Mosfet RQW

Product Catalog
MOSFETs
Discrete Semiconductors
2007-Dec.
www.rohm.com
ROHM MOSFETs
In the society these days, MOSFET is getting rapidly popular as a

key-device in many applications, such as mobile phones and
automotive electronics.
ROHM will keep developing new devices exactly following the
market needs, paying attention to Downsizing, Energy-saving and
High-power as keywords.
NEW
Low Voltage 1.5V Drive MOSFETs
ECOMOSTMseries
Compact switches are increasingly moving towards low

voltage drive. This series responds to those needs.
VMT3
EMT3
EMT6
TUMT3
P.5
TSMT6
Complex MOSFETs for Mobile Device Power

These MOSFETs combine a low ON-resistance MOSFET
with a Schottky barrier diode in a single compact, thin
package, reducing the amount of space required.
TUMT5
TSMT5
P.6
TSMT6
NEW
MPT6 Package Dual MOSFETs
This high-power series features the same package power as
conventional SOP8 units, but in a package 40% smaller.
P.7
MPT6
MOSFETs for High Efficiency DC/DC Converters

This high performance series uses the latest in element /
packaging technology to provide high power supply
efficiency to DC/DC converters.
PSOP8S
PSOP8
P.8
Small Signal MOSFETs

This series is optimized for compact (1208 to 2916 size),
small current (up to 0.5A) applications.
VMT3
EMT3
UMT3
SMT3
P.11
Middle Power MOSFETs

This versatile series meets the demand for reduced mounting
space while maintaining a certain current level.
TUMT6
TSMT6
MPT3
P.12
Power MOSFETs
This series is ideal for large current applications (up to 15A)
requiring high voltage resistance (600V max.).
SOP8
NEW
CPT3
TO-220FM
High-speed Switching High Voltage Resistance MOSFETs

This high performance, high speed switching series reduces
switching loss by 30% compared to conventional products.
(500 to 600V)
LPTS
TO-220FM
NEW
TCPT Package MOSFETs
High-power series ;
The same mounting space as the one for conventional CPT3
package : yet more current is applicable.
TCPT
P.9
P.10
P.13,14
MOSFET Lineup
Low Voltage 1.5V Drive MOSFETs
Package
PD(W)
Polarity
VMT3
0.15
Nch
EMT3
0.15
Nch
EMT6
0.15
Nch+Nch
TUMT3
0.8
TUMT6
Nch
TSMT6
1.25
VDSS(V)
ID(A)
RUM003N02
20
0.3
RUE003N02
20
0.3
EM6K6
20
0.3
RUF015N02
20
RUF025N02
20
VGS=4.5V
2
0.7
0.8
1.5
1
1
220
170
130
2.5
80
49
39
72
39
28
66
38
31
Pch
RZF030P01
12
RUL035N02
20
3.5
Pch
RZL035P01
12
3.5
20
1.5
US6K4
RDS(on) Typ.(m
VGS=1.5V VGS=2.5V
1
1
0.8
1
1
0.8
0.7
2
0.7
Nch
Nch+Nch
TSMT3
Part No.
220
36
26
170
130
66
Nch
RUR040N02
20
55
33
25
Pch
RZR040P01
12
55
30
22
Nch
RUQ050N02
20
40
27
22
Pch
RZQ050P01
12
44
26
19
1 VGS=1.8V
Under Development
Page
P.5
2 VGS=4V

