APM2301A

P-Channel Enhancement Mode MOSFET

Features

Pin Description
D

-20V/-3A , RDS(ON)=72m(typ.) @ VGS=-4.5V

RDS(ON)=98m(typ.) @ VGS=-2.5V

Super High Dense Cell Design for Extremely

Low RDS(ON)

Reliable and Rugged

SOT-23 Package

Top View of SOT-23

Applications

Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Ordering and Marking Information

A P M 23 01 A

Package Code
A : S O T -23
O peration Junction T em p. R ange
C : -55 to 1 50 C
H andling C ode
T R : T ape & R eel

H andling C ode
T em p. R an ge
Package Code

A P M 2301A A :

X - D ate C ode

A 0 1X

Absolute Maximum Ratings

Symbol

(TA = 25C unless otherwise noted)

Parameter

Rating

VDSS

Drain-Source Voltage

-20

VGSS

Gate-Source Voltage

ID*

Maximum Drain Current Continuous

-3

IDM

Maximum Drain Current Pulsed

-10

Unit
V
A

* Surface Mounted on FR4 Board, t 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003

www.anpec.com.tw

APM2301A
Absolute Maximum Ratings Cont.
Symbol
PD

Parameter
Maximum Power Dissipation

TJ

(TA = 25C unless otherwise noted)

Rating

TA=25C

1.25

TA=100C

0.5

Storage Temperature Range

RjA

Thermal Resistance Junction to Ambient

Electrical Characteristics
Symbol

Parameter

150

-55 to 150

100

C/W

Maximum Junction Temperature

TSTG

Unit

(TA = 25C unless otherwise noted)

Test Condition

APM2301A
Min.

Typ.

Max.

Unit

Static
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current

BVDSS
IDSS
VGS(th)
IGSS
RDS(ON)a
VSDa

VGS=0V , IDS=-250A

20

VDS=-16V , VGS=0V
VDS=VGS , IDS=-250A
VGS=8V , VDS=0V

0.45

1.2

V
nA

100

Drain-Source On-state

VGS=-4.5V , IDS=-3A

72

90

Resistance

VGS=-2.5V , IDS=-2A

98

115

Diode Forward Voltage

ISD=-1.25A , VGS=0V

0.6

1.3

m
V

Dynamic
Qg
Total Gate Charge
Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

td(ON)
Tr

Turn-on Delay Time

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

VDS=-10V , IDS=-3A

VGS=-4.5V

VDD=-10V , IDS=-1A ,
VGEN=-4.5V , RG=6
RL=6

Turn-off Fall Time

Ciss

Input Capacitance

Coss
Crss

Output Capacitance
VDS=-12V
Reverse Transfer Capacitance Frequency=1.0MHz

a
b

nC

2.6

Tf

Notes

12

VGS=0V

13
36

21.5
56

45

69.5

37

57.5

ns

510
270
120

pF

: Pulse test ; pulse width 300s, duty cycle 2%

: Guaranteed by design, not subject to production testing

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jun., 2003

www.anpec.com.tw

APM2301A
Typical Characteristics

Output Characteristics

Transfer Characteristics

10

10
-VGS=3,4.5,6,7,8V

-ID-Drain Current (A)

-ID-Drain Current (A)

-V GS=2V

4
-VGS=1.5V

4
TJ=25C
TJ=-55C

TJ=125C

2
-V GS=1V

0
0.0

10

0.5

-VDS - Drain-to-Source Voltage (V)

1.5

2.0

2.5

-VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

On-Resistance vs. Drain Current

0.12

1.50
-IDS =250uA

0.11

RDS(ON)-On-Resistance ()

-VGS(th)-Threshold Voltage (V)

(Normalized)

1.0

1.25
1.00
0.75
0.50
0.25

0.10
-VGS=2.5V

0.09
0.08

-VGS=4.5V

0.07
0.06
0.05
0.04

0.00
-50

-25

25

50

75

0.03

100 125 150

Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jun., 2003

10

-ID - Drain Current (A)

www.anpec.com.tw

APM2301A
Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage

On-Resistance vs. Junction Temperature

0.20

2.0

0.18

RDS(ON)-On-Resistance ()
(Normalized)

RDS(ON)-On-Resistance ()

-ID=3A

0.16
0.14
0.12
0.10
0.08
0.06

-VGS=4.5V
-ID=3A

1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4

0.2
-50

-VGS - Gate-to-Source Voltage (V)

