BLF278 Wideband RF Power Mosfet

BLF278
VHF push-pull power MOS transistor

Rev. 5 1 September 2015
Product data sheet
IMPORTANT NOTICE
Dear customer,
As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as
an independent company under the new trade name Ampleon, which will be used
in future data sheets together with new contact details.
In data sheets, where the previous Philips references is mentioned, please use
the new links as shown below.
http://www.philips.semiconductors.com use http://www.ampleon.com
http://www.semiconductors.philips.com use http://www.ampleon.com (Internet)
sales.addresses@www.semiconductors.philips.com use
http://www.ampleon.com/sales
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with:
- Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest
sales office (details via http://www.ampleon.com/sales).
Thank you for your cooperation and understanding,
Ampleon
Philips Semiconductors
Product Specification

FEATURES
BLF278
PINNING - SOT262A1
High power gain
PIN
DESCRIPTION
Easy power control
drain 1
Good thermal stability
drain 2
Gold metallization ensures excellent reliability.
gate 1
gate 2
source
APPLICATIONS
Broadcast transmitters in the VHF frequency range.
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead,
SOT262A1 balanced flange package with two ceramic
caps. The mounting flange provides the common source
connection for the transistors.
2
d
g
s
g
5
3
Top view
This product is supplied in anti-static packing to prevent

damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
CAUTION
MAM098
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA

RF performance at Th = 25 C in a push-pull common source test circuit.
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
D
(%)
CW, class-B
108
50
300
>20
>60
CW, class-C
108
50
300
typ. 18
typ. 80
CW, class-AB
225
50
250
>14
typ. 16
>50
typ. 55
MODE OF OPERATION
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2003 Sep 19
BLF278
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section

VDS
drain-source voltage
125
VGS
gate-source voltage
20
ID
drain current (DC)
18
Ptot
total power dissipation
500
Tstg
storage temperature
65
150
Tj
junction temperature
200
Tmb 25 C; total device; both

sections equally loaded
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction total device; both sections

to mounting base
equally loaded.
max. 0.35
K/W
Rth mb-h
thermal resistance from

mounting base to heatsink
max. 0.15
K/W
total device; both sections

equally loaded.
MRA988
100
MGE616
500
handbook, halfpage
handbook, halfpage
Ptot
(W)
ID
(A)
400
(2)
(1)
(2)
(1)
300
10
200
100
10
500
100
40
80
Total device; both sections equally loaded.

(1) Current is this area may be limited by RDSon.
(2) Tmb = 25 C.
160
Total device; both sections equally loaded.

(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.2 DC SOAR.
2003 Sep 19
120
Th (C)
VDS (V)
Fig.3 Power derating curves.
BLF278
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor section

V(BR)DSS
drain-source breakdown voltage VGS = 0; ID = 100 mA
125
IDSS
drain-source leakage current
VGS = 0; VDS = 50 V
2.5
mA
IGSS
gate-source leakage current
VGS = 20 V; VDS = 0
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 50 mA
4.5
VGS
gate-source voltage difference

of both sections
VDS = 10 V; ID = 50 mA
100
mV
gfs
forward transconductance
VDS = 10 V; ID = 5 A
4.5
6.2
gfs1/gfs2
forward transconductance ratio

of both sections
VDS = 10 V; ID = 5 A
0.9
1.1
RDSon
drain-source on-state resistance VGS = 10 V; ID = 5 A
0.2
0.3
IDSX
drain cut-off current
VGS = 10 V; VDS = 10 V
25
Cis
input capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
480
pF
Cos
output capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
190
pF
Crs
feedback capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
14
pF
Cd-f
drain-flange capacitance
5.4
pF
VGS group indicator

