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5, September 2013
I. INTRODUCTION
In the modern communication systems, VCOs act as basic
building blocks for transmitting the frequency. Due to high
phase noise performance, VCO with LC tank are highly
utilized with passive inductors and varactors in the radio
frequency. Practically the tuning rang of VCO is low and
these makes them unsuitable for wideband applications. By
utilizing switched capacitors [1], [2] and switched inductors
[3], [4], tuning rang of wide frequency can be obtained. The
disadvantages are: enlarging the chip area and complexity of
control mechanism.
For overcoming these restrictions, the concept of
frequency tuning is introduced by active inductors. In this
study by using a circuit structure in reference [5] and change
the parameters of transistors and increase the central
frequency up to 5.5GHz, higher development of wide tuning
rang VCO performance with active inductors is reached.
Then its results are compared with the same structure by
passive inductor. The proposed VCOs in the 0.18m process
are designed which is suitable for system integration in
transceiver designs.
M5
M4
M3
M1
M2
M 10
M9
M7
M8
DOI: 10.7763/IJIEE.2013.V3.364
M6
493
International Journal of Information and Electronics Engineering, Vol. 3, No. 5, September 2013
B. Start- Up Conditions
By considering small signal model of tunable active
inductor (Fig. 3), simplified equivalent circuit VCO is shown
in Fig. 4(a). To be sure of oscillation start up in structures,
negative conductance of cross coupled transistors M7-M8
should be large enough to compensate for the loss of tank,
which affects the equivalent conductance Gp and Gres
respectively. For designing VCO with active inductor,
negative conductance is chosen 3 times larger than the
needed amount.
Z in =
2 j C gs 1 + C gs 3 g m 1 + g ds 5
g ds 5 g m 1 + g m 3 + j C gs 1 + C gs 3
g m 7 3G p =
(1)
3
g ds 5
2
2 C gs 1 + C gs 3
g ds 5 ( 2 g m 1 + g m 3 g ds 5 )
2 ( g ds 5 g m 1 )
g ds 5 ( 2 g m 1 + g m 3 g ds 5 )
(2)
(3)
Fig. 3. Simplified circuit model of the active inductor
Leq
Rs
Gp
Cvar
-gm7
M7
M1
M8
Cgs7
Tunable active
inductor
MOS
varactor
Cross-coupled
pair
(a)
M2
Gres
Cvar
g
G p = ds 5
2
(4)
-gm7
Cgs7
LC tank
(passive inductor)
Cross-coupled
pair
(b)
Fig. 4. Simplify model for VCO with (a)active and (b)passive inductor.
494
(5)
International Journal of Information and Electronics Engineering, Vol. 3, No. 5, September 2013
1.2
ts(outP), V
ts(outM), V
1.0
0.8
0.6
transistors
size ( m / m )
M 1, M 2
30 / 0.18
M 3, M 4
112.5 / 0.18
1.8
M 5, M 6
25 / 0.18
1.6
M 7,M 8
70 / 0.18
0.4
0
50
100
150
200
250
300
350
250
300
350
400
time, psec
ts(outP), V
ts(outM), V
(a)
1.4
1.2
1.60p
1.0
C_FET
1.40p
50
100
150
200
400
time, psec
1.20p
(b)
Fig. 6. The output curve of VCO with (a)active and (b)passive inductor
1.00p
800.f
600.f
400.f
1.0m 1.2m 1.4m 1.6m 1.8m 2.0m 2.2m 2.4m 2.6m
W
V.
SIMULATION
International Journal of Information and Electronics Engineering, Vol. 3, No. 5, September 2013
TABLE II: COMPARING THE VCO CIRCUITS
0.18 m CMOS 0.18 m CMOS 0.18 m CMOS 0.18 m CMOS 0.18 m CMOS 0.18 m CMOS
5.5
GHz
5.5
2.84
1.8
1.8
1.8
1.8
1.8
1.8
29.38
7.592
22
13.8
26
dBm
0.211
0.454
10.69
29
dBc / Hz
80.314
106.4
79.85
90
95
105.5
m6
freq=5.456GHz
dBm(Spectrum)=-0.457
m6
dBm(Spectrum)
pnmx, dBc
m2
-80
1E6
10
-120
1E7
noisefreq, Hz
(a)
m2
noisefreq= 1.000MHz
pnmx=-106.4 dBc
REFERENCES
-60
pnmx, dBc
-80
Fig. 9. Measured output power spectrum for VCO with passive inductor
-100
[1]
-80
m2
-100
[2]
-120
-140
1E4
1E5
1E6
[3]
1E7
noisefreq, Hz
(b)
[4]
Fig. 7. Phase noise of the (a) first and (b)second VCO at 5.5GHz
[5]
m6
freq=5.443GHz
dBm(Spectrum)=0.211
20
dBm(Spectrum)
-60
freq, GHz
-40
1E5
-40
m2
noisefreq= 1.000MHz
pnmx=-80.31 dBc
-60
-20
-100
-40
1.9
VI. CONCLUSION
1E4
1.6
mW
-20
2.0
m6
[6]
0
-20
[7]
-40
-60
-80
0
10
[8]
freq, GHz
Fig. 8. Measured output power spectrum for VCO with active inductor
496
International Journal of Information and Electronics Engineering, Vol. 3, No. 5, September 2013
[9]
Najmeh Charaghi Shirazi was born in Shiraz, Iran in 1982. She is a student
of PHD in Electronic Engineering Tehran science and research branch. She
received the B.Sc. degree in Electronics Engineering from Azad University
of Bushehr,Iran in 2005, MSc. Degree from Bushehr university in 2009. She
has authored more than 8 published technical papers in electronics. Her
current research activities include analog circuit and RF Integrated Circuit
design and Satellite communication.
Roozbeh Hamzehyan was born in Shiraz, Iran in 1982. He received the B.Sc.
degree in Electronics Engineering from Azad University of Bushehr,Iran in
2004, MSc. Degree in communication Engineering from Bushehr university
in 2008. His current research activities include Detection, RF Integrated
Circuit design and Satellite communication.
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