Package PD(W)
Polarity
Nch+SBD(1A)
Nch+SBD(0.5A)
TSMT5
1.25
Nch+SBD(0.7A)
Pch+SBD(1A)
Pch+SBD(0.5A)
TSMT6
1.25
Pch+SBD(0.5A)
TUMT6
RDS(on) Typ.(m
Qg(nC)
Page
VGS=1.5V VGS=1.8V VGS=2.5V VGS=4V VGS=4.5V VGS=10V VGS=4.5V
QS5U12
30
110
76
71
2.8
QS5U17
30
110
76
71
2.8
QS5U13
30
110
76
71
30
110
76
71
2.8
QS5U16
QS5U34
20
1.5
220
170
130
1.8
QS5U36
20
2.5
120
95
74
58
3.5
QS5U21
20
1.5
260
180
160
4.2
QS5U27
20
1.5
260
180
160
4.2
QS5U28
20
175
97
90
4.8
QS5U33
30
160
145
95
3.4
QS5U23
20
1.5
260
180
160
4.2
QS5U26
20
1.5
260
180
160
4.2
QS6U22
20
1.5
310
170
155
3.0
QS6U24
30
600
500
300
2.8
1.7
30
1.5
240
180
170
1.6
US5U1
30
1.5
240
180
170
1.6
US5U2
30
1.4
270
250
170
Pch+SBD(0.5A)
US5U30
20
570
310
280
2.1
Pch+SBD(0.7A)
US5U38
20
570
310
280
2.1
Pch+SBD(0.1A)
US5U35
45
0.7
1000
900
600
1.7
Nch+SBD(0.7A)
US6U37
30
1.5
240
180
170
1.6
VGS=5V
Nch+SBD(0.5A)
1
VDSS(V) ID(A)
US5U3
Nch+SBD(0.7A)
TUMT5
Part No.
1.4
P.6
MOSFET Lineup
Package
PD(W)
Polarity
Nch+Nch
MPT6
VDSS(V)
Part No.
2.0
55
50
36
4.0
33
30
24
7.6
MP6K65
30
3.5
105
95
73
2.0
PSOP8
2.8
Nch
Nch
2.6
Nch
Qg(nC)
VGS=5V
30
Under Development
PSOP8S
VGS=10V
30
MP6M62
Part No.
VGS=4.5V
MP6K62
MP6M63
PD(W) Polarity
VGS=4V
MP6K61
Nch+Pch
Package
RDS(on) Typ.(m
ID(A)
30
55
50
36
4.0
30
4.5
60
55
40
8.4
30
3.5
105
95
73
2.0
30
3.5
115
103
73
4.6
RDS(on) Typ.(m
VGS=2.5V VGS=4V VGS=4.5V VGS=10V
Qg(nC)
VGS=5V
Qgd
(nC)
9.0
12.6
3.7
5.5
4.1
30
6.4
4.2
4.0
3.0
40
7.5
13.2
12.2
9.0
12.6
3.7
5.8
5.5
4.1
30
6.4
4.2
4.0
3.0
40
7.5
2.6
VDSS(V)
ID(A)
RQA130N03
30
13
13.2
12.2
RQA180N03
30
18
5.8
RQA200N03
30
20
RQW130N03
30
13
RQW180N03
30
18
RQW200N03
30
20
RTW060N03
30
38
27
25
Page
P.7
Page
P.8

Package
TCPT
PD(W)
20
Polarity
Nch
Pch
Part No.
RDS(on) Typ.(m
VGS=4V
VGS=4.5V
VGS=10V
Qg(nC)
VGS=5V
20
28
25
20
12
45
30
15
13
10
24
45
16
50
45
35
17
VDSS(V)
ID(A)
RSY200N05
45
RSY300N05
RSY160P05
Page
P.9
Under Development
Package
TO-220FM
LPTS
PD(W)
Polarity
40
Nch
50
Nch
Part No.
RDS(on) Typ.(
Qg(nC)
VGS=10V
VDSS(V)
ID(A)
500
0.8
13
500
0.55
21
R5013ANX
500
13
0.29
35
R5016ANX
500
16
0.21
50
R6008ANX
600
0.6
21
0.8
13
R5007ANX
R5009ANX
VGS=10V
40
Nch
R5007ANJ
500
50
Nch
R5009ANJ
500
0.55
21
100
Nch
R5016ANJ
500
16
0.21
50
Page
P.10
ECOMOS Low Voltage 1.5V Drive MOSFETs

TM
Features
Energy saving
Summary
Applications
The development of a new low voltage drive process has

enabled operation at VGS = 1.5V
General load switch drives,

LED lamp drives,
Muting circuits,
DC/DC converters,
Switch for charger control,
and the like.
Stable low voltage drive

ON-resistance comparison
A new low-voltage drive process ensures

stable operation at VGS = 1.5V.
ON-resistance is also significantly reduced

compared to conventional 2.5V products,
resulting in 20 to 85% less power
consumption when ON.
ON-resistance:RDS(on) ()
10
Conventional Product
(2.5V drive)
9
8
7
6
5
4
3
1.5V drive
2
1
0
Drive voltage:VGS(V)
Circuit example
Load switch drive LED lamp driver Muting circuit
DC/DC Converters
Switch for charger control
Battery
Lineup
Package
Under Development
PD(W)
Polarity
VMT3
0.15
Nch
EMT3
0.15
Nch
EMT6
0.15
Nch+Nch
TUMT3
0.8
TUMT6
Nch
TSMT6
1.25
VDSS(V)
ID(A)
RUM003N02
20
0.3
RUE003N02
20
0.3
EM6K6
20
0.3
RUF015N02
20
RUF025N02
20
VGS=1.5V VGS=2.5V
1
1
0.8
1
1
0.8
VGS=4.5V
2
0.7
2
0.7
Internal
Circuitry
0.8
0.7
1.5
1
1
220
170
130
2.5
80
49
39
Pch
RZF030P01
12
72
39
28
Nch
RUL035N02
20
3.5
66
38
31
Pch
RZL035P01
12
3.5
66
36
26
1
220
US6K4
20
1.5
170
130
Nch
RUR040N02
20
55
33
23
Pch
RZR040P01
12
55
30
22
Nch
RUQ050N02
20
40
27
22
Pch
RZQ050P01
12
44
26
19
Nch+Nch
TSMT3
Part No.
RDS(on) Typ.(m
Note) Please see p.17 for the internal circuitry
1 VGS=1.8V
2 VGS=4V

