NPL@ [Nationa Physieal Labor WHY? Light emitting iodes (LEDs) are narrow band long lasting light sources based on semiconductors. By directly converting electricity into photons, LEDs can generate more than twenty times more ight er eletriity uni consumed compared to incandescent bubs where most energy is wasted on heat Since mare than a quarter of world eletricty consumption i sed for ightng purposes [I] switching to more ecient ight sources promise an impertant reduction in CO, emissions Highly efficient light sources in the form of LEDS ate just one ‘xample of device based on group II-nitide aly semiconductors ‘The lint ncudes water purification systems and high power tronsitrs. These matrls ae sil being improved today to increase the efficiency of tomarow's devices THE PROBLEM “The gromth of ideal compound semiconductors canbe challenging “Threading clslocations (TDs) ae inherent growth side efets of enivides material systems and they can limit the optoelectronic performance ofthe resulting devices. “Threading dstcations (TDs) are 10 tonoogical defects that propagate through the sample an reach an interac, They can remove electri Carriers fom the recombination process reducing the laminescence ficiency. Since direct ebsoration f challenging, we use electron microscopes to characteris such defects A beam of incident electrons wl be sensitive tothe distortions of the latice planes, especialy inthe highly ited seometry usd nthe electron channeling contrast maging (ECCI) fechnique in the seaning econ meraicope (SEM) Sirathetyde Understanding threading dislocation contrast in scanning electron microscope images E. PASCAL SUPERVISORS: B. HOURAHINE, C. TaAGER-CowaN, K. MrwcARD Department of Physics, SUPA, University of Strathclyde ELECTRON CHANNELLING CONTRAST MODEL The bachacatered electrons (BSE) ‘Signal s especialy sensitive 10 the deviation of the angle of incidence fom the Bragg condition ofthe satering plane. This phenoren we cll Channeling. Defects local change the Bragg contion, becoming visible 3= intensity contrast inthe BSE rmicroaraph “The model used here considers the directly transite electron beam (7) and one difracted beam (0) 25 standing waves in the sample. “The two beams interact dynamically with eachother, esilating in, , Intensity 35 they travel though the sample 2]. The dfracted beam ‘equation can be weten as ants sams ue ld ¢ ( te date ma tt i Fee eee See eee emacs il Se I The two beams periodically exchange amplitude while aso losing signal to inelastic seatterng. This loss modulated both by the deviation frm the Bragg condition and te locally probed stain along the 2 dretion. EDGE DISLOCATION IN GAN “The model can be use to predict the character ofthe ebserved threading dsocations. By obtaining ferent ciation conditions images forthe same area wwe can overcome some of the contrast ressution limitations We show here predicted edge TD contrast in a GaN sample fr the geometry used by Dr Naresh Kuma [3] The measured ECC images (let) were aquired into diferent difraction conditions defined bythe vectors shown bom HS Ea siocations types brings us oe step close to understanding how to control tee formation during the materia growth process and wlmatlyninmise their effet onthe efficiency of the devices, “This model can be ready extended to eter SEM techniques suchas electron backscattering fraction which i widely used for semiconductor charatersation. ‘lana pascalOstrath 36k 1 sove hight and Whelan, M. J, 19 . Soc. A, 263, www.npl.co.uk