Final EXAMINATION

Basic Electronics
NAME:

DATE OF EXAM:
SUBJECT/SECTION

INSTRUCTOR:

I. INSTRUCTION: Cross-out the letter that corresponds as the best answer. (Analyze the problem carefully). STRICKLY NO
ERASURE
1) PNP transistor has the following arrangement.
A. P-type emitter, N-type collector, P-type base
B. P-type base, N-type emitter, P-type collector
C. P-type emitter, N-type base, P-type collector
D. P-type collector, N-type base, P-type emitter
2) ______ is the term used to express the ratio of change
in the DC collector current to a change in base current in a
bipolar transistor.
A. Alpha
C. Gamma
B. Beta
D. Delta
3) Name of the semiconductor device that has three or
more elements.
A. Resistor
C. Thermistor
B. Collector
D. Transistor
4) Improper biasing of a transistor circuit leads to
A. excessive heat production at collector terminal
B. distortion in output signal
C. faulty location of load line
D. heavy loading of emitter terminal
5) The minority current component of a transistor is called
_____.
A. Leakage current C. Cut-off current
B. Emitter current
D. All of the above
6) In a common emitter amplifier, the capacitor that
connects emitter to ground is called _____.
A. limiting capacitor
B. bypass capacitor
C. coupling capacitor
D. decoupling capacitor
7) Solve the collector current if base current is 200 mA and
the current gain is 20
A.1 A
C. 10 A
B. 4 A
D. 40 A
8) Calculate the common emitter amplification factor of a
transistor with a common base amplification factor of 0.99.
A. 10
B. 50

C.100
D.200

9) If the base-emitter junction is reverse biased and the

base-collector junction is forward biased, the transistor will
be at what region of operation?
A. active
C. saturation
B. cut-off
D. breakdown
10) ICBO of an ideal transistor
A. increase as temperature increases
B. increase as temperature decreases
C. is not affected by the temperature change
D. is zero milliampere
11) In the DC mode, the levels of I C and IE due to the
majority carriers are related by the quantity _____.
A. alpha
C. gamma
B. beta
D. A and B
12) The flow of electron in an NPN transistor when used in
electronic circuit is from _____.
A. base to emitter
C. collector to base
B. base to collector D. emitter to collector
13) A BJT has

=0.99 , Ib = 25A and ICBO =

200nA. Find the emitter current.

A. 2.495 mA
C. 3.7 mA
B. 2.518 mA
D. 3.65 mA
14) Determine the dc current gain for a transistor where Ib
= 50A and Ic = 3.65 mA
A. 2.495 mA
C. 3.7 mA
B. 2.518 mA
D. 3.65 mA
15) If the emitter current of a transistor is 8mA and Ib is
1/100 of Ic, determine the levels of Ic and Ib.
A. 79.21A, 7.921mA
C. 7.921A, 79.21mA
B. 43A, 64.9mA
D. 43mA, 64.9A

II. Solve the following

1)

For the circuit, find Ib, Ic, and Vce.

2)

For the transistor circuit in the figure let B= 100

and VBE = 0.7 V. Determine Vo and Vce

3)

Find Ib, Ic and vo in the transistor circuit.

Assume that B=50