QS5U, QS6U, US5U series
Features
Space saving
Summary
Applications
Delivers high power: 1.25W and 1.0W in mounting areas

of 2.9 2.8 mm (QS5U, QS6U) and 2.0 2.1 mm (US5U),
respectively.
A low ON-resistance MOSFET and a Schottky barrier diode
are integrated into a single package, reducing mounting area.
Mobile device
Power supplies
Excellent thermal conductivity

QS5U series
(TSMT5)
Reduces mounting space
US5U series
(TUMT5)
0.85
1.25W
1.0W
Power supply circuit
Combining a low ON-resistance MOSFET

with a Schottky barrier diode in one package
reduces the number of parts in the mobile
device power supply block, contributing to
end-product miniaturization.
0.77
2.0
2.8
2.9
2.1
The frame shape and materials were modified to

create a thin, compact package with excellent
thermal conductivity (package power). The
QS5U and QS6U series features a package
power of 1.25W, while the US5U series delivers
a power rating of 1.0W.
Vin
(Unit:mm)
Single package
design
PWM
IC
Vout
Lineup
Package PD(W)
Polarity
Part No.
Nch+SBD(1A)
Nch+SBD(0.5A)
TSMT5
1.25
Nch+SBD(0.7A)
Pch+SBD(1A)
Pch+SBD(0.5A)
TSMT6
1.25
Pch+SBD(0.5A)
TUMT6
Qg(nC) Internal
VGS=1.5V VGS=1.8V VGS=2.5V VGS=4V VGS=4.5V VGS=10V VGS=4.5V Circuitry
QS5U12
30
110
76
71
2.8
QS5U17
30
110
76
71
2.8
QS5U13
30
110
76
71
30
110
76
71
2.8
QS5U16
2.8
QS5U34
20
1.5
220
170
130
1.8
QS5U36
20
2.5
120
95
74
58
3.5
QS5U21
20
1.5
260
180
160
4.2
QS5U27
20
1.5
260
180
160
4.2
QS5U28
20
175
97
90
4.8
30
160
145
95
3.4
QS5U33
QS5U23
20
1.5
260
180
160
4.2
QS5U26
20
1.5
260
180
160
4.2
QS6U22
20
1.5
310
170
155
3.0
QS6U24
30
600
500
300
1.7
30
1.5
240
180
170
1.6
US5U1
30
1.5
240
180
170
1.6
US5U2
30
1.4
270
250
170
Pch+SBD(0.5A)
US5U30
20
570
310
280
2.1
Pch+SBD(0.7A)
US5U38
20
570
310
280
2.1
Pch+SBD(0.1A)
US5U35
45
0.7
1000
900
600
Nch+SBD(0.7A)
US6U37
30
1.5
240
180
170
Nch+SBD(0.5A)
1
RDS(on) Typ.(m
US5U3
Nch+SBD(0.7A)
TUMT5
VDSS(V) ID(A)
Note) Please see p.17 for the internal circuitry.
1.4
1.7
1.6
VGS=5V

MP6K, MP6M series
Features
Summary
Applications
High power
Space saving
High performance
The frame pattern was optimized to create a compact

package requiring 40% less mounting area while delivering
the same package power as the conventional SOP8.
Power management circuit,

Motor drive circuit,
Amusement equipment
Excellent package power
Space-saving, Thin,
Low ON-resistance
Provides the same package power as the SOP8
Delivers the same low ON-resistance as the
SOP8 (5060 size) in a package 40% smaller
(5060 size) in the 4540 size.
and 40% thinner.
1
0.8
SOP8
0.6
50
200
450
4.0
40%
smaller
800
Board size(mm )
2
Outline
3.9
3.2
40%
thinner
1.75
Front side
4.5
6.0
MPT6
SOP8
0.2
The new industry

standard MPT6
Back side
1.0
0.4
5.0
Package power: PD(W)
1.2
(Unit:mm)
Circuit example
DC/DC Converters
VCC
Motor drive circuit
VIN
PWM
Control
IC
VOUT
Half bridge
Full bridge
Lineup
Package
3-Phase motor control
Under Development
PD(W)
Polarity
Nch+Nch
MPT6
2.0
Nch+Pch
Part No.
MP6K61
MP6K62
MP6K65
MP6M63
MP6M62
VDSS(V)
ID(A)
30
30
30
30
30
30
30
5
6
3.5
5
4.5
3.5
3.5
Note) Please see p.17 for the internal circuitry
RDS(on) Typ.(m
VGS=4V VGS=4.5V VGS=10V
55
50
36
24
33
30
105
95
73
55
50
36
40
60
55
105
95
73
115
103
73
Qg(nC) Internal
VGS=5V Cuircuitry
4.0
7.6
2.0
4.0
8.4
2.0
4.6

RQA, RQW series
Features
Summary
Applications
High power
Energy saving
High performance
Excellent element and package characteristics make this

series ideal for optimizing the efficiency of DC/DC
converters.
DC/DC converter
Superior power supply efficiency

DC/DC converter power supply efficiency ratings
The element and package are optimized for

