Philips Semiconductors

Product specification

N-channel enhancement mode

TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope using
trench technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in switched mode
power supplies and general purpose
switching applications.

PINNING - TO220AB
PIN

IRFZ48N

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VDS
ID
Ptot
Tj
RDS(ON)

Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V

PIN CONFIGURATION

MAX.

UNIT

55
64
140
175
16

V
A
W
C
m

SYMBOL

DESCRIPTION

tab

gate

drain

source

tab

drain

1 23

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS
VDGR
VGS
ID
ID
IDM
Ptot
Tstg, Tj

Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature

RGS = 20 k
Tmb = 25 C
Tmb = 100 C
Tmb = 25 C
Tmb = 25 C
-

- 55

55
55
20
64
45
210
140
175

V
V
V
A
A
A
W
C

MIN.

MAX.

UNIT

kV

TYP.

MAX.

UNIT

1.1

K/W

60

K/W

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

VC

Electrostatic discharge capacitor

voltage, all pins

Human body model

(100 pF, 1.5 k)

THERMAL RESISTANCES
SYMBOL

PARAMETER

CONDITIONS

Rth j-mb

Thermal resistance junction to

mounting base
Thermal resistance junction to
ambient

Rth j-a

February 1999

in free air

Rev 1.000

Philips Semiconductors

Product specification

N-channel enhancement mode

TrenchMOSTM transistor

IRFZ48N

STATIC CHARACTERISTICS
Tj= 25C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS

Drain-source breakdown
voltage
Gate threshold voltage

VGS = 0 V; ID = 0.25 mA;

VGS(TO)

Tj = -55C
VDS = VGS; ID = 1 mA
Tj = 175C
Tj = -55C

IDSS

Zero gate voltage drain current

VDS = 55 V; VGS = 0 V;

IGSS

Gate source leakage current

VGS = 10 V; VDS = 0 V

V(BR)GSS

Gate-source breakdown
voltage
Drain-source on-state
resistance

IG = 1 mA;

RDS(ON)

Tj = 175C
Tj = 175C

VGS = 10 V; ID = 25 A
Tj = 175C

MIN.

TYP.

MAX.

UNIT

55
50
2
1
16

3.0
0.05
0.02
-

4.0
4.4
10
500
1
20
-

V
V
V
V
V
A
A
A
A
V

12
-

16
30

m
m

MIN.

TYP.

MAX.

UNIT

DYNAMIC CHARACTERISTICS
Tmb = 25C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

gfs

Forward transconductance

VDS = 25 V; ID = 25 A

39

Ciss
Coss
Crss

Input capacitance
Output capacitance
Feedback capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz

2200
500
200

2900
600
270

pF
pF
pF

Qg(tot)
Qgs
Qgd

Total gate charge

Gate-source charge
Gate-drain (Miller) charge

ID = 50 A; VDD = 44 V; VGS = 10 V

85
19
37

nC
nC
nC

td on
tr
td off
tf

Turn-on delay time

Turn-on rise time
Turn-off delay time
Turn-off fall time

VDD = 30 V; ID = 25 A;
VGS = 10 V; RG = 10
Resistive load

18
35
45
30

26
85
60
45

ns
ns
ns
ns

Ld

Internal drain inductance

3.5

nH

Ld

Internal drain inductance

4.5

nH

Ls

Internal source inductance

Measured from contact screw on

tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad

7.5

nH

February 1999

Rev 1.000

Philips Semiconductors

Product specification

N-channel enhancement mode

TrenchMOSTM transistor

IRFZ48N

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

IDR
IDRM
VSD

Continuous reverse drain

current
Pulsed reverse drain current
Diode forward voltage

trr
Qrr

Reverse recovery time

Reverse recovery charge

MIN.

TYP.

MAX.

UNIT

64

IF = 25 A; VGS = 0 V
IF = 65 A; VGS = 0 V

0.95
1.0

210
1.2
-

A
V
V

IF = 65 A; -dIF/dt = 100 A/s;

VGS = -10 V; VR = 30 V

57
0.14

ns
C

MIN.

TYP.

MAX.

UNIT

200

mJ

AVALANCHE LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

WDSS

Drain-source non-repetitive
unclamped inductive turn-off
energy

ID = 65 A; VDD 25 V;
VGS = 10 V; RGS = 50 ; Tmb = 25 C

120

Normalised Power Derating

PD%

120

110

110

100

100

90

90

80

80

70

70

60

60

50

50

40

40

30

30

20

20

10

10

0
0

20

40

60

80 100
Tmb / C

120

140

160

180

Fig.1. Normalised power dissipation.