LIMITS
(V)
GROUP
LIMITS
(V)
GROUP
MIN.
MAX.
MIN.
MAX.
2.0
2.1
3.3
3.4
2.1
2.2
3.4
3.5
C
D
2.2
2.3
3.5
3.6
2.3
2.4
3.6
3.7
2.4
2.5
3.7
3.8
2.5
2.6
3.8
3.9
2.6
2.7
3.9
4.0
2.7
2.8
4.0
4.1
2.8
2.9
4.1
4.2
2.9
3.0
4.2
4.3
3.0
3.1
4.3
4.4
3.1
3.2
4.4
4.5
3.2
3.3
2003 Sep 19
BLF278
MGE623
MGE622
30
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
ID
(A)
20
2
3
10
4
5
102
101
0
1
ID (A)
10
10
VGS (V)
15
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source

voltage as a function of drain current; typical
values per section.
Fig.5
MGE621
400
Drain current as a function of gate-source

voltage; typical values per section.
MGE615
1200
handbook, halfpage
handbook, halfpage
RDSon
(m)
C
(pF)
300
800
200
Cis
400
100
Cos
0
0
50
100
150
20
Tj (C)
VGS = 10 V; ID = 5 A.
VGS = 0; f = 1 MHz.
Fig.6
Fig.7
Drain-source on-state resistance as a

function of junction temperature; typical
values per section.
2003 Sep 19
40
VDS (V)
60
Input and output capacitance as functions

of drain-source voltage; typical values per
section.
BLF278
MGE620
400
handbook, halfpage
Crs
(pF)
300
200
100
0
0
10
20
30
40
50
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of

drain-source voltage; typical values per
section.
APPLICATION INFORMATION
Class-B operation
RF performance in CW operation in a common source push-pull test circuit. Th = 25 C; Rth mb-h = 0.15 K/W unless
otherwise specified. RGS = 4 per section; optimum load impedance per section = 3.2 + j4.3 (VDS = 50 V).
f
(MHz)
VDS
(V)
IDQ
(A)
PL
(W)
Gp
(dB)
D
(%)
CW, class-B
108
50
2 0.1
300
>20
typ. 22
>60
typ. 70
CW, class-C
108
50
VGS = 0
300
typ. 18
typ. 80
MODE OF OPERATION
Ruggedness in class-B operation

The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the
following conditions: VDS = 50 V; f = 108 MHz at rated load power.
2003 Sep 19
BLF278
MGE682
30
MGE683
80
handbook, halfpage
handbook, halfpage
D
(%)
Gp
(dB)
(2)
(1)
(1)
60
20
(2)
(1)
40
(2)
10
20
0
0
200
400
PL (W)
600
200
400
PL (W)
600
Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; f = 108 MHz;

ZL = 3.2 + j4.3 (per section); RGS = 4 (per section).
(1) Th = 25 C.
(2) Th = 70 C.

(1) Th = 25 C.
(2) Th = 70 C.
Fig.9
Fig.10 Efficiency as a function of load power;

typical values.
Power gain as a function of load power;

typical values.
MGE684
600
handbook, halfpage
PL
(W)
(1)
400
(2)
200
0
0
10
Pi (W)
15

(1) Th = 25 C.
(2) Th = 70 C.
Fig.11 Load power as a function of input power;

typical values.
2003 Sep 19
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C21
R2
C8
C12
R8
L11
R3
C22
C13
C9
C17
,,,, ,,,,
,,,, ,,,,
R4
L12
D.U.T.
L9
50
input
C3
T1
C1
R1
8
C2
L1
C6
C5
L13 L17 L19
C31
C7
C28
C27
C26
C29
C33
R10
C34
L4 L6 L8
L10
L14
L18
L20
R5
L15
C10
50
output
L22
C30
C4
L2
,,
L21
L3 L5 L7
C16
2003 Sep 19
+VDD1
C20
handbook, full pagewidth
C32
,,
L23
MGE688
C23
C14
C18
A
R6
C15
R9
C35
+VDD1
L16
R11
IC1
C24
R7
C37
C11
C19
C25
Fig.12 Class-B test circuit at f = 108 MHz.
BLF278
+VDD2
C36
BLF278
List of components (see Figs 12 and 13).

COMPONENT
DESCRIPTION
VALUE
C1, C2, C33, C34 multilayer ceramic chip capacitor;

note 1
22 pF, 500 V
C3, C4
100 pF + 68 pF
in parallel, 500 V
multilayer ceramic chip capacitor;

note 1
C5, C6, C28
film dielectric trimmer
5 to 60 pF
C7

note 1
2 100 pF +
1 120 pF in
parallel, 500 V
C8, C11, C12,

C15, C16, C19,
C36
multilayer ceramic chip capacitor
100 nF, 500 V
C9, C10, C13,

C14, C20, C25

note 1
1 nF, 500 V
C17, C18, C22,

C23

note 1
470 pF, 500 V
DIMENSIONS
2222 809 08003
2222 852 47104
C21, C24, C35
electrolytic capacitor
10 F, 63 V
C26