DC/DC converters.
90
switching elements are encapsulated in
85
Efficiency()
Specially designed low ON-resistance / fast

high-power PSOP8S and PSOP8 packages that
have the same mounting area as SOP8 package

but can handle 40% or greater package power.
RQA130N03
RQA200N03
Vin=19V
Vout=1.3V
80
Conventional
product
75
Also, power supply efficiency is dramatically
improved, which contributes to low-current drive
70
(energy-saving) of electric appliances.
10
Load current(A)
Conventional ratio
10% improvement
15
20
Circuit example
DC/DC converter circuit
The RQA series delivers maximum performance
when used with RQW series in pairs as high-side
VCC
and low-side switching devices in the large-current

DC/DC converter.
VIN
High side
MOSFET
PWM
Control
IC
VOUT
Low side
MOSFET
Lineup
Package
PSOP8S
PSOP8
PD(W) Polarity
2.8
Nch
Nch
2.6
Nch
Part No.
VDSS(V)
ID(A)
RQA130N03
RQA180N03
RQA200N03
RQW130N03
RQW180N03
RQW200N03
RTW060N03
30
30
30
30
30
30
30
13
18
20
13
18
20
6
RDS(on) Typ.(m
VGS=2.5V VGS=4V VGS=4.5V VGS=10V
13.2
12.2
9.0
5.8
5.5
4.1
4.2
4.0
3.0
13.2
12.2
9.0
5.8
5.5
4.1
4.2
4.0
3.0
38
27
25
Qg(nC)
VGS=5V
12.6
30
40
12.6
30
40
8
Qgd
(nC)
3.7
6.4
7.5
3.7
6.4
7.5
2.6

Features
Summary
Applications
The same mounting space as the one for

conventional CPT3 package : yet more current is
applicable.
Thin
High power
LCD backlight inverters

Motor drive circuit
High power, Thin

TCPT
CPT3
Improvement of heat-radiation efficiency
(Unit:mm)
has enable higher current intake with the
6.5
same mounting space as the one for
6.6
conventional CPT3 package.
9.5
9.5
Higher current
2.0
2.3
14%
Thinner
Circuit example
Controlling heat emission is a major challenge with large LCDs. The high power TCPT package helps
reduce heat dissipation in the backlight inverter circuit.
LCD backlight inverter circuit
Motor drive circuit
24VIN
Control
CCFL / EEFL
Half bridge
Full bridge
Lineup
Package
TCPT
3-Phase motor control
Under Development
PD(W)
20
Polarity
Nch
Pch
Part No.
VDSS(V)
RSY200N05
RSY300N05
RSY160P05
45
45
45
ID(A)
20
30
16
RDS(on) Typ.(m
28
25
20
15
13
10
50
45
35
Qg(nC)
VGS=5V
12
24
17

Features
Summary
Applications
High power
Energy saving
High performance
This high-performance series was developed using a new

high voltage resistance process that enables fast switching
and low ON-resistance.
Switching power supplies
High-speed switching (Low switching loss)

A new low ON-resistance process reduces
ON-resistance comparison
30
RDS(on) Qg(nC)
ON-resistance by 50% over conventional
units, significantly improving switching speed

(by 30%) while reducing switching loss. The
lineup is available in two different power
packages, TO-220FM and LPTS, featuring
Conventional product
RDX series
25
20
15
10
5
450
lower heat emission.
RDS(on)
50%
Reduction
New R50 to R60 series

500
550
VDSS(V)
600
650
Switching speed comparison

Conventional product
R50 to R60 series
300
250
200
ID
VDS
150
100
[V]
50
-50
-100
4
300
3.5 Speed 30% 250
3 improvement 200
2.5
150
2
100
1.5 [A]
[V]
50
1
0
0.5
-50
0
VDS
-100
-0.5
-1
-150 200nsec
ID
140nsec
-150
Circuit example
Switching power supply circuit (Primary)
Ideal for use in the PFC block, requiring low
ON-resistance, and in switching (SW) circuits in

