FDD5N50TM

FDD5N50
N-Channel UniFETTM II MOSFET

500 V, 4 A, 1.4
Features
Description
RDS(on) = 1.15 (Typ.) @ VGS = 10 V, ID = 2 A
UniFETTM MOSFET is Fairchild Semiconductors high voltage

MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Low Gate Charge (Typ. 11 nC)

Low Crss (Typ. 5 pF)
100% Avalanche Tested
RoHS Compliant
Applications
LCD/LED/PDP TV
Lighting
Uninterruptible Power Supply
D
G
S
D-PAK
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
FDD5N50
500
Unit
V
30
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
2.4
- Pulsed
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
16
(Note 2)
256
mJ
(TC = 25oC)
40
- Derate above 25oC
0.3
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,
1/8 from Case for 5 Seconds
TL
(Note 1)
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
FDD5N50
RJC
Thermal Resistance, Junction to Case, Max.
1.4
RJA
Thermal Resistance, Junction to Ambient, Max.
110
2008 Fairchild Semiconductor Corporation

FDD5N50 Rev. C0
Unit
o
C/W
www.fairchildsemi.com
FDD5N50 N-Channel UniFETTM II MOSFET
April 2013
Device Marking
FDD5N50
Device
FDD5N50TM
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
Quantity
2500
FDD5N50
FDD5N50TM_WS
D-PAK
380mm
16mm
2500
FDD5N50
FDD5N50TF
D-PAK
380mm
16mm
2000
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient
ID = 250A, VGS = 0V, TJ = 25oC
500
ID = 250A, Referenced to 25oC
0.6
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
10
IGSS
Gate to Body Leakage Current
VGS = 30V, VDS = 0V
100
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
5.0
Static Drain to Source On Resistance
VGS = 10V, ID = 2A
1.15
1.4
gFS
Forward Transconductance
VDS = 20V, ID = 2A
4.3
VDS = 25V, VGS = 0V

f = 1MHz
480
640
pF
66
88
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain Miller Charge
VDS = 400V, ID = 5A
VGS = 10V
(Note 4)
pF
11
15
nC
nC
nC
13
36
ns
22
54
ns
28
66
ns
20
50
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 5A
RG = 25
(Note 4)
Drain-Source Diode Characteristics

IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
16
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 4A
1.4
trr
Reverse Recovery Time
300
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 5A

dIF/dt = 100A/s
1.8
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 32mH, IAS = 4A, VDD = 50V, RG = 25, Starting TJ = 25C
3: ISD 4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4: Essentially Independent of Operating Temperature Typical Characteristics

FDD5N50 Rev. C0
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics

20
20
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
ID,Drain Current[A]
10
ID,Drain Current[A]
Figure 2. Transfer Characteristics
150 C
o
25 C
1
o
-55 C
*Notes:
1. 250s Pulse Test
0.1
*Notes:
1. VDS = 20V
2. 250s Pulse Test
2. TC = 25 C
0.04
0.1
1
10
VDS,Drain-Source Voltage[V]
0.1
30
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
IS, Reverse Drain Current [A]
70
2.5
VGS = 10V
2.0
VGS = 20V
1.5
150 C
10
o
25 C
*Notes:
1. VGS = 0V
*Note: TJ = 25 C
1.0
0
6
ID, Drain Current [A]
1
0.4
12
Figure 5. Capacitance Characteristics
Ciss
1.6
10
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
750
2. 250s Pulse Test
0.8
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
VGS, Gate-Source Voltage [V]
1000
Capacitances [pF]
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature
3.0
RDS(ON) [],
Drain-Source On-Resistance
5
6
7
VGS,Gate-Source Voltage[V]
*Note:
1. VGS = 0V
2. f = 1MHz
500
Coss
250
VDS = 100V
VDS = 250V
VDS = 400V
Crss
0
0.1
*Note: ID = 5A
0
1
10
VDS, Drain-Source Voltage [V]

FDD5N50 Rev. C0
30
4
8
Qg, Total Gate Charge [nC]
12
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250A
0.8
-75
-25
25
75
125
o
TJ, Junction Temperature [ C]
2.5
2.0
1.5
1.0
0.0
-75
175
Figure 9. Maximum Safe Operating Area
-25
25
75
125
o
TJ, Junction Temperature [ C]
175
Figure 10. Maximum Drain Current

vs. Case Temperature
4.5
30
30s
10
100s
*Notes:
1. VGS = 10V
2. ID = 2A
0.5
1ms
10ms
DC
Operation in This Area

is Limited by R DS(on)
0.1
*Notes:
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
1
10
100
VDS, Drain-Source Voltage [V]
0
25
800
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
Thermal Response [ZJC]
1
0.5
0.2
PDM
0.1
0.1
t1
t2
0.05
*Notes:
0.02
1. ZJC(t) = 1.4 C/W Max.

