Irf740b PDF

IRF740B/IRFS740B
400V N-Channel MOSFET

General Description
Features
These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
electronic lamp ballasts based on half bridge.
10A, 400V, RDS(on) = 0.54 @VGS = 10 V

Low gate charge ( typical 41 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220
G DS
GD S
IRF Series
TO-220F
IRFS Series
Absolute Maximum Ratings

Symbol
VDSS
ID
TC = 25C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current
IRF740B
IRFS740B
Units
V
A
400
- Continuous (TC = 100C)
10
10 *
6.3
6.3 *
40
40 *
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
10
EAR
Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)
(Note 1)
13.4
5.5
-55 to +150
mJ
V/ns
W
W/C
C
300
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
30
450
mJ
134
1.08
44
0.35
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC
Parameter
Thermal Resistance, Junction-to-Case
RCS
Thermal Resistance, Case-to-Sink
RJA
Thermal Resistance, Junction-to-Ambient
2001 Fairchild Semiconductor Corporation
IRF740B
0.93
IRFS740B
2.86
Units
C/W
0.5
--
C/W
62.5
62.5
C/W
Rev. A, November 2001
IRF740B/IRFS740B
November 2001
Symbol
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
400
--
--
--
0.4
--
V/C
VDS = 400 V, VGS = 0 V
--
--
10
VDS = 320 V, TC = 125C
--
--
100
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
--
0.43
0.54
--
9.6
--
--
1400
1800
pF
--
150
195
pF
--
35
45
pF
--
20
50
ns
--
80
170
ns
--
125
260
ns
--
85
180
ns
--
41
53
nC
--
--
nC
--
17
--
nC
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
BVDSS
/
TJ
Breakdown Voltage Temperature

Coefficient
ID = 250 A, Referenced to 25C
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.0 A
gFS
Forward Transconductance
VDS = 40 V, ID = 5.0 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 200 V, ID = 10 A,
RG = 25
(Note 4, 5)
VDS = 320 V, ID = 10 A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
10
ISM
--
--
40
VSD
Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 10 A
Drain-Source Diode Forward Voltage
--
--
1.5
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 10 A,
dIF / dt = 100 A/s
(Note 4)
--
330
--
ns
--
3.57
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.9mH, IAS = 10A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 10A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature
IRF740B/IRFS740B
Electrical Characteristics
IRF740B/IRFS740B
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
ID, Drain Current [A]
10
10
10
150 C
o
25 C
10
-55 C
Notes :
1. VDS = 40V
2. 250 s Pulse Test
Notes :
1. 250 s Pulse Test
2. TC = 25
-1
-1
10
10
-1
10
10
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.4
10
VGS = 10V
IDR, Reverse Drain Current [A]
RDS(ON) [ ],
Drain-Source On-Resistance
2.0
1.6
VGS = 20V
1.2
0.8
0.4
10
25
150
Notes :
1. VGS = 0V
2. 250 s Pulse Test
Note : TJ = 25
-1
0.0
0
10
15
20
25
30
35
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage

Variation with Source Current
and Temperature
3000
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
2500
12
VDS = 80V
10
Capacitance [pF]
2000
Ciss
1500
Coss
1000
Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
500
VGS, Gate-Source Voltage [V]
VDS = 200V
VDS = 320V
2
Note : ID = 10 A
0
-1
10
10
10
10
15
20
25
30
35
40
45
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
IRF740B/IRFS740B
(Continued)
1.2
3.0
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
50
100
150
2.0
1.5
1.0
Notes :
1. VGS = 10 V
2. ID = 5.0 A
0.5
0.0
-100
200
Figure 7. Breakdown Voltage Variation

vs Temperature
10
1 ms
10 ms
DC
10
Notes :
200
1 ms
10 ms
100 ms
DC
10
-1
Notes :
10
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
150
100 s
10 s
100 s
10
100
Operation in This Area

is Limited by R DS(on)
10
Operation in This Area

is Limited by R DS(on)
50
Figure 8. On-Resistance Variation

vs Temperature
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
10
-50
-2
10
10
10
10
10
10
10
10
10
Figure 9-1. Maximum Safe Operating Area

for IRF740B
Figure 9-2. Maximum Safe Operating Area

for IRFS740B
10
0
25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current

vs Case Temperature
(Continued)
D = 0 .5
N o te s :
1 . Z J C (t) = 0 .9 3 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)
0 .2
10
0 .1
-1
0 .0 5
PDM
0 .0 2
JC
(t), T h e r m a l R e s p o n s e
10
IRF740B/IRFS740B
0 .0 1
t1
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
D = 0 .5
10
0 .2
N o te s :
1 . Z J C (t) = 2 .8 6 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)
0 .1
0 .0 5
10
-1
0 .0 2
JC
(t), T h e r m a l R e s p o n s e
Figure 11-1. Transient Thermal Response Curve for IRF740B
PDM
0 .0 1
t1
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for IRFS740B
IRF740B/IRFS740B
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50K
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
ID (t)
VDS (t)
VDD
tp
Time
IRF740B/IRFS740B
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
IRF740B/IRFS740B
Package Dimensions
TO - 220
Dimensions in Millimeters
(Continued)
3.30 0.10
TO-220F
10.16 0.20
2.54 0.20
3.18 0.10
(7.00)
(1.00x45)
15.87 0.20
15.80 0.20
6.68 0.20
(0.70)
0.80 0.10
)
0
(3
9.75 0.30
MAX1.47
#1
+0.10
0.50 0.05
2.54TYP
[2.54 0.20]
2.76 0.20
2.54TYP
[2.54 0.20]
9.40 0.20
4.70 0.20
0.35 0.10
Dimensions in Millimeters
IRF740B/IRFS740B
Package Dimensions
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
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Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
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EnSigna
FACT
FACT Quiet Series
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FRFET
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
OPTOLOGIC
OPTOPLANAR
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POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SLIENT SWITCHER
SMART START
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TruTranslation
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UHC
UltraFET
VCX
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support

device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4

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IRF740B/IRFS740B

400V N-Channel MOSFET

These N-Channel enhancement mode power field effect

10A, 400V, RDS(on) = 0.54 @VGS = 10 V

Absolute Maximum Ratings

TC = 25C unless otherwise noted

- Continuous (TC = 100C)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

- Derate above 25C

* Drain current limited by maximum junction temperature

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

TC = 25C unless otherwise noted

VDS = 400 V, VGS = 0 V

VDS = 320 V, TC = 125C

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

ID = 250 A, Referenced to 25C

Zero Gate Voltage Drain Current

Gate Threshold Voltage

VDS = VGS, ID = 250 A

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Reverse Recovery Time

Reverse Recovery Charge

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

ID, Drain Current [A]

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

IDR, Reverse Drain Current [A]

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Figure 4. Body Diode Forward Voltage

Ciss = Cgs + Cgd (Cds = shorted)

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

Figure 7. Breakdown Voltage Variation

ID, Drain Current [A]

ID, Drain Current [A]

Operation in This Area