the switching power supply, where switching
speed is of critical importance.
IC
IC
PFC
Lineup
Package
TO-220FM
LPTS
PD(W)
Polarity
40
Nch
50
Nch
40
50
100
Nch
Nch
Nch
Part No.
R5007ANX
R5009ANX
R5013ANX
R5016ANX
R6008ANX
R5007ANJ
R5009ANJ
R5016ANJ
10
VDSS(V)
ID(A)
500
500
500
500
600
500
500
500
7
9
13
16
8
7
9
16
SW
RDS(on) Typ.(
VGS=10V
0.8
0.55
0.29
0.21
0.6
0.8
0.55
0.21
Qg(nC)
VGS=10V
13
21
35
50
21
13
21
50
4
3.5
3
2.5
2
1.5 [A]
1
0.5
0
-0.5
-1
MOSFET Lineup
Small Signal MOSFETs
Package
PD(W)
Polarity
Nch
VMT3
0.15
Pch
Nch
EMT3
0.15
Pch
EMT5
EMT6
0.15
0.15
RDS(on) Typ.(
VGS=4V VGS=4.5V
VDSS(V)
ID(A)
30
0.1
RTM002P02
20
0.2
2.0
1.1
1.0
RSM002P03
30
0.2
1.6
1.4
0.9
2SK3541
VGS=2.5V
VGS=10V
2SK3019B
30
0.01
14
2SK3019
30
0.1
RTE002P02
20
0.2
2.0
1.1
1.0
RSE002P03
30
0.2
1.6
1.4
0.9
Nch+Nch
EM5K5
30
0.3
0.8
0.7
0.6
Nch+Nch
EM6K1
30
0.1
Nch+Pch
EM6M1
30
0.1
20
0.2
1.1
2SK3018
30
0.1
RJU003N03
30
0.3
1.4
0.9
0.8
RHU003N03
30
0.3
1.4
1.2
0.8
RJU002N06
60
0.2
2.2
1.7
1.6
RHU002N06
60
0.2
2.8
1.7
RTU002P02
20
0.25
2.0
1.1
1.0
RSU002P03
30
0.25
1.6
1.4
0.9
Nch
UMT3
Part No.
0.2
Pch
UMT5
0.15
Nch+Nch
UM5K1N
30
0.1
UMT6
0.15
Nch+Nch
UM6K1N
30
0.1
SST3
0.2
Nch
RK7002
60
0.115
RK7002A
60
0.3
2SK2731
30
RJK005N03
SMT3
SMT6
0.2
0.2
Nch
Nch+Nch
7.5 max.
7.5 max.
1.1
0.7
0.2
2.8
1.5
30
0.5
0.65
0.42
0.40
RHK005N03
30
0.5
0.6
0.51
0.35
RHK003N06
60
0.3
1.1
0.7
SM6K2
60
0.2
2.8
1.7
VGS=5V
11
MOSFET Lineup
Middle Power MOSFETs
Package
PD(W)
polarity
Nch
TUMT3
0.8
Pch
Nch
Nch+Nch
TUMT6
Pch
Pch+Pch
Nch+Pch
Nch
TSMT3
1
Pch
TSMT5
1.25
Nch+Nch
Nch
Nch+Nch
TSMT6
1.25
Pch
Pch+Pch
Nch+Pch
MPT3
1
2.0
Nch
Part No.
VDSS(V)
ID(A)
RTF015N03
RTF025N03
RSF014N03
RTF010P02
RTF015P02
RTF020P02
RSF010P03
RTL035N03
US6K1
US6K2
RTL020P02
RTL030P02
RSL020P03
US6J2
30
30
30
20
20
20
30
30
30
30
20
20
30
20
30
20
30
20
30
30
30
45
20
20
20
20
30
30
30
30
30
30
30
30
30
30
45
30
20
20
20
20
30
30
30
20
20
30
20
30
20
60
30
60
1.5
2.5
1.4
1
1.5
2
1
3.5
1.5
1.4
2
3
2
1
1.5
1
1.4
1
2.5
4
2.5
2
1.1
2
2.5
3
1.5
2
2.5
2
2
3.5
4.5
2
3.5
4.5
4
1
2.5
3
3.5
4
2.5
3
3.5
1.5
1.5
1.5
1.5
1.5
1.5
2
3
2
US6M2
US6M1
RTR025N03
RTR040N03
RSR025N03
RTR020N05
RTR011P02
RTR020P02
RTR025P02
RTR030P02
RSR015P03
RSR020P03
RSR025P03
QS5K2
RTQ020N03
RTQ035N03
RTQ045N03
RSQ020N03
RSQ035N03
RSQ045N03
RVQ040N05
QS6K1
RTQ025P02
RTQ030P02
RTQ035P02
RTQ040P02
RSQ025P03
RSQ030P03
RSQ035P03
QS6J1
QS6J3
QS6M3
QS6M4
RJP020N06
RHP030N03
RHP020N06
1:When mounted on a ceramic board.
12
VGS=2.5V
240
70
570
180
120
56
240
180
90
570
240
570
570
95
47
180
570
180
115
90
110
138
55
42
260
140
110
80
60
310
310
260
310
260
310
210
RDS(on) Typ.(m
VGS=4V VGS=4.5V
180
170
50
48
270
250
310
280
110
100
65
60
450
400
42
40
180
170
270
250
110
100
55
50
140
125
310
280
180
170
310
280
270
250
310
280
70
66
36
34
83
74
135
130
310
280
110
100
75
70
60
55
320
270
150
135
115
100
76
71
94
89
40
38
32
30
168
148
67
60
40
36
53
47
180
170
80
72
65
60
55
50
40
35
145
120
100
90
70
65
170
155
170
155
180
170
170
155
180
170
170
155
170
165
160
240
200
VGS=10V
170
250
170
80
170
50
170
85
70
96
44
27
38
80
60
45
90
150
Qg(nC)
VGS=4.5V
