSFET Enhancement Type MOSFET

includes both depletion and only enhancement mode
enhancement mode

3. When a FET act as a voltage variable resistor. (Dec 11)

FET is a device operated in the constant current portion of its output characteristics. In
 the region before pinch-off where VDS is small, the FET act as a voltage controlled
resistor, where the drain to source resistance is controlled by the bias voltage VGS.

4. Distinguish clearly the difference between N with P channel FETs (May 10)
N Channel FET P channel FET
1. Current carriers are electrons Current carriers are holes
2. Mobility of electron is almost twice Mobility of holes is poor
that of holes in P channel
3. Low input noise Large input noise
4. Large transconductance Low transconductance

5. Mention the advantages of MOSFET over JFET. (Dec 10)

MOSFET operates in both enhancement and depletion method.
MOSFET has high input impedance than JFET because the gate current is
negligible
Easier to fabricate
Drain resistance is less
6. Compare any four salient features of BJT with JFET. (May/June 2009)
BJT JFET
1. Low input impedance High input impedance
2. High output impedance Low output impedance
3. Bipolar Device Unipolar device
4. Noise is more Less Noise

7. Mention the disadvantage of JFET compared to BJT. (Nov/Dec 2009)

When compared to BJT, JFET has less gain and it is costly.

UNIT-IV SPECIAL SEMICONDUCTOR DEVICES

1. In what way the laser produced by Laser-diode diers from conventional lasers?
(Dec 11, May 11)

2. Give some applications of tunnel diode (May 10)

Used as an ultra high speed switching device
As Logic memory storage device
As microwave oscillator
In relaxation oscillator circuit
As an amplifier

3. Draw the equivalent circuit of tunnel diode (May 09)
 UNIT-V POWER DEVICES AND DISPLAY DEVICES

1. Draw the two transistor equivalent circuit of SCR (May 13,Dec 10)

2. Compare LED and LCD ( May/June 2013)

LCD LED
1. LCD consumes less power than Consumes more power
LED
2. Contrast is good Contrast is better than LCD
3. Life time is very less compared with Extremely long life
LED
4. Response time is more Response time is less

3. List some applications of DIAC (May/June 2011)

Heat control circuits
Light dimmer circuits
Universal motor speed control

4. Define Latching current and holding current of SCR. (Dec 11)

Latching Current
It can be defined as a maximum anode current that an SCR is capable of passing
 without destruction.
Holding current
It can be defined as the minimum value of anode current required to keep the SCR in
On position.

5. What is meant by photovoltaic cell? (May 10)

This cell works on the principle of photo voltaic cell or solar cell is, conversion of
light energy into electrical energy , which is also known as photo voltaic effect.It is a self
generated device i.e., in which a voltage is generated as light strikes the device without
any external bias.
6. Under what principle does a photo voltaic cell work? Give its diagram. (Dec 10)
It works on the principle of photo voltaic cell or solar cell is, conversion of light
energy into electrical energy , which is also known as photo voltaic effect.

7. What is intrinsic stand-off ratio (May 09)

It is defined as the ratio of the voltage drop across RB1 (VA) to the battery voltage (VBB).
VA R B1

V BB R B1 R B 2
Its value is generally lying in the range of 0.5 to 0.8.
8. Briefly explain why SCR cannot be used as a bidirectional switch. (Dec 09)
If the battery connections of the applied voltage are reversed the junction J1 and
J3 are reverse biased. J2 is forward biased. If the applied reverse voltage is small the SCR
is OFF and hence no current flows through the device. If the reverse voltage is increased
to reverse breakdown voltage the junction J1 and J3 will breakdown due to avalanche
effect.This causes current flow through the SCR. Hence SCR can be used to conduct only
in forward direction.

9. How is turn-off of SCR made? (Nov/Dec 2009)

SCR can be turned OFF either by any one of the method
Anode current interruption
Reversing polarity of anode cathode voltage
Reducing current through SCR below holding current IH