2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.01
Single pulse
0.01
-5
10

FDD5N50 Rev. C0
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
10
10
Typical Performance Characteristics (Continued)
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms

FDD5N50 Rev. C0
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop

FDD5N50 Rev. C0
Mechanical Dimensions
D-PAK
Dimensions in Millimeters

FDD5N50 Rev. C0
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I64

FDD5N50 Rev. C0
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
FPS
Sync-Lock
2Cool
F-PFS
AccuPower
*
FRFET
PowerTrench
AX-CAP *
SM
Global Power Resource
PowerXS
BitSiC
TinyBoost
Green Bridge
Programmable Active Droop
Build it Now
TinyBuck
Green FPS
QFET
CorePLUS
TinyCalc
QS
Green FPS e-Series
CorePOWER
TinyLogic
CROSSVOLT
Quiet Series
Gmax
TINYOPTO
CTL
GTO
RapidConfigure
TinyPower
Current Transfer Logic
IntelliMAX
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DEUXPEED
ISOPLANAR
TinyWire
Dual Cool
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time
TranSiC
EcoSPARK
and Better
SignalWise
TriFault Detect
EfficentMax
MegaBuck
SmartMax
TRUECURRENT*
ESBC
MICROCOUPLER
SMART START
SerDes
MicroFET
Solutions for Your Success
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SPM
STEALTH
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SuperFET
MillerDrive
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SuperSOT-3
MotionMax
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UniFET
SuperSOT-6
mWSaver
FACT
VCX
SuperSOT-8
OptoHiT
FAST
VisualMax
SupreMOS
OPTOLOGIC
FastvCore
VoltagePlus
OPTOPLANAR
SyncFET
FETBench
XS

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FDD5N50

N-Channel UniFETTM II MOSFET

RDS(on) = 1.15 (Typ.) @ VGS = 10 V, ID = 2 A

UniFETTM MOSFET is Fairchild Semiconductors high voltage

Low Gate Charge (Typ. 11 nC)

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Drain to Source Voltage

Gate to Source Voltage

- Continuous (TC = 25oC)

- Continuous (TC = 100oC)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

- Derate above 25oC

Operating and Storage Temperature Range

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

2008 Fairchild Semiconductor Corporation

FDD5N50 N-Channel UniFETTM II MOSFET

Drain to Source Breakdown Voltage

ID = 250A, VGS = 0V, TJ = 25oC

ID = 250A, Referenced to 25oC

Zero Gate Voltage Drain Current

VDS = 500V, VGS = 0V

VDS = 400V, TC = 125oC

Gate to Body Leakage Current

VGS = 30V, VDS = 0V

Gate Threshold Voltage

VGS = VDS, ID = 250A

Static Drain to Source On Resistance

VDS = 25V, VGS = 0V

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain Miller Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Drain-Source Diode Characteristics

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 4A

Reverse Recovery Time

Reverse Recovery Charge

VGS = 0V, ISD = 5A

2008 Fairchild Semiconductor Corporation

FDD5N50 N-Channel UniFETTM II MOSFET

Package Marking and Ordering Information TC = 25oC unless otherwise noted

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

IS, Reverse Drain Current [A]

Figure 5. Capacitance Characteristics

Ciss = Cgs + Cgd (Cds = shorted)

2. 250s Pulse Test

Figure 6. Gate Charge Characteristics

VGS, Gate-Source Voltage [V]

Figure 4. Body Diode Forward Voltage

2008 Fairchild Semiconductor Corporation

FDD5N50 N-Channel UniFETTM II MOSFET

Typical Performance Characteristics

Figure 7. Breakdown Voltage Variation