Current mirrors

Current mirrors are important blocks in electronics. They are widely used in
several applications and chips, the operational amplifier being one of them.
Current mirrors consist of two branches that are parallel to each other and
create two approximately equal currents. This is why these circuits are called
current mirrors. These currents are used to load other stages in circuits and
they are designed in such a way so that current is constant and independent
of loading.
Current mirrors come in different varieties:

Simple current mirror (BJT and MOSFET)

Base current corrected simple current mirror
Widlar current source
Wilson current mirror (BJT and MOSFET)
Cascoded current mirror (BJT and MOSFET)

For best performance, transistors should be matched, temperature should be

the same for all devices and collector-base/drain-gate voltages should also be
matched. This will provide equal currents on both sides of the current mirror.
All of the circuits have a compliance voltage which is the minimum output
voltage required to maintain correct circuit operation: the BJT should be in the
active/linear region and the MOSFET should be in the active/saturation
region.

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Simple current mirror

Two implementations exist for the simple current mirror: BJT and MOSFET.
BJT
The BJT implementation of the simple current mirror is used as a block in the
operational amplifier.
VCC

Vo

3.600V
1.472mA
R1

VCC

IREF

Vo

Io

2k

3.600V
V1
3.6Vdc

Q1
Q2

1.425mA

23.47uA
23.47uA 655.3mV

Q2N3642

650.0mV
V2

1.425mA
I

Q2N3642
-1.449mA

-1.449mA

0.65Vdc
1.425mA
0V

1.472mA
0V

0V

Simple current mirror (BJT)

1.5mA

1.0mA

0.5mA

0A

-0.5mA
0V
IC(Q2)

50mV
-I(R1)

100mV

150mV

200mV

250mV

300mV

350mV

400mV

450mV

500mV

V_V2

Simple current mirror currents (BJT)

The compliance voltage is roughly given by

Vo (min) VCE 2( sat ) 0.2V

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The collector resistor is given by

VCC VBE1
I REF

The collector current is given by

VVBE
V
I C I S e T 11 CE

VA

From KCL analysis at the collector of Q1, the reference current is defined as
I REF I C 2 I B I C 2

I C 1
o
o
IC

where o is the value of for VCB=0V (Q1 is diode-connected).

The output current is given by

VVBE
V
I o I C I S e T 11 CE

VA

When VCB=0V the Early effect is eliminated and it does not affect the
equation. As the value of VCB increases, values for both transistors no
longer match and the output current is no longer flat but its tilted with a slope
of 1/ro.
The output resistance is
R0 r0

V A VCE
Io

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MOSFET
The MOSFET implementation of the simple current mirror is as follows:
VDD

Vo

3.600V
537.8uA
R1
IREF

VDD

Vo

Io

2k

3.600V
V1
3.6Vdc

2.524V
M2

537.8uA
M1
0A
M2N6760

2.500V
V2

537.8uA

0A
M2N6760

2.5Vdc
537.8uA
0V

537.8uA
0V

0V

Simple current mirror (MOSFET)

600uA

400uA

200uA

0A
0V
-I(R1)

0.4V
ID(M2)

0.8V

1.2V

1.6V

2.0V

2.4V

2.8V

3.2V

3.6V

V_V2

Simple current mirror currents (MOSFET)

The parameters for the transistors are W=900n, L=90n and VTN=0.25V.
The compliance voltage is roughly given by
Vo (min) V DS 2( sat ) VGS 2 VTN 2.5V 0.25V 2.25V

Note: the subscript N is added to VT to avoid confusion with the thermal

voltage (VT=25mV).