1.6
3.7
1.4
2.1
5.2
7
1.9
4.6
1.6
1.4
4.9
8.0
3.9
2.1
1.6
2.1
1.4
2.1
3.3
5.9
2.9
2.9
2.0
4.9
7
9.3
2.6
4.3
5.4
2.8
2.4
4.6
7.6
2.2
5.3
6.8
6.3
1.7
6.4
9.0
10.5
12.2
4.4
6.0
9.2
3.0
3.0
1.6
3.0
1.6
3.0
VGS=5V
MOSFET Lineup
Power MOSFETsSOP8
Package
PD(W)
Polarity
Nch
SOP8
2.0
Nch+Nch
Nch+Nch+SBD
Pch
Pch+Pch
Part No.
RDS(on) Typ.(m
VDSS(V)
ID(A)
RSS065N03
30
6.5
30
27
19
RSS090N03
30
17
15
11
Qg(nC)
VGS=5V
6.1
11
RSS100N03
30
10
13.5
12.5
9.5
14
RSS110N03
30
11
11.2
10.3
7.6
17
RSS125N03
30
12.5
9.3
8.6
6.5
20
RSS130N03
30
13
5.9
25
RRS070N03
30
28
26
20
RRS090N03
30
18
17
14
12
RRS100N03
30
10
15
14
11
16
11.5
11
7.9
7.4
7.7
RRS110N03
30
11
RRS125N03
30
12.5
RRS130N03
30
13
RSS070N05
45
25
23
RSS080N05
45
20
18
15
13
RSS085N05
45
8.5
18
16
13
15.3
RSS095N05
45
9.5
15
14
11
18.9
RSS065N06
60
6.5
31
28
24
11
SP8K5
30
3.5
107
93
59
2.5
SP8K1
30
58
52
36
3.9
SP8K2
30
33
30
21
7.2
SP8K3
30
25
23
17
SP8K4
30
17
16
12
SP8K63
30
27
25
20
SP8K64
30
18
17
14
SP8K22
45
4.5
46
41
33
6.8
SP8K23
45
36
33
26
8.6
SP8K24
45
26
24
18
15.4
SP8K31
60
3.5
105
100
85
3.7
SP8K32
60
4.5
55
52
46
SP8K33
60
40
38
34
30
25
23
17
8.4
8.5
SP8K10S
30
9.8
9.2
8.5
22
7.5
27
30
18
12
8.4
15
8.5
15
19
17.8
14
8.9
78
68
42
30
55
47
30
13
30
7.5
25
22
15
30
RSS090P03
30
17
15
10
39
RSS060P05
45
38
35
26
23
RSS070P05
45
28
25
19
34
SP8J4
30
320
270
170
2.4
SP8J3
30
3.5
120
100
65
5.5
SP8J2
30
4.5
65
57
40
SP8J1
30
45
40
30
16
SP8J5
30
30
25
20
25
RSS040P03
30
RSS050P03
RSS075P03
13
8.5
MOSFET Lineup
Power MOSFETsSOP8
Package
PD(W)
Part No.
Polarity
VDSS(V)
SP8M2
SP8M3
SP8M4
SP8M5
SOP8
2.0
Nch+Pch
SP8M6
SP8M8
SP8M10
SP8M21
VGS=4V
VGS=4.5V
VGS=10V
Qg(nC)
VGS=5V
30
3.5
107
93
59
2.5
30
3.5
120
100
65
5.5
30
58
52
36
3.9
30
4.5
65
57
40
8.5
30
17
16
12
15
30
30
25
20
25
30
33
30
21
30
30
25
20
30
58
52
36
3.9
30
3.5
120
100
65
5.5
30
33
30
21
7.2
30
4.5
65
57
40
8.5
30
25
23
17
8.4
30
4.5
65
57
40
8.5
45
26
24
18
15.4
45
47
43
33
20
7.2
25
45
4.5
46
41
33
45
3.5
66
60
45
80
3.4
120
110
90
6.6
80
2.6
230
220
165
8.2
250
1.25
250
2.5
2.2
5.2
8
SP8M24
SP8M41
SP8M70
ID(A)
6.8
13
VGS=10V
Power MOSFETsCPT3, TO-220FN, TO-220FM
Package
Polarity
Part No.
10
Nch
2SK2094
60
0.4
0.3
Nch
2SK2503
60
0.17
0.11
Nch
RK3055E
60
Nch
2SK2504
100
0.25
0.18
Nch
RSD200N10
100
20
0.045
0.041
Nch
RDD050N20
200
0.55
30
Nch
RDN050N20
200
0.55
35
Nch
RDN100N20
200
10
0.27
40
Nch
RDN150N20
200
15
0.12
35
Nch
RDN080N25
250
0.38
40
Nch
RDN120N25
250
12
0.16
35
Nch
RDX050N50
500
1.1
40
Nch
RDX080N50
500
0.65
45
Nch
RDX120N50
500
12
0.38
30
Nch
RDX030N60
600
2.7
35
Nch
RDX045N60
600
4.5
1.6
40
Nch
RDX060N60
600
0.9
45
Nch
RDX100N60
600
10
0.48
CPT3
20
TO-220FN
TO-220FM
14
VDSS(V)
ID(A)
RDS(on) Typ.(
VGS=4V
VGS=10V
PD(W)
0.15 Max.
Dimensions
1.2
0.8
0.13
(1)(2)
0.2
0.5
1.6
(3)
0.2
(6) (5) (4)
0.15
UMT3
2.0
2.0
SC-88A
SOT-353
0.9
0.7
0.2
0.3
1.3
0.7
0.3
0.77
TUMT5
2.0
0.65 0.65
(4)
(2)
(3)
0.15
Each lead has same dimensions
TUMT6
2.0
0.85Max.
1.3
0.65 0.65
(6)
(5)
(4)
(1)
0.3
(2)
(3)
2.1
0.2
0.17
0.17
1.3
1.1
1.9
SC-74
SOT-457
0.8
0.4
2.9
SMT6
1.1
0.95
(4)
(5 )
(6 )
(3 )
(2 )
(1 )
0.8
0.3Min.
(1)
0.15
1.9