note 1
2 15 pF +
1 18 pF in
parallel, 500 V
C27

note 1
3 15 pF in
parallel, 500 V
C29

note 1
2 18 pF +
1 15 pF in
parallel, 500 V
C30
2 to 18 pF
C31, C32

note 1
3 43 pF in
parallel, 500 V
L1, L2
stripline; note 2
43
length 57.5 mm
width 6 mm
L3, L4
stripline; note 2
43
length 29.5 mm
width 6 mm
L5, L6
stripline; note 2
43
length 14 mm
width 6 mm
L7, L8
stripline; note 2
43
length 6 mm
width 6 mm
L9, L10
stripline; note 2
43
length 17.5 mm
width 6 mm
L11, L16
2 grade 3B Ferroxcube wideband

HF chokes in parallel
L12, L15
4 turns enamelled 2 mm copper wire
85 nH
length 13.5 mm
int. dia. 10 mm
leads 2 7 mm
L13, L14
stripline; note 2
43
length 19.5 mm
width 6 mm
2003 Sep 19
CATALOGUE NO.
2222 809 09006
4312 020 36642
COMPONENT
BLF278
DESCRIPTION
VALUE
DIMENSIONS
L17, L18
stripline; note 2
43
length 24.5 mm
width 6 mm
L19, L20
stripline; note 2
43
length 66 mm
width 6 mm
L21, L23
stripline; note 2
50
length 160 mm
width 4.8 mm
L22
semi-rigid cable; note 3
50
ext. dia. 3.6 mm

outer conductor
length 160 mm
R1
metal film resistor
10 , 0.4 W
R2, R7
10 turn potentiometer
50 k
R3, R6
metal film resistor
3 12.1 in
parallel, 0.4 W
R4, R5
metal film resistor
10 ; 0.4 W
R8, R9
metal film resistor
10 5%, 1 W
R10
metal film resistor
4 10 in
parallel, 1 W
R11
metal film resistor
5.11 k, 1 W
IC1
voltage regulator 78L05
T1
1:1 Balun; 7 turns type 4C6 50

coaxial cable wound around toroid
14 9 5 mm
CATALOGUE NO.
4322 020 90770
Notes
1. American Technical Ceramics capacitor, type 100B or capacitor of same quality.
2. L1 to L10, L13, L14, L17 to L21 and L23 are striplines on a double copper-clad printed-circuit board, with fibre-glass
PTFE dielectric (r = 2.2), thickness 116 inch; thickness of copper sheet 2 35 m.
3. L22 is soldered on to stripline L21.
2003 Sep 19
10
BLF278
150
130
strap
strap
strap
strap
strap
100
strap
strap
strap
C20
IC1
V DD1
C11
R11
C36
50
input
T1
C35
C8
slider R2
C12
C1 C3
R1
C2 C4
L3
L1
C5
C22
R2 and R7
C9
C13
R3
R4
C7 L5
L7
C17
L4
C15
slider R7
L6
L8
C21
50
output
V DD1
L21
L12
C31
L9
C6
L2
L22
L11 C16
R8
L11
L10
R5
R6
L13
C26
L14
L15
C10
C14
C18
C23
L17
C27
L18
C33
L19
C29
C28
L20
C30
C34
C32
L23
V DD2
L16
R9
L16 C19
R10
C24
C25
MBC438
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth.
Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Fig.13 Printed-circuit board and component layout for 108 MHz class-B test circuit.
2003 Sep 19
11
BLF278
MGE685
MGE686
handbook, halfpage
handbook, halfpage
Zi
()
ZL
()
ri
RL
XL
2
xi
0
25
75
125
f (MHz)
25
175
75
125
f (MHz)
175
Class-B operation; VDS = 50 V; IDQ = 2 0.1 A;

RGS = 4 (per section); PL = 300 W.

