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Functional Description
If the active elements of the PIR sensor are exposed to a change in the surrounding
temperature field, electrical charges are separated within the sensor elements. The voltage
across the sensors controls a J-FET source follower impedance converter and thus
modulates the output current of the PIR detector.
The spectral sensitivity of the sensor is controlled by the optical transfer characteristics of
the window in the case and has been optimized to pick up radiation of the human body.
Applications
alarm systems
consumer electronics
human body detection
automatic switches
Operating Conditions
Operating Temperature
Storage Temperature
Operating Voltage
-20 C to +70 C
-30 C to +80 C
3 to 10 V
at Rs = 47 k
15% max
Symbol
Min
Idd
VSSA
- 3.6
Silicon
> 70%
average in 7 ... 14 m range
5.0 + 0.5 m
at 5% T abs.
= 25 C, unless otherwise noted.
Typ
7.4.99
3.6
Max
Unit
Note
0.2
0.5
mA
-4
- 4.4
referenced to VDD
2.0
mA
sink capability
4.4
IVSSA
VREF
at 1 Hz
determined by filter
1/2
Side View
Element
Window
9.2 0.2
4.0
8.3 0.2
1
Element
0.45 x3
13.5 1.0
3.3 0.2
4.5 0.2
3.0
Base View
PCD 5.08
45
1: Drain
2: Source
3: Ground
3
2
Circuit Configuration
Field of View
69o
69o
1 Drain
IR
+
+
-
-----x-axis
2 Source
3 Ground
62,5o
62,5o
-----y-axis
7.4.99
2/2