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BYW77P/PI-200

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES


FEATURES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION :
Insulating voltage = 2500 V DC
Capacitance = 12 pF
A
K

DESCRIPTION
Single chip rectifier suited for switchmode power
supply and high frequency DC to DC converters.
Packaged in SOD93, or DOP3I this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.

SOD93
(Plastic)

isolated
DOP3I
(Plastic)

BYW77P-200

BYW77PI-200

ABSOLUTE MAXIMUM RATINGS


Symbol
IF(RMS)
IF(AV)

Parameter
RMS forward current
Average forward current
= 0.5

TOP3I

Tc=100C

25

tp=10ms
sinusoidal

500

- 40 to + 150
- 40 to + 150

C
C

Value

Unit

200

Storage and junction temperature range

Parameter
Repetitive peak reverse voltage

Ed : 2C

25

Tstg
Tj

October 1999

50
Tc=125C

Surge non repetitive forward current

VRRM

Unit

SOD93

IFSM

Symbol

Value

1/5

BYW77P/PI-200
THERMAL RESISTANCE
Symbol
Rth (j-c)

Parameter
Junction to case

Value

Unit

SOD93

1.0

C/W

DOP3I

1.8

ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
IR *

Test Conditions
Tj = 25C

Min.

Typ.

VR = VRRM

Tj = 100C
VF **

Max.

Unit

25

2.5

mA
V

Tj = 125C

IF = 20 A

0.85

Tj = 125C

IF = 40 A

1.00

Tj = 25C

IF = 40 A

1.15

Pulse test : * tp = 5 ms, duty cycle < 2 %


** tp = 380 s, duty cycle < 2 %

To evaluate the conduction losses use the following equation :


P = 0.7 x IF(AV) + 0.0075 x IF2(RMS)

RECOVERY CHARACTERISTICS
Symbol
trr

Test Conditions
Tj = 25C

Min.

Typ.

Max.

IF = 0.5A
IR = 1A

Irr = 0.25A

35

IF = 1A
VR = 30V

dIF/dt = -50A/s

50

Unit
ns

tfr

Tj = 25C

IF = 1A
VFR = 1.1 x VF

tr = 5 ns

10

ns

VFP

Tj = 25C

IF = 1A

tr = 5 ns

1.5

2/5

BYW77P/PI-200
Fig.1 : Average forward power dissipation versus
average forward current.
P F(av)(W)

30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0

Fig.2 : Peak current versus form factor.

=0.2

=0.1

=0.05

=0.5

=1

400

IM

P=20W

=tp/T

300

tp

200

P=30W

100
I F(av)(A)

10

15

=tp/T

20

P=40W

tp

25

30

Fig.3 : Forward voltage drop versus forward


current (maximum values).

0
0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

Fig.4 : Relative variation of thermal impedance


junction to case versus pulse duration.
1.0

VFM(V)

1.8
1.6

I M(A)

500

Zth(j-c) (tp. )
K =
Rth(j-c)

Tj= 125 oC

1.4

=0.5

0.5

1.2

=0.2

1.0
= 0 .1

0.8
0.6

0.2

0.4
0.2

Single pulse

IFM(A)

0.0

0.1

10

100

300

1.0E-03

Fig.5 : Non repetitive surge peak forward current


versus overload duration.
(BYW81P)
300

IM(A)

1.0E-02

1.0E-01

tp
1. 0E+00

Fig.6 : Non repetitive surge peak forward current


versus overload duration.
(BYW81PI)
250

250

=tp/T

tp(s)

0.1

IM(A)

200

200
150

Tc=25 oC

150

Tc=25 oC
Tc=75 o C

100

100
IM

50
0
0.001

50

t(s)

=0.5

0.01

Tc=50 o C

IM

Tc=125 o C

t(s)

=0.5

0.1

0
0.001

Tc=100 o C

0.01

0.1

1
3/5

BYW77P/PI-200
Fig.7 : Average current
temperature.
(duty cycle : 0.5) (SOD93)
30

versus

ambient

IF(av)(A)

30
Rth(j-a)=Rth(j-c)

=0.5

ambient

Rth(j-a)=Rth(j-c)

=0.5

20

versus

IF(av)(A)

25

25

20
15

15
=tp/T

10
5

Fig.8 : Average current


temperature.
(duty cycle : 0.5) (DOP3I)

tp

Rth(j-a)=15 o C/W

5
Tamb( o C)

0
0

20

40

60

80

100

120

140

160

Fig.9 : Junction capacitance versus reverse


voltage applied (Typical values).

20 0
1 90
1 80
1 70
1 60

C(pF)
F=1Mhz Tj=25 oC

Tamb( o C)

20

40

60

80

100

120

140

160

Fig.10 : Recovery charges versus dIF/dt.

QRR(nC)

70

90%CONFIDENCE

IF=IF(av)
Tj=100 OC

60
50
40

Tj=25 O C

30
20

11 0
1 00
1

10

VR(V)
10

1 00

2 00

Fig.11 : Peak reverse current versus dIF/dt.

dIF/dt(A/us)

0
1

10

100

Fig.12 : Dynamic parameters versus junction


temperature.
QRR;IRM[Tj]/QRR;IRM[Tj=125o C]

IRM(A)
1.50

90%CONFIDENCE

2.5

tp

Rth(j-a)=15 o C/W

0
0

80

1 50
1 40
1 30
1 20

3.0

=tp/T

10

IF=IF(av)

1.25

Tj=100 O C

2.0

1.00

1.5

0.75

1.0

0.50

IRM
QRR

Tj=25 O C

0.5
0.0
1
4/5

0.25

dIF/dt(A/us)
20

10

1 00

0.00
0

Tj( o C)

25

50

75

100

125

150

BYW77P/PI-200
PACKAGE MECHANICAL DATA
DOP3I (isoluted)
DIMENSIONS
REF.

Millimeters
Min.
Max.

Inches
Min.
Max.

A
B
C
D
E
F
G
H
K
L
N
P
R

4.4
4.6
1.45
1.55
14.35 15.60
0.5
0.7
2.7
2.9
15.8
16.5
20.4
21.1
15.1
15.5
3.4
3.65
4.08
4.17
10.8
11.3
1.20
1.40
4.60 typ.

0.173 0.181
0.057 0.061
0.565 0.614
0.020 0.028
0.106 0.114
0.622 0.650
0.815 0.831
0.594 0.610
0.134 0.144
0.161 0.164
0.425 0.444
0.047 0.055
0.181 typ.

Cooling method : C
Marking : Type number
Weight : 4.52 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N

5/5

BYW77P/PI-200
PACKAGE MECHANICAL DATA
SOD93
DIMENSIONS
REF.

Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.

A 4.70
4.90 0.185
0.193
C 1.17
1.37 0.046
0.054
D
2.50
0.098
D1
1.27
0.050
E 0.50
0.78 0.020
0.031
F 1.10
1.30 0.043
0.051
F3
1.75
0.069
G 10.80
11.10 0.425
0.437
H 14.70
15.20 0.578
0.598
L
12.20
0.480
L2
16.20
0.638
L3
18.0
0.709
L5 3.95
4.15 0.156
0.163
L6
31.00
1.220
O 4.00
4.10 0.157
0.161

Cooling method : C
Marking : Type number
Weight : 3.79 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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