-25

50

75

100 125 150

TJ - Junction Temperature (C)

Gate Charge

Capacitance
800

-V DS =10V
-ID=3A

700

Capacitance (pF)

-VGS-Gate-Source Voltage (V)

25

600
Ciss

500
400
Coss

300

1
200
Crss

100

10

QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jun., 2003

10

15

20

-VDS - Drain-to-Source Voltage (V)

www.anpec.com.tw

APM2301A
Typical Characteristics

Source-Drain Diode Forward Voltage

Single Pulse Power

10

14

-IS-Source Current (A)

12

TJ=150C

Power (W)

10

TJ=25C

8
6
4
2

1
0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0
0.01

1.6

0.1

-VSD -Source-to-Drain Voltage (V)

10

100

Time (sec)

Normalized Effective Transient

Thermal Impedance

Normalized Thermal Transient Impedence, Junction to Ambient

1
Duty Cycle=0.5

D=0.2
D=0.1

0.1

D=0.05
D=0.02

D=0.01

0.01
1E-4

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=100C/W
3.TJM-TA=PDMZthJA
SINGLE PULSE

1E-3

0.01

0.1

10

100

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jun., 2003

www.anpec.com.tw

APM2301A
Packaging Information
SOT-23
D
B

3
E

S
e

A1

Dim

M illim et er s

Inc he s

M in.
1. 0 0

M ax.
1. 3 0

M in.
0. 0 39

M ax.
0. 0 51

A1

0. 0 0

0. 1 0

0. 0 00

0. 0 04

0. 3 5

0. 5 1

0. 0 14

0. 0 20

0. 1 0

0. 2 5

0. 0 04

0. 0 10

2. 7 0

3. 1 0

0. 1 06

0. 1 22

1. 4 0

1. 8 0

0. 0 55

0. 0 71

3. 0 0

0. 0 94

1. 9 0 B SC

2. 4 0

0. 3 7

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jun., 2003

0. 0 75 B SC
0. 11 8

0. 0 01 5

www.anpec.com.tw

APM2301A
Physical Specifications
Terminal Material
Lead Solderability

Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)

Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition

(IR/Convection or VPR Reflow)

temperature

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

183C
Pre-heat temperature

Time

Classification Reflow Profiles

Average ramp-up rate(183C to Peak)

Preheat temperature 125 25C)
Temperature maintained above 183C
Time within 5C of actual peak
temperature
Peak temperature range
Ramp-down rate
Time 25C to peak temperature

Convection or IR/ Convection

VPR

3C/second max.
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds

10 C /second max.

220 +5/-0C or 235 +5/-0C

6 C /second max.
6 minutes max.

215~ 219C or 235 +5/-0C

10 C /second max.

60 seconds

Package Reflow Conditions

pkg. thickness 2.5mm
and all bags
Convection 220 +5/-0 C
VPR 215-219 C
IR/Convection 220 +5/-0 C

pkg. thickness < 2.5mm and

pkg. volume 350 mm

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jun., 2003

pkg. thickness < 2.5mm and pkg.

volume < 350mm
Convection 235 +5/-0 C
VPR 235 +5/-0 C
IR/Convection 235 +5/-0 C
www.anpec.com.tw

APM2301A
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST

Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9

Description
245C,5 SEC
1000 Hrs Bias @ 125C
168 Hrs, 100% RH, 121C
-65C ~ 150C, 200 Cycles

Carrier Tape & Reel Dimensions

t
D

Po

P1

Bo

F
W

Ao

D1

Ko
T2

J
C
A

T1

Application

SOT-23

1781

72 1.0

D1

Po

3.5 0.05

1.5 +0.1

1.5 +0.1

4.0 0.1

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jun., 2003

13.0 + 0.2 2.5 0.15

T1

T2

1.5 0.3

W
8.0+ 0.3
- 0.3

8.4 2

4 0.1

1.75 0.1

P1

Ao

Bo

Ko

3.2 0.1

1.4 0.1

0.20.03

2.0 0.1 3.15 0.1

www.anpec.com.tw

APM2301A
Cover Tape Dimensions
Application
SOT- 23

Carrier Width
8

Cover Tape Width

5.3

Devices Per Reel

3000

Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jun., 2003

www.anpec.com.tw

This datasheet has been downloaded from:

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Datasheets for electronic components.