SUP85N03-3m6P

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY
VDS (V)
30

RDS(on) ()

ID (A)

0.0036 at VGS = 10 V

85d

0.0044 at VGS = 4.5 V

85d

Halogen-free According to IEC 61249-2-21

Definition
TrenchFET Power MOSFET
100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC

Qg (Typ.)
67

APPLICATIONS
Power Supply
- Secondary Synchronous Rectification
DC/DC Converter

TO-220AB

G D S
S

Top View
Ordering Information: SUP85N03-3m6P-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

Parameter

Symbol

Limit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

20

Continuous Drain Current (TJ = 150 C)

TC = 25 C
TC = 70 C

ID
IDM

Pulsed Drain Current

Avalanche Current
a

L = 0.1 mH

Single Avalanche Energy

TC = 25 C

Maximum Power Dissipationa

TA = 25

Operating Junction and Storage Temperature Range

Cc

85d
85d
120

IAS

45

EAS

101

PD

Unit

78.1

mJ

3.1

TJ, Tstg

- 55 to 150

Symbol

Limit

Unit

THERMAL RESISTANCE RATINGS

Parameter
Junction-to-Ambient (PCB Mount)

Junction-to-Case (Drain)

RthJA

40

RthJC

1.6

C/W

Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.

Document Number: 65536

S09-2271-Rev. A, 02-Nov-09

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SUP85N03-3m6P
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter

Symbol

Test Conditions

Min.

VDS

VDS = 0 V, ID = 250 A

30

VGS(th)

VDS = VGS, ID = 250 A

IGSS

VDS = 0 V, VGS = 20 V

Typ.

Max.

Unit

Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea

IDSS

2.5
250

VDS = 30 V, VGS = 0 V

VDS = 30 V, VGS = 0 V, TJ = 125 C

50

VDS = 30 V, VGS = 0 V, TJ = 150 C

250

ID(on)
RDS(on)
gfs

VDS 10 V, VGS = 10 V

50

V
nA
A
A

VGS = 10 V, ID = 22 A

0.0030

0.0036

VGS = 4.5 V, ID = 20 A

0.0036

0.0044

VDS = 15 V, ID = 20 A

110

Dynamicb
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Chargec

Qg

Gate-Source Chargec

Qgs

Rg

Gate Resistance
Turn-On Delay Timec
Rise Timec

400
67
VDS = 15 V, VGS = 10 V, ID = 20 A

Fall Timec

td(off)

100
nC

10.5
12.2

f = 1 MHz

td(on)
tr

pF

680

Qgd

Gate-Drain Charge

Turn-Off Delay Time

3535
VGS = 0 V, VDS = 15 V, f = 1 MHz

VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1

tf

Drain-Source Body Diode Ratings and Characteristics TC = 25 C

0.3

1.4

2.8

11

20

10

20

35

53

10

20

85

Pulsed Current

ISM

120

Forward Voltagea

VSD

Reverse Recovery Time

Peak Reverse Recovery Current
Reverse Recovery Charge

IF = 10 A, VGS = 0 V

trr
IRM(REC)
Qrr

ns

IS

Continuous Current

IF = 10 A, dI/dt = 100 A/s

0.83

1.5

41

62

ns

40

60

nC

Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Document Number: 65536

S09-2271-Rev. A, 02-Nov-09

SUP85N03-3m6P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
120

0.0045

I D - Drain Current (A)

R DS(on) - On-Resistance ()

VGS = 10 V thru 4 V

100

VGS = 3 V
80

60

40

0.0040

VGS = 4.5 V
0.0035
VGS = 10 V
0.0030

20

0
0.0

0.0025
0.5

1.0

1.5

2.0

20

40

VDS - Drain-to-Source Voltage (V)

80

100

ID - Drain Current (A)

Output Characteristics

On-Resistance vs. Drain Current

0.020

0.016

R DS(on) - On-Resistance ()

I D - Drain Current (A)

60

2
TC = 25 C
1

0.012

0.008

TJ = 150 C

0.004

TC = 125 C
0
0.0

TJ = 25 C

TC = - 55 C
0.6

1.2

1.8

2.4

0.000

3.0

VGS - Gate-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

On-Resistance vs. Gate-to-Source Voltage

10

10

300

VGS - Gate-to-Source Voltage (V)

g fs - Transconductance (S)

ID = 20 A
TC = - 55 C

240

180

TC = 25 C

120

TC = 125 C

60

8
VDS = 15 V
6
VDS = 8 V

VDS = 24 V

0
0

12

Document Number: 65536

S09-2271-Rev. A, 02-Nov-09

24

36

48

60

20

40

60

I D - Drain Current (A)

Qg - Total Gate Charge (nC)

Transconductance

Gate Charge

80

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SUP85N03-3m6P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
2.1

100

I S - Source Current (A)

1.8
ID = 250 A

TJ = 150 C
VGS(th) (V)

10

TJ = 25 C

1.5

1.2

1
0.9

0.1
0.0

0.2

0.4

0.6

0.8

1.0

0.6
- 50

1.2

25

50

75

TJ - Temperature (C)

Source-Drain Diode Forward Voltage

Threshold Voltage

5000

100

125

150

100

125

150

VDS - Drain-to-Source Voltage (V)

41

Ciss

4000
C - Capacitance (pF)

- 25

VSD - Source-to-Drain Voltage (V)

3000

2000
Coss
1000

39
ID = 250 A
37

35

Crss
0
0

10

15

20

25

33
- 50

30

- 25

25

50

75

VDS - Drain-to-Source Voltage (V)

TJ - Junction Temperature (C)

Capacitance

Drain Source Breakdown vs. Junction Temperature

1.8

160

1.5

120
I D - Drain Current (A)

(Normalized)

R DS(on) - On-Resistance

ID = 20 A

1.2

0.9

VGS = 10 V

0.6
- 50

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80

40

VGS = 4.5 V
- 25

Package Limited

25

0
50

75

100

125

150

25

50

75

100

TJ - Junction Temperature (C)

TC - Case Temperature (C)

On-Resistance vs. Junction Temperature

Current Derating

125

150

Document Number: 65536

S09-2271-Rev. A, 02-Nov-09

SUP85N03-3m6P
Vishay Siliconix
TYPICAL CHARACTERISTICS

25 C, unless otherwise noted

1000

100

Limited by RDS(on)*

TJ = 25 C

TJ = 150 C

10

I D - Drain Current (A)

I DAV (A)

100
100 A
10

1 ms
10 ms, 100 ms
1 s, 10 s, DC

TC = 25 C
Single Pulse

0.1

1
10-5

10-4

10-3

10-2

10-1

Time (s)

Single Pulse Avalanche Current Capability vs. Time

0.01
0.1

BVDSS
Limited

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

Normalized Effective Transient

Thermal Impedance

1
Duty Cycle = 0.5

0.2
0.1

0.05
0.02
Single Pulse
0.1
10 -4

10 -3

10 -2

10 -1

10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65536.

Document Number: 65536

S09-2271-Rev. A, 02-Nov-09

www.vishay.com
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Vishay

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All product specifications and data are subject to change without notice.
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(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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therein, which apply to these products.
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Document Number: 91000

Revision: 18-Jul-08

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