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Spectroscopy (XPS)
David Echevarra Torres
University of Texas at El Paso
College of Science
Chemistry Department
Outline
XPS Background
X-Rays
XPS Background
XPS Instrument
How Does XPS Technology Work?
Auger Electron
Cylindrical Mirror Analyzer (CMA)
Equation
KE versus BE
Spectrum Background
Identification of XPS Peaks
X-rays vs. e- Beam
XPS Technology
Irradiate the sample surface, hitting the core electrons (e-) of the
atoms.
The core e-s are local close to the nucleus and have
binding energies characteristic of their particular element.
B.E.
Valence eCore e-
Atom
p+
Energy Levels
XPS Instrument
Vacumm Level
Fermi Level
BE
Lowest state of
energy
XPS Instrument
XPS Instrument
XPS Instrument
X-Ray Source
Ion Source
SIMS Analyzer
Sample introduction
Chamber
X-Ray source
Ion source
Detector
SIMS
Analyzer
Sample introduction
Chamber
Sample
Holder
sample
CMA
Slits
Roughing Pump
Ion Pump
Al Ka (1486.6eV)
Mg Ka (1253.6 eV)
Ultrahigh vacuum
environment to eliminate
excessive surface
contamination.
Cylindrical Mirror Analyzer
(CMA) measures the KE of
emitted e-s.
The spectrum plotted by the
computer from the analyzer
signal.
The binding energies can be
determined from the peak
positions and the elements
present in the sample
identified.
Contamination of surface
X-Ray
Free electron
Removing contamination
Valence electrons
proton
neutron
electron vacancy
e- lower layer
but no collisions
Outer surface
e- lower layer
with collisions
X-Rays
Inner surface
electron
Core electrons
Atoms layers
Auger Electron
Free ereleased to
analyze
e-
e- of high energy
that will occupy the
vacancy of the core
level
Electron beam
from the e- gun
Outer surface
Inner surface
1
e- gun
e- Vacancy
Atom layers
The voltages on the CMA for XPS and Auger e-s are
different.
Equation
X-Rays
Source
KE=hv-BE-
Slit
0V
Sample
Holder
0V
+V
+V
+V
+V
0V
0V
KE
hv
BE
Detector
Equation
KE versus BE
KE can be plotted depending
on BE
KE=hv-BE-
The equation will calculate the energy needed to
get an e- out from the surface of the solid.
# of electrons
Binding energy
0 eV
(eV)
N = noise
# of electrons
XPS Spectrum
N4
N3
N2
N1
Binding energy
Ntot= N1 + N2 + N3 + N4
O 1s
XPS
Spectrum
Auger Spectrum
O Auger
Characteristic of Auger graphs
The graph goes up as KE
increases.
O because
of Mg source
C
O 2s
Al
Al
X-Rays
Electron Beam
XPS Technology
Consider as nondestructive
References
Applications in the
industry:
Provide information
about surface layers
or thin film structures
Polymer surface
Catalyst
Corrosion
Adhesion
Semiconductors
Dielectric materials
Electronics packaging
Magnetic media
Thin film coatings
Acknowledgements