Fig.14 Input impedance as a function of frequency

(series components); typical values per
section.
Fig.15 Load impedance as a function of frequency

section.
MGE687
30
handbook, halfpage
Gp
(dB)
20
handbook, halfpage
10
Zi
ZL
MBA379
0
25
75
125
f (MHz)
175

Fig.17 Power gain as a function of frequency;

typical values per section.
Fig.16 Definition of MOS impedance.
2003 Sep 19
12
BLF278
Class-AB operation
RF performance in CW operation in a common source push-pull test circuit. Th = 25 C; Rth mb-h = 0.15 K/W unless
otherwise specified. RGS = 2.8 per section; optimum load impedance per section = 0.74 + j2 ; (VDS = 50 V).
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(A)
PL
(W)
Gp
(dB)
D
(%)
CW, class-AB
225
50
2 0.5
250
>14
typ. 16
>50
typ. 55
Ruggedness in class-AB operation

The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the
following conditions: VDS = 50 V; f = 225 MHz at rated output power.
2003 Sep 19
13
BLF278
MGE614
MGE612
60
20
handbook, halfpage
handbook, halfpage
(1)
D
(%)
(2)
Gp
(dB)
(1)
(2)
40
10
20
0
0
100
200
300
PL (W)
100
200
PL (W)
300
Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; f = 225 MHz;

ZL = 0.74 + j2 (per section); RGS = 2.8 (per section).
(1) Th = 25 C.
(2) Th = 70 C.

(1) Th = 25 C.
(2) Th = 70 C.
Fig.18 Power gain as a function of load power;

typical values.
Fig.19 Efficiency as a function of load power;

typical values.
MGE613
400
handbook, halfpage
PL
(W)
300
(1)
(2)
200
100
0
0
10
Pi (W)
15

(1) Th = 25 C.
(2) Th = 70 C.
Fig.20 Load power as a function of input power;

typical values.
2003 Sep 19
14
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C23
R2
R8
C10
L14
C15
R3
C24
C11
C8
,,,
,,,
15
,,,
,,,
R4
C3
L1
50
input
C16
L4
C1
R1
L2
C2
C5
C4
L3
,,,,
L15
D.U.T.
L12
L6 L8 L10
C6
L20
,,,,
C7
C21 C28
C20
L7 L9 L11
L5
L18
L13
R5
L19
C29
L21
L16
C9
C31
,,
L22
C33
R10
,,
L23
C30
C34
C32
50
output
C22
C14
2003 Sep 19
+VDD1
L24
MGE617
C17
C12
C25
C18
R6
C13
C35
+VDD1
L17
R9
R11
IC1
R7
C38
C37
C26
C36
C19
C27
+VDD2
BLF278
Fig.21 Class-AB test circuit at f = 225 MHz.
BLF278
List of components (see Figs 21 and 22).

COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C2

note 1
27 pF, 500 V
C3, C4, C31, C32

note 1
3 18 pF
in parallel, 500 V
C5
4 to 40 pF
2222 809 08002
C6, C30
2 to 18 pF
2222 809 09006
C7

note 1
100 pF, 500 V
C8, C9, C15, C18
MKT film capacitor
1 F, 63 V
2222 371 11105
C10, C13, C14,

C19, C36
multilayer ceramic chip capacitor
100 nF, 50 V
2222 852 47104
C11, C12

note 1
2 1 nF in parallel,
500 V
C16, C17
220 F, 63 V
C20

note 1
3 33 pF in
parallel, 500 V
C21
2 to 9 pF
C22, C27, C37,

C38

note 1
1 nF, 500 V
C23, C26, C35
10 F, 63 V
C24, C25

note 1
2 470 pF in
parallel, 500 V
C28

note 1
2 10 pF +
1 18 pF in
parallel, 500 V
C29

note 1
2 5.6 pF in
parallel, 500 V
C33, C34

note 1
5.6 pF, 500 V
L1, L3, L22, L24
stripline; note 2
50
length 80 mm
width 4.8 mm
L2, L23
semi-rigid cable; note 3
50
ext. dia. 3.6 mm

outer conductor
length 80 mm
L4, L5
stripline; note 2
43
length 24 mm
width 6 mm
L6, L7
stripline; note 2
43
length 14.5 mm
width 6 mm
L8, L9
stripline; note 2
43
length 4.4 mm
width 6 mm
L10, L11
stripline; note 2
43
length 3.2 mm
width 6 mm
L12, L13
stripline; note 2
43
length 15 mm
width 6 mm
2003 Sep 19
16
2222 809 09005
COMPONENT
BLF278
DESCRIPTION
VALUE
DIMENSIONS
L14, L17
2 grade 3B Ferroxcube
wideband HF chokes in parallel
L15, L16
134 turns enamelled 2 mm copper

wire
40 nH
int. dia. 10 mm
leads 2 7 mm
space 1 mm
L18, L19
stripline; note 2
43
length 13 mm
width 6 mm
L20, L21
stripline; note 2
43
length 29.5 mm
width 6 mm
R1
metal film resistor
10 , 0.4 W
R2, R7
10 turns potentiometer
50 k
R3, R6
metal film resistor
1 k, 0.4 W
R4, R5
metal film resistor
2 5.62 , in
parallel, 0.4 W
R8, R9
metal film resistor
10 5%, 1 W
R10
metal film resistor
4 42.2 in
parallel, 1 W
R11
metal film resistor
5.11 k, 1 W
IC1
voltage regulator 78L05
CATALOGUE NO.
4312 020 36642
Notes
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.
2. L1, L3 to L13, L18 to L22 and L24 are microstriplines on a double copper-clad printed-circuit board, with fibre-glass
reinforced PTFE dielectric (r = 2.2), thickness 116 inch; thickness of copper sheet 2 35 m.
3. L2 and L23 are soldered on to striplines L1 and L24 respectively.
2003 Sep 19
17
BLF278
130
119
strap
strap
strap
strap
Hollow
rivets
Hollow
rivets
100
strap
strap
strap
strap
C24
VDD1
R11
C38
L2
C35
slider R2
L1
C1
50
input
to R2,R7
C36
C16
IC1
C3
R1
C2
C37
C11
C8
C10 R3
R4
L4 C6 L6 L8 L10
C5
C7
L7 L9 L11
L5
C4
C13 R6
L3
slider R7
C15
L15
L12
C20
L13
R5
C12
C18
C17
C23
L22
VDD1
C30 C31C33
L18 C28 L20
C21
C29
L19
L21
C34
C32
L16
C9
C22
C14
L14
R8
L14
R10
50
output
VDD2
L17
R9
L17 C19
C25
L23
L24
C26
C27
MBC436
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth.
Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Fig.22 Printed-circuit board and component layout for 225 MHz class-AB test circuit.
2003 Sep 19
18
BLF278
MGE611
MGE625
handbook, halfpage
handbook, halfpage
zi
()
ZL
()
ri
XL
xi
RL
2
150
200
f (MHz)
0
150
250
200
f (MHz)
250
Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A;

RGS = 2.8 (per section); PL = 250 W.

Fig.23 Input impedance as a function of frequency

section.
Fig.24 Load impedance as a function of frequency

section.
MGE624
20
handbook, halfpage
Gp
(dB)
handbook, halfpage
10
Zi
ZL
MBA379
0
150
200
f (MHz)
250

Fig.26 Power gain as a function of frequency;

typical values per section.
Fig.25 Definition of MOS impedance.
2003 Sep 19
19
BLF278
BLF278 scattering parameters