1.0Max.
2.9
0.85
TSMT5
0.7
0.4
(4)
0.85
0.7
(6)
(5)
1.6
2.8
(2)
(1)
0.95 0.95
(2)
(1)
(3)
0.4
0.16
2.9
0.4
0.95
0.45
0.2Min.
SOT-23
4.5
1.6
SC-62
SOT-89
1.3
2.4
0.15
0.5
0.4
(1) Gate
1.5
(2) Drain
PSOP8S
5.0
1.75
0.4
(8)
(7)
(6)
(5)
3.0
1.5
PSOP8
(8)
(7) (6)
(5)
5.0
(5 )
5.0
6.0
(8 )
(3) Source
0.28 Typ.
(3) Drain
0.4
0.4
0.5
(2) Gate
MPT6
(3)
(2)
(1)
(1)
1.9
(1) Source
0.16
1.5
1.0
(2)
0.95 0.95
(3)
2.5
4.0
(3)
(2)
0.4
MPT3
SST3
0.7
(4)
0.3
(3) Drain
(5)
0.85
6.0
(2) Source
0.16
1.9
0.3~0.6
(1)
(1) Gate
1.0Max.
2.9
1.9
0.95 0.95
1.6
2.8
(3)
TSMT6
1.0Max.
2.9
1.9
0.95 0.95
1.6
2.8
TSMT3
0.5
(3) Drain
0.15
0.3
0.3~0.6
0.95 0.95
(2) Gate
0.5
(2)
(1) Source
1.6
2.8
1.6
2.8
(3)
0.95
0.2
(4)
0.4
1.27
5.0
0.22
1.1
Notes: 1) Characters in ( ) under package designation denotes JEITA No. Characters in < > under package designation denotes JEDEC No.
15
(1) (2)
1.27
(3) (4)
0.4
0.5
(3)
0.28 Typ.
1.27
(4 )
0.4Min.
(1) (2)
(1 )
0.5
3.9
6.0
3.91 Typ.
0.22
0.9
3.5 Typ.
2.9
0.83 Typ.
SC-59
SOT-346
0.28 Typ.
SMT3
0.3Min.
(3) Drain
0.3~0.6
(2) Source
SOP8
0.77
1.7
2.1
2.1
(1)
0.3
0.17
0.2
(1) (2)
0.65 0.65
0.77
(3 )
(2 )
1.7
1.7
(5)
0.7
(4 )
0.2
0.85Max.
1.3
0.2Max.
0.85Max.
0.2
2.0
0.15
0.2
0.15
(1 )
0.2
0.9
0.65
(5 )
1.25
2.1
1.25
0.1Min.
(3) Drain
(3)
Surface Mount Type
0.65
(1) (2) (3)
(1)
1.3
(1) Gate
2.0
(6)
2.1
1.25
(2)
0.65 0.65
0.13
1.3
(5) (4)
(1) Source
TUMT3
UMT6
SC-88
SOT-363
0.9
0.65 0.65
(3)
(2) Gate
0.22
UMT5
SC-70
SOT-323
(1) (2) (3)
0.13
0.22
1.0
(3) Drain
1.2
1.6
(1) (2) (3)
0.1Min.
(1)
0.5 0.5
(2) Gate
0.5
1.2
1.6
(2)
0.2
1.6
1.0
0.5 0.5
(5) (4)
0.8
1.6
(1) Source
EMT6
0.5
1.0
0.5 0.5
0.55
0.3
0.1Min.
EMT5
0.7
1.6
SC-75A
SOT-416
0.1Min.
EMT3
0.2Max.
0.8
(3) Drain
0.2
0.4 0.4
(2) Source
0.2Max.
(1) Gate
0.2
(3)
0.22
(Unit: mm)
0.2
1.2
0.32
2.1
VMT3
5.0
2) For details of dimensions, please refer to the technical specifications.
Dimensions
TCPT
2.3
6.5
5.1
0.5
1.0
10.0
1
Gate
2
Drain
3
Source
1.0
2.3
0.72
2.3
0.5
2.54
1
Gate
2
Drain
3
Source
5.08
TO-220FM
4.5
2.8
2.5
1.2
1.3
14.0
1.3
2.7
3.2
10.0
15.0
2.8
0.4
0.78
0.8
2.54
(1) (2) (3)
2.54
0.75
1
Gate
2
Drain
3
Source
2.6
Under Development
16
0.8
2.54
(1) (2) (3)
2.54
0.75
2.6
1.2
(3)
8.0
1.2
9.0
13.1
3.0
0.8
4.5
3.2
(1)
14.0
5.0
15.0
12.0
TO-220FN
1Gate
2Drain
3Source
1.24
8.0
2.3
(3) Source
Leaded Type
9.5
9.5
2.5
1.5
(3)
0.8Min.
(2)
8.3
1.5
(2) Drain
0.65
0.9
(1)
1.3
(2)
5.5
(1) Gate
4.5
0.5
0.75
2.3
10.1
LPTS
2.0
5.0
12.0
CPT3
SC-63
SOT-428
0.9
Surface Mount Type
(Unit : mm)
6.6
Internal Circuitry
MOSFET + SBD
Nch+SBD(A)
(5)
1
(1)
(2)
Nch+SBD(B)
(4)
(3)
(5)
(6)
(1)Anode
(1)Gate
(2)Source
(2)Source
(3)Gate
(3)Anode
(4)Drain
(4)Cathode
(5)Cathode
(1)
(2)
(3)
(5)Drain
Pch+SBD(B)
Pch+SBD(A)
(5)
Nch+SBD(C)
(4)
(5)
(4)
(3)Gate
(3)
(4)Drain
(5)Cathode
(1)Gate
(2)Source
(3)Cathode
(4)Anode
(1)
(2)
(3)
(5)Anode
(6)Drain
(6)
(5)
(4)
(1)Anode
(2)Source
(2)
(4)
Pch+SBD(C)
(4)
(1)Anode
(1)
(5)
(1)
(2)
(3)
(5)
(4)
(1)Gate
(2)Source
(2)Source
(3)Gate
(3)Anode
(4)Drain
(4)Cathode
(5)Drain
(1)
(2)
(3)
(5)N/C
(6)Cathode
MOSFET Dual
Nch+Nch
(6)
(1)
(5)
(2)
Nch+Pch
(4)
(3)
(6)
(1)TR1: Source
(1)TR1: Source
(2)TR1: Gate
(2)TR1: Gate
(3)TR2: Drain
(3)TR2: Drain
(4)TR2: Source
(4)TR2: Source
(5)TR2: Gate
(6)TR1: Drain
(1)
(2)
(3)
(5)TR2: Gate
(6)TR1: Drain
1:Static protection diode.

