Professional Documents
Culture Documents
of minority-carrier
mobility
and recombination
f7= 1/(2n
=e-[
D,=
(3)
(kT/q)&.
TEC)
(kT/ql,)
(1)
40
and
0
7-fj=L;/3/(2Dn) ,
(2)
El
30
El
El
cl.
3
20
3
El
10
:
0
i
200
100
I
300
-UK)
FIG. 1. Gain vs temperat .xe.
1268
Downloaded 29 Jul 2007 to 128.84.158.108. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
6oool
5000
4000
ru
2.E
3000
0.0
5.
2000
1000
0ooo1000010
0010
0 IO
1 .oo
Frequency (GHz)
/0
(4)
p = r/rEC,
1.2
I
El
n
c
II (300K)
0 (87K)
n
0.2
u
0.0
0.1
0.2
0.3
0.4
0.5
(159K)
0.6
0.7
i/l, (1lmA)
FIG. 3. Inverse cutoff frequency vs inverse collector current for three
different values of temperature.
1269
200
300
Temperature T (K)
I
100
is raised,
the calculated and the experimental curves cross one another, and at 300 K the calculated value is 1.7 times higher
than the experimental value. The measured change of mobility is approximately proportional to l/r, while the calculated mobility changes about half as fast. The origin of
this discrepancy is not clear at present. However, it may be
related in part to neglect of majority-carrier freezeout at
acceptor sites in the theoretical calculation.
As the temperature is increased, 7, increases as expected for radiative recombination as the hole distribution
becomes nondegenerate. The value of 7, was calculated
using Eq. (4) combined with gain measurements. At room
temperature, we found r, = 3.2 ns for a device with an
emitter area of 30 X 30 ,um* compared to rr = 2 ns obtained
earlier for a 20x 20 pm* sample.* At 87 K, rr = 1.1 ns
compared to 1.0 ns of the previous data which were taken
at 77 K. At the lower temperatures, the dependence on the
emitter area is much weaker. This suggests that surface
recombination is important at room temperature, but is
much less important at the lower temperatures. The behavior of recombination lifetime, rr is depicted in Fig. 5.
At 300 K the radiative lifetime has been calculated to
be between 1 and 2 ns by Casey and Stern6 at 4X lo*
cm - 3p-type GaAs compared to our measured value of 3.2
ns. We feel that this is a reasonable agreement.
In conclusion, the electron mobility and the electron
Beyzavi et al.
1269
Downloaded 29 Jul 2007 to 128.84.158.108. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
,
100
I
200
I
300
T (4
1270
calcuIated curve changes much more slowly than the experimental curve.
The recombination is found to be almost all radiative
recombination at 87 K. At room-temperature surface recombination is also important. We have found r, = 3.2 ns
at 300 K and 1 to :! ns at 87 K. These values are in good
agreement with the previously measured* values of 2 ns for
room temperature and 1.0 ns for 77 K, and theoretically
calculated value of 1.1 ns at 297 K for radiative recombination by Casey and Stern. The dependence of TVon area
suggests that the surface is important at room temperature
but not at low temperatures.
We wish to acknowledge Keith Jenkins, Ali Ghiasi,
Richard Kiehl, David Frank, and Paul Solomon for technical discussions. We also acknowledge support from the
IBM SUR contract at the University of Minnesota.
W. Walukiewicz, J. Lagowski, L. Jastrzebski, and H. C. Gatos, J. Appl.
Phys. 50, 5040 (1979).
2M. I. Nathan, W. P. Dumke, K. Wrenner, S. Tiwari, S. L. Wright, and
K. A. Jenkins, Appl. Phys. Lett. 52, 654 ( 1988).
3S. M. Sze, Physics of Semiconductor Devices (Wiley. New York, 1987).
p. 158.
4R, K. Ahrenkiel, 13. J. Dunlavy. D. Greenberg, J. Schlupmann, H. C.
Hamaker, and H. F. MacMillan, Appl. Phys. Lett. 51, 776 ( 1987).
S. Tiwari and S. Wright, Appl. Phys. Lett. 56, 563 ( 1990).
bH. C. Casey, Jr. and Frank Stern, J. Appt. Phys. 47, 631 (1976).
Beyzavi et al.
1270
Downloaded 29 Jul 2007 to 128.84.158.108. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp