PD - 97006

IRF6645
DirectFET Power MOSFET
l
l
l
l
l
l
l
l
l

Typical values (unless otherwise specified)

RoHs Compliant Containing No Lead and Bromide

Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques

VDSS

VGS

100V max 20V max

Qg

tot

14nC

RDS(on)
28m@ 10V

Qgd

Vgs(th)

4.8nC

4.0V

DirectFET ISOMETRIC

SJ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH

SJ

SP

MZ

MN

Description
The IRF6645 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.

Absolute Maximum Ratings

Max.

Units

VDS

Drain-to-Source Voltage

100

VGS

Gate-to-Source Voltage

20

Parameter

e
e
@ 10V f

ID @ TA = 25C

Continuous Drain Current, VGS @ 10V

5.7

ID @ TA = 70C

Continuous Drain Current, VGS @ 10V

4.5

ID @ TC = 25C

Continuous Drain Current, VGS

25

IDM

Pulsed Drain Current

EAS

Single Pulse Avalanche Energy

IAR

Avalanche Current

g

VGS, Gate-to-Source Voltage (V)

Typical R DS (on) (m)

ID = 3.4A

70
60

TJ = 125C

50
40

TJ = 25C

30
20
4

6
8
10
12
14
VGS, Gate-to-Source Voltage (V)

16

Fig 1. Typical On-Resistance vs. Gate Voltage

Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.

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45

80

29

mJ

3.4

12
ID= 3.4A

10

VDS = 80V
VDS= 50V

8
6
4
2
0
0

12

16

QG Total Gate Charge (nC)

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

TC measured with thermocouple mounted to top (Drain) of part.

Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25C, L = 5.0mH, RG = 25, IAS = 3.4A.

1
8/5/05

IRF6645
Electrical Characteristic @ TJ = 25C (unless otherwise specified)
Min.

Typ.

Max.

Units

BVDSS

Drain-to-Source Breakdown Voltage

Parameter

100

VDSS/TJ

Breakdown Voltage Temp. Coefficient

0.12

V/C

RDS(on)

Static Drain-to-Source On-Resistance

28

35

Conditions
VGS = 0V, ID = 250A
Reference to 25C, ID = 1mA
VGS = 10V, ID = 5.7A c
VDS = VGS, ID = 50A

VGS(th)

Gate Threshold Voltage

3.0

4.9

VGS(th)/TJ

Gate Threshold Voltage Coefficient

-12

mV/C

IDSS

Drain-to-Source Leakage Current

20

VDS = 100V, VGS = 0V

250

VDS = 80V, VGS = 0V, TJ = 125C

nA

VGS = 20V

IGSS

Gate-to-Source Forward Leakage

100

Gate-to-Source Reverse Leakage

-100

gfs

Forward Transconductance

7.4

Qg

VGS = -20V
S

VDS = 10V, ID = 3.4A

Total Gate Charge

14

20

Qgs1

Pre-Vth Gate-to-Source Charge

3.1

Qgs2

Post-Vth Gate-to-Source Charge

0.8

Qgd

Gate-to-Drain Charge

4.8

7.2

ID = 3.4A

Qgodr

See Fig. 15

VDS = 50V
nC

VGS = 10V

Gate Charge Overdrive

5.3

Qsw

Switch Charge (Qgs2 + Qgd)

5.6

Qoss

Output Charge

7.2

nC

RG

Gate Resistance

1.0

td(on)

Turn-On Delay Time

9.2

VDD = 50V, VGS = 10Vc

tr

Rise Time

5.0

ID = 3.4A

td(off)

Turn-Off Delay Time

18

tf

Fall Time

5.1

Ciss

Input Capacitance

890

Coss

Output Capacitance

180

Crss

Reverse Transfer Capacitance

40

= 1.0MHz

Coss

Output Capacitance

870

VGS = 0V, VDS = 1.0V, f=1.0MHz

Coss

Output Capacitance

100

VGS = 0V, VDS = 80V, f=1.0MHz

Min.

Typ.

Max.

25

ns

VDS = 16V, VGS = 0V

RG=6.2
VGS = 0V

pF

VDS = 25V

Diode Characteristics
Parameter
IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Units

MOSFET symbol
A

Conditions
showing the
integral reverse

45

G
S

p-n junction diode.

