2SA1943/FJL4215

PNP Epitaxial Silicon Transistor

Applications
High-Fidelity Audio Output Amplifier
General Purpose Power Amplifier

Features

High Current Capability: IC = -17A.

High Power Dissipation : 150watts.
High Frequency : 30MHz.
High Voltage : VCEO= -250V
Wide S.O.A for reliable operation.
Excellent Gain Linearity for low THD.
Complement to 2SC5200/FJL4315.
Full thermal and electrical Spice models are available.
Same transistor is also available in:
-- TO3P package, 2SA1962/FJA4213 : 130 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts

Absolute Maximum Ratings*

Symbol

TO-264

1.Base 2.Collector 3.Emitter

Ta = 25C unless otherwise noted

Parameter

Ratings

Units

BVCBO

Collector-Base Voltage

-250

BVCEO

Collector-Emitter Voltage

-250

BVEBO

Emitter-Base Voltage

-5

IC

Collector Current

-17

IB

Base Current

-1.5

PD

Total Device Dissipation(TC=25C)

Derate above 25C

150
1.04

W
W/C

TJ, TSTG

Junction and Storage Temperature

- 50 ~ +150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics*
Symbol
RJC

Ta=25C unless otherwise noted

Parameter
Thermal Resistance, Junction to Case

Max.

Units

0.83

C/W

* Device mounted on minimum pad size

hFE Classification
Classification

hFE1

55 ~ 110

80 ~ 160

2009 Fairchild Semiconductor Corporation

2SA1943/FJL4215 Rev. C

www.fairchildsemi.com
1

2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

January 2009

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCBO

Collector-Base Breakdown Voltage

IC=-5mA, IE=0

-250

BVCEO

Collector-Emitter Breakdown Voltage

IC=-10mA, RBE=

-250

BVEBO

Emitter-Base Breakdown Voltage

IE=-5mA, IC=0

-5

ICBO

Collector Cut-off Current

VCB=-230V, IE=0

-5.0

IEBO

Emitter Cut-off Current

VEB=-5V, IC=0

-5.0

hFE1

DC Current Gain

VCE=-5V, IC=-1A

55

hFE2

DC Current Gain

VCE=-5V, IC=-7A

35

VCE(sat)

Collector-Emitter Saturation Voltage

IC=-8A, IB=-0.8A

-0.4

-3.0

VBE(on)

Base-Emitter On Voltage

VCE=-5V, IC=-7A

-1.0

-1.5

fT

Current Gain Bandwidth Product

VCE=-5V, IC=-1A

30

MHz

Cob

Output Capacitance

VCB=-10V, f=1MHz

360

pF

160
60

* Pulse Test: Pulse Width=20s, Duty Cycle2%

Ordering Information
Part Number

Marking

Package

Packing Method

2SA1943RTU

A1943R

TO-264

TUBE

hFE1 R grade

2SA1943OTU

A1943O

TO-264

TUBE

hFE1 O grade

FJL4215RTU

J4215R

TO-264

TUBE

hFE1 R grade

FJL4215OTU

J4215O

TO-264

TUBE

hFE1 O grade

2009 Fairchild Semiconductor Corporation

2SA1943/FJL4215 Rev. C

Remarks

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2

2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

Electrical Characteristics* T =25C unless otherwise noted

-20

IB = -900mA
IB = -800mA

IB = -1A

-16
-14
-12

IB = -300mA

-10

IB = -200mA

Tj = 25 C

-8

IB = -100mA

-6

VCE = -5V

Tj = 125 C

IB = -700mA
IB = -600mA
IB = -500mA
A
IB = -400m

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

-18

-4

100

Tj = -25 C

10

-2

-0

-2

-4

-6

-8

1
0.1

-10

10

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

Figure 2. DC current Gain ( R Grade )

10000

hFE, DC CURRENT GAIN

Tj = 25 C

Vce(sat)[mV], SATURATION VOLTAGE

Tj = 125 C

VCE = -5V

100
o

Tj = -25 C

10

1
0.1

10

Ic=-10Ib

1000

Tj=25 C

Tj=125 C
100

Tj=-25 C

10
0.1

IC[A], COLLECTOR CURRENT

10

Ic[A], COLLECTOR CURRENT

Figure 3. DC current Gain ( O Grade )

Figure 4. Collector-Emitter Saturation Voltage

14

Ic=-10Ib

Tj=-25 C

12

IC[A], COLLECTOR CURRENT

Vbe(sat)[mV], SATURATION VOLTAGE

10000

Tj=25 C

1000

Tj=125 C

100
0.1

0
0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

10

V BE [V], BASE-EMITTER VOLTAGE

Ic[A], COLLECTOR CURRENT

Figure 5. Base-Emitter Saturation Voltage

Figure 6. Base-Emitter On Voltage

2009 Fairchild Semiconductor Corporation

2SA1943/FJL4215 Rev. C

V CE = 5V
10

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2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

Typical Characteristics

IC MAX. (Pulsed*)

IC [A], COLLECTOR CURRENT

0.9

Transient Thermal Resistance, Rthjc[ C / W]

100

1.0

0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1

10ms*
10

IC MAX. (DC)

100ms*
DC

0.1

*SINGLE NONREPETITIVE
o

PULSE TC=25[ C]
0.01

1E-6

1E-5

1E-4

1E-3

0.01

0.1

Pulse duration [sec]

10

100

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 7. Thermal Resistance

Figure 8. Safe Operating Area

160

PC[W], POWER DISSIPATION

140
120
100
80
60
40
20
0
0

25

50

75

100

125

150

175

TC[ C], CASE TEMPERATURE

Figure 9. Power Derating

2009 Fairchild Semiconductor Corporation

2SA1943/FJL4215 Rev. C

www.fairchildsemi.com
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2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

Typical Characteristics

2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

Package Dimensions

(8.30)

(1.00)

(2.00)

20.00 0.20

1.50 0.20

(7.00)

(7.00)

2.50 0.10

4.90 0.20
(1.50)

(1.50)

2.50 0.20

3.00 0.20

(1.50)
20.00 0.50

0.2

.00

(2.00)

(11.00)

.00

2
(R

(R1

(0.50)

0
3.3

(9.00)

(9.00)

(8.30)

(4.00)

20.00 0.20

6.00 0.20

TO-264

+0.25

1.00 0.10

+0.25

0.60 0.10

2.80 0.30

(2.80)

5.45TYP
[5.45 0.30]

(0.15)

(1.50)

3.50 0.20

5.00 0.20

5.45TYP
[5.45 0.30]

Dimensions in Millimeters

2009 Fairchild Semiconductor Corporation

2SA1943/FJL4215 Rev. C

www.fairchildsemi.com
5

2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

2009 Fairchild Semiconductor Corporation

2SA1943/FJL4215 Rev. C

www.fairchildsemi.com
6

This datasheet has been downloaded from:

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Datasheets for electronic components.