Philips Semiconductors

Product Specification

PowerMOS transistor

GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.

PINNING - SOT429 (TO247)

PIN

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MAX.

MAX.

UNIT

VDS
ID
Ptot
RDS(ON)

BUK436
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance

-200A
200
19
125
0.16

-200B
200
17
125
0.2

V
A
W

PIN CONFIGURATION

SYMBOL

DESCRIPTION

gate

drain

source

tab

BUK436W-200A/B

drain

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS
VDGR
VGS

Drain-source voltage
Drain-gate voltage
Gate-source voltage

RGS = 20 k
-

200
200
30

V
V
V

ID
ID
IDM

Drain current (DC)

Drain current (DC)
Drain current (pulse peak value)

Tmb = 25 C
Tmb = 100 C
Tmb = 25 C

Ptot
Tstg
Tj

Total power dissipation

Storage temperature
Junction Temperature

Tmb = 25 C
-

- 55
-

-200A
19
12
76

-200B
17
11
68

A
A
A

125
150
150

W
C
C

THERMAL RESISTANCES
SYMBOL

PARAMETER

Rth j-mb

Thermal resistance junction to

mounting base
Thermal resistance junction to
ambient

Rth j-a

July 1997

CONDITIONS

MIN.

TYP.

MAX.

UNIT

1.0

K/W

45

K/W

Rev 1.000

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK436W-200A/B

STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance

VGS = 0 V; ID = 0.25 mA

200

VDS = VGS; ID = 1 mA
VDS = 200 V; VGS = 0 V; Tj = 25 C
VDS = 200 V; VGS = 0 V; Tj =125 C
VGS = 30 V; VDS = 0 V
VGS = 10 V;
BUK436-200A
BUK436-200B
ID = 10 A

2.1
-

3.0
1
0.1
10
0.15
0.17

4.0
10
1.0
100
0.16
0.20

V
A
mA
nA

MIN.

TYP.

MAX.

UNIT

8.5

16

VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)

DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

gfs

Forward transconductance

VDS = 25 V; ID = 10 A

Ciss
Coss
Crss

Input capacitance
Output capacitance
Feedback capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz

1500
300
60

2000
400
100

pF
pF
pF

td on
tr
td off
tf

Turn-on delay time

Turn-on rise time
Turn-off delay time
Turn-off fall time

VDD = 30 V; ID = 3 A;
VGS = 10 V;
Rgen = 50 ;
RGS = 50

20
40
145
50

30
60
185
70

ns
ns
ns
ns

Ld

Internal drain inductance

nH

Ld

Internal drain inductance

nH

Ls

Internal source inductance

Measured from contact screw on

tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad

12.5

nH

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

IDR

19

IDRM
VSD

Continuous reverse drain

current
Pulsed reverse drain current
Diode forward voltage

IF = 19 A ; VGS = 0 V

1.0

76
1.7

A
V

trr
Qrr

Reverse recovery time

Reverse recovery charge

IF = 19 A; -dIF/dt = 100 A/s;

VGS = 0 V; VR = 30 V

180
2.5

ns
C

July 1997

Rev 1.000

Philips Semiconductors

Product Specification

PowerMOS transistor

Normalised Power Derating

PD%

120

BUK436W-200A/B

Zth j-mb / (K/W)

10

BUKx56-lv

110
100
90

D=

80

0.5

70

0.2
0.1
0.05

60
50

0.1

0.02

40
30

0.01

tp

PD

D=

20
10
0
0

20

40

60

80
100
Tmb / C

120

140

1E-05

Fig.1. Normalised power dissipation.

PD% = 100PD/PD 25 C = f(Tmb)

120

1E-03
t/s

1E-01

1E+01

Fig.4. Transient thermal impedance.

Zth j-mb = f(t); parameter D = tp/T

Normalised Current Derating

ID%

0.001

tp
T

40

BUK456-200A
7
6

ID / A
20

110

10

100
90

30

80
70
60
50

20
5

VGS / V =

40
30

10

20
10

4
0

0
0

20

40

60

80
Tmb / C

100

120

140

BUK436-200A,B

ID / A

1.0

ID
S/

N)

VD

10

10 12
VDS / V

0.8

16

18

20

BUK456-200A

4.5

VGS / V =
5.5

100 us

A B

14

RDS(ON) / Ohm

tp = 10 us

(O

S
RD

Fig.5. Typical output characteristics, Tj = 25 C.

ID = f(VDS); parameter VGS

Fig.2. Normalised continuous drain current.

ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 10 V

100

0.6
DC

1 ms

0.4

10 ms
1

100 ms

10

0.2

0.1
1

10

100
VDS / V

1000

Fig.3. Safe operating area. Tmb = 25 C

ID & IDM = f(VDS); IDM single pulse; parameter tp

July 1997

10

20
ID / A

30

40

Fig.6. Typical on-state resistance, Tj = 25 C.

RDS(ON) = f(ID); parameter VGS

Rev 1.000

Philips Semiconductors

Product Specification

PowerMOS transistor

40

BUK436W-200A/B

ID / A

VGS(TO) / V

BUK456-200A

max.

30

typ.

min.

20

Tj / C =
10

25

150

10

-60

-40

-20

VGS / V

gfs / S

40
60
Tj / C

80

100

120

140

Fig.10. Gate threshold voltage.

VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Fig.7. Typical transfer characteristics.

ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj

20

20

BUK456-200A

SUB-THRESHOLD CONDUCTION

ID / A

1E-01

1E-02

15
2%

1E-03

typ

98 %

10
1E-04

1E-05

1E-06

10

20
ID / A

30

40

Fig.8. Typical transconductance, Tj = 25 C.

gfs = f(ID); conditions: VDS = 25 V

2
VGS / V

Fig.11. Sub-threshold drain current.

ID = f(VGS); conditions: Tj = 25 C; VDS = VGS

Normalised RDS(ON) = f(Tj)

2.4
2.2
2.0
1.8
1.6
1.4

10000

BUK4y6-200

C / pF

Ciss
1000

1.2
1.0
0.8
0.6
0.4
0.2

Coss
100
Crss

0
-60 -40 -20

20

40 60
Tj / C

80

10

100 120 140

40
VDS / V

Fig.9. Normalised drain-source on-state resistance.

a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 10 A; VGS = 10 V

July 1997

20

Fig.12. Typical capacitances, Ciss, Coss, Crss.

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

Rev 1.000

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK436W-200A/B

BUK456-200

VGS / V

12

40

IF / A

BUK456-200A

VDS / V =40

10

30

8
Tj / C = 150

160
6

25

20

4
10

2
0

10

20
QG / nC

30

40

Fig.13. Typical turn-on gate-charge characteristics.

VGS = f(QG); conditions: ID = 19 A; parameter VDS

July 1997

1
VSDS / V

Fig.14. Typical reverse diode current.

IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

Rev 1.000

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK436W-200A/B

MECHANICAL DATA
Dimensions in mm

5.3 max

16 max

1.8

Net Mass: 5 g
5.3

o 3.5
max

7.3

3.5
21
max

seating
plane

15.5
max

2.5

15.5
min

4.0
max
1

3
0.9 max

2.2 max

1.1

3.2 max
5.45

0.4 M

5.45

Fig.15. SOT429 (TO247); pin 2 connected to mounting base.

Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelopes.
3. Epoxy meets UL94 V0 at 1/8".

July 1997

Rev 1.000

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK436W-200A/B

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

July 1997

Rev 1.000

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