(Body Diode)d
VSD

Diode Forward Voltage

1.3

TJ = 25C, IS = 3.4A, VGS = 0V c

trr

Reverse Recovery Time

31

47

ns

TJ = 25C, IF = 3.4A, VDD = 50V

Qrr

Reverse Recovery Charge

40

60

nC

di/dt = 100A/s c

Notes:

Pulse width 400s; duty cycle 2%.

Repetitive rating; pulse width limited by max. junction temperature.

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IRF6645
Absolute Maximum Ratings
Units

Power Dissipation

3.0

Power Dissipation

1.4

PD @TC = 25C

c
c
Power Dissipation f

Max.

TP

Peak Soldering Temperature

270

TJ

Operating Junction and

TSTG

Storage Temperature Range

PD @TA = 25C
PD @TA = 70C

Parameter

42
C

-40 to + 150

Thermal Resistance
Parameter

cg
Junction-to-Ambient dg
Junction-to-Ambient eg
Junction-to-Case fg

RJA

Typ.

Max.

58

Junction-to-Ambient

RJA
RJA
RJC
RJ-PCB

12.5

20

Junction-to-PCB Mounted

3.0

1.0

Units

C/W

100

Thermal Response ( Z thJA )

D = 0.50
0.20

10

0.10
0.05
R1
R1

0.02

0.01

J
1

R2
R2
2

R3
R3

R4
R4

AC

Ci= i/Ri
Ci= i/Ri

0.1

Ri (C/W)

R5
R5

i (sec)

0.6677

0.000066

1.0463

0.000896

1.5612

0.004386

29.2822

0.686180

25.4550 32
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthja + Ta

SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006

1E-005

0.0001

0.001

0.01

0.1

10

100

t1 , Rectangular Pulse Duration (sec)

Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Notes:

Surface mounted on 1 in. square Cu, steady state.

Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized

TC measured with thermocouple incontact with top (Drain) of part.

R is measured at TJ of approximately 90C.

back and with small clip heatsink.

Surface mounted on 1 in. square Cu

board (still air).

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Mounted to a PCB with

small clip heatsink (still air)

Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)

IRF6645
100

100

BOTTOM

10

6.0V

TOP

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

TOP

VGS
15V
10V
8.0V
7.0V
6.0V

BOTTOM

10
6.0V

60s PULSE WIDTH

60s PULSE WIDTH

Tj = 150C

Tj = 25C
0.1

1
0.1

10

100

0.1

VDS , Drain-to-Source Voltage (V)

10

100

VDS , Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

Fig 5. Typical Output Characteristics

100

2.0
ID = 5.7A

VDS = 10V

60s PULSE WIDTH

10

Typical RDS(on) (Normalized)

ID, Drain-to-Source Current ()

VGS
15V
10V
8.0V
7.0V
6.0V

TJ = 150C
TJ = 25C
TJ = -40C

VGS = 10V

1.5

1.0

0.1
4.0

5.0

6.0

7.0

0.5

8.0

-60 -40 -20 0

VGS, Gate-to-Source Voltage (V)

Fig 6. Typical Transfer Characteristics

10000

60

VGS = 8.0V

(m)
DS(on)

Coss

Typical R

C, Capacitance(pF)

Ciss

100

TA= 25C

VGS = 7.0V

Coss = Cds + Cgd

Crss

50

VGS = 10V
VGS = 15V

40

30

20

10
1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

TJ , Junction Temperature (C)

Fig 7. Normalized On-Resistance vs. Temperature

VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd

1000

20 40 60 80 100 120 140 160

10

20

30

40

50

ID, Drain Current (A)

Fig 9. Typical On-Resistance vs. Drain Current

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IRF6645
1000

TJ = 150C
TJ = 25C

ID, Drain-to-Source Current (A)

ISD , Reverse Drain Current (A)

100.0

TJ = -40C

10.0

1.0

OPERATION IN THIS AREA

LIMITED BY R DS (on)
100

100sec
10

1msec
1

TA = 25C
Tj = 150C
Single Pulse

VGS = 0V
0.1

0.1
0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.1

1.1

1.0

10.0

100.0

1000.0

VDS , Drain-toSource Voltage (V)

VSD , Source-to-Drain Voltage (V)

Fig11. Maximum Safe Operating Area

Fig 10. Typical Source-Drain Diode Forward Voltage

6.0

VGS(th) Gate threshold Voltage (V)

6.0

5.0

ID , Drain Current (A)

10msec

4.0

3.0

2.0

1.0

5.5
5.0
4.5
4.0
3.5

ID = 1.0A
ID = 1.0mA

3.0

ID = 50A

ID = 250A

2.5
2.0

0.0
25

50

75

100

125

-75

150

-50

-25

25

50

75

100

125

150

TJ , Temperature ( C )

TJ , Ambient Temperature (C)

Fig 13. Typical Threshold Voltage vs.

