12/5/2016

ElectricalEngineeringinterviewquestionsandanswerspart5

ElectricalEngineeringinterviewquestionsandanswerspart5
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ElectricalEngineeringinterviewquestionsandanswerspart5

ElectricalEngineering
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26.Explainforwardresistance,staticresistanceanddynamic
resistanceofapnjunctiondiode.

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ForwardResistance:Resistanceofferedinadiodecircuit,whenitisforwardbiased,is
calledforwardresistance.
DCorStaticResistance:DCresistancecanbeexplainedastheratioofthedcvoltage

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acrossthediodetothedirectcurrentflowingthroughit.

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ACorDynamicResistance:Itcanbedefinedasthereciprocaloftheslopeofthe

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forwardcharacteristicofthediode.Itistheresistanceofferedbyadiodetothechanging ElectricalEngineeringtest6
forwardcurrent.
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27.HowdoesZenerphenomenondifferfromAvalanchebreakdown?
Thephenomenonwhenthedepletionregionexpandsandthepotentialbarrierincreases
leadingtoaveryhighelectricfieldacrossthejunction,duetowhichsuddenlythe

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reversecurrentincreasesunderaveryhighreversevoltageiscalledZenereffect.Zener
breakdownorAvalanchebreakdownmayoccurindependentlyorbothofthesemay
occursimultaneously.Diodejunctionsthatbreakdownbelow5varecausedbyZener
Effect.Junctionsthatexperiencebreakdownabove5varecausedbyavalancheeffect.
TheZenerbreakdownoccursinheavilydopedjunctions,whichproducenarrow
depletionlayers.Theavalanchebreakdownoccursinlightlydopedjunctions,which
producewidedepletionlayers.

28.CompareJFETsandMOSFETs.
ComparisonofJFETsandMOSFETs:
JFETscanonlybeoperatedinthedepletionmodewhereasMOSFETscanbe
operatedineitherdepletionorinenhancementmode.InaJFET,ifthegateisforward
biased,excesscarrierinjunctionoccursandthegatecurrentissubstantial.
MOSFETshaveinputimpedancemuchhigherthanthatofJFETs.Thusisdueto
negligiblesmallleakagecurrent.
JFETshavecharacteristiccurvesmoreflatthanthatofMOSFETisindicatingahigher
drainresistance.
WhenJFETisoperatedwithareversebiasonthejunction,thegatecurrentIGislarger
thanitwouldbeinacomparableMOSFET.

30.Explainthinfilmresistorsandwirewoundresistors
a.ThinfilmresistorsItisconstructedasathinfilmofresistivematerialisdepositedon
aninsulatingsubstrate.Desiredresultsareobtainedbyeithertrimmingthelayer
thicknessorbycuttinghelicalgroovesofsuitablepitchalongitslength.Duringthis
process,thevalueoftheresistanceismonitoredcloselyandcuttingofgroovesis
stoppedassoonasthedesiredvalueofresistanceisobtained.
b.Wirewoundresistorslengthofwirewoundaroundaninsulatingcylindricalcoreare
knownaswirewoundresistors.ThesewiresaremadeofmaterialssuchasConstantan
andManganinbecauseoftheirhighresistivity,andlowtemperaturecoefficients.The
completewirewoundresistoriscoatedwithaninsulatingmaterialsuchasbakedenamel

31.Whatisadifferentialamplifier?Also,explainCMRR.
DifferentialAmplifier:Theamplifier,whichisusedtoamplifythevoltagedifference
betweentwoinputlinesneitherofwhichisgrounded,iscalleddifferentialamplifier.This
reducestheamountofnoiseinjectedintotheamplifier,becauseanynoiseappearing
simultaneouslyonboththeinputterminalsastheamplifyingcircuitryrejectsitbeinga

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commonmodesignal.
CMRR:Itcanbedefinedastheratioofdifferentialvoltagegaintocommonmade
voltagegain.Ifadifferentialamplifierisperfect,CMRRwouldbeinfinitebecauseinthat
casecommonmodevoltagegainwouldbezero.
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