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nh lut Ohm
Ohm's Law:
V=IR
Resistivity, :
-- a material property that is independent of sample size and
geometry
RA
Conductivity,
surface area
of current flow
current flow
path length
R1
2D
2
8
D 2 D2
2
R1
R2
2
2
8
2D D
2
Further definitions
J=E
J current density
current
I
surface area A
like a flux
conductivity
voltage gradient
CONDUCTIVITY: COMPARISON
Room temperature values (Ohm-m)-1 = ( m)-1= S m-1
METALS
CERAMICS
conductors
-10
Silver
6.8 x 10 7
Soda-lime glass 10 -10-11
Copper
6.0 x 10 7
Concrete
10 -9
Iron
1.0 x 10 7
Aluminum oxide <10-13
SEMICONDUCTORS
POLYMERS
Polystyrene
Silicon
4 x 10 -4
Polyethylene
Germanium 2 x 10 0
GaAs
10 -6
semiconductors
-14
<10
10 -15-10-17
insulators 8
EXAMPLE:
What is the minimum diameter (D) of the wire so that V < 1.5 V?
(=6.07 x 107 (Ohm-m)-1)
100 m
I = 2.5 A
Cu wire -
100 m
D 2
4
Solve to get
< 1.5 V
A I
2.5 A
6.07 x 107 (Ohm-m)-1
D > 1.87 mm
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2003 Brooks/Cole, a division of Thomson Learning, Inc. Thomson Learning is a trademark used herein under license.
Metals
Insulators
Semiconductors
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partly
filled
band
filled
band
filled states
filled states
filled
band
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Insulators:
Semiconductors:
filled
valence
band
filled
band
GAP
filled states
filled states
GAP
filled
valence
band
filled
band
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Free Electron
negative charge
in conduction band
Hole
positive charge
in valence band
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INTRINSIC SEMICONDUCTORS
Pure material semiconductors: e.g., silicon &
germanium
Group IVA materials
Compound semiconductors
III-V compounds
Ex: GaAs & InSb
II-VI compounds
Ex: CdS & ZnTe
The wider the electronegativity difference between
the elements the wider the energy gap.
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electron
hole
pair creation
Si atom
+ -
no applied
electric field
electron
hole
pair migration
applied
electric field
+
applied
electric field
# holes/m3
n e e p e h
# electrons/m3
electron mobility
hole mobility
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Ex: GaAs
106 ( m)1
ni
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INTRINSIC SEMICONDUCTORS:
CONDUCTIVITY VS T
Data for Pure Silicon:
-- increases with T
-- opposite to metals
ni e e h
E gap / kT
ni e
material
Si
Ge
GaP
CdS
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Intrinsic
semiconductor - A semiconductor in
which properties are controlled by the
element or compound that makes the
semiconductor and not by dopants or
impurities.
Extrinsic semiconductor - A semiconductor
prepared by adding dopants, which determine
the number and type of charge carriers.
Doping - Deliberate addition of controlled
amounts of other elements to increase the
number of charge carriers in a semiconductor.
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Extrinsic semiconductor
(doped with an electron donor)
Without thermal
excitation
With thermal
excitation
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2003 Brooks/Cole, a division of Thomson Learning, Inc. Thomson Learning is a trademark used herein under license.
Energy bands
Intrinsic
semiconductor
Extrinsic semiconductor
(doped with an electron
donor)
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Extrinsic semiconductor
(doped with an electron acceptor)
Without thermal
excitation
With thermal
excitation
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2003 Brooks/Cole, a division of Thomson Learning, Inc. Thomson Learning is a trademark used herein under license.
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Energy bands
Intrinsic
semiconductor
Extrinsic semiconductor
(doped with an electron
acceptor)
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Defect semiconductor
(excess semiconductor Zn1+xO)
Zn+
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Defect semiconductor
(deficit semiconductor Ni1-xO)
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2003 Brooks/Cole, a division of Thomson Learning, Inc. Thomson Learning is a trademark used herein under license.
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2003 Brooks/Cole, a division of Thomson Learning, Inc. Thomson Learning is a trademark used herein under license.
=qn
For a metal, decreases with increasing
temperature because decreases with
increasing temperature.
For a semiconductor, increases with
increasing temperature because n and/or
p increases with increasing temperature.
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For a semiconductor
ne
E g /2kT
oe
E g /2kT
ln ln o
Eg
2kT
log log o
Eg
(2.3)2kT
.
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= q n C + q n A = q n ( C + A) ,
where
An n-type semiconductor
n ni ne ,
where n = total concentration of conduction
electrons,
ni = concentration of intrinsic conduction
electrons,
ne = concentration of extrinsic conduction
electrons.
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D D e ,
n e = ND + ,
-Eg / 2 kT
ni e
-E D /kT
ne e
ni < < n e
p pi .
.
.
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p pi .
However
,
pi = ni
Thus,
p = ni
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n ne
p0 .
= qn n + qp p .
qn n
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A p-type semiconductor
p = pi + pe
A+e A
+
AA +h ,
pe = N A
-Eg / 2 kT
pi e
/kT
E
A
.
pe e
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pi < < pe
n ni .
n = pi
p pe
n 0
= qn n + qp p . qn p
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Intrinsic semiconductor
n n i pi p .
np
2
ni
n i 1.510 cm
10
for Si
n i 2.5 10 cm for Ge .
13
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n n e N D
N D N D
(Donor exhaustion)
n ND .
p=
2
ni
2
ni
ND
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p p e N A
N A - N A (Donor exhaustion)
p NA .
n=
2
ni
2
ni
NA
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Conducting polymers
THE NOBEL PRIZE IN CHEMISTRY, 2000:
CONDUCTIVE POLYMERS
Professor Alan J. Heeger at the University of
California at Santa Barbara, USA
Professor Alan G. MacDiarmid at the University
of Pennsylvania, USA and
Professor Hideki Shirakawa at the University of
Tsukuba, Japan
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Tnh cht in mi
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2003 Brooks/Cole, a division of Thomson Learning, Inc. Thomson Learning is a trademark used herein under license.
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