ECEN5817 Lecture 44

On-campus students:
Pick up final exam
Due by 2pm on Wednesday, May 9 in the instructors office
Off-campus students:
Pick up and submit the exam via D2L
Exam is due in 5 days from the start time but no work will be
accepted after 5pm MT on Wednesday, May 16

ECEN 5817

ECEN5817 Lecture 44

Dual-active-bridge converter*
Q1

Q3

v2
Vg

Q5

1:n

v4

Q7

v6

v8

Q2

Q6

Q4

Q8
_

* R.W.A.A. De Doncker, D.M. Divan, M.H. Kheraluwala, "A Three-phase Soft-Switched High-Power-Density DC-DC
Converter for High-Power Applications," IEEE Tran. on Industry Applications, Jan/Feb 1991, Vol. 27, No. 1, pp. 63-73.

ECEN 5817

io
Q1

DCX (V/nVg = 1) waveforms

neglecting resonant transitions

v2
Vg

Phase
shift

0<d<1
dTs/2

Q3

il

Q5

Ll

v4
+
vp
_

Q2

1:n

Q7

v6

v8

+
vs
_

Q6

Q4

Q8
_

nI o (1 d ) I pk
2Vg Ts
2 I pk
d
Ll
2
Vg dTs
I pk
Ll 2
Vg Ts
Io
d (1 d )
2nLl

vp
vs/n

il
Ipk
nIo

nio
Ts/2

Ts

Note how phase

shift d controls the
DCX power flow
ECEN 5817

Dual Active Bridge (DAB) DC-DC Converter

Q1

Q3

Q5

Q7

Cp Cp

Cs
Ll

il

Vg

+
vp

1:nt

Q4
Cp Cp

+
vs

Cout

Q6

Q8
Cs

il
vds6
vds2

Cs

Q2

vds4

io

Cs

Rout

+
Vout

150-to-12 V, 100 W
1 MHz
Efficiency: 97.5%

Zero-voltage switching of all

transistors
Relatively low peak and RMS
current stresses
Circuit design trade-offs driven
by primary-side device Cp, and
secondary-side device Ron

[1] D. Costinett, H. Nguyen, R. Zane, D. Maksimovic, GaN-FET based dual active bridge DC-DC converter, IEEE APEC 2011.
[2] D. Costinett, R. Zane, D. Maksimovic, "Automatic voltage and dead time control for efficiency optimization in a dual active bridge
converter," IEEE APEC 2012.
ECEN 5817
4

Effects of primary-side device capacitance

05
0.5

Ll

+
vp

il

Vg

1:nt

Il [A]

il
+
vs

Pout
-0.5

18

Ig,rms
ntiout,rms
Ll

1.3

14

-400

1.25

12

1.2

10

1.15

1.1

1.05

100

200

300

400

Ll [H]

RMS ccurrents [A]

-200

0.2

0.3

0.4

0.5
0.6
time [sec]

0.7

0.8

0.9

Cp = 70 pF
Cp = 40 pF
Cp = 20 pF

16

0.1

200
Vp [V]

1.4

400

400 t 12 V,
400-to-12
V 100 W

1.35

vp
0

0.1

0.2

0.3

0.4

0.5
0.6
time [sec]

0.7

0.8

0.9

Primary ZVS minimizes primary-side

switching losses
A larger device Cp requires larger Ll,
and longer transition times, which
results in larger peak and RMS
currents, i.e. larger conduction loss on
both primary and secondary sides

2
500

Cp [pF]
5

ECEN 5817

Device comparison for DAB application

CossR
Ron [pF]

Si vs. GaN Transistors, 20-40V

CossR
Ron [pF]

Si vs. GaN Transistors, 200V

QgRon [pC]

QgRon [nC]

Data-sheet based comparison of Si and GaN (EPC 2011) devices

D t h t Coss att 100V or 20V,
Datasheet
20V and
d Qg att rated
t d voltage
lt
VGS
DAB circuit design trade-offs decided by primary-side CossRon, and
y
device QgRon
secondary-side

ECEN 5817

Device Loss Comparison: 150-12 V DAB

Secondary Gate Drive Loss
Primary Gate Drive Loss
S
Secondary
Conduction
C
Loss

Power Loss [W
W]