VDS = 50 V; ID = 500 mA; note 1
s11
f (MHz)
s21
s12
s22
|s11|
|s21|
|s12|
|s22|
0.87
142.1
60.05
104.3
0.00
19.4
0.83
160.9
10
0.88
159.8
32.09
91.4
0.00
0.68
167.5
165.8
20
0.88
169.0
15.70
77.3
0.01
13.4
0.62
177.6
30
0.88
171.2
9.98
68.4
0.01
3.4
0.64
175.8
40
0.89
172.2
6.99
61.0
0.01
4.4
0.66
171.2
50
0.91
172.9
5.24
55.0
0.01
10.3
0.70
168.1
60
0.92
173.5
4.08
49.6
0.01
15.0
0.74
166.8
70
0.93
174.1
3.26
44.9
0.01
18.3
0.78
166.5
80
0.94
174.7
2.66
41.0
0.01
19.8
0.80
166.5
90
0.95
175.2
2.22
37.5
0.00
19.7
0.83
166.7
100
0.95
175.7
1.88
34.0
0.00
18.0
0.85
167.4
125
0.97
176.9
1.27
26.8
0.00
1.9
0.88
169.4
150
0.97
177.9
0.91
22.7
0.00
35.3
0.91
170.0
175
0.98
178.7
0.69
19.5
0.00
65.3
0.94
170.8
200
0.98
179.5
0.54
16.0
0.00
78.0
0.95
172.4
250
0.99
179.2
0.35
12.1
0.01
86.7
0.96
174.0
300
0.99
178.1
0.25
9.1
0.01
87.8
0.98
175.5
350
0.99
177.1
0.19
8.2
0.01
90.3
0.98
176.5
400
0.99
176.1
0.14
7.2
0.01
91.4
0.99
177.6
450
0.99
175.1
0.11
8.1
0.02
92.2
0.99
178.3
500
0.99
174.2
0.09
9.7
0.02
91.5
0.99
179.2
600
0.99
172.4
0.07
14.8
0.02
91.4
0.99
179.5
700
0.99
170.7
0.05
24.0
0.03
91.6
0.99
178.3
800
0.99
168.9
0.04
35.6
0.03
92.5
1.00
177.1
900
0.99
167.1
0.04
46.0
0.04
93.1
1.00
176.0
1000
0.99
165.2
0.04
60.3
0.04
94.1
1.00
175.0
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast.
2003 Sep 19
20
BLF278
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads
SOT262A1
A
F
D1
U1
C
w2 M C M
H1
U2
E1
5
A
w1 M A M B M
4
w3 M
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
5.77
5.00
5.85
5.58
0.16
0.10
inches
D1
E1
22.17 21.98
10.27 10.29
11.05
21.46 21.71
10.05 10.03
1.78
1.52
H1
21.08 17.02
19.56 16.51
U1
U2
w1
w2
w3
3.28
3.02
2.85
2.59
27.94
34.17
33.90
9.91
9.65
0.25
0.51
0.25
0.227 0.230 0.006 0.873 0.865

0.404 0.405 0.070 0.830 0.670 0.129 0.112
1.345 0.390
1.100
0.010 0.020 0.010
0.435
0.197 0.220 0.004 0.845 0.855
0.396 0.396 0.060 0.770 0.650 0.119 0.102
1.335 0.380
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
99-03-29
SOT262A1
2003 Sep 19
EUROPEAN
PROJECTION
21
BLF278
DATA SHEET STATUS

LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes Philips Semiconductors

reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status Production), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information Applications that are

described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Sep 19
22
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
SCA75
Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/04/pp23
Date of release: 2003
Sep 19
Document order number:
9397 750 11599

BLF278 Wideband RF Power Mosfet

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BLF278 Wideband RF Power Mosfet

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BLF278

VHF push-pull power MOS transistor

Product data sheet

VHF push-pull power MOS transistor

High power gain

Easy power control

Good thermal stability

Gold metallization ensures excellent reliability.

This product is supplied in anti-static packing to prevent

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

VHF push-pull power MOS transistor

Per transistor section

drain current (DC)

total power dissipation

Tmb 25 C; total device; both

thermal resistance from junction total device; both sections

thermal resistance from

total device; both sections

Total device; both sections equally loaded.

Total device; both sections equally loaded.

Fig.3 Power derating curves.

VHF push-pull power MOS transistor

Per transistor section

drain-source breakdown voltage VGS = 0; ID = 100 mA

drain-source leakage current

gate-source leakage current

gate-source threshold voltage

gate-source voltage difference

forward transconductance ratio

drain-source on-state resistance VGS = 10 V; ID = 5 A

drain cut-off current

VGS = 0; VDS = 50 V; f = 1 MHz

VGS = 0; VDS = 50 V; f = 1 MHz

VGS = 0; VDS = 50 V; f = 1 MHz

VGS group indicator

VHF push-pull power MOS transistor

Temperature coefficient of gate-source

Drain current as a function of gate-source

Drain-source on-state resistance as a

Input and output capacitance as functions

VHF push-pull power MOS transistor

Feedback capacitance as a function of

Ruggedness in class-B operation

VHF push-pull power MOS transistor

Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; f = 108 MHz;

Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; f = 108 MHz;

Fig.10 Efficiency as a function of load power;

Power gain as a function of load power;

Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; f = 108 MHz;

Fig.11 Load power as a function of input power;

L13 L17 L19

VHF push-pull power MOS transistor

handbook, full pagewidth

Fig.12 Class-B test circuit at f = 108 MHz.

VHF push-pull power MOS transistor

List of components (see Figs 12 and 13).

C1, C2, C33, C34 multilayer ceramic chip capacitor;

multilayer ceramic chip capacitor;

C5, C6, C28

film dielectric trimmer

multilayer ceramic chip capacitor;

C8, C11, C12,