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The drain resistor is given by

R

V DD VGS 1
I REF

Both transistors work in the active/saturation region and their drain current is
given by
I D K n VGS VTN 1 V DS VGS VTN
2

Since no current enters the gates, reference and output currents match.
When VDS-VGS+VTN=0V the channel-length modulation is eliminated and it
does not have affect the equation. If the value of VDS-VGS+VTN0V, the output
current is no longer flat but its tilted with a slope of 1/ro.
Currents are related by the following expression:
Io
I REF

W2 / L2
W1 / L1

1 V DS 2

1 V DS1

The above relationship says that current in the two branches of the current
mirror depends on the aspect ratio of the two transistors.
The output resistance is
R0 r0

1
I o

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Base current corrected simple current mirror

The currents of the BJT implementation of the simple current mirror are
somewhat dependent on the value of for both transistors. In order to
minimize this dependency and decrease the error in current matching, a
transistor is added to the original simple current mirror circuit.
VCC

Vo

3.600V
1.194mA

VCC

R1

3.600V

IREF

VCC

2k

Q3
1.211V
913.6nA

Q1
1.193mA
Q2N3642

Vo

Io

3.600V
38.73uA

V1

Q2N3642
-39.64uA
650.5mV

19.82uA

1.200V
V2

3.6Vdc
Q2

19.82uA

-1.213mA

1.193mA

1.2Vdc
1.193mA
0V

1.233mA
0V

Q2N3642
-1.213mA

0V

Base current corrected simple current mirror

1.2mA

0.8mA

0.4mA

0A

-0.4mA
0V
-I(R1)

50mV
IC(Q2)

100mV

150mV

200mV

250mV

300mV

350mV

400mV

450mV

500mV

V_V2

Base current corrected simple current mirror currents

The compliance voltage is roughly given by
Vo (min) VCE 2( sat ) 0.2V

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The collector resistor is given by

R

VCC VBE 3 VBE1

I REF

The collector current is given by

VVBE
V
I C I S e T 11 CE

VA

From KCL analysis at the collector of Q1, the reference current is defined as

I REF I C1 I B 3 I C

2I C
V V BE 3 V BE1
CC
1
R

The output current is given by

VVBE
V
I o I C I S e T 11 CE

VA

The output resistance is

R0 r0

V A VCE
Io

Note: the MOSFET implementation of this circuit does not exist since current
does not enter the gate of a MOSFET.

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Widlar current source

The Widlar current source, a variation of the simple current mirror, was
advanced by Bob Widlar in the mid 1960s. The only difference between the
two circuits is the introduction of an emitter resistor. This additional
component forces the currents in the two branches of the circuit to be unequal
so this is why the circuit is called a source rather than a mirror. This specific
circuit is used as a block in the operational amplifier.
VCC

Vo

3.600V
1.019mA
R1

VCC

IREF

Vo

Io

2.9k

3.600V

700.0mV

V1

V2
3.6Vdc

Q1
Q2

992.6uA
Q2N3642

9.188uA
16.88uA 645.9mV

-1.010mA
R2

506.7uA

0.7Vdc
506.7uA
0V

1.019mA
0V

Q2N3642
515.9uA
-515.9uA
17.54mV

34
0V

Widlar current source

1.2mA

0.8mA

0.4mA

0A

-0.4mA
0V
-I(R1)

50mV
IC(Q2)

100mV

150mV

200mV

250mV

300mV

350mV

400mV

450mV

500mV

V_V2

Widlar current source currents

Note: the circuit presented here has been designed so that IC1 is twice the
value of IC2.
The compliance voltage is roughly given by

Vo (min) VCE 2 ( sat ) V R 2 0.2V I E 2 R2

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The collector resistor is given by

R1

VCC V BE1
I REF

The base voltage is defined by

VB V BE1 V BE 2 I E 2 R2 VBE 2 I o R2

The difference in base-emitter voltages is

VBE1 V BE 2 I o R2

The base-emitter voltages are given by

I
VBE1 VT ln REF
IS

and

I
VBE 2 VT ln o
IS

Subtracting base-emitter voltages again,

I
VBE1 VBE 2 VT ln REF
IS

I
I
VT ln o VT ln REF

IS
Io

so that
I
VBE1 V BE 2 I o R2 VT ln REF
Io

and the emitter resistor is

R2

VT I REF
ln
I o I o

Note that if the condition IREF=Io is forced, the argument of the logarithm is 1
which produces 0 and therefore a 0 resistance (simple current mirror
configuration). This is why reference and output currents do not match.
The output resistance is higher than the one for the simple current mirror:
Ro ro 1 g m R2 || r

Note: the MOSFET implementation of the Widlar current source is not used
and if it were, it would behave similarly to the simple current mirrors.