Primary Conduction Loss

ECEN 5817

Efficiency optimization via control

100
W

150-to-(10-12) V conversion
0.98
0.97

il
vgs6

0.96

vgs2

vgs4

0.94
0.93

80W
W

Effic
ciency

0.95

0.92
0.91

Manual Optimization
Constant Vout

0.9

Automatic Vout Regulation

g

0.89
20

30

40

50

60
70
80
Output Power [W]

90

100

110

120

20W
W

0.88

Vout/Vg conversion ratio controlled to

maximize efficiency over wider power
range
8

ECEN 5817

Dual active bridge DC-DC converter summary

At V/nVg = 1 (DCX), waveforms are close to ideal if F << 1
ZVS of all semiconductors for loads greater than a minimum
ZVS can be extended to lighter loads by adjusting conversion ratio
Phase shift can be used to control the conversion ratio (non-DCX operation)
High step-down, or high step-up conversion ratios feasible at high efficiencies (well
above 90%).
Bidirectional power flow is possible
For standard unidirectional applications, the secondary-side bridge can be just diodes
(operation is similar, but not the same)
Half-bridge and push-pull variations are available
Some DAB issues:
Transformer saturation (may require a series blocking capacitor)
Switching frequency trade-offs (F << 1; transformer and inductor core and proximity losses)

Significant new developments in Power Electronics based on emerging compound

semiconductor (elements from 2 or more groups of the periodic table) devices (e.g.
GaN, GaAs, SiC)
9

ECEN 5817

Application example:
Automotive battery power management in a fuel-cell vehicle*

*F. Krismer, J.W.Kolar, Accurate Power Loss Model Derivation of a High-Current Dual Active Bridge
Converter for an Automotive Application, IEEE Trans. On Industrial Electronics, March 2010
10

ECEN 5817

Efficiency results

11

ECEN 5817

Power flow control in 3-phase AC power distribution*

Purpose: control active and reactive power flow; increasingly important

function in AC power distribution systems with distributed resources
Solution above requires bulky 50/60 Hz transformers, e.g. for a 6.6 kV, 1
MVA unit, each transformer weights around 4,000 kg

* A. Inoue, H. Akagi, A Bidirectional Isolated DCDC Converter as a Core Circuit of the NextGeneration Medium-Voltage Power Conversion System, IEEE Trans. on Power Elect., March 2007

12

ECEN 5817

Solution based on modular DCX

Each cell can be switched as +E, -E, or 0

With N = 9 cells, a total 19 levels are
available to synthesize high-quality sine-wave

13

ECEN 5817

Converter realization

14

ECEN 5817

Spring 2013: ECEN 5807

Modeling and Control of Power Electronics
Averaged switch modeling and simulation (Section 7.4 and Appendix B)
q
of Design-Oriented
g
Analysis,
y , with Application
pp
to Switching
g
Techniques
Converters
Middlebrook's Extra Element Theorem (Appendix C)
Input
p Filter Design
g ((Chapter
p 10))
The n-Extra Element Theorem
Middlebrook's Feedback Theorem
Dynamic modeling and simulation of converters operating in
discontinuous conduction mode (Chapter 11 and Appendix B)
Introduction to sampled-data modeling
Current Programmed Control (Chapter 12 and Appendix B)
Introduction to Digital Control of Switching Converters
Power-Factor Correction Rectifiers (Chapters 16-18)

15

ECEN 5817

Professional Certificate in Power Electronics

Awarded upon completion of ECEN5797, ECEN5807 and ECEN5817
Send a request to Adam Sadoff, ECEE graduate program administrator
sadoff@schof.colorado.ed

16

ECEN 5817

New courses offered in Fall 2012 and Spring 2013

ECEN5017 Power Electronics for Electric Drive Vehicles

Fall 2012

17

ECEN 5817

New courses offered in Fall 2012 and Spring 2013

ECEN5737 Adjustable Speed AC Drives

Spring 2013

18

ECEN 5817

NewDOEGATECenter:InnovativeDrivetrainsin
ElectricAutomotiveTechnologyEducation(IDEATE)
http://mocha-java.uccs.edu/ideate/
Joint center between CU-Boulder and UC Colorado Springs campuses
Graduate certificate in battery controls and electric drivetrains

19

ECEN 5817 19

Th k you for
Thank
f your hard
h d work,
k good
d luck
l k with
i h the
h finals
fi l

20

ECEN 5817