CHAPTE R 5

MOS Field-Effect Transistors

(MOSFETs)

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Device Structure

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Operation with Zero Gate Voltage

Two back-to-back diodes, High Resistance (Giga Ohms), No

Current
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Creating a Channel for Current Flow

-vGS (gate to source voltage)
-Vt: threshold voltage (vGS which channel
starts conducting)
-Current flowing when vDS applied
-Effective voltage (or overdrive voltage):

vGS Vt vOV veff

-Charge in the channel:

Q = Cox (WL)vOV
-Oxide capacitance:
-Gate to source capacitance:
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Cox =

ox
tox

C = CoxWL
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Applying a small vDS

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Applying a small vDS

W
iD = [( nCox )( )vOV ]vDS
L
W
iD = [( nCox )( )(vGS Vt ]vDS
L
Conductance gDS of the channel:

g DS

W
= ( nCox )( )(vGS Vt )
L

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Applying a small vDS

Process transconductance
parameter

k 'n = nCox

MOSFET transconductance
parameter
W

k n = nCox (

MOSFET behaves as a
linear resistance

)
rDS =
rDS

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1
g DS

1
=
W
( nCox )( )(vGS Vt )
L

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Operation as vDS is increased

Channel becomes
more tapered and its
resistance increases

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Operation for vDS>>VOV

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P-Channel
MOSFET

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P-Channel MOSFET
Threshold voltage

vGS Vtp
Use absolute value

vGS Vtp
P-Channel transistor process transconductance parameter

k 'n = nCox
P-Channel transistor transconductance parameter
Formulae are the same,
switch sign of voltages

W
k n = n Cox ( )
L

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Complementary MOS or CMOS

Figure 5.10 Cross-section of a CMOS integrated circuit. Note that the PMOS
transistor is formed in a separate n-type region, known as an n well. Another
arrangement is also possible in which an n-type body is used and the n device
is formed in a p well. Not shown are the connections made to the p-type body
and to the n well; the latter functions as the body terminal for the p-channel
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device.

Figure 5.11 (a) Circuit symbol for the n-channel enhancement-type MOSFET.
(b) Modified circuit symbol with an arrowhead on the source terminal to
distinguish it from the drain and to indicate device polarity (i.e., n channel). (c)
Simplified circuit symbol to be used when the source is connected to the body
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or when the effect of the body
on device operation
is unimportant.

Table 5.1 Regions of Operation of the

Enhancement NMOS Transistor

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Figure 5.12 The relative levels of the terminal voltages of the enhancement
NMOS transistor for operation in the triode region and in the saturation region.

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Figure 5.15 Large-signal equivalent-circuit model of an nchannel MOSFET operating in the saturation

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Figure 5.19 (a) Circuit symbol for the p-channel enhancement-type

MOSFET. (b) Modified symbol with an arrowhead on the source
lead. (c) Simplified circuit symbol for the case where the source is
connected to the body.

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Table 5.2 Regions of Operation of the Enhancement PMOS Transistor

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Figure 5.20 The relative levels of the terminal voltages of the

enhancement-type PMOS transistor for operation in the triode region
and in the saturation region.

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Figure E5.7

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Example 5.3.

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Example 5.4

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Example 5.6..

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Example 5.7.

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