Junction Temperature

Fig 12. Maximum Drain Current vs. Ambient Temperature

EAS, Single Pulse Avalanche Energy (mJ)

120

ID
1.5A
2.4A
BOTTOM 3.4A
TOP

100

80

60

40

20

0
25

50

75

100

125

150

Starting TJ, Junction Temperature (C)

Fig 14. Maximum Avalanche Energy vs. Drain Current

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IRF6645
Current Regulator
Same Type as D.U.T.

Id
Vds

50K

Vgs

.2F

12V

.3F

D.U.T.

+
V
- DS
Vgs(th)

VGS
3mA

IG

ID

Qgs1 Qgs2

Current Sampling Resistors

Fig 15a. Gate Charge Test Circuit

Qgd

Qgodr

Fig 15b. Gate Charge Waveform

V(BR)DSS
15V

D.U.T

RG
VGS
20V

DRIVER

VDS

tp

+
V
- DD

IAS

I AS

0.01

tp

Fig 16c. Unclamped Inductive Waveforms

Fig 16b. Unclamped Inductive Test Circuit

VDS

RD

VDS

90%
VGS

D.U.T.

RG

- VDD

10V
Pulse Width 1 s

10%

VGS
td(on)

tr

td(off)

tf

Duty Factor 0.1 %

Fig 17a. Switching Time Test Circuit

Fig 17b. Switching Time Waveforms

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IRF6645
D.U.T

Driver Gate Drive

D.U.T. ISD Waveform

Reverse
Recovery
Current

RG

di/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

VDD

P.W.
Period
VGS=10V

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

D=

Period

P.W.

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor
Current
Inductor Curent

Ripple 5%

ISD

* VGS = 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET Power MOSFETs

DirectFET Substrate and PCB Layout, SJ Outline

(Small Size Can, J-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.

D
G
D

S
S

G = GATE
D = DRAIN
S = SOURCE

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IRF6645
DirectFET Outline Dimension, SJ Outline
(Small Size Can, J-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.

DIMENSIONS
METRIC
MAX
CODE MIN
4.85
A
4.75
3.95
B
3.70
2.85
C
2.75
0.45
D
0.35
0.62
E
0.58
0.62
F
0.58
0.72
G
0.68
0.72
H
0.68
K
0.98 1.02
2.32
L
2.28
0.58
M
0.48
0.08
N
0.03
0.17
P
0.08

IMPERIAL
MIN
0.187
0.146
0.108
0.014
0.023
0.023
0.027
0.027
0.039
0.090
0.019
0.001
0.003

MAX
0.191
0.156
0.112
0.018
0.024
0.024
0.028
0.028
0.040
0.091
0.023
0.003
0.007

DirectFET Part Marking

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IRF6645
DirectFET Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as IRF6645). For 1000 parts on 7" reel,
order IRF6645TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
IMPERIAL
IMPERIAL
METRIC
METRIC
MAX
MIN
MIN
CODE
MIN
MIN
MAX
MAX
MAX
N.C
6.9
12.992
A
330.0
177.77 N.C
N.C
N.C
0.75
B
0.795
N.C
20.2
19.06
N.C
N.C
N.C
0.53
C
0.504
0.50
12.8
13.5
0.520
12.8
13.2
0.059
D
0.059
1.5
1.5
N.C
N.C
N.C
N.C
2.31
E
3.937
100.0
58.72
N.C
N.C
N.C
N.C
F
N.C
N.C
0.53
N.C
N.C
0.724
13.50
18.4
G
0.47
0.488
12.4
11.9
N.C
0.567
12.01
14.4
H
0.47
0.469
11.9
11.9
N.C
0.606
12.01
15.4

NOTE: CONTROLLING
DIMENSIONS IN MM

DIMENSIONS
METRIC
MIN
MAX
7.90
8.10
3.90
4.10
11.90
12.30
5.45
5.55
4.00
4.20
5.00
5.20
1.50
N.C
1.50
1.60

IMPERIAL
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
0.063

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/05

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