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Subhananda Chakrabarti
Diode Operation
A diode is formed by joining two equally doped P-type and N-type
semiconductors
Doping is a process of introducing impurity atoms to an intrinsic
semiconductor(pure or undoped), changing it to an extrinsic
semiconductor
P-type semiconductor is formed by adding trivalent impurities such as
boron, aluminium or gallium to an intrinsic semiconductor, creating
deficiencies of valence electrons, also called holes
N-type semiconductor is formed by addition of pentavalent impurities
such as antimony, arsenic or phosphorous which contribute free electrons,
increasing the conductivity of the intrinsic semiconductor
Depletion Region
P-type semiconductor has excess holes and N-type
semiconductor has excess electrons
At the point of contact of P and N-type regions, holes in Ptype attract electrons present in N-type material resulting in
diffusion of electrons across the junction and combining
with holes making negative ions
Filling a hole makes a negative ion and leaves behind a
positive ion in the N-side
Due to these positive and negative ions, a space charge
builds up creating a depletion region which prevents any
further electron transfer unless done by putting a forward
bias on the junction
Forward bias: If voltage is applied in forward direction as indicated below, Pside is made more positive and N side is made more negative, assisting
electrons in overcoming the coulomb barrier and electrons start flowing from
right to left which means holes moving from left to right i.e. flow of current
with small resistance in forward direction
Diode Characteristics
Forward bias region:
V>0, Diode current equation in forward bias is given as:
Diode characteristics:
Reverse bias region:
P- terminal is connected to negative terminal of battery
and N- terminal to positive terminal of battery
V<0, I=-Is( reverse saturation current)
Ideally the reverse current is independent of reverse bias
Practically, it is larger that Is and slightly increases with
reverse bias
It is temperature dependent: doubles for every 10 degree
rise in temperature
Breakdown region:
If reverse voltage keeps on increasing, then when V< Vbr,
the diode enters in breakdown region
In breakdown region, the reverse current increases rapidly
with increase in reverse bias
Zener diode
Zener diode characteristics is same as
normal diode in forward bias and reverse
bias region
In breakdown region, beyond the
breakdown voltage, it is modeled as a
voltage source in series with an
incremental resistance
In fig., the breakdown voltage is -17 volts
It is used as voltage regulator to give
constant output voltage in spite of
variation in supply voltage or current
CLIPPER
a device designed to prevent the output of a circuit from exceeding a
predetermined voltage level
Consist of linear element linear element like resistor and non-linear
element like diode
CLAMPER
Adds required DC offset to the input waveform
Contain energy storage element like capacitor
During one cycle(positive or negative) of input, capacitor charges
During another cycle, capacitor discharges which shifts the dc level of input
Bridge Rectifier
Practice Problems:
Problem 1: Sketch i versus v to scale for each of the circuits shown below. Assume that the
diodes are ideal and allow v to range from -10 V to +10 V.
i
(a)
(b)
+
2k
v
1k
2k
5V
(d)
+
v
_
+
_
v
_
(c)
1k
D
C
v
_
1k
(a)
+
v
_
2k
Resulting characteristics
(b)
i
+
v
_
1k
+
_
5V
First combine diode and resistance then add the voltage source
(c)
i
+
2k
v
1k
(d)
i
+
D
C
v
_
1k
Problem 2 : Assuming ideal diodes sketch to scale the transfer characteristics (vo versus
vin) for the circuit shown below.
1k
vin +_
+
1k
vo
3V
_
1k
vin
+
_
+
1k
vo
3V
_
+
vin
+
_
1k
vo
_
1k
vin +_
+
1k
vo
3V
_
3V
vo
1
1
-3V
-3V
1
2
vin
Input Waveform
VB1
-VB2
Output Waveform
During positive cycle,
When V1<VB1, D1 become open circuit and Vo=V1
When V1>VB1, D1 become short circuit and Vo=VB1
During negative cycle,
When V1>VB2, D2 become open circuit and Vo=V1
When V1<VB2, D2 become short circuit and Vo=VB2
Vm
Input Waveform
Vm
Vb
Output Waveform
END