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    Jonas Lemuel Datu
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    The document summarizes key equations and concepts related to bipolar junction transistors (BJTs) and MOSFETs. It defines common BJT parameters such as current gain (β), forward and reverse current gain (αF and αR), and transit time (τt). It also describes BJT operating regions, early effect, and the Gummel plot. For MOSFETs, it defines threshold voltage (VTH), capacitance (C), and current equations in different operating regions such as accumulation, depletion, and inversion.

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    jjkkjoio

    Original Title

    Cheatsheet Finals

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    The document summarizes key equations and concepts related to bipolar junction transistors (BJTs) and MOSFETs. It defines common BJT parameters such as current gain (β), forward and reverse current gain (αF and αR), and transit time (τt). It also describes BJT operating regions, early effect, and the Gummel plot. For MOSFETs, it defines threshold voltage (VTH), capacitance (C), and current equations in different operating regions such as accumulation, depletion, and inversion.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    23 views1 page

    PNP, NPN, 0, 0 Active Saturation

    Uploaded by

    Jonas Lemuel Datu
    The document summarizes key equations and concepts related to bipolar junction transistors (BJTs) and MOSFETs. It defines common BJT parameters such as current gain (β), forward and reverse current gain (αF and αR), and transit time (τt). It also describes BJT operating regions, early effect, and the Gummel plot. For MOSFETs, it defines threshold voltage (VTH), capacitance (C), and current equations in different operating regions such as accumulation, depletion, and inversion.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 1

    =

    1
    1+

    =
    =

    1
    1+

    1+

    2
    ( )
    2

    1


    Hybrid-Pi Model

    If Narrow Emitter, REPLACE LE with WE


    (QN emitter width)
    =
    = 0

    1 0

    =
    PNP, NPN
    , < 0
    , > 0

    , < 0
    Cutoff
    Active

    , > 0
    Rev Act
    Saturation

    Electrostatics
    BJT Parameters

    =
    +

    Base Width Modulation


    ;
    =
    Early Voltage

    sinh /

    cosh
    sinh

    1sinh1

    1
    sinh

    coshsinh1

    1
    1+

    1
    cosh /

    =
    =

    sinh /
    cosh (/ )

    cosh / +

    1+

    =
    =

    + +

    =

    for constant VEB

    = =
    =

    0
    Punch-Through (extreme BWM)
    = 0 = +
    Avalanche Multiplication
    0
    0 =
    + 1 1/
    low VEB, RG current not negligible, lower

    =
    + +
    @high VEB, decreases due to 1.)high
    level injection 2.)series resistance
    3.)current crowding
    Gummel Plot

    =

    sinh /

    sinh ()/

    sinh ()/

    = 0

    1
    =

    0 sinh /

    =
    /

    =
    ;

    = , + , ,

    , =
    ; , =
    ,



    , =
    =

    2( + ( , / ))
    Full BJT Model

    BJT Switching

    = ln

    Turn off

    = ln

    1+
    /

    cosh

    = + 2

    2 (2 )

    Inversion
    =

    Case 1: fast response (low freq)


    =
    Case 2: slow (high freq)
    =
    =

    =
    = ,

    ; =
    +
    2

    ACC

    DEP

    2
    =

    2
    2 (2 + )

    = + + 2

    Bulk Charge Model


    linear: < =

    2

    sarutarion: =

    Inv1

    Inv2

    P-bulk
    N-bulk
    VG<VFB
    VG>VFB
    VFB <VG<VTH
    VTH <VG< VFB
    VG>VTH
    VG<VTH

    = +
    0

    Accumulation (P-bulk, VG <VFB)


    = + (note, Vox can be negative)
    = = M S
    2
    =
    0

    =
    = 0

    =
    =
    Depletion (VTH>VG >VFB)
    Acc
    Dep
    Inv

    2


    2

    3
    =1+
    =1+

    WT = depletion width in Si-bulk


    :
    =

    2 (2 + )

    Narrow Base Assumption


    2
    cosh = 1 +
    ; sinh =
    2


    2
    2

    1+

    = 0 + 0

    MOSCAP
    Fermi level is flat in Si; Band bending
    linear in Oxide

    1
    1
    1

    +
    =
    +


    Threshold Condition
    = ; = 2
    = =

    2
    2

    =
    Enhancement normally open (off)
    Deplection normally closed (on)
    <
    > , = 0
    > , > 0
    =
    >
    =

    if
    Enhancement Mode

    = 2
    = + +

    sinh

    Channel Lenth Modulation


    1
    1


    1+

    sinh / Charge Control

    2
    =

    Flatband Condition

    2 (2 )

    MOSFET

    =
    =
    1
    = +

    1
    0

    = 0 1

    0 = 0

    1 0

    Non-Ideal

    = + 2 +

    = + 2

    = =

    = 0

    Ideal ( = )

    2 (2 )

    = + + 2

    2 (2 + )

    = 2 +
    ()
    neglect variation of to y
    = 2 (2 + )
    =
    = + + 2
    Square Law
    linear

    2 (2 + )

    [1 +

    ]
    PMOSFET
    turns on < ; < 0 < 0
    , = ,
    , = ,
    Small Signal Model

    at low freq, capacitors are open, id enters D


    = +

    =
    =

    =
    = 0

    ,
    Cutoff Frequency

    =
    =

    2
    2
    decreasing L higher MOSFET freq range

    GLHF! GGWP!
    remark-rsd24599

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