PD% = 100PD/PD 25 C = f(Tmb)

February 1999

Normalised Current Derating

ID%

20

40

60

80 100
Tmb / C

120

140

160

180

Fig.2. Normalised continuous drain current.

ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 5 V

Rev 1.000

Philips Semiconductors

Product specification

N-channel enhancement mode

TrenchMOSTM transistor

IRFZ48N

RDS(ON)/mOhm

SOAX514

30

1000

VGS/V =

ID / A

tp =
1 us
10 us

RDS(ON) = VDS/ID
100

7
8
9
10

15

1 ms

DC

10

10 ms
100 ms
1

6.5

20

100 us

10

10

100

55

10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
ID/A

VDS / V

Fig.3. Safe operating area. Tmb = 25 C

ID & IDM = f(VDS); IDM single pulse; parameter tp

1E+01

25

Fig.6. Typical on-state resistance, Tj = 25 C.

RDS(ON) = f(ID); parameter VGS
100

BUKX514-55

Zth / (K/W)

ID/A
80

1E+00
0.5
1E-01

60

0.2
0.1
0.05
PD

0.02

tp

D=

tp
T

40

20

1E-02
0

1E-03
1E-07

1E-05

1E-03
t/s

1E-01

1E+01

Fig.4. Transient thermal impedance.

Zth j-mb = f(t); parameter D = tp/T
100

8
7.5

16
10

ID/A

VGS/V =

Tj/C =

25

175

5
VGS/V

Fig.7. Typical transfer characteristics.

ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
40
gfs/S
35

80

30
6.5

25

60

20

6
40

15
5.5

10
20
5
0

4.5
4
0

VDS/V

10

Fig.5. Typical output characteristics, Tj = 25 C.

ID = f(VDS); parameter VGS

February 1999

20

40

ID/A

60

80

100

Fig.8. Typical transconductance, Tj = 25 C.

gfs = f(ID); conditions: VDS = 25 V

Rev 1.000

Philips Semiconductors

Product specification

N-channel enhancement mode

TrenchMOSTM transistor

2.5

BUK959-60

IRFZ48N

Rds(on) normlised to 25degC

3.5
3

Thousands (pF)

1.5

2.5
Ciss

2
1.5
1
5

0.5
-100

-50

50
Tmb / degC

100

150

0
0.01

200

Fig.9. Normalised drain-source on-state resistance.

a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V

VGS(TO) / V

0.1

Coss
Crss
100

10

VDS/V

Fig.12. Typical capacitances, Ciss, Coss, Crss.

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
12

BUK759-60

VGS/V

max.

10
VDS = 14V

4
typ.

VDS = 44V

3
6

min.
2

1
2

0
-100

-50

50
Tj / C

100

150

200

Fig.10. Gate threshold voltage.

VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

10

20

30 QG/nC 40

50

60

Fig.13. Typical turn-on gate-charge characteristics.

VGS = f(QG); conditions: ID = 50 A; parameter VDS
100

Sub-Threshold Conduction

1E-01

IF/A
80

1E-02
2%

1E-03

typ

60

98%

Tj/C =

175

25

40

1E-04
20

1E-05
0

1E-06

Fig.11. Sub-threshold drain current.

ID = f(VGS); conditions: Tj = 25 C; VDS = VGS

February 1999

0.2

0.4

0.6
0.8
VSDS/V

1.2

1.4

Fig.14. Typical reverse diode current.

IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

Rev 1.000

Philips Semiconductors

Product specification

N-channel enhancement mode

TrenchMOSTM transistor

120

IRFZ48N

WDSS%

110
100

VDD

RD

90

VDS

80

70

VGS

60
50

40

RG

T.U.T.

30
20
10
0
20

40

60

80

100
120
Tmb / C

140

160

180

Fig.17. Switching test circuit.

Fig.15. Normalised avalanche energy rating.

WDSS% = f(Tmb); conditions: ID = 75 A

VDD

L
VDS

VGS

-ID/100
T.U.T.

0
RGS

R 01
shunt

Fig.16. Avalanche energy test circuit.

WDSS = 0.5 LID2 BVDSS /(BVDSS VDD )

February 1999

Rev 1.000

Philips Semiconductors

Product specification

N-channel enhancement mode

TrenchMOSTM transistor

IRFZ48N

MECHANICAL DATA
Dimensions in mm

4,5
max

Net Mass: 2 g

10,3
max
1,3

3,7
2,8

5,9
min

15,8
max

3,0 max
not tinned

3,0

13,5
min
1,3
max 1 2 3
(2x)

0,9 max (3x)

2,54 2,54

0,6
2,4

Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".

February 1999

Rev 1.000

Philips Semiconductors

Product specification

N-channel enhancement mode

TrenchMOSTM transistor

IRFZ48N

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

February 1999

Rev 1.000