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Wilson current mirror

Two implementations exist for the Wilson current mirror: BJT and MOSFET.
This circuit employs 3 transistors (4 in the improved version). The major
advantages of this circuit over the simple current mirror is that it has a higher
output impedance and strongly reduces the base error of the BJT
implementation.
BJT
The BJT implementation of the Wilson current mirror was invented by George
R. Wilson at Tektronix in 1967.
Ro

VCC

Vo

3.600V
2.266mA
R1
IREF

Io

VCC

1k
Q3
35.55uA
1.334V

3.600V

Q2

666.9mV
35.07uA
35.07uA

-2.265mA

V2
3.6Vdc

666.9mV

2.230mA

1.400V

V1

Q2N3642
-2.281mA

Q1

Q2N3642

2.245mA

Vo

1.4Vdc
2.245mA
0V

2.266mA
0V

2.210mA

Q2N3642
-2.246mA
0V

0V

Wilson current mirror (BJT)

4.0mA

2.0mA

0A

-2.0mA

-4.0mA
0V
-I(R1)

0.2V
IC(Q3)

0.4V

0.6V

0.8V

1.0V

1.2V

1.4V

1.6V

1.8V

2.0V

V_V2

Wilson current mirror currents (BJT)

10

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The compliance voltage is roughly given by

Vo (min) V BE 2 VCE 3( sat ) 0.7V 0.2V 0.9V

The output resistance is very high and its given by

Ro

ro 3
2

An improved version of the above circuit exists. It uses an additional transistor

which improves linearity when higher current levels are needed.
Ro

VCC

Vo

3.600V
2.265mA
R1
I

1k

IREF

Io
1.335V
Q4
2.195mA
Q2N3642
667.9mV

34.84uA

Q3
35.83uA

-2.230mA

Q2

-2.265mA

1.400V

V1

Q1
667.1mV
35.35uA
35.35uA

Vo

3.600V

Q2N3642
-2.300mA

2.230mA
Q2N3642

VCC

2.264mA

V2
3.6Vdc

667.1mV
2.230mA

1.4Vdc
2.264mA
0V

2.265mA
0V

Q2N3642
-2.265mA
0V

0V

Improved Wilson current mirror (BJT)

4.0mA

2.0mA

0A

-2.0mA

-4.0mA
0V
-I(R1)

0.2V
IC(Q3)

0.4V

0.6V

0.8V

1.0V

1.2V

1.4V

1.6V

1.8V

2.0V

V_V2

Improved Wilson current mirror currents (BJT)

11

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MOSFET
The MOSFET implementation of the Wilson current mirror looks like the
following:
Ro

VDD

Vo

3.600V
319.5uA
R1
IREF

Io

VDD

2k

2.961V

M3

318.8uA

0A

3.600V
V1

IRF830
M1
319.5uA

M2

0A

0A

IRF830

IRF830

2.700V
V2

3.6Vdc

1.480V
1.480V

Vo

2.7Vdc
318.8uA
0V

319.5uA
0V

318.8uA

0V

0V

Wilson current mirror (MOSFET)

400uA

300uA

200uA

100uA

0A
0V
-I(R1)

0.4V
ID(M3)

0.8V

1.2V

1.6V

2.0V

2.4V

2.8V

3.2V

3.6V

V_V2

Wilson current mirror currents (MOSFET)

The parameters for the transistors are W=1, L=45n and VTN=0.3V.
The compliance voltage is roughly given by
Vo (min) VGS 2 V DS 3( sat ) VGS 2 VGS 3 VTN 1.5V 1.5V 0.3V 2.7V

12

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Currents are related by the following expression:

Io
I REF

W2 / L2
W1 / L1

1 V DS 2

1 V DS1

The output resistance is very high and its given by

Ro ro 3 2 g m 3 ro1

An improved version of the above circuit exists. It uses an additional transistor

which improves overall match in the two branches.
Ro

VDD

Vo

3.600V
319.0uA
R1
I

IREF

Io

2k

VDD

2.962V

M4
319.0uA

M3

319.0uA

0A

0A

IRF830

IRF830

1.481V
M1
319.0uA
0A
IRF830

3.600V
V1

M2

V2
2.7Vdc
319.0uA
0V

319.0uA
0V

319.0uA

0A

IRF830

2.700V

3.6Vdc

1.481V
1.481V

Vo

0V

0V

Improved Wilson current mirror (MOSFET)