2:Internal diode.
17
18
-MOSFETs
1st. December 2007.
Catalog No.50P5842E 12.2007 ROHM TSU

Mosfet RQW

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In the society these days, MOSFET is getting rapidly popular as a

Low Voltage 1.5V Drive MOSFETs

Compact switches are increasingly moving towards low

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MOSFETs for High Efficiency DC/DC Converters

Small Signal MOSFETs

Middle Power MOSFETs

High-speed Switching High Voltage Resistance MOSFETs

Complex MOSFETs for Mobile Device Power

MOSFETs for High Efficiency DC/DC Converters

TCPT Package MOSFETs

ECOMOS Low Voltage 1.5V Drive MOSFETs

The development of a new low voltage drive process has

General load switch drives,

Stable low voltage drive

A new low-voltage drive process ensures

ON-resistance is also significantly reduced

Switch for charger control

Note) Please see p.17 for the internal circuitry

Complex MOSFETs for Mobile Device Power

Delivers high power: 1.25W and 1.0W in mounting areas

Excellent thermal conductivity

Reduces mounting space

Power supply circuit

Combining a low ON-resistance MOSFET

The frame shape and materials were modified to

Note) Please see p.17 for the internal circuitry.

MPT6 Package Dual MOSFETs

The frame pattern was optimized to create a compact

Power management circuit,

Excellent package power

Provides the same package power as the SOP8

Delivers the same low ON-resistance as the

SOP8 (5060 size) in a package 40% smaller

(5060 size) in the 4540 size.

and 40% thinner.

The new industry

Package power: PD(W)

Motor drive circuit

3-Phase motor control

Note) Please see p.17 for the internal circuitry

MOSFETs for High Efficiency DC/DC Converters

Excellent element and package characteristics make this

Superior power supply efficiency

The element and package are optimized for

switching elements are encapsulated in

Specially designed low ON-resistance / fast

have the same mounting area as SOP8 package

Also, power supply efficiency is dramatically

improved, which contributes to low-current drive

(energy-saving) of electric appliances.

The RQA series delivers maximum performance

when used with RQW series in pairs as high-side

and low-side switching devices in the large-current

TCPT Package MOSFETs

The same mounting space as the one for

LCD backlight inverters

High power, Thin

Improvement of heat-radiation efficiency

has enable higher current intake with the

same mounting space as the one for

conventional CPT3 package.

Motor drive circuit