400uA

300uA

200uA

100uA

0A
0V
-I(R1)

0.4V
ID(M3)

0.8V

1.2V

1.6V

2.0V

2.4V

2.8V

3.2V

3.6V

V_V2

Improved Wilson current mirror currents (MOSFET)

13

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Cascoded current mirror

The cascoded current mirror resembles a stack of two simple current mirrors
and it looks very much like the improved version of the Wilson current mirror
(with a diode connection at Q1/M1 instead of Q2/M2). Therefore, this circuit is
made up by 4 transistors. The major advantages over the simple current
mirror is that this circuit has a higher output impedance and it eliminates Early
effect with the MOSFET implementation.
BJT
The BJT implementation of the cascoded current mirror is as follows:
Ro

VCC

Vo

3.600V
2.267mA
R1
I

1k

IREF

Io
1.333V

Q4
2.198mA
Q2N3642

Q3

2.131mA

33.87uA

VCC
3.600V

Q2N3642
-2.164mA

-2.233mA

Q2N3642

Q1
2.164mA

Q2

666.3mV
34.40uA
34.40uA

-2.199mA

1.400V

V1

667.2mV
666.3mV

Vo

34.89uA

V2
3.6Vdc

2.164mA

1.4Vdc
2.131mA
0V

2.267mA
0V

Q2N3642
-2.199mA
0V

0V

Cascoded current mirror (BJT)

4.0mA

2.0mA

0A

-2.0mA

-4.0mA
0V
-I(R1)

0.2V
IC(Q3)

0.4V

0.6V

0.8V

1.0V

1.2V

1.4V

1.6V

1.8V

2.0V

V_V2

Cascoded current mirror currents (BJT)

14

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The compliance voltage is roughly given by

Vo (min) VBE 2 V BE 4 V BE 3 VCE 3( sat ) VBE 2 VCE 3( sat ) 0.7V 0.2V 0.9V

Note: VBE4 and VBE3 cancel each other so the base and collector voltages of
Q2 are the same.
The collector resistor is given by
R

VCC VBE 4 V BE1

I REF

The output resistance is very high and its given by

Ro

15

ro 3
2

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MOSFET
The MOSFET implementation of the cascoded current mirror is as follows:
Ro

VDD

Vo

3.600V
231.1uA
R1
I

1k

IREF

Io
3.369V

M4
231.1uA

M3

0A

230.9uA

IRFJ132

VDD
3.600V

IRFJ132

1.685V

V1

1.609V

M1
231.1uA
0A

M2
1.685V

IRFJ132

2.700V
V2

3.6Vdc

230.9uA

2.7Vdc
230.9uA
0V

231.1uA
0V

0A
IRFJ132

Vo

0A

0V

0V

Cascoded current mirror (MOSFET)

300uA

200uA

100uA

0A
0V
-I(R1)

0.4V
ID(M3)

0.8V

1.2V

1.6V

2.0V

2.4V

2.8V

3.2V

3.6V

V_V2

Cascoded current mirror currents (MOSFET)

The parameters for the transistors are W=450n, L=45n and VTN=0.2V.
The compliance voltage is roughly given by
Vo (min) VGS 2 VGS 4 VGS 3 V DS 3( sat ) VGS 2 VDS 3( sat ) VGS 2 VGS 3 VTN
2VGS VTN 2 1.6V 0.2V 3.0V

16

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Note: the compliance voltage appears to be a little lower (around 2.4V).

The drain resistor is given by
R

V DD VGS 4 VGS 1
I REF

Currents in each branch are related by the following expression:

Io
I REF

W 2 / L2
W1 / L1

Note: the channel-length modulation factor is not present here since for this
circuit there is no Early effect.
The output resistance is very high and its given by

Ro ro 2 ro 3 1 g m 3 ro 2

17

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